SLD6162RLI

SLD6162RLI Two-wavelength Laser Diode Description The SLD6162RLI is a two-wavelength laser diode designed for DVD, CD and CD-R/RW playback. Features • Two wavelength 650nm/780nm • Without high-frequency superposing circuit Applications DVD, CD and CD-R/RW playback Recommended Optical Power Output 4mW (DVD), 4mW (CD) M-S011 Absolute Maximum Ratings (Tc = 25°C) • Optical power output Pomax (DVD) 5 (CD) 7 LD 2 • Reverse voltage VR PD 20 • Operating temperature Topr –10 to +70 • Storage temperature Tstg –40 to +85 mW mW V V °C °C Connection Diagram Common Pin Configuration 4 CD LD 3 PD 2 2 DVD LD 1 3 1 4 1. DVD LD anode 2. PD anode 3. CD LD anode 4. Common Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convery any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E01424-PS SLD6162RLI (DVD) Electrical and Optical Characteristics (Tc = 25°C) Item Threshold current Operating current Maximum operating current Operating voltage Wavelength Differential efficiency Radiation angle Astigmatism Positional accuracy Monitor current Angle Position Paralell Perpendicular Ith Iop Iop MAX Vop λp ηD θ// θ⊥ As ∆φ// ∆φ⊥ ∆X, ∆Y, ∆Z Imon Po = 4mW, VR = 5V Po = 4mW Po = 4mW Po = 5mW, Tc = 70°C Po = 4mW Po = 4mW Po = 4mW Po = 4mW Po = 4mW Symbol Conditions Min. — — — — 645 — 7 31 — — — — 0.1 Tc: Case temperature Typ. 45 50 — 2.2 655 0.6 8.5 35 0 — — — 0.2 Max. 55 65 100 2.6 660 0.9 11 42 — ±1.5 ±3 ±80 0.5 Unit mA mA mA V nm mW/mA degree degree µm degree degree µm mA (CD) Electrical and Optical Characteristics (Tc = 25°C) Item Threshold current Operating current Maximum operating current Operating voltage Wavelength Differential efficiency Radiation angle Astigmatism Positional accuracy Monitor current Positional spacing: 110 ± 3µm Angle Position Paralell Perpendicular Ith Iop Iop MAX Vop λp ηD θ// θ⊥ As ∆φ// ∆φ⊥ ∆X, ∆Y, ∆Z Imon Po = 4mW, VR = 5V Po = 4mW Po = 4mW Po = 7mW, Tc = 70°C Po = 4mW Po = 4mW Po = 4mW Po = 4mW Po = 4mW Symbol Conditions Min. — — — — 770 — 10 34 — — — — 0.12 Tc: Case temperature Typ. 55 65 — 1.9 790 0.4 15 37 15 — — — 0.3 Max. 70 75 110 2.5 800 0.7 21 40 — ±2 ±3 ±80 0.6 Unit mA mA mA V nm mW/mA degree degree µm degree degree µm mA –2– SLD6162RLI Notes on Operation Care should be taken for the following points when using this product. (1) This product corresponds to a Class 3B product under IEC60825-1 and JIS standard C6802 "Laser Product Emission Safety Standards". LASER DIODE LASER DIODE This product complies with 21 CFR Part 1040.10 and 1040.11 Sony Corporation LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM MAXIMUM OUTPUT WAVELENGTH 30 mW 600 - 950 nm CLASS III b LASER PRODUCT AVOID EXPOSURE Laser radiation is emitted from this aperture. 6-7-35 Kitashinagawa, Shinagawa-ku,Tokyo 141-0001 Japan (2) Eye protection against laser beams Take care not to allow laser beams to enter your eyes under any circumstances. For observing laser beams, ALWAYS use safety goggles that block laser beams. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. (3) Gallium Arsenide This product uses gallium arsenide (GaAs). This is not a problem for normal use, but GaAs vapors may be potentially hazardous to the human body. Therefore, never crush, heat to the maximum storage temperature or higher, or place the product in your mouth. In addition, the following disposal methods are recommended when disposing of this product. 1. Engaging the services of a contractor certified in the collection, transport and intermediate treatment of items containing arsenic. 2. Managing the product through to final disposal as specially managed industrial waste which is handled separately from general industrial waste and household waste. (4) Prevention of surge current and electrostatic discharge Laser diodes are most sensitive to electrostatic discharge among semiconductors. When a large current is passed through the laser diode for even an extremely short time, the strong light emitted from the laser diode promotes deterioration and then destruction of the laser diode. Therefore, note that surge current should not flow to the laser diode driving circuit from switches and others. Also, if the laser diode is handled carelessly, it may be destroyed instantly because electrostatic discharge is easily applied by a human body. Therefore, be extremely careful about overcurrent and electrostatic discharge. (5) Use for special applications This product is not designed or manufactured for use in equipment used under circumstances where failure may pose a risk to life and limb, or result in significant material damage, etc. Consult your Sony sales representative when investigating use for medical, vehicle, nuclear power control or other special applications. Also, use the power supply that was designed not to exceed the optical power output specified at the absolute maximum ratings. –3– SLD6162RLI Package Outline Unit: mm M-S011 Reference Slot 1 ± 0.07 0.5 4 90˚ +0 2.2 –0.1 3 2 1 CD 0.11 0 φ5.6 –0.03 +0.2 φ4 –0.1 φ3.45 ± 0.1 DVD 0.6 MIN Window Glass φ0.6 22.5˚ 2.6 MAX 1.1 0.2 5 0.5 Reference Plane 1.2 ± 0.1 LD Chip & Photo Diode 321 4 4 – φ0.45 PCD φ2 SONY CODE EIAJ CODE JEDEC CODE M-S011 6.5 4.8 MAX PACKAGE MASS 0.3g –4– Sony Corporation