AM50DL128CH_04

Am50DL128CH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary. Continuity of Ordering Part Numbers AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order these products, please use only the Ordering Part Numbers listed in this document. For More Information Please contact your local AMD or Fujitsu sales office for additional information about Spansion memory solutions. Publication Number 30776 Revision A Amendment +3 Issue Date February 6, 2004 THIS PAGE LEFT INTENTIONALLY BLANK. ADVANCE INFORMATION Am50DL128CH Stacked Multi-Chip Package (MCP) Flash Memory and SRAM Two Am29DL640G 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 64 Mbit (4 M x 16-Bit) Pseudo Static RAM with Page Mode DISTINCTIVE CHARACTERISTICS MCP Features ■ Power supply voltage of 2.7 to 3.3 volt ■ High performance — Access time as fast as 55 ns ■ 20 year data retention at 125°C — Reliable operation for the life of the system SOFTWARE FEATURES ■ Data Management Software (DMS) — AMD-supplied software manages data programming, enabling EEPROM emulation — Eases historical sector erase flash limitations ■ Package — 88-Ball FBGA ■ Operating Temperature — –40°C to +85°C ■ Supports Common Flash Memory Interface (CFI) ■ Program/Erase Suspend/Erase Resume — Suspends program/erase operations to allow programming/erasing in same bank Flash Memory Features ARCHITECTURAL ADVANTAGES ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank. — Zero latency between read and write operations ■ Data# Polling and Toggle Bits — Provides a software method of detecting the status of program or erase cycles ■ Unlock Bypass Program command — Reduces overall programming time when issuing multiple program command sequences ■ Flexible Bank™ architecture — Read may occur in any of the three banks not being written or erased. — Four banks may be grouped by customer to achieve desired bank divisions. HARDWARE FEATURES ■ Any combination of sectors can be erased ■ Ready/Busy# output (RY/BY#) — Hardware method for detecting program or erase cycle completion ■ Manufactured on 0.13 µm process technology ■ SecSi™ (Secured Silicon) Sector: Extra 256 Byte sector — Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function. ExpressFlash option allows entire sector to be available for factory-secured data — Customer lockable: Sector is one-time programmable. Once sector is locked, data cannot be changed. ■ Hardware reset pin (RESET#) — Hardware method of resetting the internal state machine to the read mode ■ WP#/ACC input pin — Write protect (WP#) function protects sectors 0, 1, 140, and 141, regardless of sector protect status — Acceleration (ACC) function accelerates program timing ■ Zero Power Operation — Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero. ■ Sector protection — Hardware method of locking a sector, either in-system or using programming equipment, to prevent any program or erase operation within that sector — Temporary Sector Unprotect allows changing data in protected sectors in-system ■ Boot sectors — Top and bottom boot sectors in the same device ■ Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash standard pSRAM Features ■ Power dissipation — Operating: 50 mA maximum — Standby: 100 µA maximum — Deep power-down standby: 5 µA PERFORMANCE CHARACTERISTICS ■ High performance — Access time as fast as 55 ns — Program time: 4 µs/word typical utilizing Accelerate function ■ Ultra low power consumption (typical values) — 2 mA active read current at 1 MHz — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode ■ CE1s# and CE2s Chip Select ■ Power down features using CE1s# and CE2s ■ Data retention supply voltage: 2.7 to 3.3 volt ■ Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8) ■ 8-word page mode access ■ Minimum 1 million write cycles guaranteed per sector This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product without notice. Publication# 30776 Rev: A Amendment/+3 Issue Date: February 6, 2004 Refer to AMD’s Website (www.amd.com) for the latest information. ADVANCE INFORMATION GENERAL DESCRIPTION Am29DL640H Features The Am29DL640H is a 64 megabit, 3.0 volt-only flash memory device, organized as 4,194,304 words of 16 bits each. Word mode data appears on DQ15–DQ0. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers. The device is available with an access time of 55, 70 or 85 ns and is offered in a 88-ball FBGA package. Standard control pins—chip enable (CE#f), write enable (WE#), and output enable (OE#)—control normal read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. grammed through AMD’s ExpressFlash service), or both. Customer Lockable parts may utilize the SecSi Sector as bonus space, reading and writing like any other flash sector, or may permanently lock their own code there. DMS (Data Management Software) allows systems to easily take advantage of the advanced architecture of the simultaneous read/write product line by allowing removal of EEPROM devices. DMS will also allow the system software to be simplified, as it will perform all functions necessary to modify data in file structures, as opposed to single-byte modifications. To write or update a particular piece of data (a phone number or configuration data, for example), the user only needs to state which piece of data is to be updated, and where the updated data is located in the system. This i s a n a d va n t a g e c o m p a r e d t o s ys te m s w h e r e user-written software must keep track of the old data location, status, logical to physical translation of the data onto the Flash memory device (or memory devices), and more. Using DMS, user-written software does not need to interface with the Flash memory directly. Instead, the user's software accesses the Flash memory by calling one of only six functions. AMD provides this software to simplify system design and software integration efforts. The device offers complete compatibility with the JEDEC single-power-supply Flash command set standard . Commands are written to the command register using standard microprocessor write timings. Reading data out of the device is similar to reading from other Flash or EPROM devices. The host system can detect whether a program or erase operation is complete by using the device status bits: RY/BY# pin, DQ7 (Data# Polling) and DQ6/DQ2 (toggle bits). After a program or erase cycle has been completed, the device automatically returns to the read mode. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection m easures include a low V CC d etector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode . Power consumption is greatly reduced in both modes. Simultaneous Read/Write Operations with Zero Latency The Simultaneous Read/Write architecture provides simultaneous operation b y dividing the memory space into four banks, two 8 Mb banks with small and large sectors, and two 24 Mb banks of large sectors only. Sector addresses are fixed, system software can be used to form user-defined bank groups. During an Erase/Program operation, any of the three non-busy banks may be read from. Note that only two banks can operate simultaneously. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from the other bank, with zero latency. This releases the system from waiting for the completion of program or erase operations. The Am29DL640H can be organized as both a top and bottom boot sector configuration. Bank Bank 1 Bank 2 Bank 3 Bank 4 Megabits 8 Mb 24 Mb 24 Mb 8 Mb Sector Sizes Eight 4 Kword, Fifteen 32 Kword Forty-eight 32 Kword Forty-eight 32 Kword Eight 4 Kword, Fifteen 32 Kword The S ecSi™ (Secured Silicon) Sector i s an extra 256 byte sector capable of being permanently locked by AMD or customers. The SecSi Indicator Bit (DQ7) is permanently set to a 1 if the part is factory locked, and set to a 0 if c ustomer lockable. This way, customer lockable parts can never be used to replace a factory locked part. Factory locked parts provide several options. The SecSi Sector m ay store a secure, random 16 byte ESN (Electronic Serial Number), customer code (pro- 2 Am50DL128CH February 6, 2004 ADVANCE INFORMATION TABLE OF CONTENTS Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5 MCP Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . 5 Flash Memory Block Diagram . . . . . . . . . . . . . . . . 6 Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . 7 Special Package Handling Instructions .................................... 7 Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9 MCP Device Bus Operations . . . . . . . . . . . . . . . . 10 Table 1. Device Bus Operations—Flash Word Mode .....................11 Erase Suspend/Erase Resume Commands ........................... 29 Table 11. Am29DL640H Command Definitions ..............................30 Flash Write Operation Status . . . . . . . . . . . . . . . 31 DQ7: Data# Polling ................................................................. 31 Figure 6. Data# Polling Algorithm .................................................. 31 RY/BY#: Ready/Busy# ............................................................ 32 DQ6: Toggle Bit I .................................................................... 32 Figure 7. Toggle Bit Algorithm ........................................................ 32 Flash Device Bus Operations . . . . . . . . . . . . . . . 12 Word Configuration ................................................................. 12 Requirements for Reading Array Data ................................... 12 Writing Commands/Command Sequences ............................ 12 Accelerated Program Operation .......................................... 12 Autoselect Functions ........................................................... 12 Simultaneous Read/Write Operations with Zero Latency ....... 12 Standby Mode ........................................................................ 12 Automatic Sleep Mode ........................................................... 13 RESET#: Hardware Reset Pin ............................................... 13 Output Disable Mode .............................................................. 13 Table 2. Am29DL640H Sector Architecture ....................................14 Table 3. Bank Address ....................................................................17 Table 4. SecSi™ Sector Addresses ...............................................17 DQ2: Toggle Bit II ................................................................... 33 Reading Toggle Bits DQ6/DQ2 ............................................... 33 DQ5: Exceeded Timing Limits ................................................ 33 DQ3: Sector Erase Timer ....................................................... 33 Table 12. Write Operation Status ................................................... 34 Absolute Maximum Ratings . . . . . . . . . . . . . . . . 35 Figure 8. Maximum Negative Overshoot Waveform ...................... 35 Figure 9. Maximum Positive Overshoot Waveform ........................ 35 ESD Immunity . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 ESD Immunity ......................................................................... 36 Flash DC Characteristics . . . . . . . . . . . . . . . . . . 37 CMOS Compatible .................................................................. 37 pSRAM DC & Operating Characteristics . . . . . . 38 Flash DC Characteristics . . . . . . . . . . . . . . . . . . 39 Figure 10. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) ............................................................. 39 Figure 11. Typical ICC1 vs. Frequency ............................................ 39 Sector/Sector Block Protection and Unprotection .................. 18 Table 5. Am29DL640H Boot Sector/Sector Block Addresses for Protection/Unprotection ........................................................................18 Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Figure 12. Test Setup .................................................................... 40 Figure 13. Input Waveforms and Measurement Levels ................. 40 Write Protect (WP#) ................................................................ 18 Table 6. WP#/ACC Modes ..............................................................19 Temporary Sector Unprotect .................................................. 19 Figure 1. Temporary Sector Unprotect Operation ...........................19 Figure 2. In-System Sector Protect/Unprotect Algorithms ..............20 pSRAM AC Characteristics . . . . . . . . . . . . . . . . . 41 CE#s Timing ........................................................................... 41 Figure 14. Timing Diagram for Alternating Between Pseudo SRAM to Flash ................................................... 41 SecSi™ (Secured Silicon) Sector Flash Memory Region ............................................................ 21 Figure 3. SecSi Sector Protect Verify ..............................................22 Read-Only Operations ........................................................... 42 Figure 15. Read Operation Timings ............................................... 42 Hardware Reset (RESET#) .................................................... 43 Figure 16. Reset Timings ............................................................... 43 Hardware Data Protection ...................................................... 22 Low VCC Write Inhibit ........................................................... 22 Write Pulse “Glitch” Protection ............................................ 22 Logical Inhibit ...................................................................... 22 Power-Up Write Inhibit ......................................................... 22 Common Flash Memory Interface (CFI) . . . . . . . 22 Table 7. CFI Query Identification String ..........................................23 Table 8. System Interface String .....................................................23 Table 9. Device Geometry Definition ..............................................24 Table 10. Primary Vendor-Specific Extended Query ......................25 Erase and Program Operations .............................................. 44 Figure 17. Program Operation Timings .......................................... 45 Figure 18. Accelerated Program Timing Diagram .......................... 45 Figure 19. Chip/Sector Erase Operation Timings .......................... 46 Figure 20. Back-to-back Read/Write Cycle Timings ...................... 47 Figure 21. Data# Polling Timings (During Embedded Algorithms) . 47 Figure 22. Toggle Bit Timings (During Embedded Algorithms) ...... 48 Figure 23. DQ2 vs. DQ6 ................................................................. 48 Temporary Sector Unprotect .................................................. 49 Figure 24. Temporary Sector Unprotect Timing Diagram .............. 49 Figure 25. Sector/Sector Block Protect and Unprotect Timing Diagram ............................................................. 50 Flash Command Definitions . . . . . . . . . . . . . . . . 26 Reading Array Data ................................................................ 26 Reset Command ..................................................................... 26 Autoselect Command Sequence ............................................ 26 Enter SecSi™ Sector/Exit SecSi Sector Command Sequence .............................................................. 26 Word Program Command Sequence ..................................... 27 Unlock Bypass Command Sequence .................................. 27 Figure 4. Program Operation ..........................................................28 Alternate CE#f Controlled Erase and Program Operations .... 51 Figure 26. Flash Alternate CE#f Controlled Write (Erase/Program) Operation Timings .......................................................................... 52 Read Cycle ............................................................................. 53 Figure 27. Pseudo SRAM Read Cycle ........................................... 53 Figure 28. Page Read Timing ........................................................ 54 Write Cycle ............................................................................. 55 Figure 29. Pseudo SRAM Write Cycle—WE# Control ................... 55 Figure 30. Pseudo SRAM Write Cycle—CE#1ps Control .............. 56 Figure 31. Pseudo SRAM Write Cycle— UB#s and LB#s Control .................................................................. 57 Chip Erase Command Sequence ........................................... 28 Sector Erase Command Sequence ........................................ 28 Figure 5. Erase Operation ...............................................................29 February 6, 2004 Am50DL128CH 3 ADVANCE INFORMATION pSRAM Address Skew . . . . . . . . . . . . . . . . . . . . . 60 Figure 34. Read Address Skew ..................................................... 60 Figure 35. Write Address Skew ...................................................... 60 Flash Erase And Programming Performance . . . 58 Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 58 Package Pin Capacitance . . . . . . . . . . . . . . . . . . . 58 Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . 58 pSRAM Data Retention . . . . . . . . . . . . . . . . . . . . . 59 pSRAM Power on and Deep Power Down . . . . . 59 Figure 32. Deep Power-down Timing ..............................................59 Figure 33. Power-on Timing ............................................................59 Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 61 FTA088—88-Ball Fine-Pitch Grid Array 11.6 x 8 mm ............. 61 Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 62 4 Am50DL128CH February 6, 2004 ADVANCE INFORMATION PRODUCT SELECTOR GUIDE Part Number Standard Voltage Speed Range: VCC = Options 2.7–3.3 V Max Access Time, ns Page Access Time (pSRAM), ns CE#f Access, ns OE# Access, ns Flash Memory 56 55 N/A 55 25 70 70 N/A 70 30 85 85 N/A 85 40 56 70 30 70 25 Am50DL128CH Pseudo SRAM 70 70 30 70 25 85 85 35 85 30 MCP BLOCK DIAGRAM VCCf A21 to A0 VSS RY/BY#1 RESET#1 CE#f1 64 MBit Flash Memory #1 DQ15 to DQ0 VCCf VSSf A21 to A0 WP#/ACC RESET#2 CE#f2 RY/BY#2 64 MBit Flash Memory #2 DQ15 to DQ0 VCCs VSS A21 to A0 LB# UB# WE# OE# CE1#ps CE2ps 64 MBit Static RAM DQ15 to DQ0 February 6, 2004 Am50DL128CH 5 ADVANCE INFORMATION FLASH MEMORY BLOCK DIAGRAM VCC VSS OE# BYTE# Mux A21–A0 Bank 1 Address Bank 1 Y-gate X-Decoder A21–A0 RY/BY# Bank 2 Address Bank 2 X-Decoder DQ15–DQ0 A21–A0 RESET# WE# CE# BYTE# WP#/ACC DQ15–DQ0 A0–A21 X-Decoder Bank 3 Address STATE CONTROL & COMMAND REGISTER Status DQ15–DQ0 Control DQ15–DQ0 Mux Bank 3 Y-gate X-Decoder A21–A0 Mux Bank 4 Address Bank 4 6 Am50DL128CH DQ15–DQ0 DQ15–DQ0 February 6, 2004 ADVANCE INFORMATION CONNECTION DIAGRAM 88-Ball FBGA Top View A1 NC A2 NC B2 NC C2 NC D2 A3 E2 A2 F2 A1 G2 A0 H2 CE#f1 J2 CE#1fps K2 NC L2 NC B3 VSS C3 A7 D3 A6 E3 A5 F3 A4 G3 VSS H3 OE# J3 DQ0 K3 DQ8 L3 RESET#2 B4 RY/BY#2 C4 LB# D4 UB# E4 A18 F4 A17 G4 DQ1 H4 DQ9 J4 DQ10 K4 DQ2 L4 VSS B5 CE#f2 C5 WP#/ACC D5 B6 NC C6 WE# D6 B7 NC C7 A8 D7 A19 E7 A9 F7 A10 G7 DQ6 H7 DQ13 J7 DQ12 K7 DQ5 L7 NC B8 NC C8 A11 D8 A12 E8 A13 F8 A14 G8 NC H8 DQ15 J8 DQ7 K8 DQ14 L8 NC A9 NC B9 NC C9 NC D9 A15 E9 A21 F9 NC G9 A16 H9 VCCf J9 VSS K9 NC L9 NC M9 NC A10 Shared Flash 1 only Flash 2 only Flash 1 and 2 shared SRAM only NC RESET#1 CE2ps E5 RY/BY#1 F5 NC G5 NC H5 DQ3 J5 VCCf K5 DQ11 L5 VCCf E6 A20 F6 NC G6 NC H6 DQ4 J6 VCCps K6 NC L6 NC M1 NC M2 NC M10 NC Special Package Handling Instructions Special handling is required for Flash Memory products in molded packages (TSOP, BGA, PLCC, PDIP, SSOP). The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. February 6, 2004 Am50DL128CH 7 ADVANCE INFORMATION PIN DESCRIPTION A21–A0 DQ15–DQ0 CE#f1 CE#f2 CE1#ps CE2ps OE# WE# RY/BY#1 RY/BY#2 UB# LB# RESET#1 RESET#2 WP#/ACC VCCf = 22 Address Inputs (Common) = 16 Data Inputs/Outputs (Common) = Chip Enable 1 (Flash 1) = Chip Enable 2 (Flash 2) = Chip Enable 1 (pSRAM) = Chip Enable 2 (pSRAM) = Output Enable (Common) = Write Enable (Common) = Ready/Busy Output (Flash 1) = Ready/Busy Output (Flash 2) = Upper Byte Control (pSRAM) = Lower Byte Control (pSRAM) = Hardware Reset Pin, Active Low (Flash 1) = Hardware Reset Pin, Active Low (Flash 2) = Hardware Write Protect/ Acceleration Pin (Flash) = Flash 3.0 volt-only single power supply (see Product Selector Guide for speed options and voltage supply tolerances) = pSRAM Power Supply = Device Ground (Common) = Pin Not Connected Internally LOGIC SYMBOL 22 A21–A0 CE#f1 CE#f2 CE1#ps CE2ps OE# WE# WP#/ACC RESET#1 RESET#2 UB# LB# RY/BY#1 RY/BY#2 DQ15–DQ0 16 VCCps VSS NC 8 Am50DL128CH February 6, 2004 ADVANCE INFORMATION ORDERING INFORMATION The order number (Valid Combination) is formed by the following: Am50DL128 C H 70 I T TAPE AND REEL T = 7 inches S = 13 inches TEMPERATURE RANGE I = Industrial (–40°C to +85°C) SPEED OPTION See “Product Selector Guide” on page 5 FLASH PROCESS TECHNOLOGY H = 0.13 µm PSEUDO SRAM DEVICE DENSITY C = 64 Mbits AMD DEVICE NUMBER/DESCRIPTION Am50DL128CH Stacked Multi-Chip Package (MCP) Flash Memory and SRAM Two Am29DL640H 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 64 Mbit (4 M x 16-Bit) Pseudo Static RAM with Page Mode 88-Ball Fine Pitch Ball Grid Array, 11.6 x 8, 0.80 mm pitch package (FTA088) Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD or Fujitsu sales office to confirm availability of specific valid combinations and to check on newly released combinations. Valid Combinations Order Number Am50DL128CH56I Am50DL128CH70I Am50DL128CH85I T,S Package Marking M50000004M M50000004N M50000004P February 6, 2004 Am50DL128CH 9 ADVANCE INFORMATION needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Tables 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. MCP DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information 10 Am50DL128CH February 6, 2004 ADVANCE Table 1. Operation (Notes 1, 2) Read from Active Flash Write to Active Flash Standby Deep Power-down Standby Output Disable (Note 10) Flash Hardware (Note 8) Reset (Note 9) (Note 8) Sector Protect (Notes 6, 10) (Note 9) (Note 8) (Note 9) (Note 8) (Note 9) X L H L H (Note 8) (Note 9) (Note 8) (Note 9) INFORMATION Device Bus Operations—Flash Word Mode Addr. LB#s UB#s RESET# WP#/ ACC (Note 5) L/H CE#f CE#f Active Inactive CE1#ps CE2ps OE# WE# (Note 3) L H H H H H H H L H H H H H H H H H L H L H L H H L H L H L H L X X H L H L L H DQ7– DQ0 DQ15– DQ8 AIN AIN X X X X X SADD, A6 = L, A1 = H, A0 = L SADD, A6 = H, A1 = H, A0 = L X X X H DOUT DIN High-Z High-Z High-Z DOUT DIN High-Z High-Z High-Z L H H X X H H X L X X H H X X X X X X X X X X X X X H VCC ± 0.3 V VCC ± 0.3 V H (Note 5) H H L/H VCC ± 0.3 V VCC ± 0.3 V L H X L L/H High-Z High-Z X X VID L/H DIN X Sector Unprotect (Notes 6, 10) Temporary Sector Unprotect X X VID (Note 7) DIN X X L X L L H L L H VID (Note 7) DIN DOUT High-Z DOUT DOUT High-Z DIN DIN High-Z Read from pSRAM H H L H L H AIN H L L H X High-Z DOUT DIN Write to pSRAM H H L H X L AIN H L H X High-Z DIN Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, SADD = Flash Sector Address, AIN = Address In, DIN = Data In, DOUT = Data Out Notes: 1. Other operations except for those indicated in this column are inhibited. 2. Do not apply CE#f1 or 2 = VIL, CE1#s = VIL and CE2s = VIH at the same time. 3. Active flash is device being addressed. 4. Don’t care or open LB#s or UB#s. 5. If WP#/ACC = VIL , the boot sectors will be protected. If WP#/ACC = VIH the boot sectors protection will be removed. If WP#/ACC = VACC (9V), the program time will be reduced by 40%. 6. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector Block Protection and Unprotection” section. 7. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, the two outermost boot sector protection depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”. If WP#/ACC = VHH, all sectors will be unprotected. 8. Data will be retained in pSRAM. 9. Data will be lost in pSRAM. 10. CE# inputs on both flash devices may be held low for this operation. February 6, 2004 Am50DL128CH 11 ADVANCE INFORMATION AC Characteristics section contains timing specification tables and timing diagrams for write operations. Accelerated Program Operation The device offers accelerated program operations through the ACC function. This is one of two functions provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput at the factory. If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. The system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing VHH from the WP#/ACC pin returns the device to normal operation. Note that VHH must not be asserted on WP#/ACC for operations other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. See “Write Protect (WP#)” on page 18 for related information. Autoselect Functions If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ15–DQ0. Standard read cycle timings apply in this mode. Refer to the Sector/Sector Block Protection and Unprotection and Autoselect Command Sequence sections for more information. FLASH DEVICE BUS OPERATIONS Word Configuration The device is in word configuration, DQ15–DQ0 are active and controlled by CE#f and OE#. Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE#f and OE# pins to VIL. CE#f is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. Each bank remains enabled for read access until the command register contents are altered. Refer to the Flash Read-Only Operations table for timing specifications and to Figure 15 for the timing diagram. ICC1 in the DC Characteristics table represents the active current specification for reading array data. Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE#f to VIL, and OE# to VIH. For program operations, the CIOf pin determines whether the device accepts program data in bytes or words. Refer to “Flash Device Bus Operations” for more information. The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. An erase operation can erase one sector, multiple sectors, or the entire device. Table 2 indicates the address space that each sector occupies. Similarly, a “sector address” is the address bits required to uniquely select a sector. The “Flash Command Definitions” section has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. The device address space is divided into four banks. A “bank address” is the address bits required to uniquely select a bank. ICC2 in the DC Characteristics table represents the active current specification for the write mode. The Flash Simultaneous Read/Write Operations with Zero Latency This device is capable of reading data from one bank of memory while programming or erasing in the other bank of memory. An erase operation may also be suspended to read from or program to another location within the same bank (except the sector being erased). Figure 20 shows how read and write cycles may be initiated for simultaneous operation with zero latency. ICC6f and ICC7f in the Zero-Power Flash table represent the current specifications for read-while-program and read-while-erase, respectively. Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE#f and RESET# pins are both held at VCC ± 0.3 V. February 6, 2004 12 Am50DL128CH ADVANCE INFORMATION terrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3 V, the device draws CMOS standby current (I CC4 f). If RESET# is held at VIL but not within VSS±0.3 V, the standby current will be greater. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset operation is completed within a time of tREADY ( not during Embedded Algorithms). The system can read data tRH a fter the RESET# pin returns to VIH. Refer to the pSRAM AC Characteristics tables for RESET# parameters and to Figure 16 for the timing diagram. (Note that this is a more restricted voltage range than V IH .) If CE#f and RESET# are held at V IH , but not within VCC ± 0 .3 V, the device will be in the standby mode, but the standby current will be greater. The device requires standard access time (tCE) for read access when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. I CC3 f in the Zero-Power Flash table represents the standby current specification. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for t ACC + 30 ns. The automatic sleep mode is independent of the CE#f, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. I CC5 f in the Zero-Power Flash table represents the automatic sleep mode current specification. RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was in- Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. February 6, 2004 Am50DL128CH 13 ADVANCE Table 2. Bank Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 Bank 1 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 INFORMATION Am29DL640H Sector Architecture Sector Size (Kbytes/Kwords) 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 (x16) Address Range 00000h–00FFFh 01000h–01FFFh 02000h–02FFFh 03000h–03FFFh 04000h–04FFFh 05000h–05FFFh 06000h–06FFFh 07000h–07FFFh 08000h–0FFFFh 10000h–17FFFh 18000h–1FFFFh 20000h–27FFFh 28000h–2FFFFh 30000h–37FFFh 38000h–3FFFFh 40000h–47FFFh 48000h–4FFFFh 50000h–57FFFh 58000h–5FFFFh 60000h–67FFFh 68000h–6FFFFh 70000h–77FFFh 78000h–7FFFFh Sector Address A21–A12 0000000000 0000000001 0000000010 0000000011 0000000100 0000000101 0000000110 0000000111 0000001xxx 0000010xxx 0000011xxx 0000100xxx 0000101xxx 0000110xxx 0000111xxx 0001000xxx 0001001xxx 0001010xxx 0001011xxx 0001100xxx 0001101xxx 0001101xxx 0001111xxx 14 Am50DL128CH February 6, 2004 ADVANCE Table 2. Bank Sector SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 Bank 2 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 INFORMATION Am29DL640H Sector Architecture (Continued) Sector Address A21–A12 0010000xxx 0010001xxx 0010010xxx 0010011xxx 0010100xxx 0010101xxx 0010110xxx 0010111xxx 0011000xxx 0011001xxx 0011010xxx 0011011xxx 0011000xxx 0011101xxx 0011110xxx 0011111xxx 0100000xxx 0100001xxx 0100010xxx 0101011xxx 0100100xxx 0100101xxx 0100110xxx 0100111xxx 0101000xxx 0101001xxx 0101010xxx 0101011xxx 0101100xxx 0101101xxx 0101110xxx 0101111xxx 0110000xxx 0110001xxx 0110010xxx 0110011xxx 0100100xxx 0110101xxx 0110110xxx 0110111xxx 0111000xxx 0111001xxx 0111010xxx 0111011xxx 0111100xxx 0111101xxx 0111110xxx 0111111xxx Sector Size (Kbytes/Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 (x16) Address Range 80000h–87FFFh 88000h–8FFFFh 90000h–97FFFh 98000h–9FFFFh A0000h–A7FFFh A8000h–AFFFFh B0000h–B7FFFh B8000h–BFFFFh C0000h–C7FFFh C8000h–CFFFFh D0000h–D7FFFh D8000h–DFFFFh E0000h–E7FFFh E8000h–EFFFFh F0000h–F7FFFh F8000h–FFFFFh F9000h–107FFFh 108000h–10FFFFh 110000h–117FFFh 118000h–11FFFFh 120000h–127FFFh 128000h–12FFFFh 130000h–137FFFh 138000h–13FFFFh 140000h–147FFFh 148000h–14FFFFh 150000h–157FFFh 158000h–15FFFFh 160000h–167FFFh 168000h–16FFFFh 170000h–177FFFh 178000h–17FFFFh 180000h–187FFFh 188000h–18FFFFh 190000h–197FFFh 198000h–19FFFFh 1A0000h–1A7FFFh 1A8000h–1AFFFFh 1B0000h–1B7FFFh 1B8000h–1BFFFFh 1C0000h–1C7FFFh 1C8000h–1CFFFFh 1D0000h–1D7FFFh 1D8000h–1DFFFFh 1E0000h–1E7FFFh 1E8000h–1EFFFFh 1F0000h–1F7FFFh 1F8000h–1FFFFFh February 6, 2004 Am50DL128CH 15 ADVANCE Table 2. Bank Sector SA71 SA72 SA73 SA74 SA75 SA76 SA77 SA78 SA79 SA80 SA81 SA82 SA83 SA84 SA85 SA86 SA87 SA88 SA89 SA90 SA91 SA92 SA93 Bank 3 SA94 SA95 SA96 SA97 SA98 SA99 SA100 SA101 SA102 SA103 SA104 SA105 SA106 SA107 SA108 SA109 SA110 SA111 SA112 SA113 SA114 SA115 SA116 SA117 SA118 INFORMATION Am29DL640H Sector Architecture (Continued) Sector Address A21–A12 1000000xxx 1000001xxx 1000010xxx 1000011xxx 1000100xxx 1000101xxx 1000110xxx 1000111xxx 1001000xxx 1001001xxx 1001010xxx 1001011xxx 1001100xxx 1001101xxx 1001110xxx 1001111xxx 1010000xxx 1010001xxx 1010010xxx 1010011xxx 1010100xxx 1010101xxx 1010110xxx 1010111xxx 1011000xxx 1011001xxx 1011010xxx 1011011xxx 1011100xxx 1011101xxx 1011110xxx 1011111xxx 1100000xxx 1100001xxx 1100010xxx 1100011xxx 1100100xxx 1100101xxx 1100110xxx 1100111xxx 1101000xxx 1101001xxx 1101010xxx 1101011xxx 1101100xxx 1101101xxx 1101110xxx 1101111xxx Sector Size (Kbytes/Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 (x16) Address Range 200000h–207FFFh 208000h–20FFFFh 210000h–217FFFh 218000h–21FFFFh 220000h–227FFFh 228000h–22FFFFh 230000h–237FFFh 238000h–23FFFFh 240000h–247FFFh 248000h–24FFFFh 250000h–257FFFh 258000h–25FFFFh 260000h–267FFFh 268000h–26FFFFh 270000h–277FFFh 278000h–27FFFFh 280000h–28FFFFh 288000h–28FFFFh 290000h–297FFFh 298000h–29FFFFh 2A0000h–2A7FFFh 2A8000h–2AFFFFh 2B0000h–2B7FFFh 2B8000h–2BFFFFh 2C0000h–2C7FFFh 2C8000h–2CFFFFh 2D0000h–2D7FFFh 2D8000h–2DFFFFh 2E0000h–2E7FFFh 2E8000h–2EFFFFh 2F0000h–2FFFFFh 2F8000h–2FFFFFh 300000h–307FFFh 308000h–30FFFFh 310000h–317FFFh 318000h–31FFFFh 320000h–327FFFh 328000h–32FFFFh 330000h–337FFFh 338000h–33FFFFh 340000h–347FFFh 348000h–34FFFFh 350000h–357FFFh 358000h–35FFFFh 360000h–367FFFh 368000h–36FFFFh 370000h–377FFFh 378000h–37FFFFh 16 Am50DL128CH February 6, 2004 ADVANCE Table 2. Bank Sector SA119 SA120 SA121 SA122 SA123 SA124 SA125 SA126 SA127 SA128 SA129 Bank 4 SA130 SA131 SA132 SA133 SA134 SA135 SA136 SA137 SA138 SA139 SA140 SA141 INFORMATION Am29DL640H Sector Architecture (Continued) Sector Address A21–A12 1110000xxx 1110001xxx 1110010xxx 1110011xxx 1110100xxx 1110101xxx 1110110xxx 1110111xxx 1111000xxx 1111001xxx 1111010xxx 1111011xxx 1111100xxx 1111101xxx 1111110xxx 1111111000 1111111001 1111111010 1111111011 1111111100 1111111101 1111111110 1111111111 Sector Size (Kbytes/Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 (x16) Address Range 380000h–387FFFh 388000h–38FFFFh 390000h–397FFFh 398000h–39FFFFh 3A0000h–3A7FFFh 3A8000h–3AFFFFh 3B0000h–3B7FFFh 3B8000h–3BFFFFh 3C0000h–3C7FFFh 3C8000h–3CFFFFh 3D0000h–3D7FFFh 3D8000h–3DFFFFh 3E0000h–3E7FFFh 3E8000h–3EFFFFh 3F0000h–3F7FFFh 3F8000h–3F8FFFh 3F9000h–3F9FFFh 3FA000h–3FAFFFh 3FB000h–3FBFFFh 3FC000h–3FCFFFh 3FD000h–3FDFFFh 3FE000h–3FEFFFh 3FF000h–3FFFFFh Note: The address range is A21:A0. Table 3. Bank 1 2 3 4 Bank Address A21–A19 000 001, 010, 011 100, 101, 110 111 Table 4. Device Am29DL640H SecSi™ Sector Addresses Sector Size 256 bytes (x8) Address Range 000000h–0000FFh (x16) Address Range 00000h–0007Fh February 6, 2004 Am50DL128CH 17 ADVANCE INFORMATION Sector/ Sector Block Size 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 192 (3x64) Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes Sector/Sector Block Protection and Unprotection (Note: For the following discussion, the term “sector” applies to both sectors and sector blocks. A sector block consists of two or more adjacent sectors that are protected or unprotected at the same time (see Table 5). The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. Sector protection/unprotection can be implemented via two methods. Table 5. Am29DL640H Boot Sector/Sector Block Addresses for Protection/Unprotection Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8–SA10 SA11–SA14 SA15–SA18 SA19–SA22 SA23–SA26 SA27-SA30 SA31-SA34 SA35-SA38 SA39-SA42 SA43-SA46 SA47-SA50 SA51-SA54 SA55–SA58 SA59–SA62 SA63–SA66 SA67–SA70 SA71–SA74 SA75–SA78 SA79–SA82 SA83–SA86 SA87–SA90 SA91–SA94 A21–A12 0000000000 0000000001 0000000010 0000000011 0000000100 0000000101 0000000110 0000000111 0000001XXX, 0000010XXX, 0000011XXX, 00001XXXXX 00010XXXXX 00011XXXXX 00100XXXXX 00101XXXXX 00110XXXXX 00111XXXXX 01000XXXXX 01001XXXXX 01010XXXXX 01011XXXXX 01100XXXXX 01101XXXXX 01110XXXXX 01111XXXXX 10000XXXXX 10001XXXXX 10010XXXXX 10011XXXXX 10100XXXXX 10101XXXXX Sector/ Sector Block Size 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 192 (3x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes Sector SA95–SA98 SA99–SA102 SA103–SA106 SA107–SA110 SA111–SA114 SA115–SA118 SA119–SA122 SA123–SA126 SA127–SA130 SA131–SA133 SA134 SA135 SA136 SA137 SA138 SA139 SA140 SA141 A21–A12 10110XXXXX 10111XXXXX 11000XXXXX 11001XXXXX 11010XXXXX 11011XXXXX 11100XXXXX 11101XXXXX 11110XXXXX 1111100XXX, 1111101XXX, 1111110XXX 1111111000 1111111001 1111111010 1111111011 1111111100 1111111101 1111111110 1111111111 Sector protection/ unprotection requires V ID o n the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 2 shows the algorithms and Figure 25 shows the timing diagram. For sector unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. Note that the sector unprotect algorithm unprotects all sectors in parallel. All previously protected sectors must be individually re-protected. To change data in protected sectors efficiently, the temporary sector unprotect function is available. See “Temporary Sector Unprotect”. The device is shipped with all sectors unprotected. AMD offers the option of programming and protecting sectors at its factory prior to shipping the device through AMD’s ExpressFlash™ Service. It is possible to determine whether a sector is protected or unprotected. See the Sector/Sector Block Protection and Unprotection section for details. Write Protect (WP#) The Write Protect function provides a hardware method of protecting without using VID. This function is one of two provided by the WP#/ACC pin. If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in sectors 0, 1, 140, and 141, independently of whether those sectors were protected or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”. 18 Am50DL128CH February 6, 2004 ADVANCE INFORMATION If the system asserts VIH on the WP#/ACC pin, the device reverts to whether sectors 0, 1, 140, and 141 were last set to be protected or unprotected. That is, sector protection or unprotection for these sectors depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”. Note that the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. Table 6. WP# Input Voltage Temporary Sector Unprotect (Note: For the following discussion, the term “sector” applies to both sectors and sector blocks. A sector block consists of two or more adjacent sectors that are protected or unprotected at the same time (see Table 5). This feature allows temporary unprotection of previously protected sectors to change data in-system. The Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are protected again. Figure 1 shows the algorithm, and Figure 24 shows the timing diagrams, for this feature. If the WP#/ACC pin is at VIL , sectors 0, 1, 140, and 141 will remain protected during the Temporary sector Unprotect mode. WP#/ACC Modes Device Mode VIL VIH VHH Disables programming and erasing in SA0, SA1, SA140, and SA141 Enables programming and erasing in SA0, SA1, SA140, and SA141 Enables accelerated programming (ACC). See “Accelerated Program Operation” on page 12. START RESET# = VID (Note 1) Perform Erase or Program Operations RESET# = VIH Temporary Sector Unprotect Completed (Note 2) Notes: 1. All protected sectors unprotected (If WP#/ACC = VIL, sectors 0, 1, 140, and 141 will remain protected). 2. All previously protected sectors are protected once again. Figure 1. Temporary Sector Unprotect Operation February 6, 2004 Am50DL128CH 19 ADVANCE INFORMATION START PLSCNT = 1 RESET# = VID Wait 1 µs Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address START PLSCNT = 1 RESET# = VID Wait 1 µs Temporary Sector Unprotect Mode No First Write Cycle = 60h? Yes Set up sector address Sector Protect: Write 60h to sector address with A6 = 0, A1 = 1, A0 = 0 Wait 150 µs Verify Sector Protect: Write 40h to sector address with A6 = 0, A1 = 1, A0 = 0 Read from sector address with A6 = 0, A1 = 1, A0 = 0 No No First Write Cycle = 60h? Yes All sectors protected? Yes Set up first sector address Sector Unprotect: Write 60h to sector address with A6 = 1, A1 = 1, A0 = 0 Temporary Sector Unprotect Mode Increment PLSCNT Reset PLSCNT = 1 Wait 15 ms Verify Sector Unprotect: Write 40h to sector address with A6 = 1, A1 = 1, A0 = 0 No No PLSCNT = 25? Yes Data = 01h? Increment PLSCNT Yes No Yes No Read from sector address with A6 = 1, A1 = 1, A0 = 0 Set up next sector address Device failed Protect another sector? No Remove VID from RESET# PLSCNT = 1000? Yes Data = 00h? Yes Device failed Write reset command Last sector verified? Yes No Sector Protect Algorithm Sector Protect complete Sector Unprotect Algorithm Remove VID from RESET# Write reset command Sector Unprotect complete Figure 2. In-System Sector Protect/Unprotect Algorithms 20 Am50DL128CH February 6, 2004 ADVANCE INFORMATION cure ESN will be programmed in the next 8 words at addresses 000008h–00000Fh. The device is available preprogrammed with one of the following: ■ A random, secure ESN only ■ Customer code through the ExpressFlash service ■ Both a random, secure ESN and customer code through the ExpressFlash service. Customers may opt to have their code programmed by AMD through the AMD ExpressFlash service. AMD programs the customer’s code, with or without the random ESN. The devices are then shipped from AMD’s factory with the SecSi Sector permanently locked. Contact an AMD representative for details on using AMD’s ExpressFlash service. Customer Lockable: SecSi Sector NOT Programmed or Protected At the Factory If the security feature is not required, the SecSi Sector can be treated as an additional Flash memory space. The SecSi Sector can be read any number of times, but can be programmed and locked only once. Note that the accelerated programming (ACC) and unlock bypass functions are not available when programming the SecSi Sector. The SecSi Sector area can be protected using one of the following procedures: ■ Write the three-cycle Enter SecSi Sector Region command sequence, and then follow the in-system sector protect algorithm as shown in Figure 2, except that RESET# may be at either VIH or VID. This allows in-system protection of the SecSi Sector Region without raising any device pin to a high voltage. Note that this method is only applicable to the SecSi Sector. ■ To verify the protect/unprotect status of the SecSi Sector, follow the algorithm shown in Figure 3. Once the SecSi Sector is locked and verified, the system must write the Exit SecSi Sector Region command sequence to return to reading and writing the remainder of the array. The SecSi Sector lock must be used with caution since, once locked, there is no procedure available for unlocking the SecSi Sector area and none of the bits in the SecSi Sector memory space can be modified in any way. SecSi™ (Secured Silicon) Sector Flash Memory Region The SecSi (Secured Silicon) Sector feature provides a Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN). The SecSi Sector is 256 bytes in length, and uses a SecSi Sector Indicator Bit (DQ7) to indicate whether or not the SecSi Sector is locked when shipped from the factory. This bit is permanently set at the factory and cannot be changed, which prevents cloning of a factory locked part. This ensures the security of the ESN once the product is shipped to the field. AMD offers the device with the SecSi Sector either fac t or y l ocke d or c u s t om e r l o ckabl e. T he fac tory-locked version is always protected when shipped from the factory, and has the SecSi (Secured Silicon) Sector Indicator Bit permanently set to a “1.” The customer-lockable version is shipped with the SecSi Sector unprotected, allowing customers to utilize the that sector in any manner they choose. The customer-lockable version has the SecSi (Secured Silicon) Sector Indicator Bit permanently set to a “0.” Thus, the SecSi Sector Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory locked. The system accesses the SecSi Sector Secure through a command sequence (see “Enter SecSi™ Sector/Exit SecSi Sector Command Sequence”). After the system has written the Enter SecSi Sector command sequence, it may read the SecSi Sector by using the addresses normally occupied by the boot sectors. This mode of operation continues until the system issues the Exit SecSi Sector command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device reverts to sending commands to the first 256 bytes of Sector 0. Note that the ACC function and unlock bypass modes are not available when the SecSi Sector is enabled. Factory Locked: SecSi Sector Programmed and Protected At the Factory In a factory locked device, the SecSi Sector is protected when the device is shipped from the factory. The SecSi Sector cannot be modified in any way. The device is preprogrammed with both a random number and a secure ESN. The 8-word random number will at addresses 000000h–000007h in word mode. The se- February 6, 2004 Am50DL128CH 21 ADVANCE . INFORMATION Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE#f = VIH or WE# = VIH. To initiate a write cycle, CE#f and WE# must be a logical zero while OE# is a logical one. START RESET# = VIH or VID Wait 1 µs Write 60h to any address If data = 00h, SecSi Sector is unprotected. If data = 01h, SecSi Sector is protected. Power-Up Write Inhibit If WE# = CE#f = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up. Remove VIH or VID from RESET# Write 40h to SecSi Sector address with A6 = 0, A1 = 1, A0 = 0 Read from SecSi Sector address with A6 = 0, A1 = 1, A0 = 0 COMMON FLASH MEMORY INTERFACE (CFI) The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses given in Tables 7–10. To terminate reading CFI data, the system must write the reset command.The CFI Query mode is not accessible when the device is executing an Embedded Program or embedded Erase algorithm. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Tables 7–10. The system must write the reset command to return the device to reading array data. For further information, please refer to the CFI Specification and CFI Publication 100, available via the World Wide Web at http://www.amd.com/flash/cfi. Alternatively, contact an AMD representative for copies of these documents. Write reset command SecSi Sector Protect Verify complete Figure 3. SecSi Sector Protect Verify Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 11 for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during V CC power-up and power-down transitions, or from system noise. Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to the read mode. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when V CC i s greater than VLKO. Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE#, CE#f or WE# do not initiate a write cycle. 22 Am50DL128CH February 6, 2004 ADVANCE Table 7. Addresses (Word Mode) 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah Data 0051h 0052h 0059h 0002h 0000h 0040h 0000h 0000h 0000h 0000h 0000h INFORMATION CFI Query Identification String Description Query Unique ASCII string “QRY” Primary OEM Command Set Address for Primary Extended Table Alternate OEM Command Set (00h = none exists) Address for Alternate OEM Extended Table (00h = none exists) Table 8. Addresses (Word Mode) 1Bh 1Ch 1Dh 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h Data 0027h 0036h 0000h 0000h 0003h 0000h 0009h 0000h 0005h 0000h 0004h 0000h System Interface String Description VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt VPP Min. voltage (00h = no VPP pin present) VPP Max. voltage (00h = no VPP pin present) Typical timeout per single byte/word write 2N µs Typical timeout for Min. size buffer write 2N µs (00h = not supported) Typical timeout per individual block erase 2N ms Typical timeout for full chip erase 2N ms (00h = not supported) Max. timeout for byte/word write 2N times typical Max. timeout for buffer write 2N times typical Max. timeout per individual block erase 2N times typical Max. timeout for full chip erase 2N times typical (00h = not supported) February 6, 2004 Am50DL128CH 23 ADVANCE Table 9. Addresses (Word Mode) 27h 28h 29h 2Ah 2Bh 2Ch 2Dh 2Eh 2Fh 30h 31h 32h 33h 34h 35h 36h 37h 38h 39h 3Ah 3Bh 3Ch Data 0017h 0002h 0000h 0000h 0000h 0003h 0007h 0000h 0020h 0000h 007Dh 0000h 0000h 0001h 0007h 0000h 0020h 0000h 0000h 0000h 0000h 0000h INFORMATION Device Geometry Definition Description Device Size = 2 byte Flash Device Interface description (refer to CFI publication 100) Max. number of byte in multi-byte write = 2N (00h = not supported) Number of Erase Block Regions within device Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) N Erase Block Region 2 Information (refer to the CFI specification or CFI publication 100) Erase Block Region 3 Information (refer to the CFI specification or CFI publication 100) Erase Block Region 4 Information (refer to the CFI specification or CFI publication 100) 24 Am50DL128CH February 6, 2004 ADVANCE Table 10. Addresses (Word Mode) 40h 41h 42h 43h 44h 45h Data 0050h 0052h 0049h 0031h 0033h 0004h INFORMATION Primary Vendor-Specific Extended Query Description Query-unique ASCII string “PRI” Major version number, ASCII (reflects modifications to the silicon) Minor version number, ASCII (reflects modifications to the CFI table) Address Sensitive Unlock (Bits 1-0) 0 = Required, 1 = Not Required Silicon Revision Number (Bits 7-2) 46h 47h 48h 49h 4Ah 4Bh 4Ch 4Dh 0002h 0001h 0001h 0004h 0077h Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write Sector Protect 0 = Not Supported, X = Number of sectors in per group Sector Temporary Unprotect 00 = Not Supported, 01 = Supported Sector Protect/Unprotect scheme 01 =29F040 mode, 02 = 29F016 mode, 03 = 29F400, 04 = 29LV800 mode Simultaneous Operation 00 = Not Supported, X = Number of Sectors (excluding Bank 1) Burst Mode Type 00 = Not Supported, 01 = Supported Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page ACC (Acceleration) Supply Minimum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV ACC (Acceleration) Supply Maximum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV Top/Bottom Boot Sector Flag 0000h 0000h 0085h 4Eh 0095h 4Fh 0001h 00h = Uniform device, 01h = 8 x 8 Kbyte Sectors, Top And Bottom Boot with Write Protect, 02h = Bottom Boot Device, 03h = Top Boot Device, 04h = Both Top and Bottom Program Suspend 0 = Not supported, 1 = Supported Bank Organization 00 = Data at 4Ah is zero, X = Number of Banks Bank 1 Region Information X = Number of Sectors in Bank 1 Bank 2 Region Information X = Number of Sectors in Bank 2 Bank 3 Region Information X = Number of Sectors in Bank 3 Bank 4 Region Information X = Number of Sectors in Bank 4 50h 0001h 57h 0004h 58h 0017h 59h 0030h 5Ah 0030h 5Bh 0017h February 6, 2004 Am50DL128CH 25 ADVANCE INFORMATION FLASH COMMAND DEFINITIONS Writing specific address and data commands or sequences into the command register initiates device operations. Table 11 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. A reset command is then required to return the device to reading array data. All addresses are latched on the falling edge of WE# or CE#f, whichever happens later. All data is latched on the rising edge of WE# or CE#f, whichever happens first. Refer to the pSRAM AC Characteristics section for timing diagrams. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the bank to which the system was writing to the read mode. If the program command sequence is written to a bank that is in the Erase Suspend mode, writing the reset co m m an d re tur ns th a t ba nk to the e ra s e- s us pend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to the read mode. If a bank entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. If DQ5 goes high during a program or erase operation, writing the reset command returns the banks to the read mode (or erase-suspend-read mode if that bank was in Erase Suspend). Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. Each bank is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the corresponding ban k enters the erase-suspend-read mode, after which the system can read data from any non-erase-suspended sector within the same bank. The system can read array data using the standard read timing, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information. The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the bank is in the autoselect mode. See the next section, Reset Command, for more information. See also Requirements for Reading Array Data in the section for more information. The Flash Read-Only Operations table provides the read parameters, and Figure 15 shows the timing diagram. Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or not a sector is protected. The autoselect command sequence may be written to an address within a bank that is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing in the other bank. The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect mode. The system may read any number of autoselect codes without reinitiating the command sequence. Table 11 shows the address and data requirements. To determine sector protection information, the system must write to the appropriate bank address (BA) and sector address (SADD). Table 2 shows the address range and bank number associated with each sector. The system must write the reset command to return to the read mode (or erase-suspend-read mode if the bank was previously in Erase Suspend). Reset Command Writing the reset command resets the banks to the read or erase-suspend-read mode. Address bits are don’t cares for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the bank to which the system was writing to the read mode. Once erasure begins, however, the device ignores reset commands until the operation is complete. Enter SecSi™ Sector/Exit SecSi Sector Command Sequence The SecSi Sector region provides a secured data area containing a random, sixteen-byte electronic serial number (ESN). The system can access the SecSi Sector region by issuing the three-cycle Enter SecSi 26 Am50DL128CH February 6, 2004 ADVANCE INFORMATION cause that bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the data is still “0.” Only erase operations can convert a “0” to a “1.” Unlock Bypass Command Sequence The unlock bypass feature allows the system to program bytes or words to a bank faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. That bank then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 11 shows the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. (See Table 11). The device offers accelerated program operations through the WP#/ACC pin. When the system asserts VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at V HH a ny operation other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. Figure 4 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations table in the AC Characteristics section for parameters, and Figure 17 for timing diagrams. Sector command sequence. The device continues to access the SecSi Sector region until the system issues the four-cycle Exit SecSi Sector command sequence. The Exit SecSi Sector command sequence returns the device to normal operation. The SecSi Sector is not accessible when the device is executing an Embedded Program or embedded Erase algorithm. Table 11 shows the address and data requirements for both command sequences. See also “SecSi™ (Secured Silicon) Sector Flash Memory Region” for further information. Note that the ACC function and unlock bypass modes are not available when the SecSi Sector is enabled. Word Program Command Sequence The system may program the device by word. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is n ot r equired to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. Table 11 shows the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, that bank then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. Refer to the Flash Write Operation Status section for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the program operation. Note that the SecSi Sector, autoselect, and CFI functions are unavailable when a program operation is in progress. The program command sequence should be reinitiated once that bank has returned to the read mode, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A b it cannot be programmed from “0” back to a “1.” A ttempting to do so may February 6, 2004 Am50DL128CH 27 ADVANCE INFORMATION START eration is in progress. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Figure 5 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 19 section for timing diagrams. Write Program Command Sequence Embedded Program algorithm in progress Data Poll from System Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table 11 shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of 80 µs occurs. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 80 µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out may or may not be accepted. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. Any command other than Sector Erase or Erase Suspend during the time-out period resets that bank to the read mode. N ote that the SecSi Sector, autoselect, and CFI functions are unavailable when a program operation is in progress. The system must rewrite the command sequence and any additional addresses and commands. The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3: Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command sequence. When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data from the non-erasing bank. The system can de- Verify Data? No Yes No Increment Address Last Address? Yes Programming Completed Note: See Table 11 for program command sequence. Figure 4. Program Operation Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 11 shows the address and data requirements for the chip erase command sequence. When the Embedded Erase algorithm is complete, that bank returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to the Flash Write Operation Status section for information on these status bits. Any commands written during the chip erase operation are ignored. Note that the SecSi Sector, autoselect, and CFI functions are unavailable when a program op- 28 Am50DL128CH February 6, 2004 ADVANCE INFORMATION data from, or program data to, any sector not selected for erasure. The bank address is required when writing this command. This command is valid only during the sector erase operation, including the 80 µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. Addresses are “don’t-cares” when writing the Erase suspend command. After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to the Flash Write Operation Status section for information on these status bits. termine the status of the erase operation by reading DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer to the Flash Write Operation Status section for information on these status bits. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Figure 5 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 19 section for timing diagrams. START Write Erase Command Sequence (Notes 1, 2) Data Poll to Erasing Bank from System Embedded Erase algorithm in progress No Data = FFh? After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard Byte Program operation. Refer to the Flash Write Operation Status section for more information. In the erase-suspend-read mode, the system can also issue the autoselect command sequence. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. Refer to the Sector/Sector Block Protection and Unprotection and Autoselect Command Sequence sections for details. To resume the sector erase operation, the system must write the Erase Resume command (address bits are don’t care). The bank address of the erase-suspended bank is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. Yes Erasure Completed Notes: 1. See Table 11 for erase command sequence. 2. See the section on DQ3 for information on the sector erase timer. Figure 5. Erase Operation Erase Suspend/Erase Resume Commands The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read February 6, 2004 Am50DL128CH 29 ADVANCE Table 11. Command Sequence (Note 1) Read (Note 6) Reset (Note 7) Autoselect (Note 8) Manufacturer ID Device ID (Note 9) SecSi Sector Factory Protect (Note 10) Sector/Sector Block Protect Verify (Note 11) Word Word Word Word Word Word Word Word Cycles First Addr Data RA RD XXX F0 555 555 555 555 555 555 555 555 XXX XXX 555 555 BA BA 55 AA AA AA AA AA AA AA AA A0 90 AA AA B0 30 98 INFORMATION Am29DL640H Command Definitions Second Addr Data Bus Cycles (Notes 2–5) Third Fourth Addr Data Addr Data Fifth Addr Data Sixth Addr Data 1 1 4 6 4 4 3 4 4 3 2 2 6 6 1 1 1 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA PA XXX 2AA 2AA 55 55 55 55 55 55 55 55 PD 00 55 55 (BA)555 (BA)555 (BA)555 (BA)555 555 555 555 555 90 90 90 90 88 90 A0 20 (BA)X00 (BA)X01 01 7E (BA)X0E 02 (BA)X0F 01 (BA)X03 80/00 (SADD) 00/01 X02 Enter SecSi Sector Region Exit SecSi Sector Region Program Unlock Bypass XXX PA 00 PD Unlock Bypass Program (Note 12) Unlock Bypass Reset (Note 13) Chip Erase Word Sector Erase Word Erase Suspend (Note 14) Erase Resume (Note 15) CFI Query (Note 16) Word 555 555 80 80 555 555 AA AA 2AA 2AA 55 55 555 SADD 10 30 Legend: X = Don’t care RA = Address of the memory location to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE#f pulse, whichever happens later. PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE#f pulse, whichever happens first. SADD = Address of the sector to be verified (in autoselect mode) or erased. Address bits A21–A12 uniquely select any sector. Refer to Table 2 for information on sector addresses. BA = Address of the bank that is being switched to autoselect mode, is in bypass mode, or is being erased. Address bits A21–A19 select a bank. Refer to Table 3 for information on sector addresses. Notes: 1. See Tables 1 for description of bus operations. 2. All values are in hexadecimal. 3. Except for the read cycle and the fourth cycle of the autoselect command sequence, all bus cycles are write cycles. 4. Data bits DQ15–DQ8 are don’t care in command sequences, except for RD and PD. 5. Unless otherwise noted, address bits A21–A12 are don’t cares for unlock and command cycles, unless SADD or PA is required. 6. No unlock or command cycles required when bank is reading array data. 7. The Reset command is required to return to the read mode (or to the erase-suspend-read mode if previously in Erase Suspend) when a bank is in the autoselect mode, or if DQ5 goes high (while the bank is providing status information). 8. The fourth cycle of the autoselect command sequence is a read cycle. The system must provide the bank address to obtain the manufacturer ID, device ID, or SecSi Sector factory protect information. Data bits DQ15–DQ8 are don’t care. See the Autoselect Command Sequence section for more information. 9. The device ID must be read across the fourth, fifth, and sixth cycles. 10. The data is 80h for factory locked, 40h for customer locked and 00h for not factory/customer locked. 11. The data is 00h for an unprotected sector/sector block and 01h for a protected sector/sector block. 12. The Unlock Bypass command is required prior to the Unlock Bypass Program command. 13. The Unlock Bypass Reset command is required to return to the read mode when the bank is in the unlock bypass mode. 14. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation, and requires the bank address. 15. The Erase Resume command is valid only during the Erase Suspend mode, and requires the bank address. 16. Command is valid when device is ready to read array data or when device is in autoselect mode. 30 Am50DL128CH February 6, 2004 ADVANCE INFORMATION when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid data, the data outputs on DQ15–DQ0 may be still invalid. Valid data on DQ15–DQ0 (or DQ7–DQ0 for byte mode) will appear on successive read cycles. Table 12 shows the outputs for Data# Polling on DQ7. Figure 6 shows the Data# Polling algorithm. Figure 21 in the pSRAM AC Characteristics section shows the Data# Polling timing diagram. START FLASH WRITE OPERATION STATUS The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 12 and the following subsections describe the function of these bits. DQ7 and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether an Embedded Program or Erase operation is in progress or has been completed. DQ7: Data# Polling The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to the read mode. During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the bank enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the bank returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. When the system detects DQ7 has changed from the complement to true data, it can read valid data at DQ15–DQ0 (or DQ7–DQ0 for byte mode) on the following read cycles. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ15–DQ8 (DQ7–DQ0 in byte mode) while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on Read DQ7–DQ0 Addr = VA DQ7 = Data? Yes No No DQ5 = 1? Yes Read DQ7–DQ0 Addr = VA DQ7 = Data? Yes No FAIL PASS Notes: 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 6. Data# Polling Algorithm February 6, 2004 Am50DL128CH 31 ADVANCE INFORMATION DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Table 12 shows the outputs for Toggle Bit I on DQ6. Figure 7 shows the toggle bit algorithm. Figure 22 in the “Flash AC Characteristics” section shows the toggle bit timing diagrams. Figure 23 shows the differences between DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit II. START RY/BY#: Ready/Busy# The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or one of the banks is in the erase-suspend-read mode. Table 12 shows the outputs for RY/BY#. Read Byte (DQ7–DQ0) Address =VA Read Byte (DQ7–DQ0) Address =VA DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. The system may use either OE# or CE#f to control the read cycles. When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7: Data# Polling). If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program command sequence is written, then returns to reading array data. Toggle Bit = Toggle? Yes No No DQ5 = 1? Yes Read Byte Twice (DQ7–DQ0) Address = VA Toggle Bit = Toggle? No Yes Program/Erase Operation Not Complete, Write Reset Command Program/Erase Operation Complete Note: The system should recheck the toggle bit even if DQ5 = “1” because the toggle bit may stop toggling as DQ5 changes to “1.” See the subsections on DQ6 and DQ2 for more information. Figure 7. Toggle Bit Algorithm 32 Am50DL128CH February 6, 2004 ADVANCE INFORMATION not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 7). DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE#f to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 12 to compare outputs for DQ2 and DQ6. Figure 7 shows the toggle bit algorithm in flowchart form, and the section “DQ2: Toggle Bit II” explains the algorithm. See also the DQ6: Toggle Bit I subsection. Figure 22 shows the toggle bit timing diagram. Figure 23 shows the differences between DQ2 and DQ6 in graphical form. DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not successfully completed. The device may output a “1” on DQ5 if the system tries to program a “1” to a location that was previously programmed to “0.” O nly an erase operation can change a “0” back to a “1.” Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 produces a “1.” Under both these conditions, the system must write the reset command to return to the read mode (or to the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode). DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a “0” to a “1.” If the time between additional sector erase commands from the system can be assumed to be less than 50 µs, the system need not monitor DQ3. See also the Sector Erase Command Sequence section. After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is “1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0,” the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 12 shows the status of DQ3 relative to the other status bits. Reading Toggle Bits DQ6/DQ2 Refer to Figure 7 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ15–DQ0 (or DQ7–DQ0 for byte mode) at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ15–DQ0 (or DQ7–DQ0 for byte mode) on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has February 6, 2004 Am50DL128CH 33 ADVANCE Table 12. Status Embedded Program Algorithm Embedded Erase Algorithm Erase Erase-Suspend- Suspended Sector Read Non-Erase Suspended Sector Erase-Suspend-Program INFORMATION Write Operation Status Standard Mode Erase Suspend Mode DQ7 (Note 2) DQ7# 0 1 Data DQ7# DQ6 Toggle Toggle No toggle Data Toggle DQ5 (Note 1) 0 0 0 Data 0 DQ3 N/A 1 N/A Data N/A DQ2 (Note 2) No toggle Toggle Toggle Data N/A RY/BY# 0 0 1 1 0 Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the section on DQ5 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm is in progress. The device outputs array data if the system addresses a non-busy bank. 34 Am50DL128CH February 6, 2004 ADVANCE INFORMATION ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . –55°C to +125°C Ambient Temperature with Power Applied. . . . . . . . . . . . . . . –40°C to +85°C Voltage with Respect to Ground VCCf, VCCs (Note 1) . . . . . . . . . . . . –0.5 V to +4.0 V RESET# (Note 2) . . . . . . . . . . . .–0.5 V to +12.5 V WP#/ACC . . . . . . . . . . . . . . . . . . –0.5 V to +10.5 V All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V Output Short Circuit Current (Note 3) . . . . . . 200 mA Notes: 1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may overshoot V SS t o –2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. See Figure 8. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 9. 2. Minimum DC input voltage on pins RESET#, and WP# /ACC is –0 .5 V. D ur ing volt age trans itions, WP#/ACC, and RESET# may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 8. Maximum DC input voltage on pin RESET# is +12.5 V which may overshoot to +14.0 V for periods up to 20 ns. Maximum DC input voltage on WP#/ACC is +9.5 V which may overshoot to +12.0 V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. +0.8 V –0.5 V –2.0 V 20 ns 20 ns 20 ns Figure 8. Maximum Negative Overshoot Waveform 20 ns VCC +2.0 V VCC +0.5 V 2.0 V 20 ns 20 ns Figure 9. Maximum Positive Overshoot Waveform OPERATING RANGES Industrial (I) Devices Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C VCCf/VCCs Supply Voltages VCCf/VCCs for standard voltage range . . 2.7 V to 3.3 V Operating ranges define those limits between which the functionality of the device is guaranteed. devices that are developed by a third party (‘third-party components”). Spansion components are tested and guaranteed to the ESD immunity levels listed in the corresponding Spansion Flash memory Qualification Database. Third-party components are neither tested nor guaranteed by FASL LLC for ESD immunity. However, ESD test results for third-party components may be available from the component manufacturer. Component manufacturer contact information is listed in the Spansion MCP Qualification Report, when available. The Spansion Flash memory Qualification Database and Spansion MCP Qualification Report are available from AMD and Fujitsu sales offices. ESD IMMUNITY Spansion Flash memory Multi-Chip Products (MCPs) may contain component devices that are developed by FASL LLC (“Spansion components”) and component February 6, 2004 Am50DL128CH 35 ADVANCE INFORMATION Third-party components are neither tested nor guaranteed by FASL LLC for ESD immunity. However, ESD test results for third-party components may be available from the component manufacturer. Component manufacturer contact information is listed in the Spansion MCP Qualification Report, when available. The Spansion Flash memory Qualification Database and Spansion MCP Qualification Report are available from AMD and Fujitsu sales offices. ESD Immunity Spansion Flash memory Multi-Chip Products (MCPs) may contain component devices that are developed by FASL LLC ("Spansion components") and component d ev i c e s t h a t a r e d ev e l o p e d b y a t h i r d p a r t y ("third-party components") Spansion components are tested and guaranteed to the ESD immunity levels listed in the corresponding Spansion Flash memory Qualification Database. 36 Am50DL128CH February 6, 2004 ADVANCE INFORMATION FLASH DC CHARACTERISTICS CMOS Compatible Parameter Symbol ILI ILIT ILR ILO ILIA Parameter Description Input Load Current RESET# Input Load Current Reset Leakage Current Output Leakage Current ACC Input Leakage Current Test Conditions VIN = VSS to VCC, VCC = VCC max VCC = VCC max; RESET# = 12.5 V VCC = VCC max; RESET# = 12.5 V VOUT = VSS to VCC, VCC = VCC max VCC = VCC max, WP#/ACC = VACC max CE#f = VIL, OE# = VIH, Byte Mode CE#f = VIL, OE# = VIH, Word Mode 5 MHz 1 MHz 5 MHz 1 MHz 10 2 10 2 15 0.2 0.2 0.2 21 21 21 21 17 –0.2 2.4 8.5 Min Typ Max ±1.0 35 35 ±1.0 35 16 4 16 4 30 5 5 5 45 45 45 45 35 0.8 VCC + 0.2 9.5 mA µA µA µA mA mA Unit µA µA µA µA µA ICC1f Flash VCC Active Read Current (Notes 1, 2) ICC2f ICC3f ICC4f ICC5f ICC6f Flash VCC Active Write Current (Notes 2, 3) CE#f = VIL, OE# = VIH, WE# = VIL Flash VCC Standby Current (Notes 2, 7) Flash VCC Reset Current (Notes 2, 7) Flash VCC Current Automatic Sleep Mode (Notes 2, 4, 7) Flash VCC Active Read-While-Program Current (Notes 1, 2) Flash VCC Active Read-While-Erase Current (Notes 1, 2) Flash VCC Active Program-While-Erase-Suspended Current (Notes 2, 5) Input Low Voltage Input High Voltage Voltage for WP#/ACC Program Acceleration and Sector Protection/Unprotection Voltage for Sector Protection, Autoselect and Temporary Sector Unprotect Output Low Voltage IOL = 2.0 mA, VCCf = VCCs = VCC min IOH = –2.0 mA, VCCf = VCCs = VCC min IOH = –100 µA, VCC = VCC min Flash Low VCC Lock-Out Voltage (Note 5) 0.85 x VCC VCC–0.4 2.0 VCCf = VCC max, CE#f, RESET#, WP#/ACC = VCCf ± 0.3 V VCCf = VCC max, RESET# = VSS ± 0.3 V, WP#/ACC = VCCf ± 0.3 V VCCf = VCC max, VIH = VCC ± 0.3 V; VIL = VSS ± 0.3 V CE#f = VIL, OE# = VIH Byte Word Byte Word ICC7f CE#f = VIL, OE# = VIH mA ICC8f VIL VIH VHH CE#f = VIL, OE#f = VIH mA V V V VID VOL VOH1 VOH2 VLKO 11.5 12.5 0.45 V V Output High Voltage V 2.5 V Notes: 1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. 2. Maximum ICC specifications are tested with VCC = VCCmax. 3. ICC active while Embedded Erase or Embedded Program is in progress. 4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 200 nA. 5. Not 100% tested. 6. CE#f refers to chip enable input of active flash (device being addressed). 7. Typical and maximum current specifications shown are for each flash device. February 6, 2004 Am50DL128CH 37 ADVANCE INFORMATION pSRAM DC & OPERATING CHARACTERISTICS Parameter Symbol ILI ILO Parameter Description Input Leakage Current Output Leakage Current Test Conditions VIN = VSS to VCC CE1#s = VIH, CE2s = VIL or OE# = VIH or WE# = VIL, VIO= VSS to VCC Cycle time = Min., IIO = 0 mA, 100% duty, CE1#s = VIL, CE2s = VIH, VIN = VIL = or VIH, tRC = Min. Cycle time = Min., IIO = 0 mA, 100% duty, CE1#s = VIL, CE2s = VIH, VIN = VIL = or VIH, tPC = Min. IOL = 1.0 mA IOH = –0.5 mA CE#1 = VCCS – 0.2 V, CE2 = VCCS – 0.2 V CE2 = 0.2 V Min. –1.0 –1.0 Typ Max 1.0 1.0 Unit µA µA ICC1s Operating Current 40 mA ICC2s VOL VOH ISB IDSB VIL Page Access Operating Current Output Low Voltage Output High Voltage Standby Current (CMOS) Deep Power-down Standby Input Low Voltage 25 0.4 2 70 5 –0.3 (Note 1) 2.4 0.4 VCC + 0.3 (Note 2) mA V V µA µA V VIH Input High Voltage V Notes: 1. VCC – 1.0 V for a 10 ns pulse width. 2. VCC + 1.0 V for a 10 ns pulse width. 38 Am50DL128CH February 6, 2004 ADVANCE INFORMATION FLASH DC CHARACTERISTICS Zero-Power Flash 25 Supply Current in mA 20 15 10 5 0 0 500 1000 1500 2000 Time in ns 2500 3000 3500 4000 Note: Addresses are switching at 1 MHz Figure 10. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) 12 3.3 V 10 2.7 V 8 Supply Current in mA 6 4 2 0 1 Note: T = 25 °C 2 3 Frequency in MHz Figure 11. Typical ICC1 vs. Frequency 4 5 February 6, 2004 Am50DL128CH 39 ADVANCE INFORMATION TEST CONDITIONS Table 13. 3.3 V 2.7 kΩ Test Condition Output Load Output Load Capacitance, CL (including jig capacitance) CL 6.2 kΩ Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels Test Specifications 56, 70, 85 1 TTL gate 30 5 0.0–3.0 1.5 1.5 pF ns V V V Unit Device Under Test Note: Diodes are IN3064 or equivalent Figure 12. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM INPUTS Steady Changing from H to L Changing from L to H Don’t Care, Any Change Permitted Does Not Apply Changing, State Unknown Center Line is High Impedance State (High Z) OUTPUTS KS000010-PAL 3.0 V 0.0 V Input 1.5 V Measurement Level 1.5 V Output Figure 13. Input Waveforms and Measurement Levels 40 Am50DL128CH February 6, 2004 ADVANCE INFORMATION pSRAM AC CHARACTERISTICS CE#s Timing Parameter Test Setup JEDEC — Std tCCR Description CE#s Recover Time — Min 0 ns All Speeds Unit CE#f tCCR CE1#s tCCR tCCR CE2s tCCR Figure 14. Timing Diagram for Alternating Between Pseudo SRAM to Flash February 6, 2004 Am50DL128CH 41 ADVANCE INFORMATION FLASH AC CHARACTERISTICS Read-Only Operations Parameter JEDEC tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX Std. tRC tACC tCE tOE tDF tDF tOH Description Read Cycle Time (Note 1) Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High Z (Notes 1, 3) Output Enable to Output High Z (Notes 1, 3) Output Hold Time From Addresses, CE#f or OE#, Whichever Occurs First Read Output Enable Hold Time Toggle and (Note 1) Data# Polling CE#f, OE# = VIL OE# = VIL Test Setup Min Max Max Max Max Max Min Min Min 5 56 55 55 55 55 25 Speed 70 70 70 70 30 30 16 16 0 10 85 85 85 85 40 35 Unit ns ns ns ns ns ns ns ns ns tOEH Notes: 1. Not 100% tested. 2. See Figure 12 and Table 13 for test specifications 3. Measurements performed by placing a 50Ω termination on the data pin with a bias of VCC/2. The time from OE# high to the data bus driven to VCC/2 is taken as tDF . tRC Addresses CE#f tRH tRH OE# tOEH WE# HIGH Z Outputs RESET# RY/BY# Output Valid tCE tOH HIGH Z tOE tDF Addresses Stable tACC 0V Note: CE#f refers to active flash device being addressed (either CE#f1 or CE#f2). The chip enable input of the inactive flash device must be held high during this operation. Figure 15. Read Operation Timings 42 Am50DL128CH February 6, 2004 ADVANCE INFORMATION FLASH AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std tReady tReady tRP tRH tRPD tRB Description RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note) RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode (See Note) RESET# Pulse Width Reset High Time Before Read (See Note) RESET# Low to Standby Mode RY/BY# Recovery Time Max Max Min Min Min Min All Speed Options 20 500 500 50 20 0 Unit µs ns ns ns µs ns Note: Not 100% tested. RY/BY#1, RY/BY#2 CE#f, OE# tRH RESET#1, RESET#2 tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY#1, RY/BY#2 tRB CE#f, OE# RESET#1, RESET#2 tRP Note: CE#f refers to the flash device being reset (either CE#f1 or CE#f2). Figure 16. Reset Timings February 6, 2004 Am50DL128CH 43 ADVANCE INFORMATION FLASH AC CHARACTERISTICS Erase and Program Operations Parameter JEDEC tAVAV tAVWL Std tWC tAS tASO tWLAX tAH tAHT tDVWH tWHDX tDS tDH tOEPH tGHWL tWLEL tELWL tEHWH tWHEH tWLWH tWHDL tGHWL tWS tCS tWH tCH tWP tWPH tSR/W tWHWH1 tWHWH1 tWHWH2 tWHWH1 tWHWH1 tWHWH2 tVCS tRB tBUSY Description Write Cycle Time (Note 1) Address Setup Time Address Setup Time to OE# low during toggle bit polling Address Hold Time Address Hold Time From CE#f or OE# high during toggle bit polling Data Setup Time Data Hold Time Output Enable High during toggle bit polling Read Recovery Time Before Write (OE# High to WE# Low) WE# Setup Time (CE#f to WE#) CE#f Setup Time WE# Hold Time (CE#f to WE#) CE#f Hold Time Write Pulse Width Write Pulse Width High Latency Between Read and Write Operations Programming Operation (Note 2) Accelerated Programming Operation, Word or Byte (Note 2) Sector Erase Operation (Note 2) VCC Setup Time (Note 1) Write Recovery Time from RY/BY# Program/Erase Valid to RY/BY# Delay Word Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Min Typ Typ Typ Min Min Max 25 30 30 56 55 Speed 70 70 0 15 40 0 40 0 20 0 0 0 0 0 30 30 0 7 4 0.4 50 0 90 35 45 45 85 85 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns µs µs sec µs ns ns Notes: 1. Not 100% tested. 2. See the “Flash Erase And Programming Performance” section for more information. 3. CE#f refers to chip enable input of active flash (device being addressed). 44 Am50DL128CH February 6, 2004 ADVANCE INFORMATION FLASH AC CHARACTERISTICS Program Command Sequence (last two cycles) tWC Addresses 555h tAS PA tAH CE#f tGHWL OE# tWP WE# tCS tDS Data tDH PD tBUSY RY/BY# Status DOUT tRB tWPH tWHWH1 PA PA Read Status Data (last two cycles) tCH A0h VCCf tVCS Notes: 1. PA = program address, PD = program data, DOUT is the true data at the program address. 2. Illustration shows device in word mode. 3. CE#f refers to active flash device being addressed (either CE#f1 or CE#f2). The chip enable input of the inactive flash device must be held high during this operation. Figure 17. Program Operation Timings VHH WP#/ACC VIL or VIH tVHH tVHH VIL or VIH Figure 18. Accelerated Program Timing Diagram February 6, 2004 Am50DL128CH 45 ADVANCE INFORMATION FLASH AC CHARACTERISTICS Erase Command Sequence (last two cycles) tWC Addresses 2AAh tAS SADD 555h for chip erase Read Status Data VA tAH VA CE#f tGHWL OE# tWP WE# tCS tDS tDH Data 55h 30h 10 for Chip Erase In Progress Complete tCH tWPH tWHWH2 tBUSY RY/BY# tVCS VCCf tRB Notes: 1. SADD = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Flash Write Operation Status”. 2. These waveforms are for the word mode. 3. CE#f refers to active flash device being addressed (either CE#f1 or CE#f2). The chip enable input of the inactive flash device must be held high during this operation. Figure 19. Chip/Sector Erase Operation Timings 46 Am50DL128CH February 6, 2004 ADVANCE INFORMATION FLASH AC CHARACTERISTICS tWC Addresses Valid PA tRC Valid RA tWC Valid PA tWC Valid PA tAH tACC CE#f tCPH tCE tOE tCP OE# tOEH tWP WE# tWPH tDS tDH Data Valid In tGHWL tDF tOH Valid Out Valid In Valid In tSR/W WE# Controlled Write Cycle Read Cycle CE#f Controlled Write Cycles Note: CE#f refers to active flash device being addressed (either CE#f1 or CE#f2). The chip enable input of the inactive flash device must be held high during this operation. Figure 20. Back-to-back Read/Write Cycle Timings tRC Addresses VA tACC tCE CE#f tCH OE# tOEH WE# tOH DQ7 High Z VA VA tOE tDF Complement Complement True Valid Data High Z DQ6–DQ0 tBUSY Status Data Status Data True Valid Data Notes: 1. VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. 2. CE#f refers to active flash device being addressed (either CE#f1 or CE#f2). The chip enable input of the inactive flash device must be held high during this operation. RY/BY# Figure 21. Data# Polling Timings (During Embedded Algorithms) February 6, 2004 Am50DL128CH 47 ADVANCE INFORMATION FLASH AC CHARACTERISTICS tAHT Addresses tAHT tASO CE#f tOEH WE# tOEPH OE# tDH DQ6/DQ2 Valid Data Valid Status tAS tCEPH tOE Valid Status Valid Status Valid Data (first read) RY/BY# (second read) (stops toggling) Note: 1. VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle. 2. CE#f refers to active flash device being addressed (either CE#f1 or CE#f2). The chip enable input of the inactive flash device must be held high during this operation. Figure 22. Toggle Bit Timings (During Embedded Algorithms) Enter Embedded Erasing WE# Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Program Erase Resume Erase Suspend Read Erase Erase Complete Erase Suspend Read DQ6 DQ2 Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE#f to toggle DQ2 and DQ6. Figure 23. DQ2 vs. DQ6 48 Am50DL128CH February 6, 2004 ADVANCE INFORMATION FLASH AC CHARACTERISTICS Temporary Sector Unprotect Parameter JEDEC Std tVIDR tVHH tRSP tRRB Description VID Rise and Fall Time (See Note) VHH Rise and Fall Time (See Note) RESET# Setup Time for Temporary Sector Unprotect RESET# Hold Time from RY/BY# High for Temporary Sector Unprotect Min Min Min Min All Speed Options 500 250 4 4 Unit ns ns µs µs Note: Not 100% tested. VID RESET# VSS, VIL, or VIH tVIDR Program or Erase Command Sequence CE#f tVIDR VID VSS, VIL, or VIH WE# tRSP RY/BY# Note: CE#f refers to active flash device being addressed (either CE#f1 or CE#f2). The chip enable input of the inactive flash device must be held high during this operation. tRRB Figure 24. Temporary Sector Unprotect Timing Diagram February 6, 2004 Am50DL128CH 49 ADVANCE INFORMATION FLASH AC CHARACTERISTICS VID VIH RESET# SADD, A6, A1, A0 Valid* Sector/Sector Block Protect or Unprotect Valid* Verify 40h Sector/Sector Block Protect: 150 µs, Sector/Sector Block Unprotect: 15 ms Valid* Data 60h 60h Status 1 µs CE#f WE# OE# * For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0, SADD = Sector Address. Note: CE#f refers to active flash device being addressed (either CE#f1 or CE#f2). The chip enable input of the inactive flash device must be held high during this operation. Figure 25. Sector/Sector Block Protect and Unprotect Timing Diagram 50 Am50DL128CH February 6, 2004 ADVANCE INFORMATION FLASH AC CHARACTERISTICS Alternate CE#f Controlled Erase and Program Operations Parameter JEDEC tAVAV tAVWL tELAX tDVEH tEHDX tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH1 tWHWH2 Std tWC tAS tAH tDS tDH tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH1 tWHWH2 Description Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recovery Time Before Write (OE# High to WE# Low) WE# Setup Time WE# Hold Time CE#f Pulse Width CE#f Pulse Width High Programming Operation (Note 2) Accelerated Programming Operation, Word or Byte (Note 2) Sector Erase Operation (Note 2) Word Min Min Min Min Min Min Min Min Min Min Typ Typ Typ 25 25 7 4 0.4 30 30 56 55 Speed 70 70 0 40 40 0 0 0 0 40 30 45 45 45 85 85 Unit ns ns ns ns ns ns ns ns ns ns µs µs sec Notes: 1. Not 100% tested. 2. See the “Flash Erase And Programming Performance” section for more information. 3. CE#f refers to active flash device being addressed (either CE#f1 or CE#f2). February 6, 2004 Am50DL128CH 51 ADVANCE INFORMATION FLASH AC CHARACTERISTICS 555 for program 2AA for erase PA for program SADD for sector erase 555 for chip erase Data# Polling PA Addresses tWC tWH WE# tGHEL OE# tCP CE#f tWS tCPH tDS tDH Data tRH A0 for program 55 for erase PD for program 30 for sector erase 10 for chip erase tAS tAH tWHWH1 or 2 tBUSY DQ7# DOUT RESET# RY/BY# Notes: 1. Figure indicates last two bus cycles of a program or erase operation. 2. PA = program address, SADD = sector address, PD = program data. 3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device. 4. CE#f refers to active flash device being addressed (either CE#f1 or CE#f2). The chip enable input of the inactive flash device must be held high during this operation. 5. Waveforms are for the word mode. Figure 26. Flash Alternate CE#f Controlled Write (Erase/Program) Operation Timings 52 Am50DL128CH February 6, 2004 ADVANCE INFORMATION pSRAM AC CHARACTERISTICS Read Cycle Parameter Symbol tRC tACC tCO tOE tBA tCOE tOEE tBE tOD tODO tBD tOH tPM tPC tAA tAOH Description Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Data Byte Control Access Time Chip Enable Low to Output Active Output Enable Low to Output Active Data Byte Control Low to Output Active Chip Enable High to Output High-Z Output Enable High to Output High-Z Data Byte Control High to Output High-Z Output Data Hold from Address Change Page Mode Time Page Mode Cycle Time Page Mode Address Access Time Page Output Data Hold Time tRC Speed 56, 70 Min Max Max Max Max Min Min Min Max Max Max Min Min Min Max Min 70 70 70 25 25 10 0 0 20 20 20 10 70 30 30 10 85 85 85 85 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Addresses A20 to A0 tACC tCO tOH CE#1 CE2 tOD tOE Fixed High OE# tODO WE# LB#, UB# tBE tOEE tCOE tBA tBD High-Z Indeterminate Valid Data Out DOUT DQ15 to DQ0 High-Z Notes: 1. tOD, tODo, tBD, and tODW are defined as the time at which the outputs achieve the open circuit condition and are not referenced to output voltage levels. 2. If CE#, LB#, or UB# goes low at the same time or before WE# goes high, the outputs will remain at high impedance. 3. If CE#, LB#, or UB# goes low at the same time or after WE# goes low, the outputs will remain at high impedance. Figure 27. Pseudo SRAM Read Cycle February 6, 2004 Am50DL128CH 53 ADVANCE INFORMATION pSRAM AC CHARACTERISTICS tPM Addresses A2 to A0 tRC tPC tPC tPC Addresses A20 to A3 CE#1 CE2 Fixed High OE# WE# LB#, UB# tOE tBA tOEE tBE tAOH tAOH tAOH tOD tBD tOH DOUT tAA tODO DOUT DQ15 to DQ0 tCOE tCO tACC DOUT tAA DOUT tAA DOUT Maximum 8 words Notes: 1. tOD, tODo, tBD, and tODW are defined as the time at which the outputs achieve the open circuit condition and are not referenced to output voltage levels. 2. If CE#, LB#, or UB# goes low at the same time or before WE# goes high, the outputs will remain at high impedance. 3. If CE#, LB#, or UB# goes low at the same time or after WE# goes low, the outputs will remain at high impedance. Figure 28. Page Read Timing 54 Am50DL128CH February 6, 2004 ADVANCE INFORMATION pSRAM AC CHARACTERISTICS Write Cycle Parameter Symbol tWC tWP tCW tBW tAW tAS tWR tODW tOEW tDS tDH tCH Description Write Cycle Time Write Pulse Time Chip Enable to End of Write Data Byte Control to End of Write Address Valid to End of Write Address Setup Time Write Recovery Time WE# Low to Write to Output High-Z WE# High to Write to Output Active Data Set-up Time Data Hold from Write Time CE2 Hold Time Min Min Min Min Min Min Min Max Min Min Min Min Speed 56, 70 70 50 60 60 60 0 0 20 0 30 0 300 ns µs 85 85 60 70 70 70 Unit ns ns ns ns ns ns ns ns ns tWC Addresses A20 to A0 tAS tWP tWR WE# tCW CE#1 tCH CE2 tBW LB#, UB# (Note 3) DOUT DQ15 to DQO tODW High-Z tOEW (Note 4) tDS tDH DIN DQ15 to DQ0 (Note 1) Valid Data In Notes: 1. If the device is using the I/Os to output data, input signals of reverse polarity must not be applied. 2. If OE# is high during the write cycle, the outputs will remain at high impedance. 3. If CE#1ps, LB# or UB# goes low at the same time or after WE# goes low, the outputs will remain at high impedance. 4. If CE#1ps, LB# or UB# goes high at the same time or before WE# goes high, the outputs will remain at high impedance. Figure 29. Pseudo SRAM Write Cycle—WE# Control February 6, 2004 Am50DL128CH 55 ADVANCE INFORMATION pSRAM AC CHARACTERISTICS tWC Addresses A20 to A0 tAS tWP tWR WE# tCW CE#1 tCH CE2 tBW LB#, UB# tBE tODW High-Z DOUT DQ15 to DQ0 High-Z tCOE tDS tDH DIN DQ15 to DQ0 (Note 1) Valid Data In (Note 1) Notes: 1. If the device is using the I/Os to output data, input signals of reverse polarity must not be applied. 2. If OE# is high during the write cycle, the outputs will remain at high impedance. Figure 30. Pseudo SRAM Write Cycle—CE#1ps Control 56 Am50DL128CH February 6, 2004 ADVANCE INFORMATION pSRAM AC CHARACTERISTICS tWC Addresses A20 to A0 tAS tWP tWR WE# tCW CE#1 tCH CE2 tBW UB#, LB# tCOE tODW tBE DOUT DQ15 to DQ0 High-Z High-Z tDS tDH DIN DQ15 to DQ0 Valid Data In Notes: 1. If the device is using the I/Os to output data, input signals of reverse polarity must not be applied. 2. If OE# is high during the write cycle, the outputs will remain at high impedance. Figure 31. Pseudo SRAM Write Cycle— UB#s and LB#s Control February 6, 2004 Am50DL128CH 57 ADVANCE INFORMATION FLASH ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Byte Program Time Accelerated Byte/Word Program Time Word Program Time Chip Program Time (Note 3) Word Mode Typ (Note 1) 0.4 56 5 4 7 28 150 120 210 84 Max (Note 2) 5 Unit sec sec µs µs µs sec Excludes system level overhead (Note 5) Comments Excludes 00h programming prior to erasure (Note 4) Notes: 1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 11 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTICS Description Input voltage with respect to VSS on all pins except I/O pins (including A9, OE#, and RESET#) Input voltage with respect to VSS on all I/O pins VCC Current Min –1.0 V –1.0 V –100 mA Max 12.5 V VCC + 1.0 V +100 mA Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time. PACKAGE PIN CAPACITANCE Parameter Symbol CIN COUT CIN2 CIN3 Parameter Description Input Capacitance Output Capacitance Control Pin Capacitance WP#/ACC Pin Capacitance Test Setup VIN = 0 VOUT = 0 VIN = 0 VIN = 0 Typ 11 12 14 17 Max 14 16 16 20 Unit pF pF pF pF Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. FLASH DATA RETENTION Parameter Description Minimum Pattern Data Retention Time Test Conditions 150°C 125°C Min 10 20 Unit Years Years 58 Am50DL128CH February 6, 2004 ADVANCE INFORMATION pSRAM DATA RETENTION Parameter Symbol VDR IDR tCS tCH tDPD tCHC tCHP Parameter Description VCC for Data Retention Data Retention Current CE2 Setup Time CE2 Hold Time CE2 Pulse Width CE2 Hold from CE#1 CE2 Hold from Power On Test Setup CS1#s ≥ VCC – 0.2 V (Note 1) VCC = 3.0 V, CE1#s ≥ VCC – 0.2 V (Note 1) 0 300 10 0 30 Min 2.7 1.0 (Note 2) Typ Max 3.3 100 Unit V µA ns µs ms ns µs Notes: 1. CE1#s ≥ VCC – 0.2 V, CE2s ≥ VCC – 0.2 V (CE1#s controlled) or CE2s ≤ 0.2 V (CE2s controlled). 2. Typical values are not 100% tested. pSRAM POWER ON AND DEEP POWER DOWN CE#1 tDPD CE#2 tCS tCH Figure 32. Deep Power-down Timing VDD VDD min CE#1 tCHP tCHC CE#2 tCH Figure 33. Power-on Timing February 6, 2004 Am50DL128CH 59 ADVANCE INFORMATION pSRAM ADDRESS SKEW over 10 µs CE#1 WE# Address tRC min Figure 34. Read Address Skew Note: If multiple invalid address cycles shorter than tRC min occur for a period greater than 10 µs, at least one valid address cycle over tRC min is required during that period. over 10 µs CE#1 tWP min WE# Address tWC min Figure 35. Write Address Skew Note: If multiple invalid address cycles shorter than tWC min occur for a period greater than 10 µs, at least one valid address cycle over tWC min, in addition to tWP min, is required during that period. 60 Am50DL128CH February 6, 2004 ADVANCE INFORMATION PHYSICAL DIMENSIONS FTA088—88-Ball Fine-Pitch Grid Array 11.6 x 8 mm D 0.15 C (2X) 10 9 8 7 A D1 eD SE 7 E1 E eE 6 5 4 3 2 1 INDEX MARK PIN A1 CORNER 10 M L K J H G F E D CB A B 7 TOP VIEW 0.15 C (2X) SD PIN A1 CORNER BOTTOM VIEW A A2 A1 6 0.20 C C 0.08 C SIDE VIEW b M CAB MC 88X 0.15 0.08 NOTES: PACKAGE JEDEC FTA 088 N/A 11.60 mm x 8.00 mm PACKAGE SYMBOL A A1 A2 D E D1 E1 MD ME n φb eE eD SD / SE 0.30 MIN --0.25 1.00 NOM ------11.60 BSC. 8.00 BSC. 8.80 BSC. 7.20 BSC. 12 10 88 0.35 0.80 BSC. 0.80 BSC 0.40 BSC. 0.40 MAX 1.40 --1.11 PROFILE BALL HEIGHT BODY THICKNESS BODY SIZE BODY SIZE MATRIX FOOTPRINT MATRIX FOOTPRINT MATRIX SIZE D DIRECTION MATRIX SIZE E DIRECTION BALL COUNT BALL DIAMETER BALL PITCH BALL PITCH SOLDER BALL PLACEMENT 9. 8. 7 6 NOTE 2. 3. 4. 5. 1. DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994. ALL DIMENSIONS ARE IN MILLIMETERS. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010. e REPRESENTS THE SOLDER BALL GRID PITCH. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION. n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME. DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. N/A A3,A4,A5,A6,A7,A8,B1,B10,C1,C10,D1,D10 DEPOPULATED SOLDER BALLS E1,E10,F1,F10,G1,G10,H1,H10 J1,J10,K1,K10,L1,L10,M3,M4,M5,M6,M7,M8 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. 3237 \ 16-038.14b February 6, 2004 Am50DL128CH 61 ADVANCE INFORMATION REVISION SUMMARY Revision A (October 6, 2003) Initial release. Revision A+2 (November 25, 2003) Flash DC Characteristics - CMOS Compatible Changed IOL test conditions for VOL from 4.0 mA to 2.0 mA. Revision A+1 (November 7, 2003) Write Cycle Table Removed tCEH and tWEH from table. Revision A+3 (February 6, 2004) ESD Immunity Added section. 62 Am50DL128CH February 6, 2004 ADVANCE Trademarks INFORMATION Copyright © 2003 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. February 6, 2004 Am50DL128CH 63 ADVANCE INFORMATION 64 Am50DL128CH February 6, 2004