MBM29F040C-70

SPANSION Flash Memory Data Sheet TM September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a SPANSION revisions will occur when appropriate, and changes will be noted in a revision summary. TM product. Future routine Continuity of Ordering Part Numbers AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these products, please use only the Ordering Part Numbers listed in this document. For More Information Please contact your local AMD or Fujitsu sales office for additional information about SPANSION solutions. TM memory FUJITSU SEMICONDUCTOR DATA SHEET DS05-20842-4E FLASH MEMORY CMOS 4M (512K × 8) BIT MBM29F040C-55/-70/-90 s FEATURES • • • Single 5.0 V read, program and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Uses same software commands as E2PROMs Compatible with JEDEC-standard byte-wide pinouts 32-pin PLCC (Package suffix: PD) 32-pin TSOP(I) (Package suffix: PF) 32-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) Minimum 100,000 write/erase cycles High performance 55 ns maximum access time Sector erase architecture 8 equal size sectors of 64K bytes each Any combination of sectors can be concurrently erased. Also supports full chip erase. Embedded Erase™ Algorithms Automatically pre-programs and erases the chip or any sector Embedded Program™ Algorithms Automatically writes and verifies data at specified address Data Polling and Toggle Bit feature for detection of program or erase cycle completion Low VCC write inhibit ≤ 3.2 V Sector protection Hardware method disables any combination of sectors from write or erase operations Erase Suspend/Resume Suspends the erase operation to allow a read data in another sector within the same device • • • • • • • • • Embedded Erase™, Embedded Program™ and ExpressFlash™ are trademarks of Advanced Micro Devices, Inc. MBM29F040C-55/-70/-90 s PACKAGE 32-pin Plastic QFJ (PLCC) Marking Side (LCC-32P-M02) 32-pin Plastic TSOP (I) Marking Side 32-pin Plastic TSOP (I) Marking Side (FPT-32P-M24 — Assembly: Malaysia) (FPT-32P-M25 — Assembly: Malaysia) 2 MBM29F040C-55/-70/-90 s GENERAL DESCRIPTION The MBM29F040C is a 4M-bit, 5.0 V-only Flash memory organized as 512K bytes of 8 bits each. The MBM29F040C is offered in a 32-pin PLCC and 32-pin TSOP(I) package. This device is designed to be programmed in-system with the standard system 5.0 V VCC supply. A 12.0 V VPP is not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The standard MBM29F040C offers access times 55 ns and 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. The MBM29F040C is pin and command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0 V Flash or EPROM devices. The MBM29F040C is programmed by executing the program command sequence. This will invoke the Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Typically, each sector can be programmed and verified in less than 0.5 seconds. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. Any individual sector is typically erased and verified in 1 second. (If already completely preprogrammed.) The device also features a sector erase architecture. The sector mode allows for 64K byte sectors of memory to be erased and reprogrammed without affecting other sectors. The MBM29F040C is erased when shipped from the factory. The device features single 5.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7 or by the Toggle Bit feature on DQ6. Once the end of a program or erase cycle has been completed, the device internally resets to the read mode. Fujitsu's Flash technology combines years of EPROM and E2PROM experience to produce the highest levels of quality, reliability and cost effectiveness. The MBM29F040C memory electrically erases the entire chip or all bits within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the EPROM programming mechanism of hot electron injection. 3 MBM29F040C-55/-70/-90 s FLEXIBLE SECTOR-ERASE ARCHITECTURE • 64K Byte per sector • Individual-sector, multiple-sector, or bulk-erase capability • Individual or multiple-sector protection is user definable 7FFFFH 6FFFFH 5FFFFH 64K byte per sector 4FFFFH 3FFFFH 2FFFFH 1FFFFH 0FFFFH 00000H 4 MBM29F040C-55/-70/-90 s PRODUCT LINE UP Part No. VCC = 5.0 V ±5% Ordering Part No. VCC = 5.0 V ±10% Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) — 55 55 30 -70 70 70 30 -90 90 90 35 -55 MBM29F040C — — s BLOCK DIAGRAM DQ0 to DQ7 VCC VSS Erase Voltage Generator Input/Output Buffers WE State Control Command Register Program Voltage Generator CE OE Chip Enable Output Enable Logic STB Data Latch STB Y-Decoder Y-Gating Low VCC Detector Timer for Program/Erase Address Latch X-Decoder Cell Matrix A 0 to A 18 5 MBM29F040C-55/-70/-90 s CONNECTION DIAGRAMS PLCC V CC WE 31 A12 A18 A15 A16 A17 30 29 28 27 26 25 24 23 22 21 14 DQ1 15 DQ 2 16 17 DQ3 18 DQ 4 19 DQ 5 20 DQ6 A14 A13 A8 A9 A11 OE A10 CE DQ7 4 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 5 6 7 8 9 10 11 12 13 3 2 1 32 LCC-32P-M02 TSOP (I) A11 A9 A8 A13 A14 A17 WE VCC A18 A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VSS Marking Side MBM29F040C Standard Pinout 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 V SS DQ2 DQ1 DQ0 A0 A1 A2 A3 FPT-32P-M24 A4 A5 A6 A7 A12 A15 A16 A18 VCC WE A17 A14 A13 A8 A9 A11 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 Marking Side MBM29F040C Reverse Pinout 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 DQ7 CE A10 OE FPT-32P-M25 6 MBM29F040C-55/-70/-90 s LOGIC SYMBOL Table 1 Pin 19 A0 to A18 DQ0 to DQ7 8 MBM29F040C Pin Configuration Function Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Device Ground Device Power Supply A0 to A18 DQ0 to DQ7 CE OE WE VSS VCC Table 2 Operation CE OE WE MBM29F040C User Bus Operations CE L L L H L L L L OE L L L X H H VID L H WE H H H X H L A0 L H A0 X X A0 X L A1 L L A1 X X A1 X H A6 L L A6 X X A6 X L A9 VID VID A9 X X A9 VID VID I/O Code Code DOUT HIGH-Z HIGH-Z DIN X Code Auto-Select Manufacturer Code (1) Auto-Select Device Code (1) Read (3) Standby Output Disable Write (Program/Erase) Enable Sector Protection (2) Verify Sector Protection (2) Legend: L = VIL, H = VIH, X = VIL or VIH, = Pulse Input. See DC Characteristics for voltage levels. Notes: 1. Manufacturer and device codes may also be accessed via a command register write sequence. See Table 5. 2. Refer to the section on Sector Protection. 3. WE can be VIL if OE is VIL, OE at VIH initiates the write operations. 7 MBM29F040C-55/-70/-90 s ORDERING INFORMATION Standard Products Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29F040 C -55 PD PACKAGE TYPE PD =32-Pin Rectangular Plastic Leaded Chip Carrier (PLCC) PFTN = 32-Pin Thin Small Outline Package (TSOP) Standard Pinout PFTR =32-Pin Thin Small Outline Package (TSOP) Reverse Pinout SPEED OPTION See Product Selector Guide C = Device Revision DEVICE NUMBER/DESCRIPTION MBM29F040 4Mega-bit (512K × 8-Bit) CMOS Flash Memory 5.0 V-only Read, Program, and Erase 64K Byte Sectors 8 MBM29F040C-55/-70/-90 s FUNCTIONAL DESCRIPTION Read Mode The MBM29F040C has two control functions which must be satisfied in order to obtain data at the outputs. CE is the power control and should be used for a device selection. OE is the output control and should be used to gate data to the output pins if a device is selected. Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable access time (tCE) is the delay from stable addresses and stable CE to valid data at the output pins. The output enable access time is the delay from the falling edge of OE to valid data at the output pins (assuming the addresses have been stable for at least tACC-tOE time). Standby Mode The MBM29F040C has two standby modes, a CMOS standby mode (CE input held at VCC ±0.3 V.), when the current consumed is less than 5 µA; and a TTL standby mode (CE is held at VIH) when the current required is reduced to approximately 1 mA. During Embedded Algorithm operation, VCC Active current (ICC2) is required even CE = VIH. The device can be read with standard access time (tCE) from either of these standby modes. In the standby mode the outputs are in a high impedance state, independent of the OE input. If the device is deselected during erasure or programming, the device will draw active current until the operation is completed. Output Disable With the OE input at a logic high level (VIH), output from the device is disabled. This will cause the output pins to be in a high impedance state. Autoselect The autoselect mode allows the reading out of a binary code from the device and will identify its manufacturer and type. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm. This mode is functional over the entire temperature range of the device. To activate this mode, the programming equipment must force VID (11.5 V to 12.5 V) on address pin A9. Two identifier bytes may then be sequenced from the device outputs by toggling address A0 from VIL to VIH. All addresses are DON’T CARES except A0, A1, and A6. (Recommend VIL for the other pins.) The manufacturer and device codes may also be read via the command register, for instances when the MBM29F040C is erased or programmed in a system without access to high voltage on the A9 pin. The command sequence is illustrated in Table 5. (Refer to Autoselect Command section.) Byte 0 (A0 = VIL) represents the manufacture’s code (Fujitsu = 04H) and byte 1 (A0 = VIH) represents the device identifier code (MBM29F040C = A4H). These two bytes are given in the Table 3. All identifiers for manufactures and device will exhibit odd parity with the MSB (DQ7) defined as the parity bit. In order to read the proper device codes when executing the autoselect, A1 must be VIL. (See Table 3.) 9 MBM29F040C-55/-70/-90 Table 3 Type Manufacture’s Code Device Code Sector Protection A18 X X A17 X X MBM29F040C Sector Protection Verify Autoselect Codes A16 X X A6 VIL VIL VIL A1 VIL VIL VIH A0 VIL VIH VIL Code (HEX) DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0 04H A4H 01H* 0 1 0 0 0 0 0 1 0 0 0 0 0 0 0 1 1 0 0 0 0 0 0 1 Sector Addresses * : Outputs 01H at protected sector addresses and 00H at unprotected sector addresses. Table 4 Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 A18 0 0 0 0 1 1 1 1 Sector Address Tables A17 0 0 1 1 0 0 1 1 A16 0 1 0 1 0 1 0 1 Address Range 00000H to 0FFFFH 10000H to 1FFFFH 20000H to 2FFFFH 30000H to 3FFFFH 40000H to 4FFFFH 50000H to 5FFFFH 60000H to 6FFFFH 70000H to 7FFFFH Write Device erasure and programming are accomplished via the command register. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The command register is written by bringing WE to VIL, while CE is at VIL and OE is at VIH. Addresses are latched on the falling edge of WE or CE, whichever happens later; while data is latched on the rising edge of WE or CE, whichever happens first. Standard microprocessor write timings are used. Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters. Sector Protection The MBM29F040C features hardware sector protection. This feature will disable both program and erase operations in any number of sectors (0 through 8). The sector protection feature is enabled using programming equipment at the user’s site. The device is shipped with all sectors unprotected. To activate this mode, the programming equipment must force VID on address pin A9 and control pin OE, (suggest VID = 11.5 V) and CE = VIH. The sector addresses (A18, A17 and A16) should be set to the sector to be protected. Table 4 defines the sector address for each of the eight (8) individual sectors. Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Sector addresses must be held constant during the WE pulse. See figures 11 and 17 sector protection waveforms and algorithm. 10 MBM29F040C-55/-70/-90 To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9 with CE and OE at VIL and WE at VIH. Scanning the sector addresses (A16, A17 and A18) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” code at device output DQ0 for a protected sector. Otherwise the device will read 00H for unprotected sector. In this mode, the lower order addresses, except for A0, A1 and A6 are DON’T CARES. Address locations with A1 = VIL are reserved for Autoselect manufacturer and device codes. It is also possible to determine if a sector is protected in the system by writing an Autoselect command. Performing a read operation at the address location XX02H, where the higher order addresses (A16, A17 and A18) are the sector address will produce a logical “1” at DQ0 for a protected sector. See Table 3 for Autoselect codes. Table 5 Command Sequence Read/Reset Read/Reset* Read/Reset* Autoselect Byte Program Chip Erase Sector Erase Bus Write Cycles Req'd MBM29F040C Command Definitions Fifth Bus Sixth Bus First Bus Second Bus Third Bus Fourth Bus Write Cycle Write Cycle Write Cycle Read/Write Write Cycle Write Cycle Cycle Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data XXXH F0H 555H AAH 555H AAH 555H AAH 555H AAH 555H AAH — 2AAH 2AAH 2AAH 2AAH 2AAH — 55H 55H 55H 55H 55H — 555H 555H 555H 555H 555H — F0H 90H A0H 80H 80H — RA — PA — RD — PD — — — — 2AAH 2AAH — — — — 55H 55H — — — — 555H SA — — — — 10H 30H 1 4 3 4 6 6 555H AAH 555H AAH Sector Erase Suspend Sector Erase Resume Erase can be suspended during sector erase with Addr (“H” or “L”). Data (B0H) Erase can be resumed after suspend with Addr (“H” or “L”). Data (30H) Notes: 1. Address bits A11 to A18 = X = “H” or “L” for all address commands except for Program Address (PA) and Sector Address (SA). 2. Bus operations are defined in Table 2. 3. RA = Address of the memory location to be read. PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse. SA = Address of the sector to be erased. The combination of A18, A17, and A16 will uniquely select any sector. 4. RD = Data read from location RA during read operation. PD = Data to be programmed at location PA. Data is latched on the falling edge of WE. *: Either of the two reset commands will reset the device. Command Definitions Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to read mode. Table 5 defines the valid register command sequences. Note that the Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Moreover, both Read/ Reset Commands are functionally equivalent, resetting the device to the read mode. 11 MBM29F040C-55/-70/-90 Read/Reset Command The read or reset operation is initiated by writing the Read/Reset command sequence into the command register. Microprocessor read cycles retrieve array data from the memory. The device remains enabled for reads until the command register contents are altered. The device will automatically power-up in the read/reset state. In this case, a command sequence is not required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read Characteristics and Waveforms for the specific timing parameters. Autoselect Command Flash memories are intended for use in applications where the local CPU alters memory contents. As such, manufacture and device codes must be accessible while the device resides in the target system. PROM programmers typically access the signature codes by raising A9 to a high voltage (VID = 11.5 V to 12.5). However, multiplexing high voltage onto the address lines is not generally desired system design practice. The device contains an Autoselect command operation to supplement traditional PROM programming methodology. The operation is initiated by writing the Autoselect command sequence into the command register. Following the command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read cycle from address XX01H returns the device code A4H. (see Table 3.) All manufacturer and device codes will exhibit odd parity with the MSB (DQ7) defined as the parity bit. Sector state (protection or unprotection) will be informed address XX02H. Scanning the sector addresses (A16, A17, A18) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” at device output DQ0 for a protected sector. The programming verification should be perform margin mode on the protected sector. (See Table 2 and 3.) To terminate the operation, it is necessary to write the Read/Reset command sequence into the register, and also to write the Autoselect command during the operation, execute it after writing Read/Reset command sequence. Byte Programming The device is programmed on a byte-by-byte basis. Programming is a four bus cycle operation. There are two “unlock” write cycles. These are followed by the program setup command and data write cycles. Addresses are latched on the falling edge of CE or WE, whichever happens later and the data is latched on the rising edge of CE or WE, whichever happens first. The rising edge of CE or WE (whichever happens first) begins programming. Upon executing the Embedded Program Algorithm command sequence, the system is not required to provide further controls or timings. The device will automatically provide adequate internally generated program pulses and verify the programmed cell margin. The automatic programming operation is completed when the data on DQ7 is equivalent to data written to this bit (See Write Operation Status section.) at which time the device returns to the read mode and addresses are no longer latched. (See Table 6, Hardware Sequence Flags.) Therefore, the device requires that a valid address to the device be supplied by the system at this particular instance of time. Hence, Data Polling must be performed at the memory location which is being programmed. Any commands written to the chip during this period will be ignored. Programming is allowed in any sequence and across sector boundaries. Beware that a data “0” cannot be programmed back to a “1”. Attempting to do so may either hang up the device (Exceed timing limits.), or result in an apparent success according to the data polling algorithm but a read from reset/read mode will show that the data is still “0”. Only erase operations can convert “0”s to “1”s. Figure 13 illustrates the Embedded ProgramTM Algorithm using typical command strings and bus operations. 12 MBM29F040C-55/-70/-90 Chip Erase Chip erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the “set-up” command. Two more “unlock” write cycles are then followed by the chip erase command. Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded Erase Algorithm command sequence the device will automatically program and verify the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. The automatic erase begins on the rising edge of the last WE pulse in the command sequence and terminates when the data on DQ7 is “1” (see Write Operation Status section.) at which time the device returns to read the mode. Figure 14 illustrates the Embedded Erase Algorithm using typical command strings and bus operations. Sector Erase Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the “set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The sector address (Any address location within the desired sector.) is latched on the falling edge of WE, while the command (Data = 30H) is latched on the rising edge of WE. A time-out of 50 µs from the rising edge of the last sector erase command will initiate the sector erase command(s). Multiple sectors may be erased concurrently by writing the six bus cycle operations as described above. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must be less than 50 µs, otherwise that command will not be accepted. It is recommended that processor interrupts be disabled during this time to guarantee this condition. The interrupts can be re-enabled after the last Sector Erase command is written. A time-out of 50 µs from the rising edge of the last WE will initiate the execution of the Sector Erase command(s). If another falling edge of the WE occurs within the 50 µs time-out window the timer is reset. (Monitor DQ3 to determine if the sector erase timer window is still open, see section DQ3, Sector Erase Timer.) Any command other than Sector Erase or Erase Suspend during this time-out period will reset the device to read mode, ignoring the previous command string. Resetting the device once execution has begun will corrupt the data in the sector. In that case, restart the erase on those sectors and allow them to complete. (Refer to the Write Operation Status section for Sector Erase Timer operation.) Loading the sector erase buffer may be done in any sequence and with any number of sectors (1 to 7). Sector erase does not require the user to program the device prior to erase. The device automatically programs all memory locations in the sector(s) to be erased prior to electrical erase. When erasing a sector or sectors the remaining unselected sectors are not affected. The system is not required to provide any controls or timings during these operations. The automatic sector erase begins after the 50 µs time out from the rising edge of the WE pulse for the last sector erase command pulse and terminates when the data on DQ7 is “1” (See Write Operation Status section.) at which time the device returns to read mode. During the execution of the Sector Erase command, only the Erase Suspend and Erase Resume commands are allowed. All other commands will reset the device to read mode. Data polling must be performed at an address within any of the sectors being erased. Figure 14 illustrates the Embedded EraseTM Algorithm using typical command strings and bus operations. 13 MBM29F040C-55/-70/-90 Erase Suspend The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data reads from or programs to a sector not being erased. This command is applicable ONLY during the Sector Erase operation which include the time-out period for sector erase. The Erase Suspend command will be ignored if written during the Chip Erase operation or Embedded Program Algorithm. Writting the Erase Suspend command during the Sector Erase time-out results in immediate termination of the time-out period and suspension of the erase operation. Any other command written during the Erase Suspend mode will be ignored except the Erase Resume command. Writing the Erase Resume command resumes the erase operation. The addresses are “DON’T CARES” when writing the Erase Suspend or Erase Resume command. When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum of 10 µs to suspend the erase operation. When the devices have entered the erase-suspended mode, the DQ7 bit will be at logic “1”, and DQ6 will stop toggling. The user must use the address of the erasing sector for reading DQ6 and DQ7 to determine if the erase operation has been suspended. Further writes of the Erase Suspend command are ignored. When the erase operation has been suspended, the devices default to the erase-suspend-read mode. Reading data in this mode is the same as reading from the standard read mode except that the data must be read from sectors that have not been erase-suspended. Successively reading from the erase-suspended sector while the device is in the erase-suspend-read mode will cause DQ2 to toggle. (See the section on DQ2.) After entering the erase-suspend-read mode, the user can program the device by writing the appropriate command sequence for Program. This Program mode is known as the erase-suspend-program mode. Again, programming in this mode is the same as programming in the regular Program mode except that the data must be programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector while the devices are in the erase-suspend-program mode will cause DQ2 to toggle. The end of the erasesuspended Program operation is detected by Data polling of DQ7, or by the Toggle Bit I (DQ6) which is the same as the regular Program operation. Note that DQ7 must be read from the Program address while DQ6 can be read from any address. To resume the operation of Sector Erase, the Resume command (30H) should be written. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend command can be written after the chip has resumed erasing. 14 MBM29F040C-55/-70/-90 Write Operation Status Table 6 Status Embedded Program Algorithm Embedded Erase Algorithm In Progress Erase Suspend Read (Erase Suspended Sector) Erase Erase Suspend Read Suspended (Non-Erase Suspended Sector) Mode Erase Suspend Program Non-Erase Suspended Sector) Embedded Program Algorithm Program/Erase in Embedded Erase Algorithm Exceeded Time Limits Erase Erase Suspend Program Suspended (Non-Erase Suspended Sector) Mode Hardware Sequence Flags DQ7 DQ7 0 1 Data DQ7 DQ7 0 DQ7 DQ6 Toggle Toggle 1 Data Toggle (Note 1) Toggle Toggle Toggle DQ5 0 0 0 Data 0 1 1 1 DQ3 0 1 0 Data 0 0 1 0 DQ2 1 Toggle Toggle Data 1 (Note 2) 1 N/A N/A Notes: 1. Performing successive read operations from any address will cause DQ6 to toggle. 2. Reading the byte address being programmed while in the erase-suspend program mode will indicate logic “1” at the DQ2 bit. However, successive reads from the erase-suspended sector will cause DQ2 to toggle. 3. DQ0 and DQ1 are reserve pins for future use. DQ4 is for Fujitsu internal use only. DQ7 Data Polling The MBM29F040C device features Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm an attempt to read the device will produce the compliment of the data last written to DQ7. Upon completion of the Embedded Program Algorithm, an attempt to read the device will produce the true data last written to DQ7. During the Embedded Erase Algorithm, an attempt to read the device will produce a “0” at the DQ7 output. Upon completion of the Embedded Erase Algorithm an attempt to read the device will produce a “1” at the DQ7 output. The flowchart for Data Polling (DQ7) is shown in Figure 15. For chip erase, and sector erase the Data Polling is valid after the rising edge of the sixth WE pulse in the six write pulse sequence. For sector erase, the Data Polling is valid after the last rising edge of the sector erase WE pulse. Data Polling must be performed at sector address within any of the sectors being erased and not a protected sector. Otherwise, the status may not be valid. Once the Embedded Algorithm operation is close to being completed, the MBM29F040C data pins (DQ7) may change asynchronously while the output enable (OE) is asserted low. This means that the device is driving status information on DQ7 at one instant of time and then that byte’s valid data at the next instant of time. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the Embedded Algorithm operation and DQ7 has a valid data, the data outputs on DQ0 to DQ6 may be still invalid. The valid data on DQ0 to DQ7 will be read on the successive read attempts. The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase Algorithm, or sector erase time-out. (See Table 6.) See Figure 9 for the Data Polling timing specifications and diagrams. 15 MBM29F040C-55/-70/-90 DQ6 Toggle Bit I The MBM29F040C also features the “Toggle Bit I” as a method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the device will result in DQ6 toggling between one and zero. Once the Embedded Program or Erase Algorithm cycle is completed, DQ6 will stop toggling and valid data will be read on the next successive attempts. During programming, the Toggle Bit I is valid after the rising edge of the fourth WE pulse in the four write pulse sequence. For chip erase and sector erase, the Toggle Bit I is valid after the rising edge of the sixth WE pulse in the six write pulse sequence. The Toggle Bit I is active during the sector time out. In programming, if the sector being written to is protected, the toggle bit will toggle for about 2 µs and then stop toggling without the data having changed. In erase, the device will erase all the selected sectors except for the ones that are protected. If all selected sectors are protected, the chip will toggle the toggle bit for about 100 µs and then drop back into read mode, having changed none of the data. Either CE or OE toggling will cause the DQ6 to toggle. In addition, an Erase Suspend/Resume command will cause the DQ6 to toggle. See Figure 10 for the Toggle Bit timing specifications and diagrams. DQ5 Exceeded Timing Limits DQ5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under these conditions DQ5 will produce a “1”. This is a failure condition which indicates that the program or erase cycle was not successfully completed. Data Polling DQ7, DQ6 is the only operating function of the device under this condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA). The OE and WE pins will control the output disable functions as described in Table 2. The DQ5 failure condition may also appear if a user tries to program a non blank location without erasing. In this case the device locks out and never completes the Embedded Algorithm operation. Hence, the system never reads a valid data on DQ7 bit and DQ6 never stops toggling. Once the device has exceeded timing limits, the DQ5 bit will indicate a “1.” Please note that this is not a device failure condition since the device was incorrectly used. If this occurs, reset the device with command sequence. DQ3 Sector Erase Timer After the completion of the initial sector erase command sequence the sector erase time-out will begin. DQ3 will remain low until the time-out is complete. Data Polling and Toggle Bit I are valid after the initial sector erase command sequence. If Data Polling or the Toggle Bit I indicates the device has been written with a valid erase command. DQ3 may be used to determine if the sector erase timer window is still open. If DQ3 is high (“1”) the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by Data Polling or Toggle Bit I. If DQ3 is low (“0”), the device will accept additional sector erase commands. To insure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 were high on the second status check, the command may not have been accepted. Refer to Table 6: Hardware Sequence Flags. 16 MBM29F040C-55/-70/-90 DQ2 Toggle Bit II This Toggle Bit II, along with DQ6, can be used to determine whether the devices are in the Embedded Erase Algorithm or in Erase Suspend. Successive reads from the erasing sector will cause DQ2 to toggle during the Embedded Erase Algorithm. If the devices are in the erase-suspended-read mode, successive reads from the erase-suspended sector will cause DQ2 to toggle. When the devices are in the erase-suspended-program mode, successive reads from the byte address of the non-erase suspended sector will indicate a logic “1” at the DQ2 bit. DQ6 is different from DQ2 in that DQ6 toggles only when the standard program or Erase, or Erase Suspend Program operation is in progress. The behavior of these two status bits, along with that of DQ7, is summarized as follows: Mode Program Erase Erase Suspend Read (Erase-Suspended Sector) (Note 1) Erase Suspend Program DQ7 DQ7 0 1 DQ7 (Note 2) DQ6 toggles toggles 1 toggles DQ2 1 toggles toggles 1 (Note 2) Notes: 1. These status flags apply when outputs are read from a sector that has been erase-suspended. 2. These status flags apply when outputs are read from the byte address of the non-erase suspended sector. Data Protection The MBM29F040C is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transitions. During power up the device automatically resets the internal state machine in the Read mode. Also, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command sequences. The device also incorporates several features to prevent inadvertent write cycles resulting form VCC power-up and power-down transitions or system noise. Low VCC Write Inhibit To avoid initiation of a write cycle during VCC power-up and power-down, a write cycle is locked out for VCC less than 3.2 V (typically 3.7 V). If VCC < VLKO, the command register is disabled and all internal program/erase circuits are disabled. Under this condition the device will reset to the read mode. Subsequent writes will be ignored until the VCC level is greater than VLKO. Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE, CE, or WE will not initiate a write cycle. Logical Inhibit Writing is inhibited by holding any one of OE = VIL, CE = VIH, or WE = VIH. To initiate a write cycle CE and WE must be a logical zero while OE is a logical one. 17 MBM29F040C-55/-70/-90 Power-Up Write Inhibit Power-up of the device with WE = CE = VIL and OE = VIH will not accept commands on the rising edge of WE. The internal state machine is automatically reset to the read mode on power-up. 18 MBM29F040C-55/-70/-90 s ABSOLUTE MAXIMUM RATINGS Storage Temperature .................................................................................... –55°C to +125°C Ambient Temperature with Power Applied .................................................... –40°C to +85°C Voltage with Respect to Ground All pins except A9, OE (Note 1).................. –2.0 V to +7.0 V VCC (Note 1) .................................................................................................. –2.0 V to +7.0 V A9, OE (Note 2) ............................................................................................. –2.0 V to +13.5 V Notes: 1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may negative overshoot VSS to –2.0 V for periods of up to 20 ns. Maximum DC voltage on output and I/O pins is VCC +0.5 V. During voltage transitions, outputs may positive overshoot to VCC +2.0 V for periods of up to 20 ns. 2. Minimum DC input voltage on A9 and OE pins are –0.5 V. During voltage transitions, A9 and OE pins may negative overshoot VSS to –2.0 V for periods of up to 20 ns. Maximum DC input voltage on A9 and OE pins are +13.5 V which may overshoot to 14.0 V for periods of up to 20 ns. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. s RECOMMENDED OPERATING RANGES Ambient Temperature (TA) ................................................................................ –40°C to +85°C VCC Supply Voltages MBM29F040C-55.......................................................................................... +4.75 V to +5.25 V MBM29F040C-70/-90 ................................................................................... +4.50 V to +5.50 V Operating ranges define those limits between which the functionality of the device is guaranteed. WARNING: The recommended operating conditions are required in order to ensure normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. 19 MBM29F040C-55/-70/-90 s MAXIMUM OVERSHOOT +0.8 V –0.5 V –2.0 V 20 ns 20 ns 20 ns Figure 1 Maximum Negative Overshoot Waveform 20 ns VCC+2.0 V VCC+0.5 V +2.0 V 20 ns 20 ns Figure 2 Maximum Positive Overshoot Waveform 1 20 ns +14.0 V +13.0 V VCC+0.5 V 20 ns 20 ns * : This waveform is applied for A9, OE. Figure 3 Maximum Positive Overshoot Waveform 2 20 MBM29F040C-55/-70/-90 s DC CHARACTERISTICS Parameter Symbol ILI ILO ILIT ICC1 ICC2 ICC3 VIL VIH VID VOL VOH1 Output High Voltage Level VOH2 VLKO Low VCC Lock-Out Voltage IOH = –100 µA — VCC–0.4 3.2 — 4.2 V V Parameter Description Input Leakage Current Output Leakage Current A9, OE Input Leakage Current VCC Active Current (Note 1) VCC Active Current (Note 2) VCC Current (Standby) VCC = VCC Max., CE = VCC±0.3 V Input Low Level Input High Level Voltage for Autoselect and Sector VCC = 5.0 V Protection (A9, OE) (Note 3, 4) Output Low Voltage Level IOL = 12.0 mA, VCC = VCC Min IOH = –2.5 mA, VCC = VCC Min — — — –0.5 2.0 11.5 — 2.4 5 0.8 VCC+0.3 12.5 0.45 — µA V V V V V Test Conditions VIN = VSS to VCC, VCC = VCC Max VOUT = VSS to VCC, VCC = VCC Max VCC = VCC Max., A9, OE = 12.0 V CE = VIL, OE = VIH CE = VIL, OE = VIH VCC = VCC Max., CE = VIH Min. — — — — — — Max. ±1.0 ±1.0 50 30 45 1 Unit µA µA µA mA mA mA Notes: 1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 6 MHz). The frequency component typically is 2 mA/MHz, with OE at VIH. 2. ICC active while Embedded Algorithm (program or erase) is in progress. 3. Applicable to sector protection function. 4. (VID – VCC) do not exceed 9 V. 21 MBM29F040C-55/-70/-90 s AC CHARACTERISTICS • Read Only Operations Characteristics Parameter Symbols JEDEC tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX Standard tRC tACC tCE tOE tDF tDF tOH Read Cycle Time Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output HIGH-Z Output Enable to Output HIGH-Z Output Hold Time From Addresses, CE or OE, Whichever Occurs First — CE = VIL OE = VIL OE = VIL — — — — Min. Max. Max. Max. Max. Max. Min. -55 -70 -90 (Note1) (Note2) (Note2) Unit 55 55 55 30 20 20 0 70 70 70 30 20 20 0 90 90 90 35 20 20 0 ns ns ns ns ns ns ns Description Test Setup Note: 1. Test Conditions: Output Load: 1 TTL gate and 30 pF Input rise and fall times: 5 ns Input pulse levels: 0.0 V to3.0 V Timing measurement reference level Input: 1.5 V Output: 1.5 V Note: 2. Test Conditions: Oput Load: 1 TTL gate and 100 pF Input rise and fall times: 5 ns Input pulse levels: 0.45 V to 2.4 V Timing measurement reference level Input: 0.8 and 2.0 V Output: 0.8 and 2.0 V 5.0 V IN3064 or Equivalent Device Under Test 6.2 kΩ CL Diodes = IN3064 or Equivalent 2.7 kΩ Note: 1.CL = 30 pF including jig capacitance 2.CL = 100 pF including jig capacitance Figure 4 Test Conditions 22 MBM29F040C-55/-70/-90 • Write/Erase/Program Operations Parameter Symbols MBM29F040C Description Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Output Enable Hold Time Read Toggle and Data Polling Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Typ. Typ. Max. Min. Min. Min. Min. Min. Max. -55 55 0 40 25 0 0 0 10 0 0 0 0 0 0 30 30 20 20 8 1 8 50 4 100 4 4 30 -70 70 0 45 30 0 0 0 10 0 0 0 0 0 0 35 35 20 20 8 1 8 50 4 100 4 4 30 -90 90 0 45 45 0 0 0 10 0 0 0 0 0 0 45 45 20 20 8 1 8 50 4 100 4 4 35 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns µs sec sec µs µs µs µs µs ns JEDEC Standard tAVAV tAVWL tWLAX tDVWH tWHDX — — tGHWL tGHEL tELWL tWLEL tWHEH tEHWH tWLWH tELEH tWHWL tEHEL tWHWH1 tWHWH2 — — — — — — tWC tAS tAH tDS tDH tOES tOEH tGHWL tGHEL tCS tWS tCH tWH tWP tCP tWPH tCPH Read Recover Time Before Write Read Recover Time Before Write CE Setup Time WE Setup Time CE Hold Time WE Hold Time Write Pulse Width CE Pulse Width Write Pulse Width High CE Pulse Width High tWHWH1 Byte Programming Operation tWHWH2 Sector Erase Operation (Note 1) tVCS tVLHT tWPP tOESP tCSP tEOE VCC Setup Time Voltage Transition Time (Notes 2) Write Pulse Width (Note 2) OE Setup Time to WE Active (Note 2) CE Setup Time to WE Active (Note 2) Delay Time from Embedded Output Enable Notes: 1. This does not include the preprogramming time. 2. This timing is only for Sector Protect operations. 23 MBM29F040C-55/-70/-90 s SWITCHING WAVEFORMS • Key to Switching Waveforms WAVEFORM INPUTS Must Be Steady May Change from H to L May Change from L to H “H” or “L” Any Change Permitted Does Not Apply OUTPUTS Will Be Steady Will Be Changing from H to L Will Be Changing from L to H Changing State Unknown Center Line is HighImpedance “Off” State tRC Addresses tACC Addresses Stable CE tOE OE tDF tOEH WE tCE High-Z tOH Output Valid High-Z Outputs Figure 5 AC Waveforms for Read Operations 24 MBM29F040C-55/-70/-90 3rd Bus Cycle Addresses 555H PA Data Polling PA tWC tAH tAS tRC CE tCH tGHWL OE tWP WE tCS tWPH tDH A0H tWHWH1 tOE PD DQ7 DOUT DOUT tDF Data tDS tOH 5.0V tCE Notes: 1. PA is address of the memory location to be programmed. 2. PD is data to be programmed at byte address. 3. DQ7 is the output of the complement of the data written to the device. 4. DOUT is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence. Figure 6 AC Waveforms for Alternate WE Controlled Program Operations 25 MBM29F040C-55/-70/-90 3rd Bus Cycle Data Polling PA PA Addresses 555H tWC tAH tAS WE tWH tGHEL OE tCP CE tWS tCPH tDH Data A0H PD tWHWH1 DQ7 DOUT tDS 5.0V Notes: 1. PA is address of the memory location to be programmed. 2. PD is data to be programmed at byte address. 3. DQ7 is the output of the complement of the data written to the device. 4. DOUT is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence. Figure 7 AC Waveforms for Alternate CE Controlled Program Operations 26 MBM29F040C-55/-70/-90 tAH Addresses 555H 2AAH 555H 555H 2AAH SA* tAS CE tCH tGHWL OE tWP WE tCS tWPH tDH Data AAH 55H 80H AAH 55H 10H/30H tDS V CC tVCS * : SA is the sector address for Sector Erase. Addresses = 555H for Chip Erase Figure 8 AC Waveforms Chip/Sector Erase Operations 27 MBM29F040C-55/-70/-90 CE tCH t DF tOE OE tOEH WE tCE * DQ7 Data DQ7 DQ7 = Valid Data High-Z tWHWH1 or 2 DQ0 to DQ6 Data DQ0 to DQ6 = Output Flag DQ0 to DQ6 Valid Data High-Z tEOE * : DQ7 = Valid Data (The device has completed the Embedded operation.) Figure 9 AC Waveforms for Data Polling during Embedded Algorithm Operations CE tOEH WE tOES OE * DQ6 Data DQ6 = Toggle DQ6 = Toggle DQ6 = Stop Toggling DQ0 to DQ7 Valid tOE * : DQ6 stops toggling (The device has completed the Embedded operation). Figure 10 AC Waveforms for Toggle Bit I during Embedded Algorithm Operations 28 MBM29F040C-55/-70/-90 A18 A17 A16 A0 SAX SAY A1 A2 to A5 A7 to A18 A6 VID 5V A9 VID 5V OE tVLHT tWPP WE tOESP tCSP CE tVLHT tVLHT tVLHT Data tVCS VCC tOE 01H SAX : Sector Address for initial sector SAY : Sector Address for next sector Figure 11 AC Waveforms for Sector Protection Timing Diagram 29 MBM29F040C-55/-70/-90 Enter Embedded Erasing WE Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Program Erase Resume Erase Suspend Read Erase Erase Complete Erase Suspend Read DQ6 DQ2 Toggle DQ2 and DQ6 with OE Note: DQ2 is read from the erase-suspended sector. Figure 12 DQ2 vs. DQ6 30 MBM29F040C-55/-70/-90 EMBEDDED ALGORITHMS Start Write Program Command Sequence (See below) Data Polling Device Increment Address No Last Address ? Yes Programming Completed Program Command Sequence (Address/Command) 555H/AAH 2AAH/55H 555H/A0H Program Address/Program Data Figure 13 Embedded ProgramTM Algorithm 31 MBM29F040C-55/-70/-90 EMBEDDED ALGORITHMS Start Write Erase Command Sequece (See below) Data Polling or Toggle Bit Successfully Completed Erasure Completed Individual Sector/Multiple Sector Erase Command Sequence (Address/Command): 555H/AAH Chip Erase Command Sequence (Address/Command): 555H/AAH 2AAH/55H 2AAH/55H 555H/80H 555H/80H 555H/AAH 555H/AAH 2AAH/55H 2AAH/55H 555H/10H Sector Address/30H Sector Address/30H Additional sector erase commands are optional. Sector Address/30H Figure 4 Embedded EraseTM Algorithm 32 MBM29F040C-55/-70/-90 Start Read Byte (DQ0 to DQ7) Addr. = VA DQ7 = Data ? No No DQ5 = 1? Yes Read Byte (DQ0 to DQ7) Addr. = VA Yes VA = Byte address for programming = Any of the sector addresses within the sector being erased during sector erase or multiple sector erases operation. = Any of the sector addresses within the sector not being protected during sector erase or multiple sector erases operation. DQ7 = Data ? No Fail Yes Pass Note: DQ7 is rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 5 Data Polling Algorithm 33 MBM29F040C-55/-70/-90 Start Read Byte (DQ0 to DQ7) Addr. = “H” or “L” DQ6 = Toggle ? Yes No DQ5 = 1? Yes Read Byte (DQ0 to DQ7) Addr. = “H” or “L” No DQ6 = Toggle ? Yes Fail No Pass Note: DQ6 is rechecked even if DQ5 = “1” because DQ6 may stop toggling at the same time as DQ5 changing to “1”. Figure 6 Toggle Bit Algorithm 34 MBM29F040C-55/-70/-90 Start Setup Sector Addr. (A18, A17, A16) PLSCNT = 1 OE = VID, A9 = VID, CE = VIL Activate WE Pulse Increment PLSCNT Time out 100 µs WE = VIH, CE = OE = VIL (A9 should remain VID) Read from Sector Addr. = SA, A0 = 0, A1 = 1, A6 = 0 No PLSCNT = 25? Yes Remove VID from A9 Write Reset Command No Data = 01H? Yes Protect Another Sector ? No Device Failed Remove VID from A9 Write Reset Command Yes Sector Protection Completed Figure 7 Sector Protection Algorithm 35 MBM29F040C-55/-70/-90 s ERASE AND PROGRAMMING PERFORMANCE Limits Parameter Min. Sector Erase Time Byte Programming Time Chip Programming Time Erase/Program Cycle — — — 100,000 Typ. 1 8 4.2 — Max. 8 150 10 — sec µs sec cycles Excludes 00H programming prior to erasure Excludes system-level overhead Excludes system-level overhead Unit Comments s TSOP(I) PIN CAPACITANCE Parameter Symbol CIN COUT CIN2 Parameter Description Input Capacitance Output Capacitance Control Pin Capacitance Test Setup VIN = 0 VOUT = 0 VIN = 0 Typ. 7 8 8.5 Max. 8 10 10 Unit pF pF pF Note: Test conditions TA = 25°C, f = 1.0 MHz s PLCC PIN CAPACITANCE Parameter Symbol CIN COUT CIN2 Parameter Description Input Capacitance Output Capacitance Control Pin Capacitance Test Setup VIN = 0 VOUT = 0 VIN = 0 Typ. 7 8 8.5 Max. 8 10 10 Unit pF pF pF Note: Test conditions TA = 25°C, f = 1.0 MHz 36 MBM29F040C-55/-70/-90 s PACKAGE DIMENSIONS 32-pin plastic QFJ(PLCC) (LCC-32P-M02) 12.37±0.13 (.487±.005) 11.43±0.08 (.450±.003) 4 1 32 30 3.40±0.16 (.134±.006) 2.25±0.38 (.089±.015) 0.64(.025) MIN 7.62(.300)REF 1.27±0.13 (.050±.005) 5 29 INDEX 13.97±0.08 14.94±0.13 (.550±.003) (.588±.005) 12.95±0.51 (.510±.020) 10.16(.400) REF 13 21 14 20 R0.95(.037) TYP 0.66(.026) TYP 0.20 –0.02 +.002 .008 –.001 0.43(.017) TYP 10.41±0.51 (.410±.020) +0.05 0.10(.004) C 1994 FUJITSU LIMITED C32021S-2C-4 Dimensions in mm(inches) (Continued) 37 MBM29F040C-55/-70/-90 32-pin plastic TSOP(I) (FPT-32P-M24) LEAD No. 1 32 Details of "A" part 0.15(.006) MAX 0.35(.014) MAX INDEX "A" 16 17 0.15(.006) 0.25(.010) 0.15±0.05 (.006±.002) 20.00±0.20 (.787±.008) 18.40±0.20 (.724±.008) 0.50(.0197) TYP 0.50±0.10 (.020±.004) 8.00±0.20 (.315±.008) 0.05(.002)MIN (STAND OFF) 1.10 –0.05 .043 –.002 (Mounting Height) +0.10 +.004 0.10(.004) 19.00±0.20 (.748±.008) 7.50(.295) REF. 0.20±0.10 (.008±.004) 0.10(.004) M C 1994 FUJITSU LIMITED F32035S-2C-1 Dimensions in mm(inches) (Continued) 38 MBM29F040C-55/-70/-90 (Continued) 32-pin plastic TSOP(I) (FPT-32P-M25) LEAD No. 1 32 Details of "A" part 0.15(.006) MAX 0.35(.014) MAX INDEX "A" 16 17 0.15(.006) 0.25(.010) 0.20±0.10 (.008±.004) 0.15±0.05 (.006±.002) 19.00±0.20 (.748±.008) 0.10(.004) 0.50±0.10 (.020±.004) 0.50(.0197) TYP 7.50(.295) REF. 0.10(.004) M 0.05(.002)MIN (STAND OFF) 18.40±0.20 (.724±.008) 20.00±0.20 (.787±.008) 1.10 −0.05 .043 −.002 8.00±0.20 (.315±.008) (Mounting Height) +0.10 +.004 C 1997 FUJITSU LIMITED F32036S-2C-2 Dimensions in mm(inches) 39 MBM29F040C-55/-70/-90 FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that Fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan. F9903 © FUJITSU LIMITED Printed in Japan