MBM29F800BA-55PFTR

SPANSION Flash Memory Data Sheet TM September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a SPANSION revisions will occur when appropriate, and changes will be noted in a revision summary. TM product. Future routine Continuity of Ordering Part Numbers AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these products, please use only the Ordering Part Numbers listed in this document. For More Information Please contact your local AMD or Fujitsu sales office for additional information about SPANSION solutions. TM memory FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-6E FLASH MEMORY CMOS 8M (1M × 8/512K × 16) BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s GENERAL DESCRIPTION The MBM29F800TA/BA is a 8M-bit, 5.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29F800TA/BA is offered in a 48-pin TSOP(1) and 44-pin SOP packages. This device is designed to be programmed in-system with the standard system 5.0 V VCC supply. 12.0 V VPP is not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. The standard MBM29LV800TA/BA offers access times 55 ns and 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. (Continued) s PRODUCT LINE UP Part No. Ordering Part No. VCC = 5.0 V ± 5 % VCC = 5.0 V ± 10 % -55 — 55 55 30 MBM29F800TA/MBM29F800BA — -70 70 70 30 — -90 90 90 40 Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) s PACKAGES 48-pin, Plastic TSOP(1) Marking Side 44-pin, Plastic SOP Marking Side Marking Side (FPT-48P-M19) (FPT-48P-M20) (FPT-44P-M16) MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 (Continued) The MBM29F800TA/BA is pin and command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the devices is similar to reading from12.0 V Flash or EPROM devices. The MBM29F800TA/BA is programmed by executing the program command sequence. This will invoke the Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Typically, each sector can be programmed and verified in less than 0.5 seconds. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. Any individual sector is typically erased and verified in 1.0 second (if already completely preprogrammed.). The devices also features a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29F800TA/BA is erased when shipped from the factory. The devices features single 5.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7, by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been completed, the device internally resets to the read mode. Fujitsu’s Flash technology combines years of EPROM and E2PROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The MBM29F800TA/BA memory electrically erase the entire chip or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM programming mechanism of hot electron injection. 2 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(1) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 44-pin SOP (Package suffix: PF) • Minimum 100,000 write/erase cycles • High performance 55 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase. • Boot Code Sector Architecture T = Top sector B = Bottom sector • Embedded EraseTM* Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM* Algorithms Automatically writes and verifies data at specified address • Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion • Low Vcc write inhibit ≤ 3.2 V • Erase Suspend/Resume Suspends the erase operation to allow a read data in another sector within the same device • Hardware RESET pin Resets internal state machine to the read mode • Sector protection Hardware method disables any combination of sectors from write or erase operations • Temporary sector unprotection Temporary sector unprotection via the RESET pin. * : Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. 3 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s PIN ASSIGNMENT TSOP(1) A15 A14 A13 A12 A11 A10 A9 A8 N.C. N.C. WE RESET N.C. N.C. RY/BY A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 SOP (Top View) 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE VSS CE A0 RY/BY A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE VSS OE 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 A0 CE VSS OE DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 VCC DQ4 DQ12 DQ5 DQ13 DQ6 DQ14 DQ7 DQ15/A-1 VSS BYTE A16 DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 RESET WE A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC (Marking Side) MBM29F800TA/MBM29F800BA Normal Bend FPT-48P-M19 A1 A2 A3 A4 A5 A6 A7 A17 A18 RY/BY N.C. N.C. RESET WE N.C. N.C. A8 A9 A10 A11 A12 A13 A14 A15 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 (Marking Side) MBM29F800TA/MBM29F800BA Reverse Bend FPT-44P-M16 FPT-48P-M20 4 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s PIN DESCRIPTION Pin name A18 to A0, A-1 DQ15 to DQ0 CE OE WE RY/BY RESET BYTE N.C. VSS VCC Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Ready/Busy Output Hardware Reset Pin/Temporary Sector Unprotection Selects 8-bit or 16-bit mode No Internal Connection Device Ground Device Power Supply Function 5 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s BLOCK DIAGRAM RY/BY Buffer VCC VSS DQ15 to DQ0 RY/BY Erase Voltage Generator Input/Output Buffers WE BYTE RESET State Control Command Register Program Voltage Generator CE OE Chip Enable Output Enable Logic STB Data Latch STB Y-Decoder Y-Gating Low VCC Detector Timer for Program/Erase Address Latch X-Decoder Cell Matrix A18 to A0 A-1 s LOGIC SYMBOL A-1 19 A18 to A0 DQ15 to DQ0 CE OE WE RESET BYTE RY/BY 16 or 8 6 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s DEVICE BUS OPERATION MBM29F800TA/BA User Bus Operation (BYTE = VIH) Operation Auto-Select Manufacturer Code*1 Auto-Select Device Code*1 Read*3 Standby Output Disable Write Enable Sector Protection*2 Verify Sector Protection*2 Temporary Sector Unprotection Reset (Hardware)/Standby Legend: L = VIL, H = VIH, X = VIL or VIH, CE L L L H L L L L X X OE L L L X H H VID L X X H X X WE H H H X H L A0 L H A0 X X A0 X L X X A1 L L A1 X X A1 X H X X A6 L L A6 X X A6 L L X X A9 VID VID A9 X X A9 VID VID X X DQ15 to DQ0 RESET Code Code DOUT High-Z High-Z DIN X Code X High-Z H H H H H H H H VID L = Pulse input. See DC Characteristics for voltage levels. *1 : Manufacturer and device codes may also be accessed via a command register write sequence. See MBM29F800TA/BA Command Definitions” in s DEVICE BUS OPERATION. *2 : Refer to the section on Sector Protection. *3 : WE can be VIL if OE is VIL, OE at VIH initiates the write operations. MBM29F800TA/BA User Bus Operation (BYTE = VIL) Operation Auto-Select Manufacturer Code *1 Auto-Select Device Code *1 Read *3 Standby Output Disable Write (Program/Erase) Enable Sector Protection *2 Verify Sector Protection *2 Temporary Sector Unprotection Reset (Hardware)/Standby Legend: L = VIL, H = VIH, X = VIL or VIH, CE L L L H L L L L X X OE L L L X H H VID L X X H X X 15 WE DQ-1 /A A0 L H A0 X X A0 X L X X A1 L L A1 X X A1 H H X X A6 L L A6 X X A6 L L X X A9 VID VID A9 X X A9 VID VID X X DQ7 to DQ0 RESET H H H H H H H H VID L H H H X H L L L A-1 X X A-1 X L X X Code Code DOUT High-Z High-Z DIN X Code X High-Z = Pulse input. See DC Characteristics for voltage levels. * 1 : Manufacturer and device codes may also be accessed via a command register write sequence. See MBM29F800TA/BA Command Definitions” in s DEVICE BUS OPERATION. *2 : Refer to the section on Sector Protection. *3 : WE can be VIL if OE is VIL, OE at VIH initiates the write operations. 7 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 MBM29F800TA/BA Command Definitions Command Sequence Read/ Reset*1 Read/ Reset*1 Autoselect Byte/Word Program Chip Erase Sector Erase Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte Bus Write Cycles Req'd Second First Bus Third Bus Fourth Bus Fifth Bus Sixth Bus Bus Write Cycle Write Cycle Write Cycle Read/Write Write Cycle Write Cycle Cycle Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data XXXh F0h 555h AAAh 555h AAAh 555h AAAh 555h AAAh 555h AAAh AAh AAh AAh AAh AAh — 2AAh 555h 2AAh 555h 2AAh 555h 2AAh 555h 2AAh 555h — 55h 55h 55h 55h 55h — 555h AAAh 555h AAAh 555h AAAh 555h AAAh 555h AAAh — F0h 90h A0h 80h 80h — — — — — — 2AAh 555h 2AAh 555h — — — — 55h 55h — — — — 555h AAAh SA — — — — 10h 30h 1 3 3 4 6 6 RA*2 RD*2 IA*2 PA 555h AAAh 555h AAAh ID*2 PD AAh AAh Sector Erase Suspend Sector Erase Resume Erase can be suspended during sector erase with Addr (“H” or “L”). Data (B0h) Erase can be resumed after suspend with Addr (“H” or “L”). Data (30h) Notes : • Address bits A11 to A18 = X = “H” or “L” for all address commands except or Program Address (PA) and Sector Address (SA). • Bus operations are defined in “MBM29F800TA/BA User Bus Operation (BYTE = VIH)” and “MBM29F800TA/BA User Bus Operation (BYTE = VIH)” in sDEVICE BUS OPERATION. • RA = Address of the memory location to be read. IA = Autoselect read address. PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse. SA = Address of the sector to be erased. The combination of A18, A17, A16, A15, A14, A13, and A12 will uniquely select any sector. • RD = Data read from location RA during read operation. ID = Device code/manufacture code for the address located by IA. PD = Data to be programmed at location PA. Data is latched on the rising edge of WE. • The system should generate the following address patterns: Word Mode: 555h or 2AAh to addresses A10 to A0 Byte Mode: AAAh or 555h to addresses A10 to A-1 • Both Read/Reset commands are functionally equivalent, resetting the device to the read mode. • Command combinations not described in Command Definitions table are illegal. *1 : Both of these reset commands are equivalent. *2 : The fourth bus cycle is only for read. 8 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 MBM29F800TA/BA Sector Protection Verify Autoselect Codes Type Byte Manufacture’s Code Word Byte MBM29F800TA Word Device Code Byte MBM29F800BA Word Sector Protection Sector Addresses Word Byte VIL VIH VIL X 0001h*2 X VIL VIL VIH X VIL 2258h 01h*2 VIL 58h X VIL VIL VIH X 22D6h X VIL VIL VIL X VIL 0004h D6h A18 to A12 A6 A1 A0 A-1*1 VIL Code (HEX) 04h *1 : A-1 is for Byte mode. At Byte mode, DQ14 to DQ8 are High-Z and DQ15 is A-1, the lowest address. *2 : Outputs 01h at protected sector addresses and outputs 00h at unprotected sector addresses. Expanded Autoselect Code Table Type (B)* Manufacture’s Code (W) 0004h 0 (B)* MBM29F800TA Code DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0 04h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 0 0 1 1 0 0 1 1 1 1 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 0 0 0 1 1 D6h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 1 22D6h Device Code MBM29F800BA (W) (B)* 0 0 1 0 0 0 1 0 1 58h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0 0 1 0 0 0 1 0 0 (W) 2258h 0 (B)* Sector Protection (W) 0001h 0 (B) : Byte mode (W) : Word mode HI-Z : High-Z 01h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0 0 0 0 0 0 0 0 0 * : At Byte mode, DQ14 to DQ8 are High-Z and DQ15 is A−1, the lowest address. 9 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s FLEXIBLE SECTOR-ERASE ARCHITECTURE • One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes. • Individual-sector, multiple-sector, or bulk-erase capability. • Individual or multiple-sector protection is user definable. (×8) FFFFFh 16K byte FBFFFh 8K byte F9FFFh 8K byte F7FFFh 32K byte EFFFFh 64K byte DFFFFh 64K byte CFFFFh 64K byte BFFFFh 64K byte AFFFFh 64K byte 9FFFFh 64K byte 8FFFFh 64K byte 7FFFFh 64K byte 6FFFFh 64K byte 5FFFFh 64K byte 4FFFFh 64K byte 3FFFFh 64K byte 2FFFFh 64K byte 1FFFFh 64K byte 0FFFFh 64K byte 00000h MBM29F800TA Sector Architecture (×16) 7FFFFh 64K byte 7DFFFh 64K byte 7CFFFh 64K byte 7BFFFh 64K byte 77FFFh 64K byte 6FFFFh 64K byte 67FFFh 64K byte 5FFFFh 64K byte 57FFFh 64K byte 4FFFFh 64K byte 47FFFh 64K byte 3FFFFh 64K byte 37FFFh 64K byte 2FFFFh 64K byte 27FFFh 64K byte 1FFFFh 32K byte 17FFFh 8K byte 0FFFFh 8K byte 07FFFh 16K byte 00000h (×8) FFFFFh EFFFFh (×16) 7FFFFh 77FFFh DFFFFh 6FFFFh CFFFFh 67FFFh BFFFFh AFFFFh 9FFFFh 8FFFFh 7FFFFh 6FFFFh 5FFFFh 4FFFFh 3FFFFh 2FFFFh 1FFFFh 0FFFFh 07FFFh 05FFFh 03FFFh 00000h MBM29F800BA Sector Architecture 5FFFFh 57FFFh 4FFFFh 47FFFh 3FFFFh 37FFFh 2FFFFh 27FFFh 1FFFFh 17FFFh 0FFFFh 07FFFh 03FFFh 02FFFh 01FFFh 00000h 10 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 Sector Address Table (MBM29F800TA) Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 A18 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 A17 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 1 1 1 A16 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 1 1 A15 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 1 1 1 A14 X X X X X X X X X X X X X X X 0 1 1 1 A13 X X X X X X X X X X X X X X X X 0 0 1 A12 X X X X X X X X X X X X X X X X 0 1 X Address Range 00000h to 0FFFFh 10000h to 1FFFFh 20000h to 2FFFFh 30000h to 3FFFFh 40000h to 4FFFFh 50000h to 5FFFFh 60000h to 6FFFFh 70000h to 7FFFFh 80000h to 8FFFFh 90000h to 9FFFFh A0000h to AFFFFh B0000h to BFFFFh C0000h to CFFFFh D0000h to DFFFFh E0000h to EFFFFh F0000h to F7FFFh F8000h to F9FFFh FA000h to FBFFFh FC000h to FFFFFh 11 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 Sector Address Table (MBM29F800BA) Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 A18 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 A17 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 A16 0 0 0 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 A15 0 0 0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 A14 0 0 0 1 X X X X X X X X X X X X X X X A13 0 1 1 X X X X X X X X X X X X X X X X A12 X 0 1 X X X X X X X X X X X X X X X X Address Range 00000h to 03FFFh 04000h to 05FFFh 06000h to 07FFFh 08000h to 0FFFFh 10000h to 1FFFFh 20000h to 2FFFFh 30000h to 3FFFFh 40000h to 4FFFFh 50000h to 5FFFFh 60000h to 6FFFFh 70000h to 7FFFFh 80000h to 8FFFFh 90000h to 9FFFFh A0000h to AFFFFh B0000h to BFFFFh C0000h to CFFFFh D0000h to DFFFFh E0000h to EFFFFh F0000h to FFFFFh 12 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s FUNCTIONAL DESCRIPTION Read Mode The MBM29F800TA/BA has two control functions which must be satisfied in order to obtain data at the outputs. CE is the power control and should be used for a device selection. OE is the output control and should be used to gate data to the output pins if a device is selected. Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable access time (tCE) is the delay from stable addresses and stable CE to valid data at the output pins. The output enable access time is the delay from the falling edge of OE to valid data at the output pins (Assuming the addresses have been stable for at least tACC - tCE time). Standby Mode There are two ways to implement the standby mode on the MBM29F800TA/BA devices, one using both the CE and RESET pins; the other via the RESET pin only. When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at VCC ± 0.3 V. Under this condition the current consumed is less than 5 µA. A TTL standby mode is achieved with CE and RESET pins held at VIH. Under this condition the current is reduced to approximately 1mA. During Embedded Algorithm operation, VCC Active current (ICC2) is required even CE = VIH. The device can be read with standard access time (tCE) from either of these standby modes. When using the RESET pin only, a CMOS standby mode is achieved with RESET input held at VSS ± 0.3 V (CE = “H” or “L”). Under this condition the current is consumed is less than 5 µA. A TTL standby mode is achieved with RESET pin held at VIL, (CE= “H” or “L”). Under this condition the current required is reduced to approximately 1 mA. Once the RESET pin is taken high, the device requires 500 ns of wake up time before outputs are valid for read access. In the standby mode the outputs are in the high impedance state, independent of the OE input. Output Disable With the OE input at a logic high level (VIH), output from the device is disabled. This will cause the output pins to be in a high impedance state. Autoselect The autoselect mode allows the reading out of a binary code from the device and will identify its manufacturer and type. This mode is intended for use by programming equipment for the purpose of automatically matching the devices to be programmed with its corresponding programming algorithm. This mode is functional over the entire temperature range of the device. To activate this mode, the programming equipment must force VID (11.5 V to 12.5 V) on address pin A9. Two identifier bytes may then be sequenced from the devices outputs by toggling address A0 from VIL to VIH. All addresses are don't cares except A0, A1, A6, and A-1 (See “MBM29F800TA/BA Sector Protection Verify Autoselect Codes” in s DEVICE BUS OPERATION). The manufacturer and device codes may also be read via the command register, for instances when the MBM29F800TA/BA is erased or programmed in a system without access to high voltage on the A9 pin. The command sequence is illustrated in “MBM29F800TA/BA Command Definitions” in s DEVICE BUS OPERATION (refer to “Autoselect Command” in s COMMAND DEFINITIONS). Byte 0 (A0 = VIL) represents the manufacturer’s code (Fujitsu = 04h) and A0 = VIH represents the device identifier code (MBM29F800TA = D6h and MBM29F800BA = 58h for ×8 mode; MBM29F800TA = 22D6h and MBM29F800BA = 2258h for ×16 mode). These two bytes/words are given in “MBM29F800TA/BA Sector Protection Verify Autoselect Codes” and “Expanded Autoselect Code Table” in s DEVICE BUS OPERATION. All identifiers for manufacturers and device will exhibit odd parity with DQ7 defined as the parity bit. In order to read the proper device codes when executing the autoselect, A1 must be VIL (See “MBM29F800TA/BA Sector Protection Verify Autoselect Codes” and “Expanded Autoselect Code Table” in s DEVICE BUS OPERATION). 13 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 Write Device erasure and programming are accomplished via the command register. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The command register is written by bringing WE to VIL, while CE is at VIL and OE is at VIH. Addresses are latched on the falling edge of WE or CE, whichever happens later; while data is latched on the rising edge of WE or CE, whichever happens first. Standard microprocessor write timings are used. Refer to “s AC CHARACTERISTICDS” and “s TIMING DIAGRAM” for specific timing parameters. Sector Protection The MBM29F800TA/BA features hardware sector protection. This feature will disable both program and erase operations in any number of sectors (0 through 18). The sector protection feature is enabled using programming equipment at the user’s site. The device is shipped with all sectors unprotected. To activate this mode, the programming equipment must force VID on address pin A9 and control pin OE, (suggest VID = 11.5V), CE = VIL, and A6 = VIL. The sector addresses (A18, A17, A16, A15, A14, A13, and A12) should be set to the sector to be protected. “Sector Address Tables (MBM29F800TA)” and “Sector Address Tables (MBM29F800BA)” in s FLEXIBLE SECTOR ERASE ARCHITECTURE define the sector address for each of the nineteen (19) individual sectors. Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Sector addresses must be held constant during the WE pulse. See “Sector Protection Timing Diagram” in s TIMING DIAGRAM and “Sector Protection Algorithm” in s FLOW CHART for sector protection waveforms and algorithm. To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9 with CE and OE at VIL and WE at VIH. Scanning the sector addresses (A18, A17, A16, A15, A14, A13, and A12) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” code at device output DQ0 for a protected sector. Otherwise the devices will read 00h for unprotected sector. In this mode, the lower order addresses, except for A0, A1, and A6 are DON’T CARES. Address locations with A1 = VIL are reserved for Autoselect manufacturer and device codes. A-1 requires to apply to VIL on byte mode. It is also possible to determine if a sector is protected in the system by writing an Autoselect command. Performing a read operation at the address location XX02h, where the higher order addresses (A18, A17, A16, A15, A14, A13, and A12) are the desired sector address will produce a logical “1” at DQ0 for a protected sector. See “MBM29F800TA/BA Sector Protection Verify Autoselect Codes” and “Expanded Autoselect Code Table” in s DEVICE BUS OPERATION for Autoselect codes. Temporary Sector Unprotection This feature allows temporary unprotection of previously protected sectors of the MBM29F800TA/BA device in order to change data. The Sector Unprotection mode is activated by setting the RESET pin to high voltage (12 V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once the 12 V is taken away from the RESET pin, all the previously protected sectors will be protected again. Refer to “Temporary Sector Unprotection Timing Diagram” in s TIMING DIAGRAM and “Temporary Sector Unprotection Algorithm” in s FLOW CHART. 14 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s COMMAND DEFINITIONS Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. “MBM29F800TA/BA Command Definitions” in s DEVICE BUS OPERATION defines the valid register command sequences. Note that the Erase Suspend (B0h) and Erase Resume (30h) commands are valid only while the Sector Erase operation is in progress. Moreover both Read/Reset commands are functionally equivalent, resetting the device to the read mode. Please note that commands are always written at DQ7 to DQ0 and DQ15 to DQ8 bits are ignored. Read/Reset Command The read or eset operation is initiated by writing the Read/Reset command sequence into the command register. Microprocessor read cycles retrieve array data from the memory. The devices remain enabled for reads until the command register contents are altered. The device will automatically power-up in the read/reset state. In this case, a command sequence is not required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures that no spurious alteration of the memory content occurs during the power transition. Refer to “s AC CHARACTERISTICS” and “s TIMING DIAGRAM” for the specific timing parameters. Autoselect Command Flash memories are intended for use in applications where the local CPU alters memory contents. As such, manufacture and device codes must be accessible while the devices reside in the target system. PROM programmers typically access the signature codes by raising A9 to a high voltage. However, multiplexing high voltage onto the address lines is not generally desired system design practice. The device contains an Autoselect command operation to supplement traditional PROM programming methodology. The operation is initiated by writing the Autoselect command sequence into the command register. Following the command write, a read cycle from address XX00h retrieves the manufacture code of 04h. A read cycle from address XX01h for ×16 (XX02h for ×8) returns the device code (MBM29F800TA = D6h and MBM29F800BA = 58h for ×8 mode; MBM29F800TA = 22D6h and MBM29F800BA = 2258h for ×16 mode). (See “MBM29F800TA/BA Sector Protection Verify Autoselect Codes” and “Expanded Autoselect Code Table” in s DEVICE BUS OPERATION.) All manufacturer and device codes will exhibit odd parity with DQ7 defined as the parity bit. Sector state (protection or unprotection) will be informed by address XX02h for ×16 (XX04h for ×8). Scanning the sector addresses (A18, A17, A16, A15, A14, A13, and A12) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” at device output DQ0 for a protected sector. The programming verification should be perform margin mode on the protected sector (See “MBM29F800TA/BA User Bus Operation (BYTE = VIH)” and “MBM29F800TA/ BA User Bus Operation (BYTE = VIH)” in s DEVICE BUS OPERATION). To terminate the operation, it is necessary to write the Read/Reset command sequence into the register, and also to write the Autoselect command during the operation, execute it after writing Read/Reset command sequence. Byte/Word Programming The device is programmed on a byte-by-byte (or word-by-word) basis. Programming is a four bus cycle operation. There are two “unlock” write cycles. These are followed by the program set-up command and data write cycles. Addresses are latched on the falling edge of CE or WE, whichever happens later and the data is latched on the rising edge of CE or WE, whichever happens first. The rising edge of CE or WE (whichever happens first) begins programming. Upon executing the Embedded ProgramTM Algorithm command sequence, the system is not required to provide further controls or timings. The device will automatically provide adequate internally generated program pulses and verify the programmed cell margin. The automatic programming operation is completed when the data on DQ7 is equivalent to data written to this bit at which time the devices return to the read mode and addresses are no longer latched (See “Hardware Sequence Flags”, Hardware Sequence Flags) Therefore, the devices require that a valid address to the devices 15 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 be supplied by the system at this particular instance of time. Hence, Data Polling must be performed at the memory location which is being programmed. Any commands written to the chip during this period will be ignored. If hardware reset occurs during the programming operation, it is impossible to guarantee the data are being written. Programming is allowed in any sequence and across sector boundaries. Beware that a data “0” cannot be programmed back to a “1”. Attempting to do so may either hang up the device or result in an apparent success according to the data polling algorithm but a read from Read/Reset mode will show that the data is still “0”. Only erase operations can convert “0”s to “1”s. “Embedded ProgramTM Algorithm” in s FLOW CHART illustrates the Embedded Programming AlgorithmTM using typical command strings and bus operations. Chip Erase Chip erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the “set-up” command. Two more “unlock” write cycles are then followed by the chip erase command. Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded EraseTM Algorithm command sequence the device will automatically program and verify the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. The automatic erase begins on the rising edge of the last WE pulse in the command sequence and terminates when the data on DQ7 is “1” (see Write Operation Status section) at which time the device returns to read the mode. “Embedded EraseTM Algorithm” in s FLOW CHART illustrates the Embedded Erase Algorithm using typical command strings and bus operations. Sector Erase Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the “set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The sector address (any address location within the desired sector) is latched on the falling edge of WE, while the command (Data = 30h) is latched on the rising edge of WE. After time-out of 50 µs from the rising edge of the last sector erase command, the sector erase operation will begin. Multiple sectors may be erased concurrently by writing the six bus cycle operations on “MBM29F800TA/BA Command Definitions” in s DEVICE BUS OPERATION. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must be less than 50 µs otherwise that command will not be accepted and erasure will start. It is recommended that processor interrupts be disabled during this time to guarantee this condition. The interrupts can be re-enabled after the last Sector Erase command is written. A time-out of 50 µs from the rising edge of the last WE will initiate the execution of the Sector Erase command(s). If another falling edge of the WE occurs within the 50 µs timeout window the timer is reset. (Monitor DQ3 to determine if the sector erase timer window is still open, see section DQ3, Sector Erase Timer.) Any command other than Sector Erase or Erase Suspend during this time-out period will reset the devices to the read mode, ignoring the previous command string. Resetting the device once execution has begun will corrupt the data in that sector. In that case, restart the erase on those sectors and allow them to complete. (Refer to the Write Operation Status section for Sector Erase Timer operation.) Loading the sector erase buffer may be done in any sequence and with any number of sectors (18 to 0). Sector erase does not require the user to program the devices prior to erase. The device automatically programs all memory locations in the sector(s) to be erased prior to electrical erase. When erasing a sector or sectors the remaining unselected sectors are not affected. The system is not required to provide any controls or timings during these operations. The automatic sector erase begins after the 50 µs time out from the rising edge of the WE pulse for the last sector erase command pulse and terminates when the data on DQ7 is “1” (see Write Operation Status section) 16 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 at which time the device returns to the read mode. Data polling must be performed at an address within any of the sectors being erased. “Embedded EraseTM Algorithm” in s FLOW CHART illustrates the Embedded Erase Algorithm using typical command strings and bus operations. Erase Suspend The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data reads from or programs to a sector not being erased. This command is applicable ONLY during the Sector Erase operation which includes the time-out period for sector erase. The Erase Suspend command will be ignored if written during the Chip Erase operation or Embedded Program Algorithm. Writting the Erase Suspend command during the Sector Erase time-out results in immediate termination of the time-out period and suspension of the erase operation. Writing the Erase Resume command resumes the erase operation. The addresses are “don’t cares” when writing the Erase Suspend or Erase Resume command. When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum of 20 µs to suspend the erase operation. When the device has entered the erase-suspended mode, the RY/BY output pin and the DQ7 bit will be at logic “1”, and DQ6 will stop toggling. The user must use the address of the erasing sector for reading DQ6 and DQ7 to determine if the erase operation has been suspended. Further writes of the Erase Suspend command are ignored. When the erase operation has been suspended, the device defaults to the erase-suspend-read mode. Reading data in this mode is the same as reading from the standard read mode except that the data must be read from sectors that have not been erase-suspended. Successively reading from the erase-suspended sector while the device is in the erase-suspend-read mode will cause DQ2 to toggle. (See “DQ2 Toggle Bit II”). After entering the erase-suspend-read mode, the user can program the device by writing the appropriate command sequence for Program. This Program mode is known as the erase-suspend-program mode. Again, programming in this mode is the same as programming in the regular Program mode except that the data must be programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector while the device is in the erase-suspend-program mode will cause DQ2 to toggle. The end of the erase-suspended Program operation is detected by the RY/BY output pin, Data polling of DQ7, or by the Toggle Bit I (DQ6) which is the same as the regular Program operation. Note that DQ7 must be read from the Program address while DQ6 can be read from any address. To resume the operation of Sector Erase, the Resume command (30h) should be written. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend command can be written after the chip has resumed erasing. 17 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 Write Operation Status Hardware Sequence Flags Status Embedded Program Algorithm Embedded Erase Algorithm In Progress Erase Suspend Read (Erase Suspended Sector) Erase Suspended Mode Erase Suspend Read (Non-Erase Suspended Sector) Erase Suspend Program (Non-Erase Suspended Sector) Embedded Program Algorithm Exceeded Time Limits Embedded Erase Algorithm Erase Suspended Mode Erase Suspend Program (Non-Erase Suspended Sector) DQ7 DQ7 0 1 Data DQ7 DQ7 0 DQ7 DQ6 Toggle Toggle 1 Data Toggle*1 Toggle Toggle Toggle DQ5 0 0 0 Data 0 1 1 1 DQ3 0 1 0 Data 0 0 1 0 DQ2 1 Toggle Toggle Data 1*2 1 N/A N/A *1 : Performing successive read operations from any address will cause DQ6 to toggle. *2 : Reading the byte address being programmed while in the erase-suspend program mode will indicate logic “1” at the DQ2 bit. However, successive reads from the erase-suspended sector will cause DQ2 to toggle. Notes : • DQ0 and DQ1 are reserve pins for future use. DQ4 is Fujitsu internal use only. • DQ15 to DQ8 are “DON’T CARES” because there is for × 16 mode. DQ7 Data Polling The MBM29F800TA/BA device feature Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm an attempt to read the device will produce the complement of the data last written to DQ7. Upon completion of the Embedded Program Algorithm, an attempt to read the device will produce the true data last written to DQ7. During the Embedded Erase Algorithm, an attempt to read the device will produce a “0” at the DQ7 output. Upon completion of the Embedded Erase Algorithm an attempt to read the device will produce a “1” at the DQ7 output. The flowchart for Data Polling (DQ7) is shown in “Data Polling Algorithm” in s FLOW CHART. For chip erase and sector erase, the Data Polling is valid after the rising edge of the sixth WE pulse in the six write pulse sequence. Data Polling must be performed at sector address within any of the sectors being erased and not a protected sector. Otherwise, the status may not be valid. Once the Embedded Algorithm operation is close to being completed, the MBM29F800TA/BA data pins (DQ7) may change asynchronously while the output enable (OE) is asserted low. This means that the device is driving status information on DQ7 at one instant of time and then that byte’s valid data at the next instant of time. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the Embedded Algorithm operation and DQ7 has a valid data, the data outputs on DQ6 to DQ0 may be still invalid. The valid data on DQ7 to DQ0 will be read on the successive read attempts. The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase Algorithm or sector erase time-out (See “Hardware Sequence Flags”). See “Data Polling during Embedded Algorithm Operations” in s TIMING DIAGRAM for the Data Polling timing specifications and diagrams. 18 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 DQ6 Toggle Bit I The MBM29F800TA/BA also feature the “Toggle Bit I” as a method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the device will result in DQ6 toggling between one and zero. Once the Embedded Program or Erase Algorithm cycle is completed, DQ6 will stop toggling and valid data will be read on the next successive attempts. During programming, the Toggle Bit I is valid after the rising edge of the fourth WE pulse in the four write pulse sequence. For chip erase and sector erase, the Toggle Bit I is valid after the rising edge of the sixth WE pulse in the six write pulse sequence. The Toggle Bit I is active during the sector time out. In programming, if the sector being written to is protected, the toggle bit l will toggle for about 2 µs and then stop toggling without the data having changed. In erase, the device will erase all the selected sectors except for the ones that are protected. If all selected sectors are protected, the chip will toggle the toggle bit for about 100 µs and then drop back into read mode, having changed none of the data. Either CE or OE toggling will cause the DQ6 to toggle. In addition, an Erase Suspend/Resume command will cause the DQ6 to toggle. See “Toggle Bit I during Embedded Algorithm Operations” in s TIMING DIAGRAM for the Toggle Bit I timing specifications and diagrams. DQ5 Exceeded Timing Limits DQ5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under these conditions DQ5 will produce a “1”. This is a failure condition which indicates that the program or erase cycle was not successfully completed. Data Polling is the only operating function of the devices under this condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA). The OE and WE pins will control the output disable functions as described in “MBM29F800TA/BA User Bus Operation (BYTE = VIH)” and “MBM29F800TA/BA User Bus Operation (BYTE = VIH)” in s DEVICE BUS OPERATION. The DQ5 failure condition may also appear if a user tries to program a non blank location without erasing. In this case the device locks out and never complete the Embedded Algorithm operation. Hence, the system never reads a valid data on DQ7 bit and DQ6 never stops toggling. Once the device has exceeded timing limits, the DQ5 bit will indicate a “1.” Please note that this is not a device failure condition since the device was incorrectly used. If this occurs, rest the device with command sequence. DQ3 Sector Erase Timer After the completion of the initial sector erase command sequence the sector erase time-out will begin. DQ3 will remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector erase command sequence. If Data Polling or the Toggle Bit I indicates the device has been written with a valid erase command, DQ3 may be used to determine if the sector erase timer window is still open. If DQ3 is high (“1”) the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by Data Polling or Toggle Bit I. If DQ3 is low (“0”), the device will accept additional sector erase commands. To insure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 were high on the second status check, the command may not have been accepted. Refer to “Hardware Sequence Flags” : Hardware Sequence Flags. 19 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 DQ2 Toggle Bit II This toggle bit II, along with DQ6, can be used to determine whether the device is in the Embedded Erase Algorithm or in Erase Suspend. Successive reads from the erasing sector will cause DQ2 to toggle during the Embedded Erase Algorithm. If the device is in the erase-suspended-read mode, successive reads from the erase-suspended sector will cause DQ2 to toggle. When the device is in the erase-suspended-program mode, successive reads from the byte address of the non-erase suspended sector will indicate a logic “1” at the DQ2 bit. DQ6 is different from DQ2 in that DQ6 toggles only when the standard program or Erase, or Erase Suspend Program operation is in progress. The behavior of these two status bits, along with that of DQ7, is summarized as follows: Mode Program Erase Erase Suspend Read (Erase-Suspended Sector)*1 Erase Suspend Program DQ7 DQ7 0 1 DQ7 *2 DQ6 toggles toggles 1 toggles DQ2 1 toggles toggles 1 *2 *1 : These status flags apply when outputs are read from a sector that has been erase-suspended. *2 : These status flags apply when outputs are read from the byte address of the non-erase suspended sector. For example, DQ2 and DQ6 can be used together to determine the erase-suspend-read mode (DQ2 toggles while DQ6 does not). See also “Hardware Sequence Flags” in s COMMAND DEFINITIONSand “Toggle Bit Algorithm” in s FLOW CHART. Furthermore, DQ2 can also be used to determine which sector is being erased. When the device is in the erase mode, DQ2 toggles if this bit is read from the erasing sector. RY/BY Ready/Busy The MBM29F800TA/BA provides a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the device is busy with either a program or erase operation. If the output is high, the device is ready to accept any read/write or erase operation. When the RY/BY pin is low, the device will not accept any additional program or erase commands. If the MBM29F800TA/BA is placed in an Erase Suspend mode, the RY/BY output will be high. Also, since this is an open drain output, many RY/BY pins can be tied together in parallel with a pull up resistor to VCC. During programming, the RY/BY pin is driven low after the rising edge of the fourth WE pulse. During an erase operation, the RY/BY pin is driven low after the rising edge of the sixth WE pulse. The RY/BY pin will indicate a busy condition during the RESET pulse. Refer to “RY/BY Timing Diagram during Program/Erase Operations” and “RESET/RY/BY Timing Diagram” in s TIMING DIAGRAM for a detailed timing diagram. Since this is an open-drain output, the pull-up resistor needs to be connected to VCC; multiples of devices may be connected to the host system via more than one RY/BY pin in parallel. RESET Hardware Reset The MBM29F800TA/BA device may be reset by driving the RESET pin to VIL. The RESET pin has a pulse requirement and has to be kept low (VIL) for at least 500 ns in order to properly reset the internal state machine. 20 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 Any operation in the process of being executed will be terminated and the internal state machine will be reset to the read mode 20 µs after the RESET pin is driven low. Furthermore, once the RESET pin goes high, the device requires time of tRH before it will allow read access. When the RESET pin is low, the device will be in the standby mode for the duration of the pulse and all the data output pins will be tri-stated. If a hardware reset occurs during a program or erase operation, the data at that particular location will be corrupted. Please note that the RY/BY output signal should be ignored during the RESET pulse. Refer to “RESET/RY/BY Timing Diagram” in s TIMING DIAGRAM for the timing diagram. Refer to “Temporary Sector Unprotection” in s FUNCTIONAL DESCRIPTION for additional functionality. If hardware reset occurs during Embedded Erase Algorithm, there is a possibility that the erasing sector(s) cannot be used. Byte/Word Configuration The BYTE pin selects the byte (8-bit) mode or word (16-bit) mode for the MBM29F800TA/BA device. When this pin is driven high, the device operates in the word (16-bit) mode. The data is read and programmed at DQ15 to DQ0. When this pin is driven low, the device operates in byte (8-bit) mode. Under this mode, the DQ15/A-1 pin becomes the lowest address bit and DQ14 to DQ8 bits are tri-stated. However, the command bus cycle is always an 8-bit operation and hence commands are written at DQ7 to DQ0 and the DQ15 to DQ8 bits are ignored. Refer to “Timing Diagram for Word Mode Configuration”, “Timing Diagram for Byte Mode Configuration” and “BYTE Timing Diagram for Write Operations” in s TIMING DIAGRAM for the timing diagram. Data Protection The MBM29F800TA/BA are designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transitions. During power up the device automatically resets the internal state machine in the read mode. Also, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command sequences. The device also incorporate several features to prevent inadvertent write cycles resulting form VCC power-up and power-down transitions or system noise. Low VCC Write Inhibit To avoid initiation of a write cycle during VCC power-up and power-down, a write cycle is locked out for VCC less than 3.2 V (typically 3.7 V). If VCC < VLKO, the command register is disabled and all internal program/erase circuits are disabled. Under this condition the device will reset to the read mode. Subsequent writes will be ignored until the VCC level is greater than VLKO. It is the users responsibility to ensure that the control pins are logically correct to prevent unintentional writes when VCC is above 3.2 V. If Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector(s) cannot be used. Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE, CE, or WE will not initiate a write cycle. Logical Inhibit Writing is inhibited by holding any one of OE = VIL, CE = VIH, or WE = VIH. To initiate a write cycle CE and WE must be a logical zero while OE is a logical one. Power-Up Write Inhibit Power-up of the device with WE = CE = VIL and OE = VIH will not accept commands on the rising edge of WE. The internal state machine is automatically reset to the read mode on power-up. Sector Protection Device user is able to protect each sector individually to store and protect data. Protection circuit voids both write and erase commands that are addressed to protected sectors. Any commands to write or erase addressed to protected sector are ignore. Refer to “Sector Protection” in s FUNCTIONAL DESCRIPTION. 21 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s ABSOLUTE MAXIMUM RATINGS Parameter Storage Temperature Ambient Temperature with Power Applied Voltage with Respect to Ground All pins except A9, OE, RESET *1,*2 A9, OE, and RESET *2 Power Supply Voltage * * 1, 3 Symbol Tstg TA VIN, VOUT VIN VCC Rating Min −55 −40 –2.0 −2.0 –2.0 Max +125 +85 +7.0 +13.5 +7.0 Unit °C °C V V V *1 : Voltage is defined on the basis of VSS = GND = 0 V. *2 : Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may undershoot VSS to –2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods of up to 20 ns. *3 : Minimum DC input voltage on A9, OE, and RESET pins is –0.5 V. During voltage transitions, A9, OE, and RESET pins may undershoot VSS to –2.0 V for periods of up to 20 ns. Voltage difference between input and supply voltage. (VIN - VCC) does not exceed +9.0 V. Maximum DC input voltage on A9, OE, and RESET pins is +13.5 V which may overshoot to +14.0 V for periods of up to 20 ns. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. s RECOMMENDED OPERATING CONDITIONS Parameter Ambient Temperatuer Power Supply Voltage* Symbol TA VCC Part No.  MBM29F800TA/BA-55 MBM29F800TA/BA-70/-90 Value Min −40 +4.75 +4.50 Max +85 +5.25 +5.50 Unit °C V V * : Voltage is defined on the basis of VSS = GND = 0 V. Note : Operating ranges define those limits between which the functionality of the devices are guaranteed. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. 22 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT +0.8 V –0.5 V –2.0 V 20 ns 20 ns 20 ns Maximum Undershoot Waveform 20 ns VCC+2.0 V VCC+0.5 V +2.0 V 20 ns 20 ns Maximum Overshoot Waveform 1 20 ns +14.0 V +13.5 V VCC+0.5 V 20 ns 20 ns Note: This waveform is applied for A9, OE, and RESET. Maximum Overshoot Waveform 2 23 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s DC CHARACTERISTICS Value Parameter Input Leakage Current Output Leakage Current A9, OE, RESET Inputs Leakage Current VCC Active Current *1 VCC Active Current *2 Symbol ILI ILO ILIT ICC1 ICC2 Conditions Min VIN = VSS to VCC, VCC = VCC Max VOUT = VSS to VCC, VCC = VCC Max VCC = VCC Max, A9, OE, RESET = 12.5 V Byte CE = VIL, OE = VIH Word CE = VIL, OE = VIH VCC = VCC Max, CE = VIH, RESET = VIH VCC Current (Standby) ICC3 VCC = VCC Max, CE = VCC ± 0.3 V, RESET = VCC ± 0.3 V VCC = VCC Max, RESET = VIL VCC Current (Standby, Reset) ICC4 VCC = VCC Max, RESET = VSS ± 0.3 V Input Low Level Input High Level Voltage for Autoselect and Sector Protection (A9, OE, RESET) *3, *4 Output Low Voltage Level Output High Voltage Level VOH2 Low VCC Lock-Out Voltage VLKO IOH = –100 µA — VCC – 0.4 3.2 — 4.2 V V VIL VIH VID VOL VOH1 — — — IOL = 5.8 mA, VCC = VCC Min IOH = –2.5 mA, VCC = VCC Min — –0.5 2.0 11.5 — 2.4 5 0.8 VCC + 0.5 12.5 0.45 — µA V V V V V — — — — — 45 50 1 5 1 mA mA µA mA –1.0 –1.0 — Max +1.0 +1.0 50 38 mA µA µA µA Unit *1 : The ICC current listed includes both the DC operating current and the frequency dependent component (at 6 MHz). The frequency component typically is 2 mA/MHz, with OE at VIH. *2 : ICC active while Embedded Algorithm (program or erase) is in progress. *3 : Applicable to sector protection function. *4 : (VID – VCC) do not exceed 9 V. 24 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s AC CHARACTERISTICS • Read Only Operations Characteristics Parameter Read Cycle Time Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, CE or OE, Whichever Occurs First RESET Pin Low to Read Mode CE to BYTE Switching Low or High Symbol JEDEC Standard tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX — — tRC tACC tCE tOE tDF tDF tOH tREADY tELFL tELFH — CE = VIL OE = VIL OE = VIL — — — — — — Value Test Setup -55* Min 55      0   1 -70*2 Min 70      0   Max  70 70 30 20 20  20 5 -90*2 Min 90      0   Max  90 90 40 20 20  20 5 Unit ns ns ns ns ns ns ns µs ns Max  55 55 30 15 15  20 5 *1 : Test Conditions: Output Load: 1 TTL gate and 30 pF Input rise and fall times: 5 ns Input pulse levels: 0.0 V or 3.0 V Timing measurement reference level Input: 1.5 V Output: 1.5 V *2 : Test Conditions: Output Load: 1 TTL gate and 100 pF Input rise and fall times: 5 ns Input pulse levels: 0.45 V or 2.4 V Timing measurement reference level Input: 0.8 V and 2.0 V Output: 0.8 V and 2.0 V 5.0 V Diode = 1N3064 or Equivalent 2.7 kΩ Device Under Test 6.2 kΩ CL Diode = 1N3064 or Equivalent Notes : • CL = 30 pF including jig capacitance (MBM29F800TA/BA-55) • CL = 100 pF including jig capacitance (MBM29F800TA/BA-70/-90) Test Conditions 25 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 • Write/Erase/Program Operations Parameter Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Output Enable Hold Time Read Toggle and Data Polling — tGHWL tGHEL tELWL tWLEL tWHEH tEHWH tWLWH tELEH tWHWL tEHEL tWHWH1 tWHWH2 — — — — 2 Symbol Value -55 55 0 40 25 0 0 0                   8 16 1                              8        70 0 45 30 0 0 0 10 0 0 0 0 0 0 35 35 20 20     50 500 4 100 4 4 0 -70                   8 16 1                              8        90 0 45 45 0 0 0 10 0 0 0 0 0 0 45 45 20 20     50 500 4 100 4 4 0 -90                   8 16 1                              8        Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns µs µs s s µs ns µs µs µs µs ns JEDEC Standard Min Typ Max Min Typ Max Min Typ Max tAVAV tAVWL tWLAX tDVWH tWHDX — tWC tAS tAH tDS tDH tOES tOEH tGHWL tGHEL tCS tWS tCH tWH tWP tCP tWPH tCPH tWHWH1 tWHWH2 tVCS tVIDR tVLHT tWPP tOESP tCSP tRB 10 0 0 0 0 0 0 30 30 20 20     50 500 4 100 4 4 0 Read Recover Time Before Write Read Recover Time Before Write CE Setup Time WE Setup Time CE Hold Time WE Hold Time Write Pulse Width CE Pulse Width Write Pulse Width High CE Pulse Width High Programming Operation Byte Word Sector Erase Operation *1 VCC Setup Time RiseTime to VID Voltage Transition Time *2 Write Pulse Width *2 OE Setup Time to WE Active * — — — CE Setup Time to WE Active *2 Recover Time from RY/BY (Continued) 26 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 (Continued) Parameter RESET Pulse Width RESET Hold Time Before Read BYTE Switching Low to Output High-Z BYTE Switching High to Output Active Program/Erase Valid to RY/BY Delay Delay Time from Embedded Output Enable Symbols Value -55 500 50             30 55 55 55 500 50     -70         30 70 70 70 500 50     -90         40 90 90 90 Unit ns ns ns ns ns ns JEDEC Standard Min Typ Max Min Typ Max Min Typ Max — — — — — — tRP tRH tFLQZ tFHQV tBUSY tEOE *1 : This does not include the preprogramming time. *2 : These timing is for Sector Protection operation. 27 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s ERASE AND PROGRAMMING PERFORMANCE Limits Parameter Min Sector Erase Time Word Programming Time Byte Programming Time Chip Programming Time Erase/Program Cycle — — — — 100,000 Typ 1 16 8 8.4 — Max 8 200 150 20 — s µs µs s cycle Excludes 00h programming prior to erasure Excludes system-level overhead Excludes system-level overhead Unit Comments s TSOP PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin Capacitance Symbol CIN COUT CIN2 Test Setup VIN = 0 VOUT = 0 VIN = 0 Value Typ 8 8 8.5 Max 10 10 12.5 Unit pF pF pF Notes : • Test conditions TA = +25°C, f = 1.0 MHz • DQ15 /A-1 pin capacitance is stipulated by output capacitance. s SOP PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin Capacitance Symbol CIN COUT CIN2 Test Setup VIN = 0 VOUT = 0 VIN = 0 Value Typ 8 8 8.5 Max 10.5 10 12.5 Unit pF pF pF Notes : • Test conditions TA = +25°C, f = 1.0 MHz • DQ15 /A-1 pin capacitance is stipulated by output capacitance. 28 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s TIMING DIAGRAM • Key to Switching Waveforms WAVEFORM INPUTS Must Be Steady May Change from H to L May Change from L to H “H” or “L” Any Change Permitted Does Not Apply OUTPUTS Will Be Steady Will Be Changing from H to L Will Be Changing from L to H Changing State Unknown Center Line is HighImpedance “Off” State tRC Address tACC Addresses Stable CE tOE tDF OE tOEH WE tCE tOH Outputs High-Z Output Valid High-Z AC Waveforms for Read Operations 29 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 3rd Bus Cycle Address 555h tWC tAS PA tAH Data Polling PA tRC CE tCH tGHWL OE tWP tWHWH1 WE tCS tWPH tDF tOE PD DQ7 DOUT DOUT tOH tDH A0h Data tDS 5.0 V tCE Notes : • PA is address of the memory location to be programmed. • PD is data to be programmed at byte address. • DQ7 is the output of the complement of the data written to the device. • DOUT is the output of the data written to the device. • Figure indicates last two bus cycles out of four bus cycle sequence. • These waveforms are for the × 16 mode. AC Waveforms for Alternate WE Controlled Program Operations 30 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 3rd Bus Cycle Data Polling PA tAH tAS PA Address 555h tWC tWH WE tGHEL OE tCP tWHWH1 CE tCPH tWS tDH Data A0h tDS PD DQ7 DOUT 5.0 V Notes : • PA is address of the memory location to be programmed. • PD is data to be programmed at byte address. • DQ7 is the output of the complement of the data written to the device. • DOUT is the output of the data written to the device. • Figure indicates last two bus cycles out of four bus cycle sequence. • These waveforms are for the × 16 mode. (The addresses differ from × 8 mode.) AC Waveforms for Alternate CE Controlled Program Operations 31 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 tAH Address 555h tAS 2AAh 555h 555h 2AAh SA CE tGHWL tCH OE tWP WE tCS tWPH tDH 10h for Chip Erase 55h 80h AAh 55h 10h/30h Data tDS AAh VCC tVCS Notes : • SA is the sector address for Sector Erase. Addresses = 555h (Word) for Chip Erase. • These waveforms are for the × 16 mode. The addresses differ from × 8 mode. AC Waveforms for Chip/Sector Erase Operations 32 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 CE tCH tDF tOE OE tOEH WE tCE * DQ7 Data DQ7 DQ7 = Valid Data High-Z tWHWH1 or 2 DQ6 to DQ0 Data DQ6 to DQ0 = Output Flag DQ6 to DQ0 Valid Data High-Z *: DQ7 = Valid Data (The device has completed the Embedded operation). AC Waveforms for Data Polling during Embedded Algorithm Operations CE tOEH WE tOES OE * DQ6 Data DQ6 = Toggle DQ6 = Toggle tOE DQ6 = Stop Toggling DQ7 to DQ0 Valid *: DQ6 stops toggling (The device has completed the Embedded operation). AC Waveforms for Toggle Bit I during Embedded Algorithm Operations 33 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 CE Rising edge of the last WE signal WE Entire programming or erase operations RY/BY tBUSY RY/BY Timing Diagram during Program/Erase Operations WE RESET tRP tRB RY/BY tREADY RESET/RY/BY Timing Diagram 34 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 CE BYTE Data Output (DQ7 to DQ0) tELFH tFHQV A-1 DQ15 Data Output (DQ14 to DQ0) DQ14 to DQ0 DQ15/A-1 Timing Diagram for Word Mode Configuration CE BYTE tELFL DQ14 to DQ0 Data Output (DQ14 to DQ0) Data Output (DQ7 to DQ0) DQ15/A-1 DQ15 tFLQZ A-1 Timing Diagram for Byte Mode Configuration Falling edge of the last write signal CE or WE BYTE tSET (tAS) tHOLD (tAH) BYTE Timing Diagram for Write Operations 35 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 A18, A17, A16 A15, A14 A13, A12 SAX SAY A0 A1 A6 VID 5V A9 VID 5V OE tVLHT tOESP tWPP tVLHT tVLHT tVLHT WE tCSP CE Data tVLHT tOE 01h VCC SAX = Sector Address for initial sector SAY = Sector Address for next sector Note : A-1 is VIL on byte mode. AC Waveforms for Sector Protection Timing Diagram 36 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 VCC tVCS VID 3V RESET CE tVIDR tVLHT 3V WE tVLHT RY/BY Program or Erase Command Sequence tVLHT Unprotection period Temporary Sector Unprotection Timing Diagram Enter Embedded Erasing WE Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Program Erase Resume Erase Suspend Read Erase Erase Complete Erase Suspend Read DQ6 DQ2* Toggle DQ2 and DQ6 with OE or CE * : DQ2 is read from the erase-suspended sector. DQ2 vs. DQ6 37 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s FLOW CHART EMBEDDED ALGORITHMS Start Write Program Command Sequence (See Below) Data Polling Device Increment Address No Last Address ? Yes Programming Completed Program Command Sequence* (Address/Command): 555h/AAh 2AAh/55h 555h/A0h Program Address/Program Data * : The sequence is applied for × 16 mode. The addresses differ from × 8 mode. Embedded ProgramTM Algorithm 38 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 EMBEDDED ALGORITHMS Start Write Erase Command Sequece (See Below) Data Polling or Toggle Bit Successfully Completed Erasure Completed Chip Erase Command Sequence* (Address/Command): 555h/AAh Individual Sector/Multiple Sector* Erase Command Sequence (Address/Command): 555h/AAh 2AAh/55h 2AAh/55h 555h/80h 555h/80h 555h/AAh 555h/AAh 2AAh/55h 2AAh/55h 555h/10h Sector Address/30h * : The sequence is applied for × 16 mode. The addresses differ from × 8 mode. Sector Address/30h Additional sector erase commands are optional. Sector Address/30h Embedded EraseTM Algorithm 39 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 Start Read Byte (DQ7 to DQ0) Addr. = VA VA = Address for programming = Any of the sector addresses within the sector being erased during sector erase operation = Any of the sector addresses within the sector not being protected during chip erase operation Yes DQ7 = Data? No No DQ5 = 1? Yes Read Byte (DQ7 to DQ0) Addr. = VA DQ7 = Data? No Fail Yes Pass Note : DQ7 is rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Data Polling Algorithm 40 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 Start Read DQ7 to DQ0 Addr. = "H" or "L" *1 Read DQ7 to DQ0 Addr. = "H" or "L" DQ6 = Toggle? Yes No DQ5 = 1? Yes No *1, *2 Read DQ7 to DQ0 Addr. = "H" or "L" *1, *2 Read DQ7 to DQ0 Addr. = "H" or "L" DQ6 = Toggle? Yes Program/Erase Operation Not Complete.Write Reset Command No Program/Erase Operation Complete *1 : Read toggle bit twice to determine whether it is toggling. *2 : Recheck toggle bit because it may stop toggling as DQ5 changes to “1”. Toggle Bit Algorithm 41 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 Start Setup Sector Addr. (A18, A17, A16, A15, A14, A13, A12) PLSCNT = 1 OE = VID, A9 = VID, A6 = CE = VIL, RESET = VIH Activate WE Pulse Increment PLSCNT Time out 100 µs WE = VIH, CE = OE = VIL (A9 should remain VID) Read from Sector (Addr. = SA, A1 = 1, A0 = V6 = 0)* No No PLSCNT = 25? Yes Remove VID from A9 Write Reset Command Data = 01h? Yes Yes Protect Another Sector? No Device Failed Remove VID from A9 Write Reset Command Sector Protection Completed * : A-1 is VIL on byte mode. Sector Protection Algorithm 42 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 Start RESET = VID *1 Perform Erase or Program Operations RESET = VIH Temporary Sector Unprotection Completed *2 *1 : All protected sectors unprotected. *2 : All previously protected sectors are protected once again. Temporary Sector Unprotection Algorithm 43 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s ORDERING INFORMATION Standard Products Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29F800 T A -55 PFTN PACKAGE TYPE PFTN = 48-Pin Thin Small Outline Package (TSOP (1) ) Normal Bend PFTR = 48-Pin Thin Small Outline Package (TSOP (1) ) Reverse Bend PF = 44-Pin Small Outline Package SPEED OPTION See Product Selector Guide A = Device Revision BOOT CODE SECTOR ARCHITECTURE T = Top sector B = Bottom sector DEVICE NUMBER/DESCRIPTION MBM29F800 8Mega-bit (1M × 8-Bit or 512K × 16-Bit) CMOS Flash Memory 5.0 V-only Read, Write, and Erase 44 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s PACKAGE DIMENSIONS 48-pin plastic TSOP(1) (FPT-48P-M19) Note 1) * : Values do not include resin protrusion. Resin protrusion and gate protrusion are +0.15(.006) Max (each side) . Note 2) Pins width and pins thickness include plating thickness. Note 3) Pins width do not include tie bar cutting remainder. 48 LEAD No. 1 INDEX Details of "A" part 0.25(.010) 0~8˚ 0.60±0.15 (.024±.006) 24 25 20.00±0.20 (.787±.008) * 18.40±0.20 (.724±.008) * 12.00±0.20 (.472±.008) 1.10 –0.05 +0.10 +.004 .043 –.002 (Mounting height) 0.50(.020) "A" 0.10(.004) 0.17 –0.08 .007 –.003 C +0.03 +.001 0.10±0.05 (.004±.002) (Stand off height) 0.22±0.05 (.009±.002) 0.10(.004) M 2003 FUJITSU LIMITED F48029S-c-6-7 Dimensions in mm (inches) Note : The values in parentheses are reference values. (Continued) 45 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 48-pin plastic TSOP(1) (FPT-48P-M20) Note 1) * : Values do not include resin protrusion. Resin protrusion and gate protrusion are +0.15(.006) Max (each side) . Note 2) Pins width and pins thickness include plating thickness. Note 3) Pins width do not include tie bar cutting remainder. LEAD No. 1 48 INDEX Details of "A" part 0.60±0.15 (.024±.006) 0~8˚ 0.25(.010) 24 25 0.17 –0.08 +0.03 +.001 0.10(.004) .007 –.003 0.50(.020) 0.22±0.05 (.009±.002) 0.10(.004) M 0.10±0.05 (.004±.002) (Stand off height) "A" 1.10 –0.05 +0.10 +.004 * 18.40±0.20 (.724±.008) 20.00±0.20 (.787±.008) .043 –.002 (Mounting height) * 12.00±0.20(.472±.008) C 2003 FUJITSU LIMITED F48030S-c-6-7 Dimensions in mm (inches) Note : The values in parentheses are reference values. (Continued) 46 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 (Continued) 44-pin plastic SOP (FPT-44P-M16) Note 1) Note 2) Note 3) Note 4) +0.25 +.010 *1 : These dimensions include resin protrusion. *2 : These dimensions do not include resin protrusion. Pins width and pins thickness include plating thickness. Pins width do not include tie bar cutting remainder. 0.17 –0.04 .007 –.002 +0.03 +.001 *1 28.45 –0.20 1.120 –.008 44 23 16.00±0.20 (.630±.008) *2 13.00±0.10 (.512±.004) INDEX Details of "A" part 2.35±0.15 (Mounting height) (.093±.006) 0.25(.010) 1 22 +0.08 –0.07 +.0031 –.0028 "A" 0~8˚ 1.27(.050) 0.42 .017 0.13(.005) M 0.80±0.20 (.031±.008) 0.88±0.15 (.035±.006) 0.20 –0.15 +0.10 +.004 .008 –.006 (Stand off) 0.10(.004) C 2002 FUJITSU LIMITED F44023S-c-6-6 Dimensions in mm (inches) Note : The values in parentheses are reference values. 47 MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. 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Fujitsu assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). 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