S29GL016A90BFIR13

S29GL-A MirrorBit™ Flash Family S29GL064A, S29GL032A, and S29GL016A 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology Data Sheet ADVANCE INFORMATION Notice to Readers: T he Advance Information status indicates that this document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not design in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice. Publication Number S29GL-A_00 Revision A Amendment 3 Issue Date April 22, 2005 Advance Information Notice On Data Sheet Designations Spansion LLC issues data sheets with Advance Information or Preliminary designations to advise readers of product information or intended specifications throughout the product life cycle, including development, qualification, initial production, and full production. In all cases, however, readers are encouraged to verify that they have the latest information before finalizing their design. The following descriptions of Spansion data sheet designations are presented here to highlight their presence and definitions. Advance Information The Advance Information designation indicates that Spansion LLC is developing one or more specific products, but has not committed any design to production. Information presented in a document with this designation is likely to change, and in some cases, development on the product may discontinue. Spansion LLC therefore places the following conditions upon Advance Information content: “This document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not design in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice.” Preliminary The Preliminary designation indicates that the product development has progressed such that a commitment to production has taken place. This designation covers several aspects of the product life cycle, including product qualification, initial production, and the subsequent phases in the manufacturing process that occur before full production is achieved. Changes to the technical specifications presented in a Preliminary document should be expected while keeping these aspects of production under consideration. Spansion places the following conditions upon Preliminary content: “This document states the current technical specifications regarding the Spansion product(s) described herein. The Preliminary status of this document indicates that product qualification has been completed, and that initial production has begun. Due to the phases of the manufacturing process that require maintaining efficiency and quality, this document may be revised by subsequent versions or modifications due to changes in technical specifications.” Combination Some data sheets will contain a combination of products with different designations (Advance Information, Preliminary, or Full Production). This type of document will distinguish these products and their designations wherever necessary, typically on the first page, the ordering information page, and pages with DC Characteristics table and AC Erase and Program table (in the table notes). The disclaimer on the first page refers the reader to the notice on this page. Full Production (No Designation on Document) When a product has been in production for a period of time such that no changes or only nominal changes are expected, the Preliminary designation is removed from the data sheet. Nominal changes may include those affecting the number of ordering part numbers available, such as the addition or deletion of a speed option, temperature range, package type, or VIO range. Changes may also include those needed to clarify a description or to correct a typographical error or incorrect specification. Spansion LLC applies the following conditions to documents in this category: “This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion LLC deems the products to have been in sufficient production volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid combinations offered may occur.” Questions regarding these document designations may be directed to your local AMD or Fujitsu sales office. ii S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 S29GL-A MirrorBit™ Flash Family S29GL064A, S29GL032A, and S29GL016A 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology Data Sheet ADVANCE INFORMATION Distinctive Characteristics Architectural Advantages Single power supply operation — 3 volt read, erase, and program operations Manufactured on 200 nm MirrorBit process technology Secured Silicon Sector region — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence — May be programmed and locked at the factory or by the customer Flexible sector architecture — 64Mb (uniform sector models): 128 32 Kword (64 KB) sectors — 64Mb (boot sector models): 127 32 Kword (64 KB) sectors + 8 4Kword (8KB) boot sectors — 32Mb (uniform sector models): 64 32Kword (64KB) sectors — 32Mb (boot sector models): 63 32Kword (64KB) sectors + 8 4Kword (8KB) boot sectors — 16MB (boot sector models): 31 31Kword (64KB) sectors + 8 4Kword (8KB) boot sectors Compatibility with JEDEC standards — Provides pinout and software compatibility for singlepower supply flash, and superior inadvertent write protection 100,000 erase cycles typical per sector 20-year data retention typical Low power consumption (typical values at 3.0 V, 5 MHz) — 18 mA typical active read current — 50 mA typical erase/program current — 1 µA typical standby mode current Package options — 48-pin TSOP — 56-pin TSOP — 64-ball Fortified BGA — 48-ball fine-pitch BGA Software & Hardware Features Software features — Program Suspend & Resume: read other sectors before programming operation is completed — Erase Suspend & Resume: read/program other sectors before an erase operation is completed — Data# polling & toggle bits provide status — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices — Unlock Bypass Program command reduces overall multiple-word programming time Hardware features — Sector Group Protection: hardware-level method of preventing write operations within a sector group — Temporary Sector Unprotect: VID-level method of charging code in locked sectors — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models — Hardware reset input (RESET#) resets device — Ready/Busy# output (RY/BY#) detects program or erase cycle completion Performance Characteristics High performance — 90 ns access time — 4-word/8-byte page read buffer — 25 ns page read times — 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates Publication Number S29GL-A_00 Revision A Amendment 3 Issue Date April 22, 2005 This document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not design in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice. Advance Information General Description The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. The S29Gl016A is a 16 Mb device organized as 1,048,576 words or 2,097,152 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers. Access times as fast as 90 ns are available. Note that each access time has a specific operating voltage range (VCC) as specified in the Product Selector Guide and the Ordering Information–S29GL016A, Ordering Information–S29GL032A, and Ordering Information–S29GL064A. Package offerings include 48-pin TSOP, 56-pin TSOP, 48-ball fine-pitch BGA and 64-ball Fortified BGA, depending on model number. Each device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. Each device requires only a single 3.0 volt power supply for both read and write functions. In addition to a VCC input, a high-voltage accelerated program (ACC) feature provides shorter programming times through increased current on the WP#/ACC input. This feature is intended to facilitate factory throughput during system production, but may also be used in the field if desired. The device is entirely command set compatible with the JEDEC single-powersupply Flash standard. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Device programming and erasure are initiated through command sequences. Once a program or erase operation begins, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/Busy# (RY/BY#) output to determine whether the operation is complete. To facilitate programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write cycles to program data instead of four. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend/Erase Resume feature allows the host system to pause an erase operation in a given sector to read or program any other sector and then complete the erase operation. The Program Suspend/Program Resume feature enables the host system to pause a program operation in a given sector to read any other sector and then complete the program operation. The hardware RESET# pin terminates any operation in progress and resets the device, after which it is then ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the de- 2 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information vice, enabling the host system to read boot-up firmware from the Flash memory device. The device reduces power consumption in the standby mode when it detects specific voltage levels on CE# and RESET#, or when addresses are stable for a specified period of time. The Write Protect (WP#) feature protects the first or last sector by asserting a logic low on the WP#/ACC pin or WP# pin, depending on model number. The protected sector is still protected even during accelerated programming. The Secured Silicon Sector provides a 128-word/256-byte area for code or data that can be permanently protected. Once this sector is protected, no further changes within the sector can occur. Spansion MirrorBit flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via hot-hole assisted erase. The data is programmed using hot electron injection. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 3 Advance Information Table of Contents Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 6 S29GL064A, S29GL032A, S29GL016A .............................................................6 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 8 Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Logic Symbol–S29GL064A (Models R1, R2, R8, R9) ................................... 11 Logic Symbol–S29GL064A (Model R5) .......................................................... 12 Logic Symbol–S29GL064A (Model R6, R7) .................................................. 12 Logic Symbol–S29GL032A (Models R1, R2) ..................................................13 Logic Symbol–S29GL032A (Models R3, R4) ..................................................13 Logic Symbol–S29GL016A (Models R1, R2) ...................................................13 Unprotection Addresses ........................................................ 34 Table 25. S29GL064A (Models R6, R7) Sector Group Protection/ Unprotection Addresses ........................................................ 34 Temporary Sector Group Unprotect ............................................................35 Figure 1. Temporary Sector Group Unprotect Operation ............ 35 Figure 2. In-System Sector Group Protect/Unprotect Algorithms 36 Secured Silicon Sector Flash Memory Region ............................................ 37 Write Protect (WP#) ........................................................................................ 38 Hardware Data Protection ............................................................................... 38 Common Flash Memory Interface (CFI) . . . . . . 40 Table 26. CFI Query Identification String ................................ 40 Ordering Information–S29GL016A . . . . . . . . . . . 14 S29GL016A Standard Products ........................................................................ 14 Table 1. S29GL016A Ordering Options .................................... 14 Command Definitions . . . . . . . . . . . . . . . . . . . . . 44 Reading Array Data ............................................................................................44 Reset Command ..................................................................................................44 Autoselect Command Sequence ..................................................................... 45 Enter/Exit Secured Silicon Sector Command Sequence .......................... 45 Figure 3. Write Buffer Programming Operation......................... 49 Figure 4. Program Operation ................................................. 50 Ordering Information–S29GL032A . . . . . . . . . . . 15 S29GL032A Standard Products .........................................................................15 Table 2. S29GL032A Ordering Options .................................... 15 Ordering Information–S29GL064A . . . . . . . . . . . 16 S29GL064A Standard Products ....................................................................... 16 Table 3. S29GL064A Valid Combinations ................................. 17 Program Suspend/Program Resume Command Sequence .....................50 Figure 5. Program Suspend/Program Resume.......................... 51 Chip Erase Command Sequence ..................................................................... 51 Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 18 Table 4. Device Bus Operations ............................................. 18 Sector Erase Command Sequence . . . . . . . . . . . 53 Figure 6. Erase Operation ..................................................... 54 Word/Byte Configuration ..................................................................................19 Requirements for Reading Array Data .......................................................... 19 Writing Commands/Command Sequences .................................................. 19 Standby Mode ....................................................................................................... 20 Automatic Sleep Mode ....................................................................................... 21 RESET#: Hardware Reset Pin .......................................................................... 21 Output Disable Mode ......................................................................................... 21 Table 5. S29GL016A (Model R1) Top Boot Sector Addresses ...... 22 Table 6. S29GL016A (Model R2) Bottom Boot Sector Addresses ........................................................................... 22 Table 7. S29GL032A (Models R1, R2) Sector Addresses ............ 23 Table 8. S29GL032A (Model R3) Top Boot Sector Addresses ...... 24 Table 9. S29GL032A (Model R4) Bottom Boot Sector Addresses . 24 Table 10. S29GL064A (Models R1, R2, R8, R9) Sector Addresses 25 Table 11. S29GL064A (Model R3) Top Boot Sector Addresses ........................................................................... 26 Table 12. S29GL064A (Model R4) Bottom Boot Sector Addresses 27 Table 13. S29GL064A (Model R5) Sector Addresses ................. 28 Table 14. S29GL064A (Models R6, R7) Sector Addresses .......... 29 Erase Suspend/Erase Resume Commands ................................................... 54 Command Definitions .........................................................................................56 Write Operation Status .................................................................................... 58 DQ7: Data# Polling .............................................................................................58 Figure 7. Data# Polling Algorithm .......................................... 59 Table 30. Command Definitions (x16 Mode, BYTE# = VIH) ........ 56 Table 31. Command Definitions (x8 Mode, BYTE# = VIL) .......... 57 RY/BY#: Ready/Busy# ........................................................................................ 59 DQ6: Toggle Bit I ................................................................................................ 60 Figure 8. Toggle Bit Algorithm ............................................... 61 DQ2: Toggle Bit II ............................................................................................... 62 Reading Toggle Bits DQ6/DQ2 .......................................................................62 DQ5: Exceeded Timing Limits .........................................................................62 DQ3: Sector Erase Timer ................................................................................. 63 DQ1: Write-to-Buffer Abort ............................................................................ 63 Table 32. Write Operation Status ........................................... 63 Absolute Maximum Ratings . . . . . . . . . . . . . . . . 64 Figure 9. Maximum Negative Overshoot Waveform .................. 64 Figure 10. Maximum Positive Overshoot Waveform .................. 64 Autoselect Mode ................................................................................................. 30 Table 15. Autoselect Codes, (High Voltage Method) ................. 31 Sector Group Protection and Unprotection ................................................31 Table 16. S29GL016A (Model R1) Sector Group Protection/ Unprotection Addresses ........................................................ 32 Table 17. S29GL016A (Model R2) Sector Group Protection/ Unprotection Addresses ........................................................ 32 Table 18. S29GL032A (Models R1, R2) Sector Group Protection/ Unprotection Addresses ........................................................ 32 Table 19. S29GL032A (Models R3) Sector Group Protection/ Unprotection Address Table .................................................. 32 Table 20. S29GL032A (Models R4) Sector Group Protection/ Unprotection Address Table .................................................. 33 Table 21. S29GL064A (Models R1, R2, R8, R9) Sector Group Protection/Unprotection Addresses ......................................... 33 Table 22. S29GL064A (Model R3) Top Boot Sector Protection/ Unprotection Addresses ........................................................ 33 Table 23. S29GL064A (Model R4) Bottom Boot Sector Protection/ Unprotection Addresses ........................................................ 34 Table 24. S29GL064A (Model R5) Sector Group Protection/ Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 65 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 66 CMOS Compatible .............................................................................................. 66 Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 67 Figure 11. Test Setup........................................................... 67 Table 33. Test Specifications ................................................. 67 Figure 12. Input Waveforms and Measurement Levels .............. 67 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 68 Table 34. Read-Only Operations-S29GL064A Only .................... 68 Table 35. Read-Only Operations-S29GL032A Only .................... 68 Table 36. Read-Only Operation-S29GL016A Only ..................... 69 Figure 13. Read Operation Timings ........................................ 69 Figure 14. Page Read Timings ............................................... 70 Table 37. Hardware Reset (RESET#) ...................................... 70 Figure 15. Reset Timings ...................................................... 71 Table 38. Erase and Program Operations-S29GL064A ............... 72 Table 39. Erase and Program Operations-S29GL032A Only ........ 73 Table 40. Erase and Program Operations-S29GL016A Only ........ 74 4 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Figure 16. Program Operation Timings .................................... 75 Figure 17. Accelerated Program Timing Diagram....................... 75 Figure 18. Chip/Sector Erase Operation Timings ....................... 76 Figure 19. Data# Polling Timings (During Embedded Algorithms) .............................................. 76 Figure 20. Toggle Bit Timings (During Embedded Algorithms)..... 77 Figure 21. DQ2 vs. DQ6 ........................................................ 77 Table 41. Temporary Sector Unprotect ................................... 77 Figure 22. Temporary Sector Group Unprotect Timing Diagram .. 78 Figure 23. Sector Group Protect and Unprotect Timing Diagram.. 78 Table 42. Alternate CE# Controlled Erase and Program Operations-S29GL064A ........................................................ 79 Table 43. Alternate CE# Controlled Erase and Program Operations-S29GL032A ........................................................ 80 Table 44. Alternate CE# Controlled Erase and Program Operations-S29GL016A ........................................................ 81 Figure 24. Alternate CE# Controlled Write (Erase/Program) Operation Timings ................................................................ 82 Erase And Programming Performance . . . . . . . 83 Table 45. TSOP Pin and BGA Package Capacitance ................... 83 Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . 84 TS048—48-Pin Standard Thin Small Outline Package (TSOP) .............84 TS056—56-Pin Standard Thin Small Outline Package (TSOP) .............. 85 LAA064—64-Ball Fortified Ball Grid Array (BGA) ...................................86 VBN048—48-Ball Fine-pitch Ball Grid Array (BGA) 10x 6 mm Package ............................................................................................... 87 VBK048—Ball Fine-pitch Ball Grid Array (BGA) 8.15x 6.15 mm Package ........................................................................................88 Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 89 Revision A (October 13, 2004) ........................................................................89 Revision A1 (December 17, 2004)s .................................................................89 Revision A2 (January 28, 2005) .......................................................................89 Revision A3 (April 20, 2005) ............................................................................89 April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 5 Advance Information Product Selector Guide S29GL064A, S29GL032A, S29GL016A Part Number Speed Option Max. Access Time (ns) Max. CE# Access Time (ns) Max. Page Access Time (ns) Max. OE# Access Time (ns) 90 90 90 25 25 S29GL064A 10 100 100 30 30 11 110 110 30 30 90 90 90 25 25 S29GL032A 10 100 100 30 30 11 110 110 30 30 S29GL016A 90 90 90 25 25 10 100 100 30 30 6 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Block Diagram RY/BY# VCC VSS Sector Switches Erase Voltage Generator Input/Output Buffers DQ15–DQ0 (A-1) RESET# WE# WP#/ACC BYTE# State Control Command Register PGM Voltage Generator Chip Enable Output Enable Logic STB Data Latch CE# OE# STB VCC Detector Address Latch Y-Decoder Y-Gating Timer X-Decoder Cell Matrix AMax**–A0 Note: **AMAX GL064A = A21. **AMAX GL032A = A20. **AMAX GL016A = A19. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 7 Advance Information Connection Diagrams A15 A14 A13 A12 A11 A10 A9 A8 A191 3 A20 WE# RESET# 1,2 A21 1 WP#/ACC RY/BY#1 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE#1 VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 48-Pin Standard TSOP Notes: 1. Pin 9 is A21, Pin 13 is ACC, Pin 14 is WP#, Pin 15 is A19, and Pin 47 is VIO on S29GL064A (models R6, R7). 2. Pin 13 is NC on S29GL032A, and S29GL016A. 3. Pin 10 is NC on S29GL016A. NC NC A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# RESET# A211 WP#/ACC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56-Pin Standard TSOP 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 NC NC A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 NC VIO Notes: 1. Pin 15 is NC on S29GL032A. 8 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information 64-ball Fortified BGA Top View, Balls Facing Down A8 NC A7 A13 A6 A9 A5 WE# A4 B8 NC B7 A12 B6 A8 B5 RESET# B4 C8 NC C7 A14 C6 A10 C5 A213 C4 A18 C3 A6 C2 A2 C1 NC D8 VIO1 D7 A15 D6 A11 D5 A19 D4 A204 D3 A5 D2 A1 D1 NC E8 VSS E7 A16 E6 DQ7 E5 DQ5 E4 DQ2 E3 DQ0 E2 A0 E1 NC F8 NC F7 G8 NC G7 H8 NC H7 VSS H6 DQ6 H5 DQ4 H4 DQ3 H3 DQ1 H2 VSS H1 NC BYTE#2 DQ15/A-1 F6 DQ14 F5 DQ12 F4 DQ10 F3 DQ8 F2 CE# F1 VIO 1 G6 DQ13 G5 VCC G4 DQ11 G3 DQ9 G2 OE# G1 NC RY/BY# WP#/ACC A3 A7 A2 A3 A1 NC B3 A17 B2 A4 B1 NC Notes: 1. Ball D8 and Ball F1 are NC on S29GL064A (models R3, R4). 2. Ball F7 is NC on S29GL064A (model R5). 3. Ball C5 is NC on S29GL032A and S29GL016A. 4. Ball D4 is NC on S29GL016A. Special Package Handling Instructions Special handling is required for Flash Memory products in moulded packages (TSOP and BGA). The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 9 Advance Information 48-ball Fine-pitch BGA Top View, Balls Facing Down A6 A13 A5 A9 A4 WE# A3 B6 A12 B5 A8 B4 RESET# B3 C6 A14 C5 A10 C4 A212 C3 A18 C2 A6 C1 A2 D6 A15 D5 A11 D4 A19 D3 A20 3 E6 A16 E5 DQ7 E4 DQ5 E3 DQ2 E2 DQ0 E1 A0 F6 BYTE# F5 DQ14 F4 DQ12 F3 DQ10 F2 DQ8 F1 CE# 1 G6 DQ15/A-1 G5 DQ13 G4 VCC G3 DQ11 G2 DQ9 G1 OE# H6 VSS H5 DQ6 H4 DQ4 H3 DQ3 H2 DQ1 H1 VSS RY/BY# WP#/ACC A2 A7 A1 A3 B2 A17 B1 A4 D2 A5 D1 A1 Notes: 1. Ball F6 is VIO on S29GL064A (model R5). 2. Ball C4 is NC on S29GL032A and S29GL016A. 3. Ball D3 is NC on S29GL016A. Special Package Handling Instructions Special handling is required for Flash Memory products in molded packages (TSOP and BGA). The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. 10 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Pin Descriptions A21–A0 A20–A0 A19–A0 DQ7–DQ0 DQ14–DQ0 DQ15/A-1 CE# OE# WE# WP#/ACC ACC WP# RESET# RY/BY# BYTE# VCC VSS NC VIO = = = = = = = = = = = = = = = = 22 Address inputs 21 Address inputs 20 Address inputs 8 Data inputs/outputs 15 Data inputs/outputs DQ15 (Data input/output, word mode), A-1 (LSB Address input, byte mode) Chip Enable input Output Enable input Write Enable input Hardware Write Protect input/Programming Acceleration input Acceleration input Hardware Write Protect input Hardware Reset Pin input Ready/Busy output Selects 8-bit or 16-bit mode 3.0 volt-only single power supply (see Product Selector Guide for speed options and voltage supply tolerances) Device Ground Pin Not Connected Internally Output Buffer Power = = = Logic Symbols Logic Symbol–S29GL064A (Models R1, R2, R8, R9) 22 A21–A0 CE# OE# WE# WP#/ACC RESET# BYTE# VIO RY/BY# DQ15–DQ0 (A-1) 16 or 8 April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 11 Advance Information Logic Symbol–S29GL064A (Models R3, R4) 22 A21–A0 CE# OE# WE# WP#/ACC RESET# BYTE# RY/BY# DQ15–DQ0 (A-1) 16 or 8 Logic Symbol–S29GL064A (Model R5) 22 A21–A0 CE# OE# WE# ACC RESET# VIO RY/BY# DQ15–DQ0 16 Logic Symbol–S29GL064A (Models R6, R7) 22 A21–A0 CE# OE# WE# WP# ACC RESET# VIO DQ15–DQ0 16 12 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Logic Symbol–S29GL032A (Models R1, R2) 21 A20–A0 CE# OE# WE# WP#/ACC RESET# BYTE# VIO RY/BY# DQ15–DQ0 (A-1) 16 or 8 Logic Symbol–S29GL032A (Models R3, R4) 21 A20–A0 CE# OE# WE# WP#/ACC RESET# RY/BY# BYTE# DQ15–DQ0 (A-1) 16 or 8 Logic Symbol–S29GL016A (Models R1, R2) 20 A19–A0 CE# OE# WE# WP#/ACC RESET# BYTE# RY/BY# DQ15–DQ0 (A-1) 16 or 8 April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 13 Advance Information Ordering Information–S29GL016A S29GL016A Standard Products Standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: S29GL016A 10 T A I R1 0 PACKING TYPE 0 2 3 = Tray = 7-inch Tape and Reel = 13-inch Tape and Reel Additional Ordering Options R1 R2 = x8/x16, VCC=3.0-3.6V, Top boot sector device, top two address sectors protected when WP#/ACC=VIL = x8/x16, VCC=3.0-3.6V, Bottom boot sector device, bottom two address sectors protected when WP#/ACC=VIL TEMPERATURE RANGE I E = Industrial (–40°C to +85°C) = Engineering Samples (available prior to Production Release only) = Standard = Pb-Free PACKAGE MATERIAL SET A F PACKAGE TYPE T B F = Thin Small Outline Package (TSOP) Standard Pinout = Fine-pitch Ball-Grid Array Package = Fortified Ball-Grid Array Package SPEED OPTION DEVICE NUMBER/DESCRIPTION See Product Selector Guide and Valid Combinations S29GL016A 3.0 Volt-only, 16 Megabit Page-Mode Flash Memory Manufactured on 200 nm MirrorBit™ Process Technology. Table 1. S29GL016A Ordering Options S29GL016A Valid Combinations Device Number Speed Option Package, Material, & Temperature Range TAI,TFI S29GL016A 90, 10 BAI,BFI FAI,FFI R1, R2 0,2,3 (Note 1) Model Number Packing Type Package Description (Notes) TS048 (Note 2) VBK048 (Note 3) LAA064 (Note 3) TSOP Fine-Pitch BGA Fortified BGA Note: 1. 2. 3. Type 0 is standard. Specify others as required: TSOP’s can be packed in Types 0 and 3; BGA’s can be packed in Types 0, 2, or 3. TSOP package marking omits packing type designator from ordering part number. BGA package marking omits leading S29 and packing type designator from ordering part number. Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm availability of specific valid combinations and to check on newly released combinations. 14 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Ordering Information–S29GL032A S29GL032A Standard Products Standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: S29GL032A 90 T A I R1 0 PACKING TYPE 0 2 3 = Tray = 7-inch Tape and Reel = 13-inch Tape and Reel = x8/x16, VCC=3.0-3.6V, Uniform sector device, highest address sector protected when WP#/ACC=VIL = x8/x16, VCC=3.0-3.6V, Uniform sector device, lowest address sector protected when WP#/ACC=VIL = x8/x16, VCC=3.0-3.6V, Top boot sector device, top two address sectors protected when WP#/ACC=VIL = x8/x16, VCC=3.0-3.6V, Bottom boot sector device, bottom two address sectors protected when WP#/ACC=VIL MODEL NUMBER R1 R2 R3 R4 TEMPERATURE RANGE I E = Industrial (–40°C to +85°C) = Engineering Samples (available prior to Production Release only) = Standard = Pb-Free PACKAGE MATERIAL SET A F PACKAGE TYPE T B F = Thin Small Outline Package (TSOP) Standard Pinout = Fine-pitch Ball-Grid Array Package = Fortified Ball-Grid Array Package SPEED OPTION DEVICE NUMBER/DESCRIPTION See Product Selector Guide and Valid Combinations S29GL032A 32 Megabit Page-Mode Flash Memory Manufactured using 200 nm MirrorBit™ Process Technology, 3.0 Volt-only Read, Program, and Erase Table 2. S29GL032A Ordering Options S29GL032A Valid Combinations Device Number Speed Option Package, Material, & Temperature Range TAI,TFI FAI,FFI S29GL032A 90, 10, 11 TAI,TFI BAI,BFI FAI,FFI R3 ,R4 Model Number R1, R2 0,2,3 (Note 1) Packing Type Package Description (Notes) TS056 (Note 2) LAA064 (Note 3) TS048 (Note 2) VBN048 (Note 3) LAA064 (Note 3) TSOP Fortified BGA TSOP Fine-Pitch BGA Fortified BGA Notes: 1. 2. 3. Type 0 is standard. Specify others as required: TSOPs can be packed in Types 0 and 3; BGAs can be packed in Types 0, 2, or 3. TSOP package marking omits packing type designator from the ordering part number. BGA package marking omits leading “S29” and packing type designator from the ordering part number. Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm availability of specific valid combinations and to check on newly released combinations. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 15 Advance Information Ordering Information–S29GL064A S29GL064A Standard Products Standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: S29GL064A 90 T A I R1 2 PACKING TYPE 0 2 3 = Tray = 7” Tape and Reel = 13” Tape and Reel = x8/x16, VCC=3.0-3.6V, Uniform sector device, highest address sector protected when WP#/ACC=VIL = x8/x16, VCC=3.0-3.6V, Uniform sector device, lowest address sector protected when WP#/ACC=VIL = x8/x16, VCC=3.0-3.6V, Top boot sector device, top two address sectors protected when WP#/ACC=VIL = x8/x16, VCC=3.0-3.6V, Bottom boot sector device, bottom two address sectors protected when WP#/ACC=VIL = x16, VCC=3.0-3.6V, Uniform sector device = x16, VCC=3.0-3.6V, Uniform sector device, highest address sector protected when WP#=VIL = x16, VCC=3.0-3.6V, Uniform sector device, lowest address sector protected when WP#=VIL = x8/x16, VCC=3.0-3.6V, Uniform sector device, highest address sector protected when WP#=VIL, TSO48 only = x8/x16, VCC=3.0-3.6V, Uniform sector device, lowest address sector protected when WP#=VIL, TSO48 only MODEL NUMBER R1 R2 R3 R4 R5 R6 R7 R8 R9 TEMPERATURE RANGE I E = Industrial (–40°C to +85°C) = Engineering Samples (available prior to Production Release only) = Standard = Pb-Free PACKAGE MATERIAL SET A F PACKAGE TYPE T B F = Thin Small Outline Package (TSOP) Standard Pinout = Fine-pitch Ball-Grid Array Package = Fortified Ball-Grid Array Package SPEED OPTION DEVICE NUMBER/DESCRIPTION See Product Selector Guide and Valid Combinations S29GL064A, 64 Megabit Page-Mode Flash Memory Manufactured using 200 nm MirrorBitTM Process Technology, 3.0 Volt-only Read, Program, and Erase 16 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Table 3. S29GL064A Valid Combinations S29GL064A Valid Combinations Device Number Speed Option Package, Material & Temperature Range TAI, TFI S29GL064A 90, 10, 11 BAI, BFI FAI, FFI Model Number R3, R4, R6, R7, R8, R9 R1, R2 R3, R4, R5 R1, R2, R3, R4, R5 0, 2, 3 (Note 1) Packing Type Package Description TS048 (Note 2) TS056 (Note 2) VBN048 (Note 3) LAA064 (Note 3) TSOP TSOP Fine-pitch BGA Fortified BGA Notes: 1. 2. 3. Type 0 is standard. Specify others as required: TSOPs can be packed in Types 0 and 3; BGAs can be packed in Types 0, 2, or 3. TSOP package marking omits packing type designator from ordering part number. BGA package marking omits leading S29 and packing type designator from ordering part number. Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm availability of specific valid combinations and to check on newly released combinations. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 17 Advance Information Device Bus Operations This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 4 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. Table 4. Device Bus Operations DQ8–DQ15 Operation Read Write (Program/Erase) Accelerated Program Standby Output Disable Reset Sector Group Protect (Note 2) Sector Group Unprotect (Note 2) Temporary Sector Group Unprotect CE# L L L VCC ± 0.3 V L X L OE# WE# RESET# L H H X H X H H L L X H X L H H H VCC ± 0.3 V H L VID WP# X (Note 3) (Note 3) X X X H ACC X X VHH H X X X Addresses (Note 1) AIN AIN AIN X X X DQ0– DQ7 DOUT BYTE# = VIH DOUT BYTE# = VIL DQ8–DQ14 = High-Z, DQ15 = A-1 High-Z High-Z High-Z X (Note 4) (Note 4) (Note 4) (Note 4) High-Z High-Z High-Z High-Z High-Z High-Z X SA, A6 =L, A3=L, A2=L, (Note 4) A1=H, A0=L SA, A6=H, A3=L, A2=L, (Note 4) A1=H, A0=L AIN L H L VID VID H X X X X X X H X (Note 4) (Note 4) High-Z Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 11.5–12.5 V, X = Don’t Care, SA = Sector Address, AIN = Address In, DIN = Data In, DOUT = Data Out Notes: 1. Addresses are Amax:A0 in word mode; Amax:A-1 in byte mode. Sector addresses are Amax:A15 in both modes. 2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Group Protection and Unprotection” section. 3. If WP# = VIL, the first or last sector remains protected (for uniform sector devices), and the two outer boot sectors are protected (for boot sector devices). If WP# = VIH, the first or last sector, or the two outer boot sectors are protected or unprotected as determined by the method described in Sector Group Protection and Unprotection on page 31. All sectors are unprotected when shipped from the factory (The Secured Silicon Sector may be factory protected depending on version ordered.) 4. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 7, on page 57). 18 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Word/Byte Configuration The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic 1, the device is in word configuration, DQ0–DQ15 are active and controlled by CE# and OE#. If the BYTE# pin is set at logic 0, the device is in byte configuration, and only data I/O pins DQ0–DQ7 are active and controlled by CE# and OE#. The data I/ O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered. See Reading Array Data on page 43 for more information. Refer to the AC ReadOnly Operations table for timing specifications and the timing diagram. Refer to the DC Characteristics table for the active current specification on reading array data. Page Mode Read The device is capable of fast page mode read and is compatible with the page mode Mask ROM read operation. This mode provides faster read access speed for random locations within a page. The page size of the device is 4 words/8 bytes. The appropriate page is selected by the higher address bits A(max)–A2. Address bits A1–A0 in word mode (A1–A-1 in byte mode) determine the specific word within a page. This is an asynchronous operation; the microprocessor supplies the specific word location. The random or initial page access is equal to tACC or tCE and subsequent page read accesses (as long as the locations specified by the microprocessor falls within that page) is equivalent to tPACC. When CE# is deasserted and reasserted for a subsequent access, the access time is tACC or tCE. Fast page mode accesses are obtained by keeping the read-page addresses constant and changing the intra-read page addresses. Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program a word, instead of four. The Word Program Command Sequence on page 44 contains details on programming data to the device using both standard and Unlock Bypass command sequences. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 19 Advance Information An erase operation can erase one sector, multiple sectors, or the entire device. Tables 7 – 25 indicate the address space that each sector occupies. Refer to the DC Characteristics table for the active current specification for the write mode. The AC Characteristics section contains timing specification tables and timing diagrams for write operations. Write Buffer Write Buffer Programming allows the system write to a maximum of 16 words/ 32 bytes in one programming operation. This results in faster effective programming time than the standard programming algorithms. See Write Buffer on page 20 for more information. Accelerated Program Operation The device offers accelerated program operations through the ACC function. This is one of two functions provided by the WP#/ACC or ACC pin, depending on model number. This function is primarily intended to allow faster manufacturing throughput at the factory. If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass mode, temporarily unprotects any protected sector groups, and uses the higher voltage on the pin to reduce the time required for program operations. The system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing VHH from the WP#/ ACC or ACC pin, depending on model number, returns the device to normal operation. Note that the WP#/ACC or ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result. WP# contains an internal pullup; when unconnected, WP# is at VIH. Autoselect Functions If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to Autoselect Mode on page 30 and Autoselect Command Sequence on page 44 for more information. Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VIO ± 0.3 V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within VIO ± 0.3 V, the device is in the standby mode, but the standby current is greater. The device requires standard access time (tCE) for read access when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. Refer to the DC Characteristics on page 64 for the standby current specification. 20 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. Refer to the DC Characteristics on page 64 for the automatic sleep mode current specification. RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3 V, the device draws CMOS standby current (ICC5). If RESET# is held at VIL but not within VSS±0.3 V, the standby current is greater. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. Refer to the AC Characteristics tables for RESET# parameters and to Figure 15, on page 69 for the timing diagram. Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 21 Advance Information Table 5. S29GL016A (Model R1) Top Boot Sector Addresses Sector Size Sector A19–A12 (KB/ Kwords) SA0 000000xxx 64/32 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 000001xxx 000010xxx 000011xxx 000100xxx 000101xxx 000110xxx 000111xxx 001000xxx 001001xxx 001010xxx 001011xxx 001100xxx 001101xxx 001101xxx 001111xxx 010000xxx 010001xxx 010010xxx 010011xxx 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 000000h–00FFFFh 010000h–01FFFFh 020000h–02FFFFh 030000h–03FFFFh 040000h–04FFFFh 050000h–05FFFFh 060000h–06FFFFh 070000h–07FFFFh 080000h–08FFFFh 090000h–09FFFFh 0A0000h–0AFFFFh 0B0000h–0BFFFFh 0C0000h–0CFFFFh 0D0000h–0DFFFFh 0E0000h–0EFFFFh 0F0000h–0FFFFFh 100000h–00FFFFh 110000h–11FFFFh 120000h–12FFFFh 130000h–13FFFFh 16-bit Address Range 00000h–07FFFh 08000h–0FFFFh 10000h–17FFFh 18000h–1FFFFh 20000h–27FFFh 28000h–2FFFFh 30000h–37FFFh 38000h–3FFFFh 40000h–47FFFh 48000h–4FFFFh 50000h–57FFFh 58000h–5FFFFh 60000h–67FFFh 68000h–6FFFFh 70000h–77FFFh 78000h–7FFFFh 80000h–87FFFh 88000h–8FFFFh 90000h–97FFFh 98000h–9FFFFh Sector SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 Sector Size (KB/ Kwords) 010100xxx 64/32 A19–A12 010101xxx 010110xxx 010111xxx 011000xxx 011001xxx 011010xxx 011011xxx 011000xxx 011101xxx 011110xxx 111111000 111111001 111111010 111111011 111111100 111111101 111111110 111111111 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8-bit Address Range 140000h–14FFFFh 150000h–15FFFFh 160000h–16FFFFh 170000h–17FFFFh 180000h–18FFFFh 190000h–19FFFFh 1A0000h–1AFFFFh 1B0000h–1BFFFFh 1C0000h–1CFFFFh 1D0000h–1DFFFFh 1E0000h–1EFFFFh 1F0000h–1F1FFFh 1F2000h–1F3FFFh 1F4000h–1F5FFFh 1F6000h–1F7FFFh 1F8000h–1F9FFFh 1FA000h–1FBFFFh 1FC000h–1FDFFFh 1FE000h–1FFFFFh 16-bit Address Range A0000h–A7FFFh A8000h–AFFFFh B0000h–B7FFFh B8000h–BFFFFh C0000h–C7FFFh C8000h–CFFFFh D0000h–D7FFFh D8000h–DFFFFh E0000h–E7FFFh E8000h–EFFFFh F0000h–F7FFFh 0F8000h–0F8FFFh 0F9000h–0F9FFFh 0FA000h–0FAFFFh 0FB000h–0FBFFFh 0FC000h–0FCFFFh 0FD000h–0FDFFFh 0FE000h–0FEFFFh 0FF000h–0FFFFFh Table 6. S29GL016A (Model R2) Bottom Boot Sector Addresses Sector Size Sector A19–A12 (KB/ Kwords) SA0 000000000 8/4 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 000000001 000000010 000000011 000000100 000000101 000000110 000000111 000001xxx 000010xxx 000011xxx 000100xxx 000101xxx 000110xxx 000111xxx 001000xxx 001001xxx 001010xxx 001011xxx 8/4 8/4 8/4 8/4 8/4 8/4 8/4 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 000000h–001FFFh 002000h–003FFFh 004000h–005FFFh 006000h–007FFFh 008000h–009FFFh 00A000h–00BFFFh 00C000h–00DFFFh 00E000h–00FFFFFh 010000h–01FFFFh 020000h–02FFFFh 030000h–03FFFFh 040000h–04FFFFh 050000h–05FFFFh 060000h–06FFFFh 070000h–07FFFFh 080000h–08FFFFh 090000h–09FFFFh 0A0000h–0AFFFFh 0B0000h–0BFFFFh 16-bit Address Range 00000h–00FFFh 01000h–01FFFh 02000h–02FFFh 03000h–03FFFh 04000h–04FFFh 05000h–05FFFh 06000h–06FFFh 07000h–07FFFh 08000h–0FFFFh 10000h–17FFFh 18000h–1FFFFh 20000h–27FFFh 28000h–2FFFFh 30000h–37FFFh 38000h–3FFFFh 40000h–47FFFh 48000h–4FFFFh 50000h–57FFFh 58000h–5FFFFh Sector SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 Sector Size (KB/ Kwords) 001100xxx 64/32 A19–A12 001101xxx 001101xxx 001111xxx 010000xxx 010001xxx 010010xxx 010011xxx 010100xxx 010101xxx 010110xxx 010111xxx 011000xxx 011001xxx 011010xxx 011011xxx 011000xxx 011101xxx 011110xxx 011111xxx 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 0C0000h–0CFFFFh 0D0000h–0DFFFFh 0E0000h–0EFFFFh 0F0000h–0FFFFFh 100000h–00FFFFh 110000h–11FFFFh 120000h–12FFFFh 130000h–13FFFFh 140000h–14FFFFh 150000h–15FFFFh 160000h–16FFFFh 170000h–17FFFFh 180000h–18FFFFh 190000h–19FFFFh 1A0000h–1AFFFFh 1B0000h–1BFFFFh 1C0000h–1CFFFFh 1D0000h–1DFFFFh 1E0000h–1EFFFFh 1F0000h–1FFFFFh 16-bit Address Range 60000h–67FFFh 68000h–6FFFFh 70000h–77FFFh 78000h–7FFFFh 80000h–87FFFh 88000h–8FFFFh 90000h–97FFFh 98000h–9FFFFh A0000h–A7FFFh A8000h–AFFFFh B0000h–B7FFFh B8000h–BFFFFh C0000h–C7FFFh C8000h–CFFFFh D0000h–D7FFFh D8000h–DFFFFh E0000h–E7FFFh E8000h–EFFFFh F0000h–F7FFFh F8000h–FFFFFh 22 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Table 7. S29GL032A (Models R1, R2) Sector Addresses Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 A20-A15 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 000000–00FFFF 010000–01FFFF 020000–02FFFF 030000–03FFFF 040000–04FFFF 050000–05FFFF 060000–06FFFF 070000–07FFFF 080000–08FFFF 090000–09FFFF 0A0000–0AFFFF 0B0000–0BFFFF 0C0000–0CFFFF 0D0000–0DFFFF 0E0000–0EFFFF 0F0000–0FFFFF 100000–10FFFF 110000–11FFFF 120000–12FFFF 130000–13FFFF 140000–14FFFF 150000–15FFFF 160000–16FFFF 170000–17FFFF 180000–18FFFF 190000–19FFFF 1A0000–1AFFFF 1B0000–1BFFFF 1C0000–1CFFFF 1D0000–1DFFFF 1E0000–1EFFFF 1F0000–1FFFFF 16-bit Address Range 000000–007FFF 008000–00FFFF 010000–017FFF 018000–01FFFF 020000–027FFF 028000–02FFFF 030000–037FFF 038000–03FFFF 040000–047FFF 048000–04FFFF 050000–057FFF 058000–05FFFF 060000–067FFF 068000–06FFFF 070000–077FFF 078000–07FFFF 080000–087FFF 088000–08FFFF 090000–097FFF 098000–09FFFF 0A0000–0A7FFF 0A8000–0AFFFF 0B0000–0B7FFF 0B8000–0BFFFF 0C0000–0C7FFF 0C8000–0CFFFF 0D0000–0D7FFF 0D8000–0DFFFF 0E0000–0E7FFF 0E8000–0EFFFF 0F0000–0F7FFF 0F8000–0FFFFF Sector SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 A20-A15 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 200000–20FFFF 210000–21FFFF 220000–22FFFF 230000–23FFFF 240000–24FFFF 250000–25FFFF 260000–26FFFF 270000–27FFFF 280000–28FFFF 290000–29FFFF 2A0000–2AFFFF 2B0000–2BFFFF 2C0000–2CFFFF 2D0000–2DFFFF 2E0000–2EFFFF 2F0000–2FFFFF 300000–30FFFF 310000–31FFFF 320000–32FFFF 330000–33FFFF 340000–34FFFF 350000–35FFFF 360000–36FFFF 370000–37FFFF 380000–38FFFF 390000–39FFFF 3A0000–3AFFFF 3B0000–3BFFFF 3C0000–3CFFFF 3D0000–3DFFFF 3E0000–3EFFFF 3F0000–3FFFFF 16-bit Address Range 100000–107FFF 108000–10FFFF 110000–117FFF 118000–11FFFF 120000–127FFF 128000–12FFFF 130000–137FFF 138000–13FFFF 140000–147FFF 148000–14FFFF 150000–157FFF 158000–15FFFF 160000–167FFF 168000–16FFFF 170000–177FFF 178000–17FFFF 180000–187FFF 188000–18FFFF 190000–197FFF 198000–19FFFF 1A0000–1A7FFF 1A8000–1AFFFF 1B0000–1B7FFF 1B8000–1BFFFF 1C0000–1C7FFF 1C8000–1CFFFF 1D0000–1D7FFF 1D8000–1DFFFF 1E0000–1E7FFF 1E8000–1EFFFF 1F0000–1F7FFF 1F8000–1FFFFF April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 23 Advance Information Table 8. S29GL032A (Model R3) Top Boot Sector Addresses Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 A20–A12 000000xxx 000001xxx 000010xxx 000011xxx 000100xxx 000101xxx 000110xxx 000111xxx 001000xxx 001001xxx 001010xxx 001011xxx 001100xxx 001101xxx 001101xxx 001111xxx 010000xxx 010001xxx 010010xxx 010011xxx 010100xxx 010101xxx 010110xxx 010111xxx 011000xxx 011001xxx 011010xxx 011011xxx 011100xxx 011101xxx 011110xxx 011111xxx 100000xxx 100001xxx 100010xxx 101011xxx Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 16-bit Address Range Sector SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 A20–A12 100100xxx 100101xxx 100110xxx 100111xxx 101000xxx 101001xxx 101010xxx 101011xxx 101100xxx 101101xxx 101110xxx 101111xxx 110000xxx 110001xxx 110010xxx 110011xxx 100100xxx 110101xxx 110110xxx 110111xxx 111000xxx 111001xxx 111010xxx 111011xxx 111100xxx 111101xxx 111110xxx 111111000 111111001 111111010 111111011 111111100 111111101 111111110 111111111 Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8-bit Address Range 240000h–24FFFFh 250000h–25FFFFh 260000h–26FFFFh 270000h–27FFFFh 280000h–28FFFFh 290000h–29FFFFh 2A0000h–2AFFFFh 2B0000h–2BFFFFh 2C0000h–2CFFFFh 2D0000h–2DFFFFh 2E0000h–2EFFFFh 2F0000h–2FFFFFh 300000h–30FFFFh 310000h–31FFFFh 320000h–32FFFFh 330000h–33FFFFh 340000h–34FFFFh 350000h–35FFFFh 360000h–36FFFFh 370000h–37FFFFh 380000h–38FFFFh 390000h–39FFFFh 3A0000h–3AFFFFh 3B0000h–3BFFFFh 3C0000h–3CFFFFh 3D0000h–3DFFFFh 3E0000h–3EFFFFh 3F0000h–3F1FFFh 3F2000h–3F3FFFh 3F4000h–3F5FFFh 3F6000h–3F7FFFh 3F8000h–3F9FFFh 3FA000h–3FBFFFh 3FC000h–3FDFFFh 3FE000h–3FFFFFh 16-bit Address Range 120000h–127FFFh 128000h–12FFFFh 130000h–137FFFh 138000h–13FFFFh 140000h–147FFFh 148000h–14FFFFh 150000h–157FFFh 158000h–15FFFFh 160000h–167FFFh 168000h–16FFFFh 170000h–177FFFh 178000h–17FFFFh 180000h–187FFFh 188000h–18FFFFh 190000h–197FFFh 198000h–19FFFFh 1A0000h–1A7FFFh 1A8000h–1AFFFFh 1B0000h–1B7FFFh 1B8000h–1BFFFFh 1C0000h–1C7FFFh 1C8000h–1CFFFFh 1D0000h–1D7FFFh 1D8000h–1DFFFFh 1E0000h–1E7FFFh 1E8000h–1EFFFFh 1F0000h–1F7FFFh 1F8000h–1F8FFFh 1F9000h–1F9FFFh 1FA000h–1FAFFFh 1FB000h–1FBFFFh 1FC000h–1FCFFFh 1FD000h–1FDFFFh 1FE000h–1FEFFFh 1FF000h–1FFFFFh 000000h–00FFFFh 00000h–07FFFh 010000h–01FFFFh 08000h–0FFFFh 020000h–02FFFFh 10000h–17FFFh 030000h–03FFFFh 18000h–1FFFFh 040000h–04FFFFh 20000h–27FFFh 050000h–05FFFFh 28000h–2FFFFh 060000h–06FFFFh 30000h–37FFFh 070000h–07FFFFh 38000h–3FFFFh 080000h–08FFFFh 40000h–47FFFh 090000h–09FFFFh 48000h–4FFFFh 0A0000h–0AFFFFh 50000h–57FFFh 0B0000h–0BFFFFh 58000h–5FFFFh 0C0000h–0CFFFFh 60000h–67FFFh 0D0000h–0DFFFFh 68000h–6FFFFh 0E0000h–0EFFFFh 70000h–77FFFh 0F0000h–0FFFFFh 78000h–7FFFFh 100000h–00FFFFh 80000h–87FFFh 110000h–11FFFFh 88000h–8FFFFh 120000h–12FFFFh 90000h–97FFFh 130000h–13FFFFh 98000h–9FFFFh 140000h–14FFFFh A0000h–A7FFFh 150000h–15FFFFh A8000h–AFFFFh 160000h–16FFFFh B0000h–B7FFFh 170000h–17FFFFh B8000h–BFFFFh 180000h–18FFFFh C0000h–C7FFFh 190000h–19FFFFh C8000h–CFFFFh 1A0000h–1AFFFFh D0000h–D7FFFh 1B0000h–1BFFFFh D8000h–DFFFFh 1C0000h–1CFFFFh E0000h–E7FFFh 1D0000h–1DFFFFh E8000h–EFFFFh 1E0000h–1EFFFFh F0000h–F7FFFh 1F0000h–1FFFFFh F8000h–FFFFFh 200000h–20FFFFh F9000h–107FFFh 210000h–21FFFFh 108000h–10FFFFh 220000h–22FFFFh 110000h–117FFFh 230000h–23FFFFh 118000h–11FFFFh Table 9. S29GL032A (Model R4) Bottom Boot Sector Addresses (Sheet 1 of 2) Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 A20–A12 000000000 000000001 000000010 000000011 000000100 000000101 000000110 000000111 000001xxx 000010xxx 000011xxx 000100xxx 000101xxx 000110xxx 000111xxx 001000xxx 001001xxx 001010xxx 001011xxx Sector Size (KB/ Kwords) 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 000000h–001FFFh 002000h–003FFFh 004000h–005FFFh 006000h–007FFFh 008000h–009FFFh 00A000h–00BFFFh 00C000h–00DFFFh 00E000h–00FFFFFh 010000h–01FFFFh 020000h–02FFFFh 030000h–03FFFFh 040000h–04FFFFh 050000h–05FFFFh 060000h–06FFFFh 070000h–07FFFFh 080000h–08FFFFh 090000h–09FFFFh 0A0000h–0AFFFFh 0B0000h–0BFFFFh 16-bit Address Range 00000h–00FFFh 01000h–01FFFh 02000h–02FFFh 03000h–03FFFh 04000h–04FFFh 05000h–05FFFh 06000h–06FFFh 07000h–07FFFh 08000h–0FFFFh 10000h–17FFFh 18000h–1FFFFh 20000h–27FFFh 28000h–2FFFFh 30000h–37FFFh 38000h–3FFFFh 40000h–47FFFh 48000h–4FFFFh 50000h–57FFFh 58000h–5FFFFh Sector SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 A20–A12 001100xxx 001101xxx 001101xxx 001111xxx 010000xxx 010001xxx 010010xxx 010011xxx 010100xxx 010101xxx 010110xxx 010111xxx 011000xxx 011001xxx 011010xxx 011011xxx 011000xxx 011101xxx 011110xxx Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 0C0000h–0CFFFFh 0D0000h–0DFFFFh 0E0000h–0EFFFFh 0F0000h–0FFFFFh 100000h–00FFFFh 110000h–11FFFFh 120000h–12FFFFh 130000h–13FFFFh 140000h–14FFFFh 150000h–15FFFFh 160000h–16FFFFh 170000h–17FFFFh 180000h–18FFFFh 190000h–19FFFFh 1A0000h–1AFFFFh 1B0000h–1BFFFFh 1C0000h–1CFFFFh 1D0000h–1DFFFFh 1E0000h–1EFFFFh 16-bit Address Range 60000h–67FFFh 68000h–6FFFFh 70000h–77FFFh 78000h–7FFFFh 80000h–87FFFh 88000h–8FFFFh 90000h–97FFFh 98000h–9FFFFh A0000h–A7FFFh A8000h–AFFFFh B0000h–B7FFFh B8000h–BFFFFh C0000h–C7FFFh C8000h–CFFFFh D0000h–D7FFFh D8000h–DFFFFh E0000h–E7FFFh E8000h–EFFFFh F0000h–F7FFFh 24 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Table 9. S29GL032A (Model R4) Bottom Boot Sector Addresses (Sheet 2 of 2) Sector SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 A20–A12 011111xxx 100000xxx 100001xxx 100010xxx 101011xxx 100100xxx 100101xxx 100110xxx 100111xxx 101000xxx 101001xxx 101010xxx 101011xxx 101100xxx 101101xxx 101110xxx 101111xxx Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 1F0000h–1FFFFFh 200000h–20FFFFh 210000h–21FFFFh 220000h–22FFFFh 230000h–23FFFFh 240000h–24FFFFh 250000h–25FFFFh 260000h–26FFFFh 270000h–27FFFFh 280000h–28FFFFh 290000h–29FFFFh 2A0000h–2AFFFFh 2B0000h–2BFFFFh 2C0000h–2CFFFFh 2D0000h–2DFFFFh 2E0000h–2EFFFFh 2F0000h–2FFFFFh 16-bit Address Range F8000h–FFFFFh F9000h–107FFFh 108000h–10FFFFh 110000h–117FFFh 118000h–11FFFFh 120000h–127FFFh 128000h–12FFFFh 130000h–137FFFh 138000h–13FFFFh 140000h–147FFFh 148000h–14FFFFh 150000h–157FFFh 158000h–15FFFFh 160000h–167FFFh 168000h–16FFFFh 170000h–177FFFh 178000h–17FFFFh Sector SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 A20–A12 110000xxx 110001xxx 110010xxx 110011xxx 100100xxx 110101xxx 110110xxx 110111xxx 111000xxx 111001xxx 111010xxx 111011xxx 111100xxx 111101xxx 111110xxx 111111xxx Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 300000h–30FFFFh 310000h–31FFFFh 320000h–32FFFFh 330000h–33FFFFh 340000h–34FFFFh 350000h–35FFFFh 360000h–36FFFFh 370000h–37FFFFh 380000h–38FFFFh 390000h–39FFFFh 3A0000h–3AFFFFh 3B0000h–3BFFFFh 3C0000h–3CFFFFh 3D0000h–3DFFFFh 3E0000h–3EFFFFh 3F0000h–3FFFFFh 16-bit Address Range 180000h–187FFFh 188000h–18FFFFh 190000h–197FFFh 198000h–19FFFFh 1A0000h–1A7FFFh 1A8000h–1AFFFFh 1B0000h–1B7FFFh 1B8000h–1BFFFFh 1C0000h–1C7FFFh 1C8000h–1CFFFFh 1D0000h–1D7FFFh 1D8000h–1DFFFFh 1E0000h–1E7FFFh 1E8000h–1EFFFFh 1F0000h–1F7FFFh 1F8000h–1FFFFFh Table 10. S29GL064A (Models R1, R2, R8, R9) Sector Addresses (Sheet 1 of 2) Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 A21–A15 0000000 0000001 0000010 0000011 0000100 0000101 0000110 0000111 0001000 0001001 0001010 0001011 0001100 0001101 0001110 0001111 0010000 0010001 0010010 0010011 0010100 0010101 0010110 0010111 0011000 0011001 0011010 0011011 0011100 0011101 0011110 0011111 0100000 0100001 0100010 0100011 0100100 Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 000000–00FFFF 010000–01FFFF 020000–02FFFF 030000–03FFFF 040000–04FFFF 050000–05FFFF 060000–06FFFF 070000–07FFFF 080000–08FFFF 090000–09FFFF 0A0000–0AFFFF 0B0000–0BFFFF 0C0000–0CFFFF 0D0000–0DFFFF 0E0000–0EFFFF 0F0000–0FFFFF 100000–10FFFF 110000–11FFFF 120000–12FFFF 130000–13FFFF 140000–14FFFF 150000–15FFFF 160000–16FFFF 170000–17FFFF 180000–18FFFF 190000–19FFFF 1A0000–1AFFFF 1B0000–1BFFFF 1C0000–1CFFFF 1D0000–1DFFFF 1E0000–1EFFFF 1F0000–1FFFFF 200000–20FFFF 210000–21FFFF 220000–22FFFF 230000–23FFFF 240000–24FFFF 16-bit Address Range 000000–007FFF 008000–00FFFF 010000–017FFF 018000–01FFFF 020000–027FFF 028000–02FFFF 030000–037FFF 038000–03FFFF 040000–047FFF 048000–04FFFF 050000–057FFF 058000–05FFFF 060000–067FFF 068000–06FFFF 070000–077FFF 078000–07FFFF 080000–087FFF 088000–08FFFF 090000–097FFF 098000–09FFFF 0A0000–0A7FFF 0A8000–0AFFFF 0B0000–0B7FFF 0B8000–0BFFFF 0C0000–0C7FFF 0C8000–0CFFFF 0D0000–0D7FFF 0D8000–0DFFFF 0E0000–0E7FFF 0E8000–0EFFFF 0F0000–0F7FFF 0F8000–0FFFFF 100000–107FFF 108000–10FFFF 110000–117FFF 118000–11FFFF 120000–127FFF Sector SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 SA71 SA72 SA73 A21–A15 0100101 0100110 0100111 0101000 0101001 0101010 0101011 0101100 0101101 0101110 0101111 0110000 0110001 0110010 0110011 0110100 0110101 0110110 0110111 0111000 0111001 0111010 0111011 0111100 0111101 0111110 0111111 1000000 1000001 1000010 1000011 1000100 1000101 1000110 1000111 1001000 1001001 Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 250000–25FFFF 260000–26FFFF 270000–27FFFF 280000–28FFFF 290000–29FFFF 2A0000–2AFFFF 2B0000–2BFFFF 2C0000–2CFFFF 2D0000–2DFFFF 2E0000–2EFFFF 2F0000–2FFFFF 300000–30FFFF 310000–31FFFF 320000–32FFFF 330000–33FFFF 340000–34FFFF 350000–35FFFF 360000–36FFFF 370000–37FFFF 380000–38FFFF 390000–39FFFF 3A0000–3AFFFF 3B0000–3BFFFF 3C0000–3CFFFF 3D0000–3DFFFF 3E0000–3EFFFF 3F0000–3FFFFF 400000–40FFFF 410000–41FFFF 420000–42FFFF 430000–43FFFF 440000–44FFFF 450000–45FFFF 460000–46FFFF 470000–47FFFF 480000–48FFFF 490000–49FFFF 16-bit Address Range 128000–12FFFF 130000–137FFF 138000–13FFFF 140000–147FFF 148000–14FFFF 150000–157FFF 158000–15FFFF 160000–167FFF 168000–16FFFF 170000–177FFF 178000–17FFFF 180000–187FFF 188000–18FFFF 190000–197FFF 198000–19FFFF 1A0000–1A7FFF 1A8000–1AFFFF 1B0000–1B7FFF 1B8000–1BFFFF 1C0000–1C7FFF 1C8000–1CFFFF 1D0000–1D7FFF 1D8000–1DFFFF 1E0000–1E7FFF 1E8000–1EFFFF 1F0000–1F7FFF 1F8000–1FFFFF 200000–207FFF 208000–20FFFF 210000–217FFF 218000–21FFFF 220000–227FFF 228000–22FFFF 230000–237FFF 238000–23FFFF 240000–247FFF 248000–24FFFF April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 25 Advance Information Table 10. S29GL064A (Models R1, R2, R8, R9) Sector Addresses (Sheet 2 of 2) Sector SA74 SA75 SA76 SA77 SA78 SA79 SA80 SA81 SA82 SA83 SA84 SA85 SA86 SA87 SA88 SA89 SA90 SA91 SA92 SA93 SA94 SA95 SA96 SA97 SA98 SA99 SA100 A21–A15 1001010 1001011 1001100 1001101 1001110 1001111 1010000 1010001 1010010 1010011 1010100 1010101 1010110 1010111 1011000 1011001 1011010 1011011 1011100 1011101 1011110 1011111 1100000 1100001 1100010 1100011 1100100 Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 4A0000–4AFFFF 4B0000–4BFFFF 4C0000–4CFFFF 4D0000–4DFFFF 4E0000–4EFFFF 4F0000–4FFFFF 500000–50FFFF 510000–51FFFF 520000–52FFFF 530000–53FFFF 540000–54FFFF 550000–55FFFF 560000–56FFFF 570000–57FFFF 580000–58FFFF 590000–59FFFF 5A0000–5AFFFF 5B0000–5BFFFF 5C0000–5CFFFF 5D0000–5DFFFF 5E0000–5EFFFF 5F0000–5FFFFF 600000–60FFFF 610000–61FFFF 620000–62FFFF 630000–63FFFF 640000–64FFFF 16-bit Address Range 250000–257FFF 258000–25FFFF 260000–267FFF 268000–26FFFF 270000–277FFF 278000–27FFFF 280000–287FFF 288000–28FFFF 290000–297FFF 298000–29FFFF 2A0000–2A7FFF 2A8000–2AFFFF 2B0000–2B7FFF 2B8000–2BFFFF 2C0000–2C7FFF 2C8000–2CFFFF 2D0000–2D7FFF 2D8000–2DFFFF 2E0000–2E7FFF 2E8000–2EFFFF 2F0000–2F7FFF 2F8000–2FFFFF 300000–307FFF 308000–30FFFF 310000–317FFF 318000–31FFFF 320000–327FFF Sector SA101 SA102 SA103 SA104 SA105 SA106 SA107 SA108 SA109 SA110 SA111 SA112 SA113 SA114 SA115 SA116 SA117 SA118 SA119 SA120 SA121 SA122 SA123 SA124 SA125 SA126 SA127 A21–A15 1100101 1100110 1100111 1101000 1101001 1101010 1101011 1101100 1101101 1101110 1101111 1110000 1110001 1110010 1110011 1110100 1110101 1110110 1110111 1111000 1111001 1111010 1111011 1111100 1111101 1111110 1111111 Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 650000–65FFFF 660000–66FFFF 670000–67FFFF 680000–68FFFF 690000–69FFFF 6A0000–6AFFFF 6B0000–6BFFFF 6C0000–6CFFFF 6D0000–6DFFFF 6E0000–6EFFFF 6F0000–6FFFFF 700000–70FFFF 710000–71FFFF 720000–72FFFF 730000–73FFFF 740000–74FFFF 750000–75FFFF 760000–76FFFF 770000–77FFFF 780000–78FFFF 790000–79FFFF 7A0000–7AFFFF 7B0000–7BFFFF 7C0000–7CFFFF 7D0000–7DFFFF 7E0000–7EFFFF 7F0000–7FFFFF 16-bit Address Range 328000–32FFFF 330000–337FFF 338000–33FFFF 340000–347FFF 348000–34FFFF 350000–357FFF 358000–35FFFF 360000–367FFF 368000–36FFFF 370000–377FFF 378000–37FFFF 380000–387FFF 388000–38FFFF 390000–397FFF 398000–39FFFF 3A0000–3A7FFF 3A8000–3AFFFF 3B0000–3B7FFF 3B8000–3BFFFF 3C0000–3C7FFF 3C8000–3CFFFF 3D0000–3D7FFF 3D8000–3DFFFF 3E0000–3E7FFF 3E8000–3EFFFF 3F0000–3F7FFF 3F8000–3FFFFF Table 11. S29GL064A (Model R3) Top Boot Sector Addresses (Sheet 1 of 2) Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 A21–A15 0000000xxx 0000001xxx 0000010xxx 0000011xxx 0000100xxx 0000101xxx 0000110xxx 0000111xxx 0001000xxx 0001001xxx 0001010xxx 0001011xxx 0001100xxx 0001101xxx 0001101xxx 0001111xxx 0010000xxx 0010001xxx 0010010xxx 0010011xxx 0010100xxx 0010101xxx 0010110xxx 0010111xxx 0011000xxx 0011001xxx 0011010xxx 0011011xxx 0011000xxx 0011101xxx 0011110xxx 0011111xxx 0100000xxx 0100001xxx Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 16-bit Address Range Sector SA34 SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 A21–A15 0100010xxx 0101011xxx 0100100xxx 0100101xxx 0100110xxx 0100111xxx 0101000xxx 0101001xxx 0101010xxx 0101011xxx 0101100xxx 0101101xxx 0101110xxx 0101111xxx 0110000xxx 0110001xxx 0110010xxx 0110011xxx 0100100xxx 0110101xxx 0110110xxx 0110111xxx 0111000xxx 0111001xxx 0111010xxx 0111011xxx 0111100xxx 0111101xxx 0111110xxx 0111111xxx 1000000xxx 1000001xxx 1000010xxx 1000011xxx Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 220000h–22FFFFh 230000h–23FFFFh 240000h–24FFFFh 250000h–25FFFFh 260000h–26FFFFh 270000h–27FFFFh 280000h–28FFFFh 290000h–29FFFFh 2A0000h–2AFFFFh 2B0000h–2BFFFFh 2C0000h–2CFFFFh 2D0000h–2DFFFFh 2E0000h–2EFFFFh 2F0000h–2FFFFFh 300000h–30FFFFh 310000h–31FFFFh 320000h–32FFFFh 330000h–33FFFFh 340000h–34FFFFh 350000h–35FFFFh 360000h–36FFFFh 370000h–37FFFFh 380000h–38FFFFh 390000h–39FFFFh 3A0000h–3AFFFFh 3B0000h–3BFFFFh 3C0000h–3CFFFFh 3D0000h–3DFFFFh 3E0000h–3EFFFFh 3F0000h–3FFFFFh 400000h–40FFFFh 410000h–41FFFFh 420000h–42FFFFh 430000h–43FFFFh 16-bit Address Range 110000h–117FFFh 118000h–11FFFFh 120000h–127FFFh 128000h–12FFFFh 130000h–137FFFh 138000h–13FFFFh 140000h–147FFFh 148000h–14FFFFh 150000h–157FFFh 158000h–15FFFFh 160000h–167FFFh 168000h–16FFFFh 170000h–177FFFh 178000h–17FFFFh 180000h–187FFFh 188000h–18FFFFh 190000h–197FFFh 198000h–19FFFFh 1A0000h–1A7FFFh 1A8000h–1AFFFFh 1B0000h–1B7FFFh 1B8000h–1BFFFFh 1C0000h–1C7FFFh 1C8000h–1CFFFFh 1D0000h–1D7FFFh 1D8000h–1DFFFFh 1E0000h–1E7FFFh 1E8000h–1EFFFFh 1F0000h–1F7FFFh 1F8000h–1FFFFFh 200000h–207FFFh 208000h–20FFFFh 210000h–217FFFh 218000h–21FFFFh 000000h–00FFFFh 00000h–07FFFh 010000h–01FFFFh 08000h–0FFFFh 020000h–02FFFFh 10000h–17FFFh 030000h–03FFFFh 18000h–1FFFFh 040000h–04FFFFh 20000h–27FFFh 050000h–05FFFFh 28000h–2FFFFh 060000h–06FFFFh 30000h–37FFFh 070000h–07FFFFh 38000h–3FFFFh 080000h–08FFFFh 40000h–47FFFh 090000h–09FFFFh 48000h–4FFFFh 0A0000h–0AFFFFh 50000h–57FFFh 0B0000h–0BFFFFh 58000h–5FFFFh 0C0000h–0CFFFFh 60000h–67FFFh 0D0000h–0DFFFFh 68000h–6FFFFh 0E0000h–0EFFFFh 70000h–77FFFh 0F0000h–0FFFFFh 78000h–7FFFFh 100000h–00FFFFh 80000h–87FFFh 110000h–11FFFFh 88000h–8FFFFh 120000h–12FFFFh 90000h–97FFFh 130000h–13FFFFh 98000h–9FFFFh 140000h–14FFFFh A0000h–A7FFFh 150000h–15FFFFh A8000h–AFFFFh 160000h–16FFFFh B0000h–B7FFFh 170000h–17FFFFh B8000h–BFFFFh 180000h–18FFFFh C0000h–C7FFFh 190000h–19FFFFh C8000h–CFFFFh 1A0000h–1AFFFFh D0000h–D7FFFh 1B0000h–1BFFFFh D8000h–DFFFFh 1C0000h–1CFFFFh E0000h–E7FFFh 1D0000h–1DFFFFh E8000h–EFFFFh 1E0000h–1EFFFFh F0000h–F7FFFh 1F0000h–1FFFFFh F8000h–FFFFFh 200000h–20FFFFh F9000h–107FFFh 210000h–21FFFFh 108000h–10FFFFh 26 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Table 11. S29GL064A (Model R3) Top Boot Sector Addresses (Sheet 2 of 2) Sector SA68 SA69 SA70 SA71 SA72 SA73 SA74 SA75 SA76 SA77 SA78 SA79 SA80 SA81 SA82 SA83 SA84 SA85 SA86 SA87 SA88 SA89 SA90 SA91 SA92 SA93 SA94 SA95 SA96 SA97 SA98 SA99 SA100 SA101 A21–A15 1000100xxx 1000101xxx 1000110xxx 1000111xxx 1001000xxx 1001001xxx 1001010xxx 1001011xxx 1001100xxx 1001101xxx 1001110xxx 1001111xxx 1010000xxx 1010001xxx 1010010xxx 1010011xxx 1010100xxx 1010101xxx 1010110xxx 1010111xxx 1011000xxx 1011001xxx 1011010xxx 1011011xxx 1011100xxx 1011101xxx 1011110xxx 1011111xxx 1100000xxx 1100001xxx 1100010xxx 1100011xxx 1100100xxx 1100101xxx Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 440000h–44FFFFh 450000h–45FFFFh 460000h–46FFFFh 470000h–47FFFFh 480000h–48FFFFh 490000h–49FFFFh 4A0000h–4AFFFFh 4B0000h–4BFFFFh 4C0000h–4CFFFFh 4D0000h–4DFFFFh 4E0000h–4EFFFFh 4F0000h–4FFFFFh 500000h–50FFFFh 510000h–51FFFFh 520000h–52FFFFh 530000h–53FFFFh 540000h–54FFFFh 550000h–55FFFFh 560000h–56FFFFh 570000h–57FFFFh 580000h–58FFFFh 590000h–59FFFFh 5A0000h–5AFFFFh 5B0000h–5BFFFFh 5C0000h–5CFFFFh 5D0000h–5DFFFFh 5E0000h–5EFFFFh 5F0000h–5FFFFFh 600000h–60FFFFh 610000h–61FFFFh 620000h–62FFFFh 630000h–63FFFFh 640000h–64FFFFh 650000h–65FFFFh 16-bit Address Range 220000h–227FFFh 228000h–22FFFFh 230000h–237FFFh 238000h–23FFFFh 240000h–247FFFh 248000h–24FFFFh 250000h–257FFFh 258000h–25FFFFh 260000h–267FFFh 268000h–26FFFFh 270000h–277FFFh 278000h–27FFFFh 280000h–28FFFFh 288000h–28FFFFh 290000h–297FFFh 298000h–29FFFFh 2A0000h–2A7FFFh 2A8000h–2AFFFFh 2B0000h–2B7FFFh 2B8000h–2BFFFFh 2C0000h–2C7FFFh 2C8000h–2CFFFFh 2D0000h–2D7FFFh 2D8000h–2DFFFFh 2E0000h–2E7FFFh 2E8000h–2EFFFFh 2F0000h–2FFFFFh 2F8000h–2FFFFFh 300000h–307FFFh 308000h–30FFFFh 310000h–317FFFh 318000h–31FFFFh 320000h–327FFFh 328000h–32FFFFh Sector SA102 SA103 SA104 SA105 SA106 SA107 SA108 SA109 SA110 SA111 SA112 SA113 SA114 SA115 SA116 SA117 SA118 SA119 SA120 SA121 SA122 SA123 SA124 SA125 SA126 SA127 SA128 SA129 SA130 SA131 SA132 SA133 SA134 A21–A15 1100110xxx 1100111xxx 1101000xxx 1101001xxx 1101010xxx 1101011xxx 1101100xxx 1101101xxx 1101110xxx 1101111xxx 1110000xxx 1110001xxx 1110010xxx 1110011xxx 1110100xxx 1110101xxx 1110110xxx 1110111xxx 1111000xxx 1111001xxx 1111010xxx 1111011xxx 1111100xxx 1111101xxx 1111110xxx 1111111000 1111111001 1111111010 1111111011 1111111100 1111111101 1111111110 1111111111 Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8-bit Address Range 660000h–66FFFFh 670000h–67FFFFh 680000h–68FFFFh 690000h–69FFFFh 6A0000h–6AFFFFh 6B0000h–6BFFFFh 6C0000h–6CFFFFh 6D0000h–6DFFFFh 6E0000h–6EFFFFh 6F0000h–6FFFFFh 700000h–70FFFFh 710000h–71FFFFh 720000h–72FFFFh 730000h–73FFFFh 740000h–74FFFFh 750000h–75FFFFh 760000h–76FFFFh 770000h–77FFFFh 780000h–78FFFFh 790000h–79FFFFh 7A0000h–7AFFFFh 7B0000h–7BFFFFh 7C0000h–7CFFFFh 7D0000h–7DFFFFh 7E0000h–7EFFFFh 7F0000h–7F1FFFh 7F2000h–7F3FFFh 7F4000h–7F5FFFh 7F6000h–7F7FFFh 7F8000h–7F9FFFh 7FA000h–7FBFFFh 7FC000h–7FDFFFh 7FE000h–7FFFFFh 16-bit Address Range 330000h–337FFFh 338000h–33FFFFh 340000h–347FFFh 348000h–34FFFFh 350000h–357FFFh 358000h–35FFFFh 360000h–367FFFh 368000h–36FFFFh 370000h–377FFFh 378000h–37FFFFh 380000h–387FFFh 388000h–38FFFFh 390000h–397FFFh 398000h–39FFFFh 3A0000h–3A7FFFh 3A8000h–3AFFFFh 3B0000h–3B7FFFh 3B8000h–3BFFFFh 3C0000h–3C7FFFh 3C8000h–3CFFFFh 3D0000h–3D7FFFh 3D8000h–3DFFFFh 3E0000h–3E7FFFh 3E8000h–3EFFFFh 3F0000h–3F7FFFh 3F8000h–3F8FFFh 3F9000h–3F9FFFh 3FA000h–3FAFFFh 3FB000h–3FBFFFh 3FC000h–3FCFFFh 3FD000h–3FDFFFh 3FE000h–3FEFFFh 3FF000h–3FFFFFh Table 12. S29GL064A (Model R4) Bottom Boot Sector Addresses (Sheet 1 of 2) A21–A15 0000000000 0000000001 0000000010 0000000011 0000000100 0000000101 0000000110 0000000111 0000001xxx 0000010xxx 0000011xxx 0000100xxx 0000101xxx 0000110xxx 0000111xxx 0001000xxx 0001001xxx 0001010xxx 0001011xxx 0001100xxx 0001101xxx 0001101xxx 0001111xxx 0010000xxx 0010001xxx 0010010xxx 0010011xxx 0101111xxx Sector Size (KB/ Kwords) 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 Sector Sector 8-bit Address Range 16-bit Address Range A21–A15 0010100xxx 0010101xxx 0010110xxx 0010111xxx 0011000xxx 0011001xxx 0011010xxx 0011011xxx 0011000xxx 0011101xxx 0011110xxx 0011111xxx 0100000xxx 0100001xxx 0100010xxx 0101011xxx 0100100xxx 0100101xxx 0100110xxx 0100111xxx 0101000xxx 0101001xxx 0101010xxx 0101011xxx 0101100xxx 0101101xxx 0101110xxx 1011000xxx Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 140000h–14FFFFh 150000h–15FFFFh 160000h–16FFFFh 170000h–17FFFFh 180000h–18FFFFh 190000h–19FFFFh 1A0000h–1AFFFFh 1B0000h–1BFFFFh 1C0000h–1CFFFFh 1D0000h–1DFFFFh 1E0000h–1EFFFFh 1F0000h–1FFFFFh 200000h–20FFFFh 210000h–21FFFFh 220000h–22FFFFh 230000h–23FFFFh 240000h–24FFFFh 250000h–25FFFFh 260000h–26FFFFh 270000h–27FFFFh 280000h–28FFFFh 290000h–29FFFFh 2A0000h–2AFFFFh 2B0000h–2BFFFFh 2C0000h–2CFFFFh 2D0000h–2DFFFFh 2E0000h–2EFFFFh 580000h–58FFFFh 16-bit Address Range A0000h–A7FFFh A8000h–AFFFFh B0000h–B7FFFh B8000h–BFFFFh C0000h–C7FFFh C8000h–CFFFFh D0000h–D7FFFh D8000h–DFFFFh E0000h–E7FFFh E8000h–EFFFFh F0000h–F7FFFh F8000h–FFFFFh F9000h–107FFFh 108000h–10FFFFh 110000h–117FFFh 118000h–11FFFFh 120000h–127FFFh 128000h–12FFFFh 130000h–137FFFh 138000h–13FFFFh 140000h–147FFFh 148000h–14FFFFh 150000h–157FFFh 158000h–15FFFFh 160000h–167FFFh 168000h–16FFFFh 170000h–177FFFh 2C0000h–2C7FFFh SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA54 000000h–001FFFh 00000h–00FFFh 002000h–003FFFh 01000h–01FFFh 004000h–005FFFh 02000h–02FFFh 006000h–007FFFh 03000h–03FFFh 008000h–009FFFh 04000h–04FFFh 00A000h–00BFFFh 05000h–05FFFh 00C000h–00DFFFh 06000h–06FFFh 00E000h–00FFFFFh 07000h–07FFFh 010000h–01FFFFh 08000h–0FFFFh 020000h–02FFFFh 10000h–17FFFh 030000h–03FFFFh 18000h–1FFFFh 040000h–04FFFFh 20000h–27FFFh 050000h–05FFFFh 28000h–2FFFFh 060000h–06FFFFh 30000h–37FFFh 070000h–07FFFFh 38000h–3FFFFh 080000h–08FFFFh 40000h–47FFFh 090000h–09FFFFh 48000h–4FFFFh 0A0000h–0AFFFFh 50000h–57FFFh 0B0000h–0BFFFFh 58000h–5FFFFh 0C0000h–0CFFFFh 60000h–67FFFh 0D0000h–0DFFFFh 68000h–6FFFFh 0E0000h–0EFFFFh 70000h–77FFFh 0F0000h–0FFFFFh 78000h–7FFFFh 100000h–00FFFFh 80000h–87FFFh 110000h–11FFFFh 88000h–8FFFFh 120000h–12FFFFh 90000h–97FFFh 130000h–13FFFFh 98000h–9FFFFh 2F0000h–2FFFFFh 178000h–17FFFFh SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA95 April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 27 Advance Information Table 12. S29GL064A (Model R4) Bottom Boot Sector Addresses (Sheet 2 of 2) A21–A15 0110000xxx 0110001xxx 0110010xxx 0110011xxx 0100100xxx 0110101xxx 0110110xxx 0110111xxx 0111000xxx 0111001xxx 0111010xxx 0111011xxx 0111100xxx 0111101xxx 0111110xxx 0111111xxx 1000000xxx 1000001xxx 1000010xxx 1000011xxx 1000100xxx 1000101xxx 1000110xxx 1000111xxx 1001000xxx 1001001xxx 1001010xxx 1001011xxx 1001100xxx 1001101xxx 1001110xxx 1001111xxx 1010000xxx 1010001xxx 1010010xxx 1010011xxx 1010100xxx 1010101xxx 1010110xxx 1010111xxx Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 Sector Sector 8-bit Address Range 16-bit Address Range A21–A15 Sector Size (KB/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8-bit Address Range 590000h–59FFFFh 5A0000h–5AFFFFh 5B0000h–5BFFFFh 5C0000h–5CFFFFh 5D0000h–5DFFFFh 5E0000h–5EFFFFh 5F0000h–5FFFFFh 600000h–60FFFFh 610000h–61FFFFh 620000h–62FFFFh 630000h–63FFFFh 640000h–64FFFFh 650000h–65FFFFh 660000h–66FFFFh 670000h–67FFFFh 680000h–68FFFFh 690000h–69FFFFh 6A0000h–6AFFFFh 6B0000h–6BFFFFh 6C0000h–6CFFFFh 6D0000h–6DFFFFh 6E0000h–6EFFFFh 6F0000h–6FFFFFh 700000h–70FFFFh 710000h–71FFFFh 720000h–72FFFFh 730000h–73FFFFh 740000h–74FFFFh 750000h–75FFFFh 760000h–76FFFFh 770000h–77FFFFh 780000h–78FFFFh 790000h–79FFFFh 7A0000h–7AFFFFh 7B0000h–7BFFFFh 7C0000h–7CFFFFh 7D0000h–7DFFFFh 7E0000h–7EFFFFh 7F0000h–7FFFFFh 16-bit Address Range 2C8000h–2CFFFFh 2D0000h–2D7FFFh 2D8000h–2DFFFFh 2E0000h–2E7FFFh 2E8000h–2EFFFFh 2F0000h–2FFFFFh 2F8000h–2FFFFFh 300000h–307FFFh 308000h–30FFFFh 310000h–317FFFh 318000h–31FFFFh 320000h–327FFFh 328000h–32FFFFh 330000h–337FFFh 338000h–33FFFFh 340000h–347FFFh 348000h–34FFFFh 350000h–357FFFh 358000h–35FFFFh 360000h–367FFFh 368000h–36FFFFh 370000h–377FFFh 378000h–37FFFFh 380000h–387FFFh 388000h–38FFFFh 390000h–397FFFh 398000h–39FFFFh 3A0000h–3A7FFFh 3A8000h–3AFFFFh 3B0000h–3B7FFFh 3B8000h–3BFFFFh 3C0000h–3C7FFFh 3C8000h–3CFFFFh 3D0000h–3D7FFFh 3D8000h–3DFFFFh 3E0000h–3E7FFFh 3E8000h–3EFFFFh 3F0000h–3F7FFFh 3F8000h–3FFFFFh SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 SA71 SA72 SA73 SA74 SA75 SA76 SA77 SA78 SA79 SA80 SA81 SA82 SA83 SA84 SA85 SA86 SA87 SA88 SA89 SA90 SA91 SA92 SA93 SA94 300000h–30FFFFh 180000h–187FFFh SA96 1011001xxx 310000h–31FFFFh 188000h–18FFFFh SA97 1011010xxx 320000h–32FFFFh 190000h–197FFFh SA98 1011011xxx 330000h–33FFFFh 198000h–19FFFFh SA99 1011100xxx 340000h–34FFFFh 1A0000h–1A7FFFh SA100 1011101xxx 350000h–35FFFFh 1A8000h–1AFFFFh SA101 1011110xxx 360000h–36FFFFh 1B0000h–1B7FFFh SA102 1011111xxx 370000h–37FFFFh 1B8000h–1BFFFFh SA103 1100000xxx 380000h–38FFFFh 1C0000h–1C7FFFh SA104 1100001xxx 390000h–39FFFFh 1C8000h–1CFFFFh SA105 1100010xxx 3A0000h–3AFFFFh 1D0000h–1D7FFFh SA106 1100011xxx 3B0000h–3BFFFFh 1D8000h–1DFFFFh SA107 1100100xxx 3C0000h–3CFFFFh 1E0000h–1E7FFFh SA108 1100101xxx 3D0000h–3DFFFFh 1E8000h–1EFFFFh SA109 1100110xxx 3E0000h–3EFFFFh 1F0000h–1F7FFFh SA110 1100111xxx 3F0000h–3FFFFFh 1F8000h–1FFFFFh SA111 1101000xxx 400000h–40FFFFh 200000h–207FFFh SA112 1101001xxx 410000h–41FFFFh 208000h–20FFFFh SA113 1101010xxx 420000h–42FFFFh 210000h–217FFFh SA114 1101011xxx 430000h–43FFFFh 218000h–21FFFFh SA115 1101100xxx 440000h–44FFFFh 220000h–227FFFh SA116 1101101xxx 450000h–45FFFFh 228000h–22FFFFh SA117 1101110xxx 460000h–46FFFFh 230000h–237FFFh SA118 1101111xxx 470000h–47FFFFh 238000h–23FFFFh SA119 1110000xxx 480000h–48FFFFh 240000h–247FFFh SA120 1110001xxx 490000h–49FFFFh 248000h–24FFFFh SA121 1110010xxx 4A0000h–4AFFFFh 250000h–257FFFh SA122 1110011xxx 4B0000h–4BFFFFh 258000h–25FFFFh SA123 1110100xxx 4C0000h–4CFFFFh 260000h–267FFFh SA124 1110101xxx 4D0000h–4DFFFFh 268000h–26FFFFh SA125 1110110xxx 4E0000h–4EFFFFh 270000h–277FFFh SA126 1110111xxx 4F0000h–4FFFFFh 278000h–27FFFFh SA127 1111000xxx 500000h–50FFFFh 280000h–28FFFFh SA128 1111001xxx 510000h–51FFFFh 288000h–28FFFFh SA129 1111010xxx 520000h–52FFFFh 290000h–297FFFh SA130 1111011xxx 530000h–53FFFFh 298000h–29FFFFh SA131 1111100xxx 540000h–54FFFFh 2A0000h–2A7FFFh SA132 1111101xxx 550000h–55FFFFh 2A8000h–2AFFFFh SA133 1111110xxx 560000h–56FFFFh 2B0000h–2B7FFFh SA134 1111111000 570000h–57FFFFh 2B8000h–2BFFFFh Table 13. S29GL064A (Model R5) Sector Addresses (Sheet 1 of 2) Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA42 A21–A15 0000000 0000001 0000010 0000011 0000100 0000101 0000110 0000111 0001000 0001001 0001010 0001011 0001100 0001101 0001110 0001111 0010000 0010001 0010010 0010011 0010100 0101010 16-bit Address Range 000000–007FFF 008000–00FFFF 010000–017FFF 018000–01FFFF 020000–027FFF 028000–02FFFF 030000–037FFF 038000–03FFFF 040000–047FFF 048000–04FFFF 050000–057FFF 058000–05FFFF 060000–067FFF 068000–06FFFF 070000–077FFF 078000–07FFFF 080000–087FFF 088000–08FFFF 090000–097FFF 098000–09FFFF 0A0000–0A7FFF 250000–257FFF Sector SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA85 A21–A15 0010101 0010110 0010111 0011000 0011001 0011010 0011011 0011100 0011101 0011110 0011111 0100000 0100001 0100010 0100011 0100100 0100101 0100110 0100111 0101000 0101001 1010101 16-bit Address Range 0A8000–0AFFFF 0B0000–0B7FFF 0B8000–0BFFFF 0C0000–0C7FFF 0C8000–0CFFFF 0D0000–0D7FFF 0D8000–0DFFFF 0E0000–0E7FFF 0E8000–0EFFFF 0F0000–0F7FFF 0F8000–0FFFFF 200000–207FFF 208000–20FFFF 210000–217FFF 218000–21FFFF 220000–227FFF 228000–22FFFF 230000–237FFF 238000–23FFFF 240000–247FFF 248000–24FFFF 1A8000–1AFFFF 28 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Table 13. S29GL064A (Model R5) Sector Addresses (Sheet 2 of 2) Sector SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 SA71 SA72 SA73 SA74 SA75 SA76 SA77 SA78 SA79 SA80 SA81 SA82 SA83 SA84 A21–A15 0101011 0101100 0101101 0101110 0101111 0110000 0110001 0110010 0110011 0110100 0110101 0110110 0110111 0111000 0111001 0111010 0111011 0111100 0111101 0111110 0111111 1000000 1000001 1000010 1000011 1000100 1000101 1000110 1000111 1001000 1001001 1001010 1001011 1001100 1001101 1001110 1001111 1010000 1010001 1010010 1010011 1010100 16-bit Address Range 258000–25FFFF 260000–267FFF 268000–26FFFF 270000–277FFF 278000–27FFFF 280000–287FFF 288000–28FFFF 290000–297FFF 298000–29FFFF 2A0000–2A7FFF 2A8000–2AFFFF 2B0000–2B7FFF 2B8000–2BFFFF 2C0000–2C7FFF 2C8000–2CFFFF 2D0000–2D7FFF 2D8000–2DFFFF 2E0000–2E7FFF 2E8000–2EFFFF 2F0000–2F7FFF 2F8000–2FFFFF 100000–107FFF 108000–10FFFF 110000–117FFF 118000–11FFFF 120000–127FFF 128000–12FFFF 130000–137FFF 138000–13FFFF 140000–147FFF 148000–14FFFF 150000–157FFF 158000–15FFFF 160000–167FFF 168000–16FFFF 170000–177FFF 178000–17FFFF 180000–187FFF 188000–18FFFF 190000–197FFF 198000–19FFFF 1A0000–1A7FFF Sector SA86 SA87 SA88 SA89 SA90 SA91 SA92 SA93 SA94 SA95 SA96 SA97 SA98 SA99 SA100 SA101 SA102 SA103 SA104 SA105 SA106 SA107 SA108 SA109 SA110 SA111 SA112 SA113 SA114 SA115 SA116 SA117 SA118 SA119 SA120 SA121 SA122 SA123 SA124 SA125 SA126 SA127 A21–A15 1010110 1010111 1011000 1011001 1011010 1011011 1011100 1011101 1011110 1011111 1100000 1100001 1100010 1100011 1100100 1100101 1100110 1100111 1101000 1101001 1101010 1101011 1101100 1101101 1101110 1101111 1110000 1110001 1110010 1110011 1110100 1110101 1110110 1110111 1111000 1111001 1111010 1111011 1111100 1111101 1111110 1111111 16-bit Address Range 1B0000–1B7FFF 1B8000–1BFFFF 1C0000–1C7FFF 1C8000–1CFFFF 1D0000–1D7FFF 1D8000–1DFFFF 1E0000–1E7FFF 1E8000–1EFFFF 1F0000–1F7FFF 1F8000–1FFFFF 300000–307FFF 308000–30FFFF 310000–317FFF 318000–31FFFF 320000–327FFF 328000–32FFFF 330000–337FFF 338000–33FFFF 340000–347FFF 348000–34FFFF 350000–357FFF 358000–35FFFF 360000–367FFF 368000–36FFFF 370000–377FFF 378000–37FFFF 380000–387FFF 388000–38FFFF 390000–397FFF 398000–39FFFF 3A0000–3A7FFF 3A8000–3AFFFF 3B0000–3B7FFF 3B8000–3BFFFF 3C0000–3C7FFF 3C8000–3CFFFF 3D0000–3D7FFF 3D8000–3DFFFF 3E0000–3E7FFF 3E8000–3EFFFF 3F0000–3F7FFF 3F8000–3FFFFF Table 14. S29GL064A (Models R6, R7) Sector Addresses (Sheet 1 of 2) Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA42 A21–A15 0000000 0000001 0000010 0000011 0000100 0000101 0000110 0000111 0001000 0001001 0001010 0001011 0001100 0001101 0001110 0001111 0010000 0010001 0010010 0010011 0010100 0101010 16-bit Address Range 000000–007FFF 008000–00FFFF 010000–017FFF 018000–01FFFF 020000–027FFF 028000–02FFFF 030000–037FFF 038000–03FFFF 040000–047FFF 048000–04FFFF 050000–057FFF 058000–05FFFF 060000–067FFF 068000–06FFFF 070000–077FFF 078000–07FFFF 080000–087FFF 088000–08FFFF 090000–097FFF 098000–09FFFF 0A0000–0A7FFF 250000–257FFF Sector SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA85 A21–A15 0010101 0010110 0010111 0011000 0011001 0011010 0011011 0011100 0011101 0011110 0011111 0100000 0100001 0100010 0100011 0100100 0100101 0100110 0100111 0101000 0101001 1010101 16-bit Address Range 0A8000–0AFFFF 0B0000–0B7FFF 0B8000–0BFFFF 0C0000–0C7FFF 0C8000–0CFFFF 0D0000–0D7FFF 0D8000–0DFFFF 0E0000–0E7FFF 0E8000–0EFFFF 0F0000–0F7FFF 0F8000–0FFFFF 200000–207FFF 208000–20FFFF 210000–217FFF 218000–21FFFF 220000–227FFF 228000–22FFFF 230000–237FFF 238000–23FFFF 240000–247FFF 248000–24FFFF 1A8000–1AFFFF April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 29 Advance Information Table 14. S29GL064A (Models R6, R7) Sector Addresses (Sheet 2 of 2) Sector SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 SA71 SA72 SA73 SA74 SA75 SA76 SA77 SA78 SA79 SA80 SA81 SA82 SA83 SA84 A21–A15 0101011 0101100 0101101 0101110 0101111 0110000 0110001 0110010 0110011 0110100 0110101 0110110 0110111 0111000 0111001 0111010 0111011 0111100 0111101 0111110 0111111 1000000 1000001 1000010 1000011 1000100 1000101 1000110 1000111 1001000 1001001 1001010 1001011 1001100 1001101 1001110 1001111 1010000 1010001 1010010 1010011 1010100 16-bit Address Range 258000–25FFFF 260000–267FFF 268000–26FFFF 270000–277FFF 278000–27FFFF 280000–287FFF 288000–28FFFF 290000–297FFF 298000–29FFFF 2A0000–2A7FFF 2A8000–2AFFFF 2B0000–2B7FFF 2B8000–2BFFFF 2C0000–2C7FFF 2C8000–2CFFFF 2D0000–2D7FFF 2D8000–2DFFFF 2E0000–2E7FFF 2E8000–2EFFFF 2F0000–2F7FFF 2F8000–2FFFFF 100000–107FFF 108000–10FFFF 110000–117FFF 118000–11FFFF 120000–127FFF 128000–12FFFF 130000–137FFF 138000–13FFFF 140000–147FFF 148000–14FFFF 150000–157FFF 158000–15FFFF 160000–167FFF 168000–16FFFF 170000–177FFF 178000–17FFFF 180000–187FFF 188000–18FFFF 190000–197FFF 198000–19FFFF 1A0000–1A7FFF Sector SA86 SA87 SA88 SA89 SA90 SA91 SA92 SA93 SA94 SA95 SA96 SA97 SA98 SA99 SA100 SA101 SA102 SA103 SA104 SA105 SA106 SA107 SA108 SA109 SA110 SA111 SA112 SA113 SA114 SA115 SA116 SA117 SA118 SA119 SA120 SA121 SA122 SA123 SA124 SA125 SA126 SA127 A21–A15 1010110 1010111 1011000 1011001 1011010 1011011 1011100 1011101 1011110 1011111 1100000 1100001 1100010 1100011 1100100 1100101 1100110 1100111 1101000 1101001 1101010 1101011 1101100 1101101 1101110 1101111 1110000 1110001 1110010 1110011 1110100 1110101 1110110 1110111 1111000 1111001 1111010 1111011 1111100 1111101 1111110 1111111 16-bit Address Range 1B0000–1B7FFF 1B8000–1BFFFF 1C0000–1C7FFF 1C8000–1CFFFF 1D0000–1D7FFF 1D8000–1DFFFF 1E0000–1E7FFF 1E8000–1EFFFF 1F0000–1F7FFF 1F8000–1FFFFF 300000–307FFF 308000–30FFFF 310000–317FFF 318000–31FFFF 320000–327FFF 328000–32FFFF 330000–337FFF 338000–33FFFF 340000–347FFF 348000–34FFFF 350000–357FFF 358000–35FFFF 360000–367FFF 368000–36FFFF 370000–377FFF 378000–37FFFF 380000–387FFF 388000–38FFFF 390000–397FFF 398000–39FFFF 3A0000–3A7FFF 3A8000–3AFFFF 3B0000–3B7FFF 3B8000–3BFFFF 3C0000–3C7FFF 3C8000–3CFFFF 3D0000–3D7FFF 3D8000–3DFFFF 3E0000–3E7FFF 3E8000–3EFFFF 3F0000–3F7FFF 3F8000–3FFFFF Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector group protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID on address pin A9. Address pins A6, A3, A2, A1, and A0 must be as shown in Table 15 on page 31. In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits (see Table 7-Table 25). Table 15 on page 31 shows the remaining address bits that are don’t care. When all necessary bits are set as required, the programming equipment may then read the corresponding identifier code on DQ7–DQ0. To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Table 30 on page 54 and 30 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Table 31 on page 55. This method does not require VID. Refer to the Autoselect Command Sequence section for more information. Table 15. Description Autoselect Codes, (High Voltage Method) DQ8 to DQ15 BYTE# = VIH 00 22 22 22 22 22 22 BYTE# = VIL X X X X X X X R1, R2, R8, R9 01h 7Eh 0Ch 01h 7Eh 1Dh 00h DQ7 to DQ0 Model Number R3, R4 01h 7Eh 10h 00h (-R4, bottom boot) 01h (-R3, top boot) 7Eh 1Ah 00h (-R4, bottom boot) 01h (-R3, top boot) R5, R6, R7 01h 7Eh 13h 01h A22 A14 A8 A5 A3 CE# OE# WE# to to A9 to A6 to to A1 A0 A15 A10 A7 A4 A2 L L H X X VID X L X L L H H L H H L L H H L H H L H L H H L H S29GL064A Manufacturer ID: Spansion Products Cycle 1 Cycle 2 Cycle 3 Cycle 1 Cycle 2 Cycle 3 L L H X X VID X L X S29GL032A L L H X X VID X L X S29GL016A Cycle 1 L L H X X VID X X X X L H 22 X C4h (-R2, bottom boot) 49h (-R1, top boot) Sector Group Protection Verification Secured Silicon Sector Indicator Bit (DQ7), WP# protects highest address sector Secured Silicon Sector Indicator Bit (DQ7), WP# protects lowest address sector L L H SA X VID X L X L H L X X 01h (protected), 00h (unprotected) For S29GL064A and S29GL032A: 99h (factory locked), 19h (not factory locked) For S29GL016A: 94h (factory locked), 14h (not factory locked) For S29GL064A and S29GL032A: 89h (factory locked), 09h (not factory locked) For S29GL016A: 84h (factory locked), 04h (not factory locked) L L H X X VID X L X L H H X X L L H X X VID X L X L H H X X Legend: L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care. Sector Group Protection and Unprotection The hardware sector group protection feature disables both program and erase operations in any sector group (see Tables 14 – 25). The hardware sector group unprotection feature re-enables both program and erase operations in previously protected sector groups. Sector group protection/unprotection can be implemented via two methods. Sector protection/unprotection requires VID on the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 2, on page 36 shows the algorithms and Figure 24, on page 80 shows the timing diagram. This method uses standard microprocessor bus cycle timing. For sector group unprotect, all unprotected sector groups must first be protected prior to the first sector group unprotect write cycle. The device is shipped with all sector groups unprotected. Spansion offers the option of programming and protecting sector groups at its factory prior to shipping the device through Spansion Programming Service. Contact a Spansion representative for details. It is possible to determine whether a sector group is protected or unprotected. See Autoselect Mode on page 30 for details. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 31 Advance Information Table 16. S29GL016A (Model R1) Sector Group Protection/Unprotection Addresses Sector SA0-SA3 SA4-SA7 SA8-SA11 SA12-SA15 SA16-SA19 SA20-SA23 SA24-SA27 SA28-SA30 A19–A12 000XXXXXh 001XXXXXh 010XXXXXh 011XXXXXh 100XXXXXh 101XXXXXh 110XXXXXh 11100XXXh 11101XXXh 11110XXXh Sector/Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 192 (3x64) Sector SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 A19–A12 11111000h 11111001h 11111010h 11111011h 11111100h 11111101h 11111110h 11111111h Sector/Sector Block Size (Kbytes) 8 8 8 8 8 8 8 8 Table 17. S29GL016A (Model R2) Sector Group Protection/Unprotection Addresses Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 A19–A12 00000000h 00000001h 00000010h 00000011h 00000100h 00000101h 00000110h 00000111h Sector/Sector Block Size (Kbytes) 8 8 8 8 8 8 8 8 Sector A19–A12 00001XXXh 00010XXXh 00011XXXh 001XXXXXh 010XXXXXh 011XXXXXh 100XXXXXh 101XXXXXh 110XXXXXh Sector/Sector Block Size (Kbytes) 192 (3x64) 256 256 256 256 256 256 (4x64) (4x64) (4x64) (4x64) (4x64) (4x64) SA8–SA10 SA11–SA14 SA15–SA18 SA19–SA22 SA23–SA26 SA27-SA30 SA31-SA34 Table 18. S29GL032A (Models R1, R2) Sector Group Protection/Unprotection Addresses Sector SA0 SA1 SA2 SA3 SA4–SA7 SA8–SA11 A20–A15 000000 000001 000010 000011 0001xx 0010xx Sector /Sector Block Size (Kbytes) 64 64 64 64 256 (4x64) 256 (4x64) Sector SA12–SA15 SA16–SA19 SA20–SA23 SA24–SA27 SA28–SA31 SA32–SA35 A20–A15 0011xx 0100xx 0101xx 0110xx 0111xx 1000xx Sector /Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) Sector SA36–SA39 SA40–SA43 SA44–SA47 SA48–SA51 SA52–SA55 A20–A15 1001xx 1010xx 1011xx 1100xx 1101xx Sector /Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) Sector SA56–SA59 SA60 SA61 SA62 SA63 A20–A15 1110xx 111100 111101 111110 111111 Sector /Sector Block Size (Kbytes) 256 (4x64) 64 64 64 64 Table 19. S29GL032A (Model R3) Sector Group Protection/Unprotection Address Table Sector SA0-SA3 SA4-SA7 SA8-SA11 SA12-SA15 SA16-SA19 SA20-SA23 SA24-SA27 SA28-SA31 SA32–SA35 A20–A12 0000XXXXXh 0001XXXXXh 0010XXXXXh 0011XXXXXh 0100XXXXXh 0101XXXXXh 0110XXXXXh 0111XXXXXh 1000XXXXXh Sector/Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) Sector SA36–SA39 SA40–SA43 SA44–SA47 SA48–SA51 SA52-SA55 SA56-SA59 SA60-SA62 A20–A12 1001XXXXXh 1010XXXXXh 1011XXXXXh 1100XXXXXh 1101XXXXXh 1110XXXXXh 111100XXXh 111101XXXh 111110XXXh Sector/Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 192 (3x64) Sector SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 A20–A12 111111000h 111111001h 111111010h 111111011h 111111100h 111111101h 111111110h 111111111h Sector/Sector Block Size (Kbytes) 8 8 8 8 8 8 8 8 32 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Table 20. S29GL032A (Model R4) Sector Group Protection/Unprotection Address Table Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 A20–A12 000000000h 000000001h 000000010h 000000011h 000000100h 000000101h 000000110h 000000111h Sector/Sector Block Size (Kbytes) 8 8 8 8 8 8 8 8 Sector A20–A12 000001XXXh 000010XXXh 000011XXXh 0001XXXXXh 0010XXXXXh 0011XXXXXh 0100XXXXXh 0101XXXXXh 0110XXXXXh Sector/Sector Block Size (Kbytes) 192 (3x64) 256 256 256 256 256 256 (4x64) (4x64) (4x64) (4x64) (4x64) (4x64) Sector SA35-SA38 SA39-SA42 SA43-SA46 SA47-SA50 SA51-SA54 SA55–SA58 SA59–SA62 SA63–SA66 SA67–SA70 A20–A12 0111XXXXXh 1000XXXXXh 1001XXXXXh 1010XXXXXh 1011XXXXXh 1100XXXXXh 1101XXXXXh 1110XXXXXh 1111XXXXXh Sector/Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) SA8–SA10 SA11–SA14 SA15–SA18 SA19–SA22 SA23–SA26 SA27-SA30 SA31-SA34 Table 21. S29GL064A (Models R1, R2, R8, R9) Sector Group Protection/Unprotection Addresses Sector SA0 SA1 SA2 SA3 SA4–SA7 SA8–SA11 SA12–SA15 SA16–SA19 SA20–SA23 SA24–SA27 A21–A15 0000000 0000001 0000010 0000011 00001xx 00010xx 00011xx 00100xx 00101xx 00110xx Sector/ Sector Block Size (Kbytes) 64 64 64 64 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) Sector SA28–SA31 SA32–SA35 SA36–SA39 SA40–SA43 SA44–SA47 SA48–SA51 SA52–SA55 SA56–SA59 SA60–SA63 SA64–SA67 A21–A15 00111xx 01000xx 01001xx 01010xx 01011xx 01100xx 01101xx 01110xx 01111xx 10000xx Sector/ Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) Sector SA68–SA71 SA72–SA75 SA76–SA79 SA80–SA83 SA84–SA87 SA88–SA91 SA92–SA95 SA96–SA99 SA100–SA103 SA104–SA107 A21–A15 10001xx 10010xx 10011xx 10100xx 10101xx 10110xx 10111xx 11000xx 11001xx 11010xx Sector/ Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) Sector SA108–SA111 SA112–SA115 SA116–SA119 SA120–SA123 SA124 SA125 SA126 SA127 A21–A15 11011xx 11100xx 11101xx 11110xx 1111100 1111101 1111110 1111111 Sector/ Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 64 64 64 64 Table 22. S29GL064A (Model R3) Top Boot Sector Protection/Unprotection Addresses Sector SA0-SA3 SA4-SA7 SA8-SA11 SA12-SA15 SA16-SA19 SA20-SA23 SA24-SA27 SA28-SA31 SA32-SA35 SA36-SA39 SA40-SA43 SA44-SA47 SA48-SA51 SA52-SA55 A21–A12 00000XXXXX 00001XXXXX 00010XXXXX 00011XXXXX 00100XXXXX 00101XXXXX 00110XXXXX 00111XXXXX 01000XXXXX 01001XXXXX 01010XXXXX 01011XXXXX 01100XXXXX 01101XXXXX Sector/Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 256 256 256 256 256 256 256 256 256 (4x64) (4x64) (4x64) (4x64) (4x64) (4x64) (4x64) (4x64) (4x64) (4x64) Sector SA56-SA59 SA60-SA63 SA64-SA67 SA68-SA71 SA72-SA75 SA76-SA79 SA80-SA83 SA84-SA87 SA88-SA91 SA92-SA95 SA96-SA99 SA100-SA103 SA104-SA107 SA108-SA111 A20–A12 01110XXXXX 01111XXXXX 10000XXXXX 10001XXXXX 10010XXXXX 10011XXXXX 10100XXXXX 10101XXXXX 10110XXXXX 10111XXXXX 11000XXXXX 11001XXXXX 11010XXXXX 11011XXXXX Sector/Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 256 256 256 256 256 256 256 256 256 (4x64) (4x64) (4x64) (4x64) (4x64) (4x64) (4x64) (4x64) (4x64) (4x64) Sector SA112-SA115 SA116-SA119 SA120-SA123 SA124-SA126 SA127 SA128 SA129 SA130 SA131 SA132 SA133 SA134 A20–A12 11100XXXXX 11101XXXXX 11110XXXXX 1111100XXX 1111101XXX 1111110XXX 1111111000 1111111001 1111111010 1111111011 1111111100 1111111101 1111111110 1111111111 Sector/Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 192 (3x64) 8 8 8 8 8 8 8 8 April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 33 Advance Information Table 23. S29GL064A (Model R4) Bottom Boot Sector Protection/Unprotection Addresses Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8–SA10 SA11–SA14 SA15–SA18 SA19–SA22 SA23–SA26 SA27-SA30 A21–A12 0000000000 0000000001 0000000010 0000000011 0000000100 0000000101 0000000110 0000000111 0000001XXX, 0000010XXX, 0000011XXX, 00001XXXXX 00010XXXXX 00011XXXXX 00100XXXXX 00101XXXXX Sector/Sector Block Size (Kbytes) 8 8 8 8 8 8 8 8 192 (3x64) 256 256 256 256 256 (4x64) (4x64) (4x64) (4x64) (4x64) Sector SA31-SA34 SA35-SA38 SA39-SA42 SA43-SA46 SA47-SA50 SA51-SA54 SA55–SA58 SA59–SA62 SA63–SA66 SA67–SA70 SA71–SA74 SA75–SA78 SA79–SA82 SA83–SA86 A20–A12 00110XXXXX 00111XXXXX 01000XXXXX 01001XXXXX 01010XXXXX 01011XXXXX 01100XXXXX 01101XXXXX 01110XXXXX 01111XXXXX 10000XXXXX 10001XXXXX 10010XXXXX 10011XXXXX Sector/Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 256 256 256 256 (4x64) (4x64) (4x64) (4x64) (4x64) Sector SA87–SA90 SA91–SA94 SA95–SA98 SA99–SA102 SA103–SA106 SA107–SA110 SA111–SA114 SA115–SA118 SA119–SA122 SA123–SA126 SA127–SA130 SA131–SA134 A20–A12 10100XXXXX 10101XXXXX 10110XXXXX 10111XXXXX 11000XXXXX 11001XXXXX 11010XXXXX 11011XXXXX 11100XXXXX 11101XXXXX 11110XXXXX 11111XXXXX Sector/Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) Table 24. S29GL064A (Model R5) Sector Group Protection/Unprotection Addresses Sector SA0–SA3 SA4–SA7 SA8–SA11 SA12–SA15 SA16–SA19 SA20–SA23 SA24–SA27 SA28–SA31 A21–A15 00000 00001 00010 00011 00100 00101 00110 00111 Sector/ Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) Sector SA32–SA35 SA36–SA39 SA40–SA43 SA44–SA47 SA48–SA51 SA52–SA55 SA56–SA59 SA60–SA63 A21–A15 01000 01001 01010 01011 01100 01101 01110 01111 Sector/ Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) Sector SA64–SA67 SA68–SA71 SA72–SA75 SA76–SA79 SA80–SA83 SA84–SA87 SA88–SA91 SA92–SA95 A21–A15 10000 10001 10010 10011 10100 10101 10110 10111 Sector/ Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) Sector SA96–SA99 SA100–SA103 SA104–SA107 SA108–SA111 SA112–SA115 SA116–SA119 SA120–SA123 SA124–SA127 A21–A15 11000 11001 11010 11011 11100 11101 11110 11111 Sector/ Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) Table 25. S29GL064A (Models R6, R7) Sector Group Protection/Unprotection Addresses Sector SA0–SA3 SA4–SA7 SA8–SA11 SA12–SA15 SA16–SA19 SA20–SA23 SA24–SA27 SA28–SA31 A21–A15 00000 00001 00010 00011 00100 00101 00110 00111 Sector/ Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) Sector SA32–SA35 SA36–SA39 SA40–SA43 SA44–SA47 SA48–SA51 SA52–SA55 SA56–SA59 SA60–SA63 A21–A15 01000 01001 01010 01011 01100 01101 01110 01111 Sector/ Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) Sector SA64–SA67 SA68–SA71 SA72–SA75 SA76–SA79 SA80–SA83 SA84–SA87 SA88–SA91 SA92–SA95 A21–A15 10000 10001 10010 10011 10100 10101 10110 10111 Sector/ Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) Sector SA96–SA99 SA100–SA103 SA104–SA107 SA108–SA111 SA112–SA115 SA116–SA119 SA120–SA123 SA124–SA127 A21–A15 11000 11001 11010 11011 11100 11101 11110 11111 Sector/ Sector Block Size (Kbytes) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 256 (4x64) 34 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Temporary Sector Group Unprotect This feature allows temporary unprotection of previously protected sector groups to change data in-system. The Sector Group Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected sector groups can be programmed or erased by selecting the sector group addresses. Once VID is removed from the RESET# pin, all the previously protected sector groups are protected again. Figure 1 shows the algorithm, and Figure 22, on page 76 shows the timing diagrams, for this feature. START RESET# = VID (Note 1) Perform Erase or Program Operations RESET# = VIH Temporary Sector Group Unprotect Completed (Note 2) Notes: 1. All protected sector groups unprotected (If WP# = VIL, the highest or lowest address sector remains protected for uniform sector devices; the top or bottom two address sectors remains protected for boot sector devices). 2. All previously protected sector groups are protected once again. Figure 1. Temporary Sector Group Unprotect Operation April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 35 Advance Information START PLSCNT = 1 RESET# = VID Wait 1 µs Protect all sector groups: The indicated portion of the sector group protect algorithm must be performed for all unprotected sector groups prior to issuing the first sector group unprotect address START PLSCNT = 1 RESET# = VID Wait 1 µs Temporary Sector Group Unprotect Mode No First Write Cycle = 60h? First Write Cycle = 60h? No Temporary Sector Group Unprotect Mode Yes Set up sector group address No Yes All sector groups protected? Yes Set up first sector group address Sector Group Unprotect: Write 60h to sector group address with A6–A0 = 1xx0010 Reset PLSCNT = 1 Sector Group Protect: Write 60h to sector group address with A6–A0 = 0xx0010 Wait 150 µs Increment PLSCNT Verify Sector Group Protect: Write 40h to sector group address with A6–A0 = 0xx0010 Wait 15 ms Read from sector group address with A6–A0 = 0xx0010 No No PLSCNT = 25? Data = 01h? Increment PLSCNT Verify Sector Group Unprotect: Write 40h to sector group address with A6–A0 = 1xx0010 Yes Yes Protect another sector group? No Remove VID from RESET# Yes Read from sector group address with A6–A0 = 1xx0010 No Set up next sector group address Data = 00h? No PLSCNT = 1000? Yes Device failed Yes Device failed Write reset command Last sector group verified? Yes Remove VID from RESET# No Sector Group Protect Algorithm Sector Group Protect complete Sector Group Unprotect Algorithm Write reset command Sector Group Unprotect complete Figure 2. In-System Sector Group Protect/Unprotect Algorithms 36 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Secured Silicon Sector Flash Memory Region The Secured Silicon Sector feature provides a Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN). The Secured Silicon Sector is 256 bytes in length, and uses a Secured Silicon Sector Indicator Bit (DQ7) to indicate whether or not the Secured Silicon Sector is locked when shipped from the factory. This bit is permanently set at the factory and cannot be changed, which prevents cloning of a factory locked part. This ensures the security of the ESN once the product is shipped to the field. The factory offers the device with the Secured Silicon Sector either customer lockable (standard shipping option) or factory locked (contact a Spansion sales representative for ordering information). The customer-lockable version is shipped with the Secured Silicon Sector unprotected, allowing customers to program the sector after receiving the device. The customer-lockable version also contains the Secured Silicon Sector Indicator Bit permanently set to a 0. The factory-locked version is always protected when shipped from the factory, and has the Secured Silicon Sector Indicator Bit permanently set to a 1. Thus, the Secured Silicon Sector Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory locked. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon Sector is enabled. The Secured Silicon sector address space in this device is allocated as follows: Secured Silicon Sector Address Range Standard Factory Locked ESN Unavailable ExpressFlash Factory Locked ESN or determined by customer Determined by customer x16 000000h–000007h 000008h–00007Fh x8 000000h-00000Fh 000010h-0000FFh Customer Lockable Determined by customer The system accesses the Secured Silicon Sector through a command sequence (see Write Protect (WP#) on page 38). After the system writes the Enter Secured Silicon Sector command sequence, it may read the Secured Silicon Sector by using the addresses normally occupied by the first sector (SA0). This mode of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device reverts to sending commands to sector SA0. Customer Lockable: Secured Silicon Sector NOT Programmed or Protected At the Factory Unless otherwise specified, the device is shipped such that the customer may program and protect the 256-byte Secured Silicon sector. The system may program the Secured Silicon Sector using the write-buffer, accelerated and/or unlock bypass methods, in addition to the standard programming command sequence. See Command Definitions on page 43. Programming and protecting the Secured Silicon Sector must be used with caution since, once protected, there is no procedure available for unprotecting the Secured Silicon Sector area and none of the bits in the Secured Silicon Sector memory space can be modified in any way. The Secured Silicon Sector area can be protected using one of the following procedures: April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 37 Advance Information Write the three-cycle Enter Secured Silicon Sector Region command sequence, and then follow the in-system sector protect algorithm as shown in Figure 2, on page 36, except that RESET# may be at either VIH or VID. This allows in-system protection of the Secured Silicon Sector without raising any device pin to a high voltage. Note that this method is only applicable to the Secured Silicon Sector. Write the three-cycle Enter Secured Silicon Sector Region command sequence, and then use the alternate method of sector protection described in the Sector Group Protection and Unprotection on page 31 section. Once the Secured Silicon Sector is programmed, locked and verified, the system must write the Exit Secured Silicon Sector Region command sequence to return to reading and writing within the remainder of the array. Factory Locked: Secured Silicon Sector Programmed and Protected At the Factory In devices with an ESN, the Secured Silicon Sector is protected when the device is shipped from the factory. The Secured Silicon Sector cannot be modified in any way. An ESN Factory Locked device has an 16-byte random ESN at addresses 000000h–000007h. Please contact your sales representative for details on ordering ESN Factory Locked devices. Customers may opt to have their code programmed by the factory through the Spansion programming service (Customer Factory Locked). The devices are then shipped from the factory with the Secured Silicon Sector permanently locked. Contact your sales representative for details on using the Spansion programming service. Write Protect (WP#) The Write Protect function provides a hardware method of protecting the first or last sector group without using VID. Write Protect is one of two functions provided by the WP#/ACC input. If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the first or last sector group independently of whether those sector groups were protected or unprotected. Note that if WP#/ACC is at VIL when the device is in the standby mode, the maximum input load current is increased. See the table in DC Characteristics on page 64. If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the first or last sector was previously set to be protected or unprotected using the method described in Sector Group Protection and Unprotection on page 31. Note that WP# contains an internal pullup; when unconnected, WP# is at VIH. Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 30 on page 54 and Table 31 on page 55 for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise. Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and 38 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information all internal program/erase circuits are disabled, and the device resets to the read mode. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO. Write Pulse Glitch Protection Noise pulses of less than 3 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. Power-Up Write Inhibit If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up. Common Flash Memory Interface (CFI) The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h, any time the device is ready to read array data. The system can read CFI information at the addresses given in Tables 26–29. To terminate reading CFI data, the system must write the reset command. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Tables 26–29 . The system must write the reset command to return the device to reading array data. For further information, please refer to the CFI Specification and CFI Publication 100. Alternatively, contact your sales representative for copies of these documents. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 39 Advance Information Table 26. CFI Query Identification String Addresses (x16) 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah Addresses (x8) 20h 22h 24h 26h 28h 2Ah 2Ch 2Eh 30h 32h 34h Data 0051h 0052h 0059h 0002h 0000h 0040h 0000h 0000h 0000h 0000h 0000h Description Query Unique ASCII string “QRY” Primary OEM Command Set Address for Primary Extended Table Alternate OEM Command Set (00h = none exists) Address for Alternate OEM Extended Table (00h = none exists) Table 27. Addresses (x16) 1Bh 1Ch 1Dh 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h Addresses (x8) 36h 38h 3Ah 3Ch 3Eh 40h 42h 44h 46h 48h 4Ah 4Ch Data 0027h 0036h 0000h 0000h 0007h 0007h 000Ah 0000h 0001h 0005h 0004h 0000h System Interface String Description VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt VPP Min. voltage (00h = no VPP pin present) VPP Max. voltage (00h = no VPP pin present) Reserved for future use Typical timeout for Min. size buffer write 2N µs (00h = not supported) Typical timeout per individual block erase 2N ms Typical timeout for full chip erase 2N ms (00h = not supported) Reserved for future use Max. timeout for buffer write 2N times typical Max. timeout per individual block erase 2N times typical Max. timeout for full chip erase 2N times typical (00h = not supported) Note: CFI data related to VCC and time-outs may differ from actual VCC and time-outs of the product. Please consult the Ordering Information tables to obtain the VCC range for particular part numbers. Please consult the Erase and Programming Performance table for typical timeout specifications. 40 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Table 28. Addresses (x16) Addresses (x8) Data Device Geometry Definition Description 27h 4Eh 00xxh Device Size = 2 byte N 0017h = 64 Mb, 0016h = 32Mb, 0015h = 16Mb Flash Device Interface description (refer to CFI publication 100) 0000h = x8-only bus devices 0001h = x16-only bus devices 0002h = x8/x16 bus devices Max. number of byte in multi-byte write = 2N (00h = not supported) Number of Erase Block Regions within device (01h = uniform device, 02h = boot device) Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 28h 29h 2Ah 2Bh 2Ch 50h 52h 54h 56h 58h 000xh 0000h 0005h 0000h 00xxh 2Dh 2Eh 2Fh 30h 5Ah 5Ch 5Eh 60h 00xxh 000xh 00x0h 000xh 0000h, 0020h, 0000h, 0007h = 16 Mb (-R1, -R2) 007Fh, 0000h, 0020h, 0000h = 32 Mb (-R1, -R2) 003Fh, 0000h, 0001h = 32 Mb (-R3, R4) 007Fh, 0000h, 0020h, 0000h = 64 Mb (-R1, -R2, -R8, -R9) 007Fh, 0000h, 0000h, 0001h = 64 Mb (-R3, -R4, -R5, -R6, -R7) Erase Block Region 2 Information (refer to CFI publication 100) 0001h, 003Eh, 007Eh, 0000h, 0000h, 0000h, 0000h, 0000h, 0000h, 0000h, 0000h, 0000h, 001Eh = 16 Mb (-R1, -R2) 0001h = 32 Mb (-R1, -R2) 0001h = 64 Mb (-R1, -R2, -R8, -R9) 0000h = all others 31h 32h 33h 34h 35h 36h 37h 38h 39h 3Ah 3Bh 3Ch 60h 64h 66h 68h 6Ah 6Ch 6Eh 70h 72h 74h 76h 78h 00xxh 0000h 0000h 000xh 0000h 0000h 0000h 0000h 0000h 0000h 0000h 0000h Erase Block Region 3 Information (refer to CFI publication 100) Erase Block Region 4 Information (refer to CFI publication 100) April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 41 Advance Information Table 29. Addresses (x16) 40h 41h 42h 43h 44h Addresses (x8) 80h 82h 84h 86h 88h Primary Vendor-Specific Extended Query Description Query-unique ASCII string “PRI” Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock (Bits 1-0) 0 = Required, 1 = Not Required Data 0050h 0052h 0049h 0031h 0033h 45h 8Ah 000xh Process Technology (Bits 7-2) 0010b = 200 nm MirrorBit 0009h = x8-only bus devices 0008h = all other devices Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write Sector Protect 0 = Not Supported, X = Number of sectors in smallest sector group Sector Temporary Unprotect 00 = Not Supported, 01 = Supported Sector Protect/Unprotect scheme 0004h = Standard Mode (Refer to Text) Simultaneous Operation 00 = Not Supported, X = Number of Sectors in Bank Burst Mode Type 00 = Not Supported, 01 = Supported Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page ACC (Acceleration) Supply Minimum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV ACC (Acceleration) Supply Maximum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV Top/Bottom Boot Sector Flag 02h = Bottom Boot Device, 03h = Top Boot Device, 04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors top WP# protect Program Suspend 00h = Not Supported, 01h = Supported 46h 47h 48h 49h 4Ah 4Bh 4Ch 4Dh 4Eh 8Ch 8Eh 90h 92h 94h 96h 98h 9Ah 9Ch 0002h 0001h 0001h 0004h 0000h 0000h 0001h 00B5h 00C5h 4Fh 9Eh 00xxh 50h A0h 0001h 42 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Command Definitions Writing specific address and data commands or sequences into the command register initiates device operations. Table 3 0 on page 5 4 a nd Table 3 1 on page 55 define the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. A reset command is then required to return the device to reading array data. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the AC Characteristics section for timing diagrams. Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the device enters the erase-suspend-read mode, after which the system can read data from any nonerase-suspended sector. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See Erase Suspend/Erase Resume Commands on page 5 2 for more information. The system must issue the reset command to return the device to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the device is in the autoselect mode. See the next section, Reset Command, for more information. See also Requirements for Reading Array Data in the Device Bus Operations section for more information. The Read-Only Operations–AC Characteristics on page 66 provide the read parameters, and Figure 13, on page 67 shows the timing diagram. Reset Command Writing the reset command resets the device to the read or erase-suspend-read mode. Address bits are don’t cares for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to the read mode. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to the read mode. If the program command sequence is written while the device is in the Erase Suspend mode, writing the reset command returns the device to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to the read mode. If the device entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns the device to the erase-suspend-read mode. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 43 Advance Information If DQ5 goes high during a program or erase operation, writing the reset command returns the device to the read mode (or erase-suspend-read mode if the device was in Erase Suspend). Note that if DQ1 goes high during a Write Buffer Programming operation, the system must write the Write-to-Buffer-Abort Reset command sequence to reset the device for the next operation. Autoselect Command Sequence The autoselect command sequence allows the host system to read several identifier codes at specific addresses: Identifier Code Manufacturer ID Device ID, Cycle 1 Device ID, Cycle 2 Device ID, Cycle 3 Secured Silicon Sector Factory Protect Sector Protect Verify A7:A0 (x16) 00h 01h 0Eh 0Fh 03h (SA)02h A6:A-1 (x8) 00h 02h 1Ch 1Eh 06h (SA)04h Note: The device ID is read over three cycles. SA = Sector Address The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the autoselect command. The device then enters the autoselect mode. The system may read at any address any number of times without initiating another autoselect command sequence: The system must write the reset command to return to the read mode (or erasesuspend-read mode if the device was previously in Erase Suspend). Enter/Exit Secured Silicon Sector Command Sequence The Secured Silicon Sector region provides a secured data area containing an 8-word/16-byte random Electronic Serial Number (ESN). The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon Sector command sequence. The device continues to access the Secured Silicon Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence. The Exit Secured Silicon Sector command sequence returns the device to normal operation. Table 30 on page 54 and Table 31 on page 55 show the address and data requirements for both command sequences. See also Secured Silicon Sector Flash Memory Region on page 37 for further information. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon Sector is enabled. Word Program Command Sequence Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. Table 30 on page 54 and Table 31 on page 55 show the address and data requirements for the word program command sequence, respectively. 44 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information When the Embedded Program algorithm is complete, the device then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using DQ7 or DQ6. Refer to the Write Operation Status section for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a program operation is in progress. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once the device returns to the read mode, to ensure data integrity. Programming is allowed in any sequence of address locations and across sector boundaries. Programming to the same word address multiple times without intervening erases (incremental bit programming) requires a modified programming method. For such application requirements, please contact your local Spansion representative. Word programming is supported for backward compatibility with existing Flash driver software and for occasional writing of individual words. Use of write buffer programming (see below) is strongly recommended for general programming use when more than a few words are to be programmed. The effective word programming time using write buffer programming is approximately four times shorter th an the single word programming time. Any bit in a word cannot be programmed from 0 back to a 1. Attempting to do so may cause the device to set DQ5=1, or cause DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read shows that the data is still 0. Only erase operations can convert a 0 to a 1. Unlock Bypass Command Sequence The unlock bypass feature allows the system to program words to the device faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device then enters the unlock bypass mode. A two-cycle unlock bypass mode command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 30 on page 54 and Table 31 on page 55 show the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data 90h. The second cycle must contain the data 00h. The device then returns to the read mode. Write Buffer Programming Write Buffer Programming allows the system write to a maximum of 16 words/ 32 bytes in one programming operation. This results in faster effective programming time than the standard programming algorithms. The Write Buffer Programming command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the Write Buffer Load command written at the Sector Address in which programming occurs. The fourth cycle April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 45 Advance Information writes the sector address and the number of word locations, minus one, to be programmed. For example, if the system programs six unique address locations, then 05h should be written to the device. This tells the device how many write buffer addresses are loaded with data and therefore when to expect the Program Buffer to Flash command. The number of locations to program cannot exceed the size of the write buffer or the operation aborts. The fifth cycle writes the first address location and data to be programmed. The write-buffer-page is selected by address bits AMAX–A4. All subsequent address/ data pairs must fall within the selected-write-buffer-page. The system then writes the remaining address/data pairs into the write buffer. Write buffer locations may be loaded in any order. The write-buffer-page address must be the same for all address/data pairs loaded into the write buffer. (This means Write Buffer Programming cannot be performed across multiple write-buffer pages.) This also means that Write Buffer Programming cannot be performed across multiple sectors. If the system attempts to load programming data outside of the selected write-buffer page, the operation aborts. Note that if a Write Buffer address location is loaded multiple times, the address/ data pair counter is decremented for every data load operation. The host system must therefore account for loading a write-buffer location more than once. The counter decrements for each data load operation, not for each unique writebuffer-address location. Note also that if an address location is loaded more than once into the buffer, the final data loaded for that address is programmed. Once the specified number of write buffer locations are loaded, the system must then write the Program Buffer to Flash command at the sector address. Any other address and data combination aborts the Write Buffer Programming operation. The device then begins programming. Data polling should be used while monitoring the last address location loaded into the write buffer. DQ7, DQ6, DQ5, and DQ1 should be monitored to determine the device status during Write Buffer Programming. The write-buffer programming operation can be suspended using the standard program suspend/resume commands. Upon successful completion of the Write Buffer Programming operation, the device is ready to execute the next command. The Write Buffer Programming Sequence can be aborted in the following ways: Load a value that is greater than the page buffer size during the Number of Locations to Program step. Write to an address in a sector different than the one specified during the Write-Buffer-Load command. Write an Address/Data pair to a different write-buffer-page than the one selected by the Starting Address during the write buffer data loading stage of the operation. Write data other than the Confirm Command after the specified number of data load cycles. The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location loaded), DQ6 = toggle, and DQ5= 0 . A Write-to-Buffer-Abort Reset command sequence must be written to reset the device for the next operation. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a program operation is in progress.This flash device is capable of handling multiple write buffer programming operations on the same write buffer 46 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information address range without intervening erases. For applications requiring incremental bit programming, a modified programming method is required; please contact your local Spansion representative. Any bit in a write buffer address range cannot be programmed from 0 back to a 1. Attempting to do so may cause the device to set DQ5=1, of cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read shows that the data is still 0. Only erase operations can convert a 0 to a 1. Accelerated Program The device offers accelerated program operations through the WP#/ACC or ACC pin depending on the particular product. When the system asserts VHH on the WP#/ACC or ACC pin. The device uses the higher voltage on the WP#/ACC or ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result. WP# contains an internal pullup; when unconnected, WP# is at VIH. Figure 3, on page 48 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations–AC Characteristics on page 66 for parameters, and Figure 14, on page 68 for timing diagrams. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 47 Advance Information Write “Write to Buffer” command and Sector Address Write number of addresses to program minus 1(WC) and Sector Address Part of “Write to Buffer” Command Sequence Write first address/data Yes WC = 0 ? No Abort Write to Buffer Operation? No Yes Write to buffer ABORTED. Must write “Write-to-buffer Abort Reset” command sequence to return to read mode. Write to a different sector address (Note 1) Write next address/data pair WC = WC - 1 Write program buffer to flash sector address Read DQ7 - DQ0 at Last Loaded Address DQ7 = Data? No No DQ1 = 1? Yes DQ5 = 1? Yes Read DQ7 - DQ0 with address = Last Loaded Address No Yes (Note 2) DQ7 = Data? No Yes (Note 3) FAIL or ABORT PASS Notes: 1. 2. 3. When Sector Address is specified, any address in the selected sector is acceptable. However, when loading Write-Buffer address locations with data, all addresses must fall within the selected Write-Buffer Page. DQ7 may change simultaneously with DQ5. Therefore, DQ7 should be verified. If this flowchart location was reached because DQ5= 1, then the device FAILED. If this flowchart location was reached because DQ1= 1, then the Write to Buffer operation was ABORTED. In either case, the proper reset command must be written before the device can begin another operation. If DQ1= 1, write the Write-Buffer-Programming-Abort-Reset command. if DQ5= 1, write the Reset command. See Table 30 on page 54 and Table 31 on page 55 for command sequences required for write buffer programming. 4. Figure 3. Write Buffer Programming Operation 48 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information START Write Program Command Sequence Embedded Program algorithm in progress Data Poll from System Verify Data? No Yes No Increment Address Last Address? Yes Programming Completed Note: See Table 30 on page 54 and Table 31 on page 55 for program command sequence. Figure 4. Program Operation Program Suspend/Program Resume Command Sequence The Program Suspend command allows the system to interrupt a programming operation or a Write to Buffer programming operation so that data can be read from any non-suspended sector. When the Program Suspend command is written during a programming process, the device halts the program operation within 15 µs maximum (5µs typical) and updates the status bits. Addresses are not required when writing the Program Suspend command. After the programming operation is suspended, the system can read array data from any non-suspended sector. The Program Suspend command may also be issued during a programming operation while an erase is suspended. In this case, data may be read from any addresses not in Erase Suspend or Program Suspend. If a read is needed from the Secured Silicon Sector area (One-time Program area), then user must use the proper command sequences to enter and exit this region. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a program operation is in progress. The system may also write the autoselect command sequence when the device is in the Program Suspend mode. The system can read as many autoselect codes as required. When the device exits the autoselect mode, the device reverts to the Program Suspend mode, and is ready for another valid operation. See Autoselect Command Sequence on page 44 for more information. After the Program Resume command is written, the device reverts to programming. The system can determine the status of the program operation using the April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 49 Advance Information DQ7 or DQ6 status bits, just as in the standard program operation. See Write Operation Status on page 56 for more information. The system must write the Program Resume command (address bits are don’t care) to exit the Program Suspend mode and continue the programming operation. Further writes of the Resume command are ignored. Another Program Suspend command can be written after the device resumes programming. Program Operation or Write-to-Buffer Sequence in Progress Write address/data XXXh/B0h Write Program Suspend Command Sequence Command is also valid for Erase-suspended-program operations Wait 15 µs Read data as required Autoselect and SecSi Sector read operations are also allowed Data cannot be read from erase- or program-suspended sectors No Done reading? Yes Write address/data XXXh/30h Write Program Resume Command Sequence Device reverts to operation prior to Program Suspend Figure 5. Program Suspend/Program Resume Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 30 on page 54 and Table 31 on page 55 show the address and data requirements for the chip erase command sequence. When the Embedded Erase algorithm is complete, the device returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. Refer to Write Operation Status on page 56 for information on these status bits. Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If this 50 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information occurs, the chip erase command sequence should be reinitiated once the device returns to reading array data, to ensure data integrity. Figure 6, on page 52 illustrates the algorithm for the erase operation. Refer to Table 3 8 on page 7 0 f or parameters, and Figure 18, on page 74 f or timing diagrams. Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table 30 on page 54 and Table 31 on page 55 shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of 50 µs occurs. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out may or may not be accepted. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. Any command other than Sector Erase or Erase Suspend during the time-out period resets the device to the read mode. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when an erase operation is in progress. The system must rewrite the command sequence and any additional addresses and commands. The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3: Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command sequence. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by reading DQ7, DQ6, or DQ2 in the erasing sector. Refer to the Write Operation Status section for information on these status bits. Once the sector erase operation begins, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once the device returns to reading array data, to ensure data integrity. Figure 6, on page 52 illustrates the algorithm for the erase operation. Refer to Table 3 8 on page 7 0 f or parameters, and Figure 18, on page 74 f or timing diagrams. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 51 Advance Information START Write Erase Command Sequence (Notes 1, 2) Data Poll to Erasing Bank from System Embedded Erase algorithm in progress No Data = FFh? Yes Erasure Completed Notes: 1.See Table 30 and Table 31 for program command sequence. 2.See the section on DQ3 for information on the sector erase timer. Figure 6. Erase Operation Erase Suspend/Erase Resume Commands The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. When the Erase Suspend command is written during the sector erase operation, the device requires a typical of 5 µs (maximum of 20 µs) to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. A fter the erase operation is suspended, the device enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device erase suspends all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to Write Operation Status on page 56 for information on these status bits. 52 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information After an erase-suspended program operation is complete, the device returns to the erase-suspend-read mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard word program operation. Refer t o Write Operation Status on page 5 6 f or more information. In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the A utoselect Mode on page 3 0 a nd A utoselect Command Sequence on page 44 sections for details. To resume the sector erase operation, the system must write the Erase Resume command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip resumes erasing. Note: During an erase operation, this flash device performs multiple internal operations which are invisible to the system. When an erase operation is suspended, any of the internal operations that were not fully completed must be restarted. As such, if this flash device is continually issued suspend/resume commands in rapid succession, erase progress is impeded as a function of the number of suspends. The result is a longer cumulative erase time than without suspends. Note that the additional suspends do not affect device reliability or future performance. In most systems rapid erase/suspend activity occurs only briefly. In such cases, erase performance is not significantly impacted. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 53 Advance Information Command Definitions Table 30. Cycles Command Sequence (Note 1) Read (Note 5) Reset (Note 6) Autoselect (Note 7) Manufacturer ID Device ID (Note 8) Device ID (Note 9) Secured Silicon Sector Factory Protect Sector Group Protect Verify (Note 11) Command Definitions (x16 Mode, BYTE# = VIH) Bus Cycles (Notes 2–5) First RA XXX 555 555 555 555 555 555 555 555 555 SA 555 555 XXX XXX 555 555 XXX XXX 55 RD F0 AA AA AA AA AA AA AA AA AA 29 AA AA A0 90 AA AA B0 30 98 2AA 2AA PA XXX 2AA 2AA 55 55 PD 00 55 55 555 555 80 80 555 555 AA AA 2AA 2AA 55 55 555 SA 10 30 555 555 F0 20 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 55 55 55 55 55 55 55 55 55 555 555 555 555 555 555 555 555 SA 90 90 90 90 90 88 90 A0 25 XXX PA SA 00 PD WC PA PD WBL PD X00 X01 X01 X03 (SA)X02 0001 227E (Note 18) (Note 10) 00/01 X0E (Note 19) X0F (Note 19) Second Third Fourth Fifth Sixth 1 1 4 6 4 4 4 3 4 4 3 1 3 3 2 2 6 6 1 1 1 Enter Secured Silicon Sector Region Exit Secured Silicon Sector Region Program Write to Buffer (Note 12) Program Buffer to Flash Write to Buffer Abort Reset (Note 13) Unlock Bypass Unlock Bypass Program (Note 14) Unlock Bypass Reset (Note 15) Chip Erase Sector Erase Program/Erase Suspend (Note 16) Program/Erase Resume (Note 17) CFI Query (Note 18) Legend: X = Don’t care RA = Read Address of memory location to be read. RD = Read Data read from location RA during read operation. PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse, whichever happens later. PD = Program Data for location PA. Data latches on rising edge of WE# or CE# pulse, whichever happens first. SA = Sector Address of sector to be verified (in autoselect mode) or erased. Address bits A21–A15 uniquely select any sector. WBL = Write Buffer Location. Address must be within same write buffer page as PA. WC = Word Count. Number of write buffer locations to load minus 1. Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. See Table 4 on page 18 for description of bus operations. All values are in hexadecimal. Shaded cells indicate read cycles. All others are write cycles. During unlock and command cycles, when lower address bits are 555 or 2AA as shown in table, address bits above A11 and data bits above DQ7 are don’t care. No unlock or command cycles required when device is in read mode. Reset command is required to return to read mode (or to erase-suspend-read mode if previously in Erase Suspend) when device is in autoselect mode, or if DQ5 goes high while device is providing status information. Fourth cycle of the autoselect command sequence is a read cycle. Data bits DQ15–DQ8 are don’t care. Except for RD, PD and WC. SeeAutoselect Command Sequence on page 44 for more information. For S29GL064A and S29GL032A, Device ID must be read in three cycles. For S29GL016A, Device ID must be read in one cycle. Refer to Table 15 on page 31 for data indicating Secured Silicon Sector factory protect status. Data is 00h for an unprotected sector group and 01h for a protected sector group. Total number of cycles in command sequence is determined by number of words written to write buffer. Maximum number of cycles in command sequence is 21, including Program Buffer to Flash command. Command sequence resets device for next command after aborted write-to-buffer operation. Unlock Bypass command is required prior to Unlock Bypass Program command. Unlock Bypass Reset command is required to return to read mode when device is in unlock bypass mode. System may read and program in non-erasing sectors, or enter autoselect mode, when in Erase Suspend mode. Erase Suspend command is valid only during a sector erase operation. Erase Resume command is valid only during Erase Suspend mode. Command is valid when device is ready to read array data or when device is in autoselect mode. Refer to Table 15 on page 31, for individual Device IDs per device density and model number. 54 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Table 31. Command Sequence (Note 1) Read (Note 6) Reset (Note 7) Autoselect (Note 8) Manufacturer ID Device ID (Note 9) Device ID(Note 10) Secured Silicon Sector Factory Protect Sector Group Protect Verify (Note 12) Cycles Command Definitions (x8 Mode, BYTE# = VIL) Bus Cycles (Notes 2–5) First RA XXX AAA AAA AAA AAA AAA AAA AAA AAA SA AAA AAA AAA XXX XXX AA RD F0 AA AA AA AA AA AA AA AA 29 AA AA AA B0 30 98 555 555 555 55 55 55 AAA AAA AAA F0 80 80 AAA AAA AA AA 555 555 55 55 AAA SA 10 30 555 555 555 555 555 555 555 555 55 55 55 55 55 55 55 55 AAA AAA AAA AAA AAA AAA AAA SA 90 90 90 90 90 88 90 25 XXX SA 00 BC PA PD WBL PD X00 X02 X02 X06 (SA)X04 01 7E (Note 11) (Note 10) 00/01 X1C (Note 18) X1E (Note 18) Second Third Fourth Addr Data Addr Fifth Data Addr Sixth Data Addr Data Addr Data Addr Data 1 1 4 6 4 4 4 3 4 3 1 3 6 6 1 1 1 Enter Secured Silicon Sector Region Exit Secured Silicon Sector Region Write to Buffer (Note 13) Program Buffer to Flash Write to Buffer Abort Reset (Note 14) Chip Erase Sector Erase Program/Erase Suspend (Note 15) Program/Erase Resume (Note 16) CFI Query (Note 17) Legend: X = Don’t care RA = Read Address of memory location to be read. RD = Read Data read from location RA during read operation. PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse, whichever happens later. PD = Program Data for location PA. Data latches on rising edge of WE# or CE# pulse, whichever happens first. SA = Sector Address of sector to be verified (in autoselect mode) or erased. Address bits A21–A15 uniquely select any sector. WBL = Write Buffer Location. Address must be within same write buffer page as PA. BC = Byte Count. Number of write buffer locations to load minus 1. Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. See Table 4 on page 18 for description of bus operations. All values are in hexadecimal. Shaded cells indicate read cycles. All others are write cycles. During unlock and command cycles, when lower address bits are 555 or AAA as shown in table, address bits above A11 are don’t care. Unless otherwise noted, address bits A21–A11 are don’t cares. No unlock or command cycles required when device is in read mode. Reset command is required to return to read mode (or to erase-suspend-read mode if previously in Erase Suspend) when device is in autoselect mode, or if DQ5 goes high while device is providing status information. Fourth cycle of autoselect command sequence is a read cycle. Data bits DQ15–DQ8 are don’t care. See Autoselect Command Sequence on page 44e or more information. For S29GL064A and S29GL032A Device ID must be read in three cycles. For S29GL016A, Device ID must be read in one cycle. Refer to Table 15 on page 31, for data indicating Secured Silicon Sector factory protect status. Data is 00h for an unprotected sector group and 01h for a protected sector group. Total number of cycles in command sequence is determined by number of bytes written to write buffer. Maximum number of cycles in command sequence is 37, including Program Buffer to Flash command. Command sequence resets device for next command after aborted write-to-buffer operation. System may read and program in non-erasing sectors, or enter autoselect mode, when in Erase Suspend mode. Erase Suspend command is valid only during a sector erase operation. Erase Resume command is valid only during Erase Suspend mode. Command is valid when device is ready to read array data or when device is in autoselect mode. Refer to Table 15 on page 31, for individual Device IDs per device density and model number. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 55 Advance Information Write Operation Status The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 32 on page 61 and the following subsections describe the function of these bits. DQ7 and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether an Embedded Program or Erase operation is in progress or is completed. DQ7: Data# Polling The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then the device returns to the read mode. During the Embedded Erase algorithm, Data# Polling produces a 0 on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a 1 on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the device returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device completed the program or erase operation and DQ7 has valid data, the data outputs on DQ0–DQ6 may be still invalid. Valid data on DQ0–DQ7 appears on successive read cycles. Table 32 on page 61 shows the outputs for Data# Polling on DQ7. Figure 7, on page 57 shows the Data# Polling algorithm. Figure 19, on page 74 shows the Data# Polling timing diagram. 56 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information START Read DQ15–DQ0 Addr = VA DQ7 = Data? Yes No No DQ5 = 1? Yes Read DQ15–DQ0 Addr = VA DQ7 = Data? Yes No FAIL Notes: 1. 2. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5. PASS Figure 7. Data# Polling Algorithm RY/BY#: Ready/Busy# The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or in the erase-suspend-read mode. Table 32 on page 61 shows the outputs for RY/BY#. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 57 Advance Information DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection onDQ7: Data# Polling on page 56). If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Table 32 on page 61 shows the outputs for Toggle Bit I on DQ6. Figure 8, on page 59 shows the toggle bit algorithm. Figure 20, on page 75 shows the toggle bit timing diagrams. Figure 21, on page 75 shows the differences between DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit II on page 60. 58 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information START Read DQ7–DQ0 Read DQ7–DQ0 Toggle Bit = Toggle? Yes No No DQ5 = 1? Yes Read DQ7–DQ0 Twice Toggle Bit = Toggle? Yes Program/Erase Operation Not Complete, Write Reset Command No Program/Erase Operation Complete Note: The system should recheck the toggle bit even if DQ5 = 1 because the toggle bit may stop toggling as DQ5 changes to 1. See the subsections on DQ6 and DQ2 for more information. Figure 8. Toggle Bit Algorithm April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 59 Advance Information DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that were selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 32 on page 61 to compare outputs for DQ2 and DQ6. Figure 8, on page 59 shows the toggle bit algorithm in flowchart form, and the section “DQ2: Toggle Bit II” explains the algorithm. See also the RY/BY#: Ready/ Busy# subsection. Figure 20, on page 75 shows the toggle bit timing diagram. Figure 21, on page 75 shows the differences between DQ2 and DQ6 in graphical form. Reading Toggle Bits DQ6/DQ2 Refer to Figure 8, on page 59 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device completed the program or erase operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 8, on page 59). DQ5: Exceeded Timing Limits DQ5 indicates whether the program, erase, or write-to-buffer time exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a 1. indicating that the program or erase cycle was not successfully completed. The device may output a 1 on DQ5 if the system tries to program a 1 to a location that was previously programmed to 0. Only an erase operation can change a 0 back to a 1. Under this condition, the device halts the operation, and when the timing limit is exceeded, DQ5 produces a 1. 60 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information In all these cases, the system must write the reset command to return the device to the reading the array (or to erase-suspend-read if the device was previously in the erase-suspend-program mode). DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure began. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a 0 to a 1. If the time between additional sector erase commands from the system can be assumed to be less than 50 µs, the system need not monitor DQ3. See also the Sector Erase Command Sequence section. After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device accepted the command sequence, and then read DQ3. If DQ3 is 1, the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is 0, the device accepts additional sector erase commands. To ensure the command is accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 32 on page 61 shows the status of DQ3 relative to the other status bits. DQ1: Write-to-Buffer Abort DQ1 indicates whether a Write-to-Buffer operation was aborted. Under these conditions DQ1 produces a 1. The system must issue the Write-to-Buffer-AbortReset command sequence to return the device to reading array data. See Write Buffer on page 20 for more details. Table 32. Status Standard Mode Embedded Program Algorithm Embedded Erase Algorithm ProgramSuspend Read EraseSuspend Read Program-Suspended Sector Non-Program Suspended Sector Write Operation Status DQ7 (Note 2) DQ7# 0 DQ6 Toggle Toggle DQ5 (Note 1) 0 0 DQ3 N/A 1 DQ2 (Note 2) No toggle Toggle DQ1 0 N/A RY/BY# 0 0 1 1 N/A Toggle N/A 1 1 N/A N/A N/A N/A N/A N/A N/A 0 1 0 0 0 Invalid (not allowed) Data 1 No toggle 0 Data DQ7# DQ7# DQ7# Toggle Toggle Toggle 0 0 0 Program Suspend Mode Erase-Suspended Sector Non-Erase Suspended Sector Erase Suspend Mode Erase-Suspend-Program (Embedded Program) Write-toBuffer Busy (Note 3) Abort (Note 4) Notes: 1. 2. 3. 4. DQ5 switches to 1 when an Embedded Program, Embedded Erase, or Write-to-Buffer operation exceeded the maximum timing limits. Refer to the section on DQ5 for more information. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location. DQ1 switches to 1 when the device aborts the write-to-buffer operation. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 61 Advance Information Absolute Maximum Ratings Storage Temperature, Plastic Packages . . . . . . . . . . . . . . . . –65°C to +150°C Ambient Temperature with Power Applied . . . . . . . . . . . . . . –65°C to +125°C Voltage with Respect to Ground: VCC (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V A9, OE#, ACC and RESET# (Note 2) . . . . . . . . . . . . . –0.5 V to +12.5 V All other pins (Note 1) . . . . . . . . . . . . . . . . . . . . . –0.5 V to VCC+0.5 V Output Short Circuit Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . 200 mA Notes: 1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs or I/Os may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 9, on page 62. Maximum DC voltage on input or I/Os is VCC + 0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC + 2.0 V for periods up to 20 ns. See Figure 10, on page 62. 2. Minimum DC input voltage on pins A9, OE#, ACC, and RESET# is –0.5 V. During voltage transitions, A9, OE#, ACC, and RESET# may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 9, on page 62. Maximum DC input voltage on pin A9, OE#, ACC, and RESET# is +12.5 V which may overshoot to +14.0V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. 4. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. 20 ns +0.8 V –0.5 V –2.0 V 20 ns 20 ns Figure 9. Maximum Negative Overshoot Waveform 20 ns VCC +2.0 V VCC +0.5 V 2.0 V 20 ns 20 ns Figure 10. Maximum Positive Overshoot Waveform 62 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Operating Ranges Industrial (I) Devices Ambient Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C Supply Voltages VCC for full voltage range . . . . . . . . . . . . . . . . . . . . . . . . . +2.7 V to +3.6 V VCC for regulated voltage range . . . . . . . . . . . . . . . . . . . . . +3.0 V to +3.6 V VIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCC Note:Operating ranges define those limits between which the functionality of the device is guaranteed. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 63 Advance Information DC Characteristics CMOS Compatible Parameter Symbol ILI Parameter Description (Notes) Input Load Current (Note 1) Test Conditions VIN = VSS to VCC, VCC = VCC max VCC = VCC max; A9 = 12.5 V -40°C to 0°C 0°C to 85°C Min Typ Max ±1.0 250 µA 35 35 ±1.0 1 MHz ICC1 VCC Initial Read Current (Notes 2, 3) CE# = VIL, OE# = VIH, 5 MHz 10 MHz 10 MHz ICC2 ICC3 ICC4 ICC5 ICC6 VIL VIH VHH VID VOL VOH1 VOH2 VLKO Low VCC Lock-Out Voltage (Note 7) VCC Intra-Page Read Current (Notes 2, 3) VCC Active Write Current (Note 3) VCC Standby Current (Note 3) VCC Reset Current (Note 3) Automatic Sleep Mode (Notes 3, 5) Input Low Voltage 1 (Note 6) Input High Voltage 1 (Note 6) Voltage for ACC Program Acceleration Voltage for Autoselect and Temporary Sector Unprotect Output Low Voltage (Note 6) Output High Voltage VCC = 2.7 –3.6 V VCC = 2.7 –3.6 V IOL = 4.0 mA, VCC = VCC min IOH = –2.0 mA, VCC = VCC min IOH = –100 µA, VCC = VCC min 0.85 VCC VCC–0.4 2.3 2.5 CE# = VIL, OE# = VIH CE# = VIL, OE# = VIH CE#, RESET# = VCC ± 0.3 V, WP# = VIH RESET# = VSS ± 0.3 V, WP# = VIH VIH = VCC ± 0.3 V; -0.1< VIL ≤ 0.3 V, WP# = VIH –0.5 0.7 VCC 11.5 11.5 12.0 12.0 40 MHz 5 18 35 5 10 50 1 1 1 20 25 50 20 mA 40 60 5 5 5 0.8 VCC + 0.5 12.5 12.5 0.45 mA µA µA µA V V V V V V V V mA µA µA Unit µA ILIT ILR ILO A9, ACC Input Load Current Reset Leakage Current Output Leakage Current VCC = VCC max; RESET# = 12.5 V VOUT = VSS to VCC, VCC = VCC max Notes: 1. 2. 3. 4. 5. 6. 7. On the WP#/ACC pin only, the maximum input load current when WP# = VIL is ± 5.0 µA. The ICC current listed is typically less than 3.5 mA/MHz, with OE# at VIH. Maximum ICC specifications are tested with VCC = VCCmax. ICC active while Embedded Erase or Embedded Program is in progress. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. VCC voltage requirements. Not 100% tested. 64 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Test Conditions 3.3 V Device Under Test CL 6.2 kΩ 2.7 kΩ Note: Diodes are IN3064 or equivalent. Figure 11. Test Setup Table 33. Test Specifications Test Condition All Speeds Unit Output Load Output Load Capacitance, CL (including jig capacitance) Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels (See Note) Output timing measurement reference levels 1 TTL gate 30 5 0.0 or VCC 0.5 VCC 0.5 VCC pF ns V V V Key to Switching Waveforms Waveform Inputs Outputs Steady Changing from H to L Changing from L to H Don’t Care, Any Change Permitted Does Not Apply Changing, State Unknown Center Line is High Impedance State (High Z) VCC 0.0 V Input 0.5 VCC Measurement Level 0.5 VCC Output Figure 12. Input Waveforms and Measurement Levels April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 65 Advance Information AC Characteristics Table 34. Read-Only Operations-S29GL064A Only Parameter JEDEC tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX Std. tRC tACC tCE tPACC tOE tDF tDF tOH tOEH Description Read Cycle Time (Note 1) Address to Output Delay Chip Enable to Output Delay Page Access Time Output Enable to Output Delay Chip Enable to Output High Z (Note 1) Output Enable to Output High Z (Note 1) Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First Output Enable Hold Time (Note 1) Read Toggle and Data# Polling CE#, OE# = VIL OE# = VIL Test Setup Min Max Max Max Max Max Max Min Min Min Speed Options 90 90 90 90 25 25 10 100 100 100 30 30 16 16 0 0 10 11 110 110 110 30 30 Unit ns ns ns ns ns ns ns ns ns ns Notes: 1. 2. Not 100% tested. See Figure 11, on page 65 and Table 33 on page 65 for test specifications Table 35. Read-Only Operations-S29GL032A Only Parameter JEDEC tAVAV tAVQV tELQV Std. tRC tACC tCE tPACC tGLQV tEHQZ tGHQZ tAXQX tOE tDF tDF tOH Read Cycle Time (Note 1) Address to Output Delay Chip Enable to Output Delay Page Access Time Output Enable to Output Delay Chip Enable to Output High Z (Note 1) Output Enable to Output High Z (Note 1) Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First Read tOEH Output Enable Hold Time (Note 1) Toggle and Data# Polling CE#, OE# = VIL OE# = VIL Description Test Setup Min Max Max Max Max Max Max Min Min Min Speed Options 90 90 90 90 25 25 10 100 100 100 30 30 16 16 0 0 10 11 110 110 110 30 30 Unit ns ns ns ns ns ns ns ns ns ns Notes: 1. 2. Not 100% tested. See Figure 11, on page 65 and Table 33 on page 65 for test specifications. 66 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Table 36. Read-Only Operation-S29GL016A Only Parameter JEDEC tAVAV tAVQV tELQV Std. tRC tACC tCE tPACC tGLQV tEHQZ tGHQZ tAXQX tOE tDF tDF tOH tOEH Read Cycle Time (Note 1) Address to Output Delay Chip Enable to Output Delay Page Access Time Output Enable to Output Delay Chip Enable to Output High Z (Note 1) Output Enable to Output High Z (Note 1) Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First Read Output Enable Hold Time (Note 1) Toggle and Data# Polling CE#, OE# = VIL OE# = VIL Description Test Setup Min Max Max Max Max Max Max Min Min Min Speed Options 90 90 90 90 25 25 16 16 0 0 10 10 100 100 100 30 30 Unit ns ns ns ns ns ns ns ns ns ns Notes: 1. 2. Not 100% tested. See Figure 11, on page 65 and Table 33 on page 65 for test specifications. tRC Addresses CE# tRH tRH OE# tOEH WE# HIGH Z Outputs RESET# RY/BY# Output Valid tCE tOH HIGH Z tOE tDF Addresses Stable tACC 0V Figure 13. Read Operation Timings April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 67 Advance Information A23-A2 Same Page A1-A0* Aa tACC Ab tPACC Ac tPACC tPACC Ad Data Bus CE# OE# Qa Qb Qc Qd Note: * Figure shows device in word mode. Addresses are A1–A-1 for byte mode. Figure 14. Page Read Timings Table 37. Hardware Reset (RESET#) Parameter JEDEC Std. tReady tReady tRP tRH tRPD tRB Description RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note) RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode(See Note) RESET# Pulse Width Reset High Time Before Read (See Note) RESET# Input Low to Standby Mode (See Note) RY/BY# Output High to CE#, OE# pin Low Max Max Min Min Min Min All Speed Options 20 500 500 50 20 0 Unit µs ns ns ns µs ns Note: Not 100% tested. 68 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information RY/BY# CE#, OE# tRH RESET# tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY# tRB CE#, OE# tRH RESET# tRP Notes: 1. 2. 3. Not 100% tested. See the Erase And Programming Performance on page 81 for more information. For 1–16 words/1–32 bytes programmed. Figure 15. Reset Timings April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 69 Advance Information Table 38. Erase and Program Operations-S29GL064A Parameter JEDEC tAVAV tAVWL Std. tWC tAS tASO tWLAX tAH tAHT tDVWH tWHDX tDS tDH tCEPH tOEPH tGHWL tELWL tWHEH tWLWH tWHDL tGHWL tCS tCH tWP tWPH Write Cycle Time (Note 1) Address Setup Time Address Setup Time to OE# low during toggle bit polling Address Hold Time Description Min Min Min Min Speed Options 90 90 10 100 0 15 45 0 35 0 20 20 0 0 0 35 30 240 60 54 0.5 250 50 90 100 4 110 sec ns µs ns µs µs 11 110 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns Address Hold Time From CE# or OE# high during toggle bit polling Min Data Setup Time Data Hold Time CE# High during toggle bit polling OE# High during toggle bit polling Read Recovery Time Before Write (OE# High to WE# Low) CE# Setup Time CE# Hold Time Write Pulse Width Write Pulse Width High Write Buffer Program Operation (Note 2, Note 3) Min Min Min Min Min Min Min Min Min Typ Typ Typ Typ Min Min Min Max tWHWH1 tWHWH1 Single Word Program Operation (Note 2) Accelerated Single Word Program Operation (Note 2) tWHWH2 tWHWH2 tVHH tVCS tBUSY tPOLL Sector Erase Operation (Note 2) VHH Rise and Fall Time (Note 1) VCC Setup Time Note 1) WE# High to RY/BY# Low Program Valid before Status Polling Notes: 1. 2. 3. 4. Not 100% tested. See the Erase And Programming Performance on page 81 for more information. For 1–16 words/1–32 bytes programmed. If a program suspend command is issued within tPOLL, the device requires tPOLL before reading status data, once programming resumes (that is, the program resume command is written). If the suspend command was issued after tPOLL, status data is available immediately after programming resumes. See Figure 16, on page 73. 70 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Table 39. Erase and Program Operations-S29GL032A Only Parameter JEDEC tAVAV tAVWL Std. tWC tAS tASO tWLAX tAH tAHT tDVWH tWHDX tDS tDH tCEPH tOEPH tGHWL tELWL tWHEH tWLWH tWHDL tGHWL tCS tCH tWP tWPH Write Cycle Time (Note 1) Address Setup Time Address Setup Time to OE# low during toggle bit polling Address Hold Time Address Hold Time From CE# or OE# high during toggle bit polling Data Setup Time Data Hold Time CE# High during toggle bit polling OE# High during toggle bit polling Read Recovery Time Before Write (OE# High to WE# Low) CE# Setup Time CE# Hold Time Write Pulse Width Write Pulse Width High Write Buffer Program Operation (Note 2, Note 3) tWHWH1 tWHWH1 Single Word Program Operation (Note 2) Accelerated Single Word Program Operation (Note 2) tWHWH2 tWHWH2 tVHH tVCS tBUSY tPOLL Sector Erase Operation (Note 2) VHH Rise and Fall Time (Note 1) VCC Setup Time (Note 1) WE# High to RY/BY# Low Program Valid before Status Polling Description Min Min Min Min Min Min Min Min Min Min Min Min Min Min Typ Typ Typ Typ Min Min Min Max 90 Speed Options 90 90 10 100 0 15 45 0 35 0 20 20 0 0 0 35 30 240 60 54 0.5 250 50 100 4 110 sec ns µs ns µs µs 11 110 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns Notes: 1. 2. 3. 4. 5. Not 100% tested. See Erase And Programming Performance on page 81 for more information For 1–16 words/1–32 bytes programmed. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation. If a program suspend command is issued within tPOLL, the device requires tPOLL before reading status data, once programming resumes (that is, the program resume command is written). If the suspend command was issued after tPOLL, status data is available immediately after programming resumes. See Figure 16, on page 73. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 71 Advance Information Table 40. Erase and Program Operations-S29GL016A Only Parameter JEDEC tAVAV tAVWL Std. tWC tAS tASO tWLAX tAH tAHT tDVWH tWHDX tDS tDH tCEPH tOEPH tGHWL tELWL tWHEH tWLWH tWHDL tGHWL tCS tCH tWP tWPH Write Cycle Time (Note 11) Address Setup Time Address Setup Time to OE# low during toggle bit polling Address Hold Time Address Hold Time From CE# or OE# high during toggle bit polling Data Setup Time Data Hold Time CE# High during toggle bit polling OE# High during toggle bit polling Read Recovery Time Before Write (OE# High to WE# Low) CE# Setup Time CE# Hold Time Write Pulse Width Write Pulse Width High Write Buffer Program Operation (Note 2, Note 3) tWHWH1 tWHWH1 Single Word Program Operation (Note 2) Accelerated Single Word Program Operation (Note 2) tWHWH2 tWHWH2 tVHH tVCS tBUSY tPOLL Sector Erase Operation (Note 2) VHH Rise and Fall Time (Note 1) VCC Setup Time (Note 1) WE# High to RY/BY# Low Program Valid before Status Polling Description Min Min Min Min Min Min Min Min Min Min Min Min Min Min Typ Typ Typ Typ Min Min Min Max 90 4 Speed Options 90 90 0 15 45 0 35 0 20 20 0 0 0 35 30 240 60 54 0.5 250 50 100 sec ns µs ns µs µs 10 100 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns Notes: 1. 2. 3. 4. 5. Not 100% tested. See Erase And Programming Performance on page 81 for more information For 1–16 words/1–32 bytes programmed. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation. If a program suspend command is issued within tPOLL, the device requires tPOLL before reading status data, once programming resumes (that is, the program resume command is written). If the suspend command was issued after tPOLL, status data is available immediately after programming resumes. See Figure 16, on page 73 72 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Program Command Sequence (last two cycles) tWC Addresses 555h tAS PA tAH CE# OE# tWP WE# tCS tDS Data tDH PD tBUSY RY/BY# tWPH tPOLL Read Status Data (last two cycles) PA PA tCH tWHWH1 Status DOUT tRB A0h VCC tVCS Notes: 1. 2. PA = program address, PD = program data, DOUT is the true data at the program address. Illustration shows device in word mode. Figure 16. Program Operation Timings VHH HH ACC VIL or VIH IL IH tVHH VHH tVHH VHH VIL or VIH IL IH Figure 17. Accelerated Program Timing Diagram April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 73 Advance Information Erase Command Sequence (last two cycles) tWC Addresses 2AAh tAS SA 555h for chip erase Read Status Data VA tAH VA CE# OE# tWP WE# tCS tDS tCH tWPH tWHWH2 tDH Data 55h 30h 10 for Chip Erase In Progress Complete tBUSY RY/BY# tVCS VCC Notes: 1. 2. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status on page 56.) Illustration shows device in word mode. tRB Figure 18. Chip/Sector Erase Operation Timings tRC Addresses tPOLL CE# tCH OE# tOEH WE# tOH DQ7 High Z VA tACC tCE VA VA tOE tDF Complement Complement True Valid Data High Z DQ0–DQ6 tBUSY RY/BY# Status Data Status Data True Valid Data Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. Figure 19. Data# Polling Timings (During Embedded Algorithms) 74 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information tAHT Addresses tAS tAHT tASO CE# tOEH WE# tOEPH OE# tDH DQ6 / DQ2 Valid Data Valid Status tCEPH tOE Valid Status Valid Status Valid Data (first read) RY/BY# (second read) (stops toggling) Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle. Figure 20. Toggle Bit Timings (During Embedded Algorithms) Enter Embedded Erasing WE# Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Program Erase Resume Erase Suspend Read Erase Erase Complete Erase Suspend Read DQ6 DQ2 Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6. Figure 21. DQ2 vs. DQ6 Table 41. Temporary Sector Unprotect Parameter JEDEC Std tVIDR tRSP Description VID Rise and Fall Time (See Note) RESET# Setup Time for Temporary Sector Unprotect Min Min All Speed Options 500 4 Unit ns µs Note: Not 100% tested. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 75 Advance Information VID RESET# VSS, VIL, or VIH tVIDR Program or Erase Command Sequence CE# tVIDR VID VSS, VIL, or VIH WE# tRSP RY/BY# tRRB Figure 22. Temporary Sector Group Unprotect Timing Diagram VID VIH RESET# SA, A6, A3, A2, A1, A0 Data 60h Valid* Sector Group Protect or Unprotect 60h Sector Group Protect: 150 µs, Sector Group Unprotect: 15 ms Valid* Verify 40h Valid* Status 1 µs CE# WE# OE# Note: For sector group protect, A6:A0 = 0xx0010. For sector group unprotect, A6:A0 = 1xx0010. Figure 23. Sector Group Protect and Unprotect Timing Diagram 76 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Table 42. Alternate CE# Controlled Erase and Program Operations-S29GL064A Parameter JEDEC tAVAV tAVWL tELAX tDVEH tEHDX tGHEL tWLEL tEHWH tELEH tEHEL Std. tWC tAS tAH tDS tDH tGHEL tWS tWH tCP tCPH Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recovery Time Before Write (OE# High to WE# Low) WE# Setup Time WE# Hold Time CE# Pulse Width CE# Pulse Width High Write Buffer Program Operation (Notes 2, 3) tWHWH1 tWHWH1 Single Word Program Operation (Note 2) Accelerated Single Word Program Operation (Note 2) tWHWH2 tWHWH2 tRH tPOLL Sector Erase Operation (Note 2) RESET# High Time Before Write Program Valid before Status Polling (Note 4) Description Min Min Min Min Min Min Min Min Min Min Typ Typ Typ Typ Min Max Speed Options 90 90 10 100 0 45 35 0 0 0 0 35 25 240 60 54 0.5 50 4 sec ns µs µs 11 110 Unit ns ns ns ns ns ns ns ns ns ns Notes: 1. 2. 3. 4. Not 100% tested. See the Erase And Programming Performance on page 81 for more information. For 1–16 words/1–32 bytes programmed. If a program suspend command is issued within tPOLL, the device requires tPOLL before reading status data, once programming resumes (that is, the program resume command is written). If the suspend command was issued after tPOLL, status data is available immediately after programming resumes. See Figure 24, on page 80. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 77 Advance Information Table 43. Alternate CE# Controlled Erase and Program Operations-S29GL032A Parameter JEDEC tAVAV tAVWL tELAX tDVEH tEHDX tGHEL tWLEL tEHWH tELEH tEHEL Std. tWC tAS tAH tDS tDH tGHEL tWS tWH tCP tCPH Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recovery Time Before Write (OE# High to WE# Low) WE# Setup Time WE# Hold Time CE# Pulse Width CE# Pulse Width High Write Buffer Program Operation (Notes 2, 3) tWHWH1 tWHWH1 Single Word Program Operation (Note 2) Accelerated Single Word Program Operation (Note 2) tWHWH2 tWHWH2 tRH tPOLL Sector Erase Operation (Note 2) RESET# High Time Before Write Program Valid before Status Polling (Note 4) Description Min Min Min Min Min Min Min Min Min Min Typ Typ Typ Typ Min Max Speed Options 90 90 10 100 0 45 35 0 0 0 0 35 25 240 60 54 0.5 50 4 sec ns µs µs 11 110 Unit ns ns ns ns ns ns ns ns ns ns Notes: 1. 2. 3. 4. Not 100% tested. See Erase And Programming Performance on page 81 for more information For 1–16 words/1–32 bytes programmed. If a program suspend command is issued within tPOLL, the device requires tPOLL before reading status data, once programming resumes (that is, the program resume command is written). If the suspend command was issued after tPOLL, status data is available immediately after programming resumes. See Figure 24, on page 80. 78 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Table 44. Alternate CE# Controlled Erase and Program Operations-S29GL016A Parameter JEDEC tAVAV tAVWL tELAX tDVEH tEHDX tGHEL tWLEL tEHWH tELEH tEHEL Std. tWC tAS tAH tDS tDH tGHEL tWS tWH tCP tCPH Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recovery Time Before Write (OE# High to WE# Low) WE# Setup Time WE# Hold Time CE# Pulse Width CE# Pulse Width High Write Buffer Program Operation (Note 2, Note 3) tWHWH1 tWHWH1 Single Word Program Operation (Note 2) Accelerated Single Word Program Operation (Note 2) tWHWH2 tWHWH2 tRH tPOLL Sector Erase Operation (Note 2) RESET# High Time Before Write Program Valid before Status Polling (Note 4) Description Min Min Min Min Min Min Min Min Min Min Typ Typ Typ Typ Min Max Speed Options 90 90 0 45 35 0 0 0 0 35 25 240 60 54 0.5 50 4 sec ns µs µs 10 100 Unit ns ns ns ns ns ns ns ns ns ns Notes: 1. 2. 3. 4. Not 100% tested. See Erase And Programming Performance on page 81 for more information For 1–16 words/1–32 bytes programmed. If a program suspend command is issued within tPOLL, the device requires tPOLL before reading status data, once programming resumes (that is, the program resume command is written). If the suspend command was issued after tPOLL, status data is available immediately after programming resumes. See Figure 24, on page 80 April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 79 Advance Information PBA for program 2AA for erase SA for program buffer to flash SA for sector erase 555 for chip erase Data# Polling PA Addresses tWC tWH WE# tGHEL OE# tCP CE# tWS tCPH tDS tDH Data tRH PBD for program 55 for erase 29 for program buffer to flash 30 for sector erase 10 for chip erase tAS tAH tPOLL tWHWH1 or 2 tBUSY DQ7# DOUT RESET# RY/BY# Notes: 1. 2. 3. 4. Figure indicates last two bus cycles of a program or erase operation. PA = program address, SA = sector address, PD = program data. DQ7# is the complement of the data written to the device. DOUT is the data written to the device. Illustration shows device in word mode Figure 24. Alternate CE# Controlled Write (Erase/Program) Operation Timings 80 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Erase And Programming Performance Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time S29GL016A Chip Erase Time S29GL032A S29GL064A Total Write Buffer Program Time (Notes 3, 5) Total Accelerated Effective Write Buffer Program Time (Notes 4, 5) S29GL016A Chip Program Time S29GL032A S29GL064A Notes: 1. 2. 3. 4. 5. 6. 7. 0.5 17.5 32 64 240 200 16 31.5 63 3.5 35 64 128 µs sec Excludes 00h programming prior to erasure (Note 6) Excludes system level overhead (Note 7) sec Typical program and erase times assume the following conditions: 25°C, VCC = 3.0V, 10,000 cycles; checkerboard data pattern. Under worst case conditions of 90°C; Worst case VCC, 100,000 cycles. Effective programming time (typ) is 15 µs (per word), 7.5 µs (per byte). Effective accelerated programming time (typ) is 12.5 µs (per word), 6.3 µs (per byte). Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure. System-level overhead is the time required to execute the command sequence(s) for the program command. See Table 30 on page 54 and Table 31 on page 55 for further information on command definitions. Table 45. TSOP Pin and BGA Package Capacitance Parameter Symbol CIN Parameter Description Input Capacitance Test Setup VIN = 0 TSOP BGA TSOP BGA TSOP BGA Typ 6 4.2 8.5 5.4 7.5 3.9 Max 7.5 5.0 12 6.5 9 4.7 Unit pF pF pF pF pF pF COUT Output Capacitance VOUT = 0 CIN2 Notes: 1. 2. Control Pin Capacitance VIN = 0 Sampled, not 100% tested. Test conditions TA = 25°C, f = 1.0 MHz. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 81 Advance Information Physical Dimensions TS048—48-Pin Standard Thin Small Outline Package (TSOP) STANDARD PIN OUT (TOP VIEW) A2 2 1 N 0.10 C -A- SEE DETAIL B -BE5 e N 2 N +1 2 9 A1 C SEATING PLANE A 0.08MM (0.0031") M C A-B S D1 D 5 4 B B SEE DETAIL A 7 b 6 7 WITH PLATING (c) c1 b1 R c GAGE LINE e/2 BASE METAL SECTION B-B 0˚ PARALLEL TO SEATING PLANE 0.25MM (0.0098") BSC -X- L X = A OR B DETAIL A DETAIL B Package Jedec Symbol A A1 A2 b1 b c1 c D D1 E e L 0 R N MIN TS 048 MO-142 (B) EC MAX 1.20 0.15 0.05 1.05 1.00 0.95 0.20 0.23 0.17 0.27 0.22 0.17 0.16 0.10 0.21 0.10 19.80 20.00 20.20 18.30 18.40 18.50 11.90 12.00 12.10 0.50 BASIC 0.70 0.50 0.60 3˚ 5˚ 0˚ 0.20 0.08 48 NOM NOTES: 1 2 3 4 CONTROLLING DIMENSIONS ARE IN MILLIMETERS (MM). (DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982) PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP). NOT APPLICABLE. TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE. DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD PROTUSION IS 0.15MM (.0059") PER SIDE. DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR PROTUSION SHALL BE 0.08 (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX. MATERIAL CONDITION. MINIMUM SPACE BETWEEN PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 (0.0028"). THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10MM (.0039") AND 0.25MM (0.0098") FROM THE LEAD TIP. LEAD COPLANARITY SHALL BE WITHIN 0.10MM (0.004") AS MEASURED FROM THE SEATING PLANE. DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS. 3325 \ 16-038.10a 5 6 7 8 9 82 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information TS056—56-Pin Standard Thin Small Outline Package (TSOP) 2X STANDARD PIN OUT (TOP VIEW) 2 1 N 0.10 2X (N/2 TIPS) 2X 0.10 A2 0.10 REVERSE PIN OUT (TOP VIEW) 3 1 N A SEE DETAIL B B E5 N 2 N +1 2 e 9 A1 C SEATING PLANE 0.08MM (0.0031") M C A-B S N 2 N +1 2 D1 D 0.25 2X (N/2 TIPS) 5 4 B A B SEE DETAIL A b 6 7 WITH PLATING 7 (c) c1 b1 SECTION B-B R (c) GAUGE PLANE BASE METAL e/2 PARALLEL TO SEATING PLANE θ° C 0.25MM (0.0098") BSC X X = A OR B L DETAIL A Package Jedec Symbol A A1 A2 b1 b c1 c D D1 E e L 0 R N MIN TS 056 MO-142 (D) EC MAX 1.20 0.15 0.05 1.05 1.00 0.95 0.20 0.23 0.17 0.27 0.22 0.17 0.16 0.10 0.21 0.10 19.80 20.00 20.20 18.30 18.40 18.50 13.90 14.00 14.10 0.50 BASIC 0.70 0.50 0.60 8˚ 0˚ 0.20 0.08 56 NOM DETAIL B NOTES: 1 2 3 4 CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm). (DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982) PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE UP). PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN), INK OR LASER MARK. TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE. DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD PROTUSION IS 0.15mm (.0059") PER SIDE. DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR PROTUSION SHALL BE 0.08 (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX. MATERIAL CONDITION. MINIMUM SPACE BETWEEN PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 (0.0028"). THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10MM (.0039") AND 0.25MM (0.0098") FROM THE LEAD TIP. LEAD COPLANARITY SHALL BE WITHIN 0.10mm (0.004") AS MEASURED FROM THE SEATING PLANE. DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS. 3356 \ 16-038.10c 5 6 7 8 9 April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 83 Advance Information LAA064—64-Ball Fortified Ball Grid Array (BGA) 84 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information VBN048—48-Ball Fine-pitch Ball Grid Array (BGA) 10x 6 mm Package D A D1 e 6 e 5 7 +0.20 1.00 -0.50 E Ø0.50 H G F E D C B A 4 3 2 1 SE E1 +0.20 1.00 -0.50 A1 ID. B 6 Øb Ø0.08 M C Ø0.15 M C A B SD 7 A1 CORNER A A1 SEATING PLANE A2 0.10 C C 0.08 C NOTES: PACKAGE JEDEC VBN 048 N/A 10.00 mm x 6.00 mm NOM PACKAGE SYMBOL A A1 A2 D E D1 E1 MD ME N φb e SD / SE 0.35 MIN --0.17 0.62 NOM ------10.00 BSC. 6.00 BSC. 5.60 BSC. 4.00 BSC. 8 6 48 --0.80 BSC. 0.40 BSC. NONE 0.45 MAX 1.00 --0.73 NOTE OVERALL THICKNESS BALL HEIGHT BODY THICKNESS BODY SIZE BODY SIZE BALL FOOTPRINT BALL FOOTPRINT ROW MATRIX SIZE D DIRECTION ROW MATRIX SIZE E DIRECTION TOTAL BALL COUNT BALL DIAMETER BALL PITCH SOLDER BALL PLACEMENT DEPOPULATED SOLDER BALLS 6 7 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. 2. ALL DIMENSIONS ARE IN MILLIMETERS. 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT AS NOTED). 4. e REPRESENTS THE SOLDER BALL GRID PITCH. 5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE "E" DIRECTION. N IS THE TOTAL NUMBER OF SOLDER BALLS. DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. NOT USED. 9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. 3425\ 16-038.25 April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 85 Advance Information VBK048—Ball Fine-pitch Ball Grid Array (BGA) 8.15x 6.15 mm Package 0.10 (4X) D A D1 6 5 e 7 4 3 2 1 H G F E D C B A E SE E1 PIN A1 CORNER INDEX MARK B 6 φb φ 0.08 M C φ 0.15 M C A B SD 7 A1 CORNER 10 TOP VIEW BOTTOM VIEW A A1 SEATING PLANE A2 0.10 C C 0.08 C SIDE VIEW NOTES: PACKAGE JEDEC VBK 048 N/A 8.15 mm x 6.15 mm NOM PACKAGE SYMBOL A A1 A2 D E D1 E1 MD ME N φb e SD / SE 0.35 MIN --0.18 0.62 NOM ------8.15 BSC. 6.15 BSC. 5.60 BSC. 4.00 BSC. 8 6 48 --0.80 BSC. 0.40 BSC. --0.43 MAX 1.00 --0.76 NOTE OVERALL THICKNESS BALL HEIGHT BODY THICKNESS BODY SIZE BODY SIZE BALL FOOTPRINT BALL FOOTPRINT ROW MATRIX SIZE D DIRECTION ROW MATRIX SIZE E DIRECTION TOTAL BALL COUNT BALL DIAMETER BALL PITCH SOLDER BALL PLACEMENT DEPOPULATED SOLDER BALLS 6 7 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. 2. ALL DIMENSIONS ARE IN MILLIMETERS. 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT AS NOTED). 4. e REPRESENTS THE SOLDER BALL GRID PITCH. 5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE "E" DIRECTION. N IS THE TOTAL NUMBER OF SOLDER BALLS. DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. NOT USED. 9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. 3338 \ 16-038.25 \ 10.05.04 86 S29GL-A MirrorBit™ Flash Family S29GL-A_00_A3 April 22, 2005 Advance Information Revision Summary Revision A (October 13, 2004) Initial Release. Revision A1 (December 17, 2004)s Secured Silicon Sector Flash Memory Region Updated Secured Silicon Sector address table with addresses in x8-mode. DC Characteristics (CMOS Compatible) ILIT re-specified over temperature. Corrected WP#/ACC input load current footnote. Revision A2 (January 28, 2005) Global Added S29GL032A information. Revision A3 (April 22, 2005) Added S29GL016A information. Corrected Secured Silicon Sector Indicator Bit in Table 15. Colophon The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to you and/or any third party for any claims or damages arising in connection with abovementioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products. Trademarks and Notice The contents of this document are subject to change without notice. This document may contain information on a Spansion product under development by Spansion LLC. Spansion LLC reserves the right to change or discontinue work on any product without notice. The information in this document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion LLC assumes no liability for any damages of any kind arising out of the use of the information in this document. Copyright © 2004 – 2005 Spansion LLC. All rights reserved. Spansion, the Spansion logo, MirrorBit, combinations thereof, and ExpressFlash are trademarks of Spansion LLC. Other company and product names used in this publication are for identification purposes only and may be trademarks of their respective companies. April 22, 2005 S29GL-A_00_A3 S29GL-A MirrorBit™ Flash Family 87