S29WS512N

S71WS-N Stacked Multi-Chip Product (MCP) 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM™ Data Sheet (Advance Information) S71WS-N Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information, Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions. Publication Number S71WS-N_00 Revision A Amendment 6 Issue Date July 19, 2006 Data Sheet (Advance Information) Notice On Data Sheet Designations Spansion Inc. issues data sheets with Advance Information or Preliminary designations to advise readers of product information or intended specifications throughout the product life cycle, including development, qualification, initial production, and full production. In all cases, however, readers are encouraged to verify that they have the latest information before finalizing their design. The following descriptions of Spansion data sheet designations are presented here to highlight their presence and definitions. Advance Information The Advance Information designation indicates that Spansion Inc. is developing one or more specific products, but has not committed any design to production. Information presented in a document with this designation is likely to change, and in some cases, development on the product may discontinue. Spansion Inc. therefore places the following conditions upon Advance Information content: “This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.” Preliminary The Preliminary designation indicates that the product development has progressed such that a commitment to production has taken place. This designation covers several aspects of the product life cycle, including product qualification, initial production, and the subsequent phases in the manufacturing process that occur before full production is achieved. Changes to the technical specifications presented in a Preliminary document should be expected while keeping these aspects of production under consideration. Spansion places the following conditions upon Preliminary content: “This document states the current technical specifications regarding the Spansion product(s) described herein. The Preliminary status of this document indicates that product qualification has been completed, and that initial production has begun. Due to the phases of the manufacturing process that require maintaining efficiency and quality, this document may be revised by subsequent versions or modifications due to changes in technical specifications.” Combination Some data sheets contain a combination of products with different designations (Advance Information, Preliminary, or Full Production). This type of document distinguishes these products and their designations wherever necessary, typically on the first page, the ordering information page, and pages with the DC Characteristics table and the AC Erase and Program table (in the table notes). The disclaimer on the first page refers the reader to the notice on this page. Full Production (No Designation on Document) When a product has been in production for a period of time such that no changes or only nominal changes are expected, the Preliminary designation is removed from the data sheet. Nominal changes may include those affecting the number of ordering part numbers available, such as the addition or deletion of a speed option, temperature range, package type, or VIO range. Changes may also include those needed to clarify a description or to correct a typographical error or incorrect specification. Spansion Inc. applies the following conditions to documents in this category: “This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient production volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid combinations offered may occur.” Questions regarding these document designations may be directed to your local sales office. ii S71WS-N S71WS-N_00_A6 July 19, 2006 S71WS-N Stacked Multi-Chip Product (MCP) 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM™ Data Sheet (Advance Information) Features Power supply voltage of 1.7 V to 1.95 V Burst Speed: 54 MHz, 66 MHz, 80 MHz Package – 8 x 11.6 mm, 9 x 12 mm Operating Temperature – Wireless, –25° C to +85° C General Description The S71WS-N Series is a product line of stacked Multi-Chip Product (MCP) packages and consists of the following items: One or more flash memory die (for the S71WS512N, two S29WS256N devices are used) CellularRAM Type 2 pSRAM The products covered by this document are listed in the table below. For details about their specifications, please refer to the individual constituent datasheet for further details. pSRAM Flash Density S29WS128N S29WS256N S29WS512N 32 Mb S71WS128NB0 64 Mb S71WS128NC0 S71WS256NC0 S71WS512NC0 S71WS256ND0 S71WS512ND0 128 Mb For detailed specifications, please refer to the individual data sheets. Document S29WS-N 128 M CellularRAM Type 2 32 M CellularRAM Type 2 64 M CellularRAM Type 2 Publication Identification Number (PID) S29WS-N_00 Cellram_04 Cellram_06 Cellram_07 Publication Number S71WS-N_00 Revision A Amendment 6 Issue Date July 19, 2006 This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice. Data Sheet (Advance Information) 1. Product Selector Guide Model Numbers AK 54 AP AJ S71WS128NB0 AN AH 80 AM AK 54 AP AJ S71WS128NC0 AN AH 80 AM AK 54 AP AJ S71WS256NC0 AN AH 80 AM WS256N YK 54 YP YJ S71WS256ND0 YN YH 80 YM AK 54 AP TJ S71WS512NC0 TN TH 80 TM WS512N EK 54 EP EJ S71WS512ND0 EN EH 80 EM Note: 0 (Protected), 1 (Unprotected [Default State]) 80 1 128 66 66 1 0 54 1 0 2 9x12x1.4 0 80 1 64 66 66 1 11.6x8.0x1.4 0 2 54 1 0 2 80 1 0 2 11.6x8.0x1.2 128 66 66 1 0 54 1 0 2 9x12x1.2 0 80 1 64 66 66 1 0 2 54 1 0 2 11.6x8.0x1.2 80 1 0 2 WS128N 64 66 66 1 0 54 1 0 2 8.0X11.6X1.2 80 1 0 WS128N 32 66 66 1 0 54 1 0 2 8.0X11.6X1.2 pSRAM Density (Mb) Flash Speed (MHz) pSRAM Speed (MHz) DYB Power-Up State (See Note) 0 pSRAM (Cellular RAM) Supplier Package (mm) Device Flash 2 S71WS-N S71WS-N_00_A6 July 19, 2006 Data Sheet (Advance Information) 2. Ordering Information The order number is formed by a valid combinations of the following: S71WS 256 N C 0 BA W A K 0 Packing Type 0 = Tray 2 = 7” Tape and Reel 3 = 13” Tape and Reel RAM Supplier, DYB Power Up, Speed Combinations K = 2 = CellularRAM 2, 0, 54 MHz P = 2 = CellularRAM 2, 1, 54 MHz J = 2 = CellularRAM 2, 0, 66 MHz N = 2 = CellularRAM 2, 1, 66 MHz H = 2 = CellularRAM 2, 0, 80 MHz M = 2 = CellularRAM 2, 1, 80 MHz Package Modifier A = 8x11.6x1.2 mm, 84-ball FBGA T = 8x11.6x1.4 mm, 84-ball FBGA E = 9x12x1.4 mm, 84-ball FBGA Y = 9x12x1.2 mm, 84-ball FBGA Temperature Range W = Wireless (-25°C to +85°C) Package Type BA = Very Thin FIne-Pitch BGA, Lead (Pb)-free Compliant Package BF = Very Thin FIne-Pitch BGA, Lead (Pb)-free Package Chip Contents—2 No content pSRAM Density B = 32 Mb C = 64 Mb D = 128 Mb Process Technology N = 110-nm MirrorBit™ Technology Code Flash Density 512= 512 Mb (2x256Mb) 256= 256 Mb 128= 128 Mb Product Family S71WS = Multi-Chip Product, 1.8 Volt-only Simultaneous Read/Write Burst Mode Flash Memory + pSRAM 2.1 Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm availability of specific valid combinations and to check on newly released combinations. Table 2.1 MCP Configurations and Valid Combinations Valid Combinations B S71WS128N C C S71WS256N D C S71WS512N D Package Marking Note: The package marking omits the leading S from the ordering part number. T E J, N, H, M K, P, J, N, H, M 0 BAW, BFW Y A K, P, J, N, H, M K, P, H, M A A K, P, J, N, H, M K, P, J, N, H, M A K, P, J, N, H, M July 19, 2006 S71WS-N_00_A6 S71WS-N 3 Data Sheet (Advance Information) 3. Input/Output Descriptions Table 3.1 identifies the input and output package connections provided on the device. Table 3.1 Input/Output Descriptions Symbol A23-A0 DQ15-DQ0 OE# WE# VSS NC RDY CLK Address inputs Data input/output Output Enable input. Asynchronous relative to CLK for the Burst mode. Write Enable input. Ground No Connect; not connected internally Ready output. Indicates the status of the Burst read. The WAIT# pin of the pSRAM is tied to RDY. Clock input. In burst mode, after the initial word is output, subsequent active edges of CLK increment the internal address counter. Should be at VIL or VIH while in asynchronous mode Address Valid input. Indicates to device that the valid address is present on the address inputs. AVD# Low = for asynchronous mode, indicates valid address; for burst mode, causes starting address to be latched. High = device ignores address inputs F-RST# F-WP# F-ACC R-CE1# F1-CE# F2-CE# R-CRE F-VCC R-VCC R-UB# R-LB# DNU Hardware reset input. Low = device resets and returns to reading array data Hardware write protect input. At VIL, disables program and erase functions in the four outermost sectors. Should be at VIH for all other conditions. Accelerated input. At VHH, accelerates programming; automatically places device in unlock bypass mode. At VIL, disables all program and erase functions. Should be at VIH for all other conditions. Chip-enable input for pSRAM. Chip-enable input for Flash 1. Asynchronous relative to CLK for Burst Mode. Chip-enable input for Flash 2. Asynchronous relative to CLK for Burst Mode. This applies to the 512Mb MCP only. Control Register Enable (pSRAM). For CellularRAM only. Flash 1.8 Volt-only single power supply. pSRAM Power Supply. Upper Byte Control (pSRAM). Lower Byte Control (pSRAM) Do Not Use Description 4 S71WS-N S71WS-N_00_A6 July 19, 2006 Data Sheet (Advance Information) 4. MCP Block Diagram F-VCC Flash-only Address Shared Address CLK WP# ACC F1-CE# OE# WE# F-RST# AVD# F2-CE# R-VCC 22 VCC CLK CE# WE# OE# UB# LB# VCCQ 16 VCC VID 22 (Note 2) DQ15 to DQ0 CLK WP# ACC Flash 1 CE# (Note 4) Flash 2 OE# WE# RESET# RDY AVD# 16 DQ15 to DQ0 RDY VSS (Note 2) I/O15 to I/O0 pSRAM WAIT# VSSQ R-CE1# R-UB# R-LB# R-CE2 (Note 1) R-CRE AVD# CRE# Notes: 1. R-CRE is only present in CellularRAM-compatible pSRAM. 2. For 1 Flash + pSRAM, F1-CE# = CE#. For 2 Flash + pSRAM, CE# = F1-CE# and F2-CE# is the chip-enable pin for the second Flash. 3. Only needed for S71WS512N. 4. For the 128M pSRAM devices, there are 23 shared addresses. 5. Connection Diagrams/Physical Dimensions This section contains the I/O designations and package specifications for the S71WS-N. 5.1 Special Handling Instructions for FBGA Packages Special handling is required for Flash Memory products in FBGA packages. Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. July 19, 2006 S71WS-N_00_A6 S71WS-N 5 Data Sheet (Advance Information) 5.2 5.2.1 Connection Diagrams CellularRAM Based Pinout 84-ball Fine-Pitch Ball Grid Array CellularRAM-based Pinout (Top View, Balls Facing Down) Legend A1 DNU B2 AVD# C2 F-WP# D2 A3 E2 A2 F2 A1 G2 A0 H2 F1-CE# J2 R-CE1# K2 RFU L2 RFU M1 DNU B3 RFU C3 A7 D3 A6 E3 A5 F3 A4 G3 VSS H3 OE# J3 DQ0 K3 DQ8 L3 RFU B4 CLK C4 R-LB# D4 B5 F2-CE# C5 ACC D5 B6 RFU C6 WE# D6 RFU E6 A20 F6 A23 G6 RFU H6 DQ4 J6 R-VCC K6 RFU L6 RFU B7 RFU C7 A8 D7 A19 E7 A9 F7 A10 G7 DQ6 H7 DQ13 J7 DQ12 K7 DQ5 L7 RFU B8 RFU C8 A11 D8 A12 E8 A13 F8 A14 G8 RFU H8 DQ15 J8 DQ7 K8 DQ14 L8 RFU B9 RFU C9 RFU D9 A10 DNU Shared Flash Shared only 1st Flash only A15 E9 A21 F9 A22 G9 A16 H9 R-CRE J9 VSS K9 RFU L9 RFU M10 DNU RAM only 2nd Flash only R-UB# F-RST# E4 A18 F4 A17 G4 DQ1 H4 DQ9 J4 DQ10 K4 DQ2 L4 RFU E5 RDY F5 RFU G5 RFU H5 DQ3 J5 F-VCC K5 DQ11 L5 F-VCC Notes: 1. In MCPs based on a single S29WS256N (S71WS256N), ball B5 is RFU. In MCP's based on two S29WS256N (S71WS512), ball B5 is F2-CE#. 2. Addresses are shared between Flash and RAM depending on the density of the pSRAM. MCP S71WS128NB0 S71WS128NC0 S71WS256NC0 S71WS256ND0 S71WS512NC0 S71WS512ND0 Flash-only Addresses A22-A21 A22 A23 – A22 A23 A23 – A22 A23 Shared Addresses A20-A0 A21-A0 A21 – A0 A22 – A0 A21-A0 A22-A0 6 S71WS-N S71WS-N_00_A6 July 19, 2006 Data Sheet (Advance Information) 5.2.2 Look-Ahead Pinout for Future Designs Please refer to the Design-in Scalable Wireless Solutions with Spansion Products application note (publication number: Design_Scalable_Wireless_A0_E). Contact your local Spansion sales representative for more details. 5.3 5.3.1 Physical Dimensions TLA084—84-ball Fine-Pitch Ball Grid Array (FBGA) 11.6 x 8.0 x 1.2 mm D 0.15 C (2X) 10 9 8 7 6 5 4 A D1 eD SE 7 E1 E eE 3 2 1 INDEX MARK PIN A1 CORNER 10 MLKJ HG F EDC BA B 7 TOP VIEW 0.15 C (2X) SD PIN A1 CORNER BOTTOM VIEW A A2 A1 6 0.20 C C 0.08 C SIDE VIEW b M CAB MC 84X 0.15 0.08 NOTES: PACKAGE JEDEC DxE SYMBOL A A1 A2 D E D1 E1 MD ME n Øb eE eD SD / SE 0.35 TLA 084 N/A 11.60 mm x 8.00 mm PACKAGE MIN --0.17 0.81 NOM ------11.60 BSC. 8.00 BSC. 8.80 BSC. 7.20 BSC. 12 10 84 0.40 0.80 BSC. 0.80 BSC 0.40 BSC. 0.45 MAX 1.20 --0.97 PROFILE BALL HEIGHT BODY THICKNESS BODY SIZE BODY SIZE MATRIX FOOTPRINT MATRIX FOOTPRINT MATRIX SIZE D DIRECTION MATRIX SIZE E DIRECTION BALL COUNT BALL DIAMETER BALL PITCH BALL PITCH SOLDER BALL PLACEMENT 9. 8. 7 6 NOTE 2. 3. 4. 5. 1. DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994. ALL DIMENSIONS ARE IN MILLIMETERS. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010. e REPRESENTS THE SOLDER BALL GRID PITCH. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION. n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME. DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. N/A A2,A3,A4,A5,A6,A7,A8,A9 DEPOPULATED SOLDER BALLS B1,B10,C1,C10,D1,D10, E1,E10,F1,F10,G1,G10, H1,H10,J1,J10,K1,K10,L1,L10, M2,M3,M4,M5,M6,M7,M8,M9 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. 3372-2 \ 16-038.22a July 19, 2006 S71WS-N_00_A6 S71WS-N 7 Data Sheet (Advance Information) 5.3.2 FTA084—84-ball Fine-Pitch Ball Grid Array (FBGA) 11.6 x 8.0 x 1.4 mm D 0.15 C (2X) 10 9 8 7 6 5 4 A D1 eD SE 7 E1 E eE INDEX MARK PIN A1 CORNER 10 3 2 1 MLKJ HG F EDC BA B 7 TOP VIEW 0.15 C (2X) SD PIN A1 CORNER BOTTOM VIEW 0.20 C A A2 A1 6 C 0.08 C SIDE VIEW b 84X 0.15 M C A B 0.08 M C NOTES: PACKAGE JEDEC DxE SYMBOL A A1 A2 D E D1 E1 MD ME n φb eE eD SD / SE 0.35 FTA 084 N/A 11.60 mm x 8.00 mm PACKAGE MIN --0.17 1.02 NOM ------11.60 BSC. 8.00 BSC. 8.80 BSC. 7.20 BSC. 12 10 84 0.40 0.80 BSC. 0.80 BSC 0.40 BSC. 0.45 MAX 1.40 --1.17 PROFILE BALL HEIGHT BODY THICKNESS BODY SIZE BODY SIZE MATRIX FOOTPRINT MATRIX FOOTPRINT MATRIX SIZE D DIRECTION MATRIX SIZE E DIRECTION BALL COUNT BALL DIAMETER BALL PITCH BALL PITCH SOLDER BALL PLACEMENT 9. 8. 7 6 NOTE 2. 3. 4. 5. 1. DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994. ALL DIMENSIONS ARE IN MILLIMETERS. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010. e REPRESENTS THE SOLDER BALL GRID PITCH. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION. n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME. DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. N/A A2,A3,A4,A5,A6,A7,A8,A9 DEPOPULATED SOLDER BALLS B1,B10,C1,C10,D1,D10,E1,E10 F1,F10,G1,G10,H1,H10 J1,J10,K1,K10,L1,L10 M2,M3,M4,M5,M6,M7,M8,M9 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. 3388 \ 16-038.21a 8 S71WS-N S71WS-N_00_A6 July 19, 2006 Data Sheet (Advance Information) 5.3.3 TSD084—84-ball Fine-Pitch Ball Grid Array (FBGA) 12.0 x 9.0 x 1.2 mm D 0.15 C (2X) 10 9 8 7 6 5 4 A D1 eD SE 7 E1 E eE 3 2 1 INDEX MARK PIN A1 CORNER 10 MLKJ HG F EDC BA B 7 TOP VIEW 0.15 C (2X) SD PIN A1 CORNER BOTTOM VIEW 0.20 C A A2 A1 6 C 0.08 C SIDE VIEW b MCAB MC 84X 0.15 0.08 NOTES: PACKAGE JEDEC DxE SYMBOL A A1 A2 D E D1 E1 MD ME n φb eE eD SD / SE 0.35 TSD 084 N/A 12.00 mm x 9.00 mm PACKAGE MIN --0.17 0.81 NOM ------12.00 BSC. 9.00 BSC. 8.80 BSC. 7.20 BSC. 12 10 84 0.40 0.80 BSC. 0.80 BSC 0.40 BSC. 0.45 MAX 1.20 --0.94 PROFILE BALL HEIGHT BODY THICKNESS BODY SIZE BODY SIZE MATRIX FOOTPRINT MATRIX FOOTPRINT MATRIX SIZE D DIRECTION MATRIX SIZE E DIRECTION BALL COUNT BALL DIAMETER BALL PITCH BALL PITCH SOLDER BALL PLACEMENT 9. 8. 7 6 NOTE 2. 3. 4. 5. 1. DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994. ALL DIMENSIONS ARE IN MILLIMETERS. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010. e REPRESENTS THE SOLDER BALL GRID PITCH. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION. n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME. DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. N/A A2,A3,A4,A5,A6,7,A8,A9 DEPOPULATED SOLDER BALLS B1,B10,C1,C10,D1,D10 E1,E10,F1,F10,G1,G10 H1,H10,J1,J10,K1,K10,L1,L10 M2,M3,M4,M5,M6,M7,M8,M9 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. 3426\ 16-038.22 July 19, 2006 S71WS-N_00_A6 S71WS-N 9 Data Sheet (Advance Information) 5.3.4 FEA084—84-ball Fine-Pitch Ball Grid Array (FBGA) 12.0 x 9.0 x 1.4 mm D 0.15 C (2X) 10 9 8 7 6 5 4 A D1 eD SE 7 E1 E eE 3 2 1 INDEX MARK PIN A1 CORNER 10 MLKJ HG F EDC BA B 7 TOP VIEW 0.15 C (2X) SD PIN A1 CORNER BOTTOM VIEW A A2 A1 6 0.20 C C 0.08 C SIDE VIEW b M CAB MC 84X 0.15 0.08 NOTES: PACKAGE JEDEC DxE SYMBOL A A1 A2 D E D1 E1 MD ME n Øb eE eD SD / SE 0.35 FEA 084 N/A 12.00 mm x 9.00 mm PACKAGE MIN --0.10 1.11 NOM ------12.00 BSC. 9.00 BSC. 8.80 BSC. 7.20 BSC. 12 10 84 0.40 0.80 BSC. 0.80 BSC 0.40 BSC. A2,A3,A4,A5,A6,A7,A8,A9 B1,B10,C1,C10,D1,D10 E1,E10,F1,F10,G1,G10 H1,H10,J1,J10,K1,K10,L1,L10 M2,M3,M4,M5,M6,M7,M8,M9 0.45 MAX 1.40 --1.26 PROFILE BALL HEIGHT BODY THICKNESS BODY SIZE BODY SIZE MATRIX FOOTPRINT MATRIX FOOTPRINT MATRIX SIZE D DIRECTION MATRIX SIZE E DIRECTION BALL COUNT BALL DIAMETER BALL PITCH BALL PITCH SOLDER BALL PLACEMENT DEPOPULATED SOLDER BALLS 9. 8. 7 6 NOTE 2. 3. 4. 5. 1. DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994. ALL DIMENSIONS ARE IN MILLIMETERS. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010. e REPRESENTS THE SOLDER BALL GRID PITCH. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION. n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME. DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. N/A 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. 3423 \ 16-038.21a Note: BSC is an ANSI standard for Basic Space Centering. 10 S71WS-N S71WS-N_00_A6 July 19, 2006 Data Sheet (Advance Information) 6. Revision History Section Description Revision A (February 1, 2004) Initial release. Revision A1 (February 9, 2005) Global Revision A2 (March 31, 2005) Global Revision A3 (May 2, 2005) Added 80 MHz speed options to: Global Product Selector Guide Ordering Information table Valid Combination table Updated document to include Burst Speed of 66 MHz Updated Publication Number Updated Product Selector Guide and Ordering Information tables Revision A4 (August 25, 2005) Global Revision A5 (February 7, 2006) Updated Product Selector Guide with new options Global Updated the Ordering Part Number table Updated the Valid Combinations table Removed the Look-ahead Diagram Revision A6 (July 19, 2006) Global Reformatted document to new template Added reference to 32 Mb CellRAM module Replaced module cellRAM_00_A0 with cellRAM_03 and cellRAM_04 Colophon The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products. Trademarks and Notice The contents of this document are subject to change without notice. This document may contain information on a Spansion product under development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any damages of any kind arising out of the use of the information in this document. Copyright © 2004-2006 Spansion Inc. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof are trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners. July 19, 2006 S71WS-N_00_A6 S71WS-N 11