TM3019

RF AMPLIFIER MODEL TM3019 Features ! ! ! ! GaAs FET Amplifier High Output Power: +22 dBm Typical Operating Temp. - 30 ºC to + 71 ºC Environmental Screening Available Available as: TM3019, 4 Pin TO-8 (T4) TN3019, 4 Pin Surface Mount (SM3) BX3019, Connectorized Housing (H1) Typical Intermodulation Performance at 25 º C Second Order Harmonic Intercept Point ....... +55 dBm (Typ.) Second Order Two Tone Intercept Point ........ +50 dBm (Typ.) Third Order Two Tone Intercept Point ............ +36 dBm (Typ.) Specifications CHARACTERISTIC Frequency Gain (dB) Power @ 1 dB Comp. (dBm) Reverse Isolation (dB) VSWR In Out Noise Figure (dB) Power Vdc mA TYPICAL Ta= 25 ºC 500 - 1300 MHz 13.5 +22 -21.5