1SMA110Z

1SMA4741 thru 1SMA200Z SURFACE MOUNT SILICON ZENDER DIODE PRODUCT SUMMARY 1.0 Watts Surface Mount FEATURES For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0uA above 11V High temperature soldering guaranteed: 260°C / 10 seconds at terminals Plastic package has Underwriters Laboratory Flammability Classification 94V-0 SMA/DO-214AC MECANICAL DATA Case: Molded plastic over passivated junction Terminals: Pure tin plated lead free, solderable per MIL-STD-750, Method 2025 Polarity:Color Band denotes positive end (cathode) Standard packaging: 12mm tape (EIA-481) Weight: 0.002 ounces, 0.064 gram Dimensions in inches and (millimeters) Pb-free; RoHS-compliant MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o (Ratings at 25 C ambient temperature unless otherwise specified.) Type Number Peak Power Dissipation at TA=50 C, Derate above o 50 C ( Note 1 ) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) ( Note 2 ) o Symbol PD IFSM Value 1.0 6.67 10.0 Units Watts mW/ oC Amps o Operating and Storage Temperature Range TJ, TSTG -55 to + 150 C 2 1. Mounted on 5.0mm (0.013mm thick) land areas. Notes: 2. Measured on 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minute Maximum 08/22/2007 Rev.1.00 www.SiliconStandard.com 1 1SMA4741 thru 1SMA200Z ELECTRICAL CHARACTERISTICS o (TA=25 C unless otherwise noted) VF=1.2V max, IF=200mA for all types. Device (Note 1) 1SMA4741 1SMA4742 1SMA4743 1SMA4744 1SMA4745 1SMA4746 1SMA4747 1SMA4748 1SMA4749 1SMA4750 1SMA4751 1SMA4752 1SMA4753 1SMA4754 1SMA4755 1SMA4756 1SMA4757 1SMA4758 1SMA4759 1SMA4760 1SMA4761 1SMA4762 1SMA4763 1SMA4764 1SMA110Z 1SMA120Z 1SMA130Z 1SMA150Z 1SMA160Z 1SMA180Z 1SMA200Z Device Marking Code 741A 742A 743A 744A 745A 746A 747A 748A 749A 750A 751A 752A 753A 754A 755A 756A 757A 758A 759A 760A 761A 762A 763A 764A 110A 120A 130A 150A 160A 180A 200A Nominal Zener Voltage Test Vz @ Izt Voltage (Notes 2 & 3) 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 Current IZT mA 23 21 19 17 15.5 14.0 12.5 11.5 10.5 9.5 8.5 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.7 3.3 3.0 2.8 2.5 2.3 2.0 1.9 1.7 1.6 1.4 1.2 Maximum Zener Impedance (Note 4) Leakage Current ZZT @ IZT Ohms 8 9 10 14 16 20 22 23 25 35 40 45 50 60 70 80 95 110 125 150 175 200 250 350 450 550 700 1000 1100 1200 1500 ZZK @ IZK Ohms mA 700 700 700 700 700 750 750 750 750 750 1000 1000 1000 1000 1500 1500 1500 2000 2000 2000 2000 3000 3000 3000 4000 4500 5000 6000 6500 7000 8000 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 IR @ VR uA Max Volts 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 27.4 29.7 32.7 35.8 38.8 42.6 47.1 51.7 56.0 62.2 69.2 76.0 83.6 91.2 98.8 114.0 121.6 136.8 152.0 Surge Current @ O TA = 25 C Ir - mA (Note 5) 414 380 344 304 285 250 225 205 190 170 150 135 125 115 110 95 90 80 70 65 60 55 50 45 - Notes: 1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%. 2. Specials Available Include: A. voltages voltage A. Nominal zener voltages between the voltages shown and tighter voltage tolerances. B. Matched sets. 3. Zener Voltage (VZ) Measurement. Guarantees the zener voltage when messured at 90 seconds while o C± 1o maintaining the lead temperature (TL) at 30 C± 1 C, from the diode body. 4. Zener Impedance (ZZ) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having and rms value equal to 10% of the dc which having zener current (IZT or IZK) is superimposed on IZT or IZK. zener IZK) 5. Surge Current (Ir) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second surge equivalent duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability duration the registration; actual is as described in Figure 10. 08/22/2007 Rev.1.00 www.SiliconStandard.com 2 1SMA4741 thru 1SMA200Z RATINGS ANAD CHARACTERISTIC CURVES (1SMA4741 THRU 1SMA200Z) FIG.1- POWER TEMPERATURE DERATING CURVE PD, MAXIMUM POWER DISSIPATION (WATTS) FIG.2- TYPICAL FORWARD CHARACTERISTICS 1000 500 IF, FORWARD CURRENT (mA) 1.25 MINIMUM MAXIMUM 1.0 200 100 50 20 10 5 2 o 0.75 0.50 70 C 150 C 25 C 0C o o o 0.25 0 0 20 40 60 80 100 120 140 o 1 160 180 200 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 AMBIENT TEMPERATURE( C) VF, FORWARD VOLTAGE (VOLTS) FIG.3- EFFECT OF ZENER CURRENT ON ZENER IMPEDANCE 1000 ZZ, DYNAMIC IMPEDANCE (OHMS) FIG.5- TYPICAL LEAKAGE CURRENT o 500 200 100 50 TJ = 25 C IZ(rms)= 0.1 IZ(dc) f = 1KHz 47V 10000 7000 5000 2000 1000 700 500 200 100 70 50 IR, LEAKAGE CURRENT ( A) TYPICAL LEAKAGE CURRENT AT 80% OF NOMINAL BREAKDOWN VOLTAGE 27V 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 IZ, ZENER CURRENT (mA) 0.8V 20 10 7 5 2 1 0.7 0.5 FIG.4- EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE ZZ, DYNAMIC IMPEDANCE (OHMS) 1000 700 500 200 100 70 50 20 10 7 5 2 1 1 2 3 5 7 IZ = 1.0mA 5.0mA 20mA TJ = 25 C IZ(rms)= 0.1 IZ(dc) f = 1KHz o +125 C 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 0.002 0.001 3 4 5 6 7 8 9 10 11 12 13 14 15 o +25 C o 10 20 30 50 70 100 IZ, ZENER CURRENT (mA) VZ, NOMINAL ZENER VOLTAGE (VOLTS) 08/22/2007 Rev.1.00 www.SiliconStandard.com 3 1SMA4741 thru 1SMA200Z RATINGS ANAD CHARACTERISTIC CURVES (1SMA4741 THRU 1SMA200Z) FIG.6- TYPICAL CAPACITANCE versus Vz 400 300 200 C, CAPACITANCE (pF) FIG.7- TEMPERATURE COEFFICIENTS a-RANGE FOR UNITS TO 12 VOLTS OVZ, TEMPERAYURE COEFFICIENT (mV/oC) +12 +10 +8.0 +6.0 +4.0 +2.0 0 -2.0 -4.0 2 3 4 5 6 7 8 9 10 11 12 VZ, ZENER VOLTAGE (VOLTS) 100 0V BIAS 1.0V BIAS 10 8 4 1 RANGE VZ @ IZT 50% OF BREAKDOWN BIAS 10 VZ, FORWARD VOLTAGE (VOLTS) 100 FIG.8- TEMPERATURE COEFFICIENTS b-RANGE FOR UNITS 11 TO 100 VOLTS FIG.9- EFFECT OF ZENER CURRENT OVZ, TEMPERAYURE COEFFICIENT (mV/oC) OVZ, TEMPERAYURE COEFFICIENT (mV/oC) 100 70 50 30 20 10 7 5 3 2 1 10 20 30 50 70 100 VZ, ZENER VOLTAGE (VOLTS) +6.0 +4.0 VZ @ IZT TJ=25 oC +2.0 RANGE VZ @ IZT 20mA 0 0.01mA 1.0mA NOTE: BELOW 3 VOLTS AND ABOVE a VOLTS CHANGES IN ZENER CURRENT OO NOT AFFECT TEMPERATURE COEFFICIENTS -2.0 -4.0 3 4 5 6 7 8 VZ, ZENER VOLTAGE (VOLTS) FIG.10- MAXIMUM SURGE POWER Ppk, PEAK SURGE POWER IWATTSO 100 70 50 30 20 10 7 5 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 PW, PULSE WIDTH (ms) 0.8V -10V NON 11V -9 -RE PET ITIV E 1V N ON- REP 5% D UTY C ETIT YCLE IVE RECTANGULAR WAVEFORM o TJ = 25 C PRIOR TO INITIAL PULSE 10% DUTY CYCLE 20% DUTY CYCLE Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 08/22/2007 Rev.1.00 www.SiliconStandard.com 4