2N7002

2N7002 N-CHANNEL MOSFET PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability 1. GATE 2. SOURCE 3. DRAIN Pb-free; RoHS-compliant MARKING: 7002 MAXIMUM RATINGS (TA=25 oC unless otherwise noted) Symbol VDS ID PD TJ Tstg Parameter Drain-Source voltage Drain Current Power Dissipation Junction Temperature Storage Temperature Value 60 115 225 150 -55-150 Units V mA mW ℃ ℃ 08/04/2007 Rev.1.00 www.SiliconStandard.com 1 2N7002 ELECTRICAL CHARACTERISTICS (Tamb=25 oC unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current On-state Drain Current Drain-Source On-Resistance Forward Trans conductance Drain-source on-voltage Diode Forward Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS Vth(GS) lGSS IDSS ID(ON) rDS(0n) gfs VDS(on) VSD Ciss COSS CrSS VDS=25V, VGS=0V, f=1MHz Test conditions MIN 60 1 2.5 ±80 80 500 1 1 80 0.5 0.05 0.55 7.5 7.5 500 3.75 0.375 1.2 50 25 5 pF ms V V V nA nA mA Ω TYP MAX UNIT V VGS=0 V, ID=10 μA VDS=VGS, ID=250 μA VDS=0 V, VGS=±25 V VDS=60 V, VGS=0 V VGS=10 V, VDS=7 V VGS=10 V, ID=500mA VGS=5 V, ID=50mA VDS=10 V, ID=200mA VGS=10V, ID=500mA VGS=5V, ID=50mA IS=115mA, VGS=0 V SWITCHING TIME Turn-on Time Turn-off Time td(on) td(off) VDD=25 V, RL=50Ω ID=500mA,VGEN=10 V RG=25 Ω 20 40 ns 08/04/2007 Rev.1.00 www.SiliconStandard.com 2 2N7002 TYPICAL CHARACTERISTICS Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 08/04/2007 Rev.1.00 www.SiliconStandard.com 3