B5817W

B5817W-B5819W SCHOTTKY BARRIER DIODE PRODUCT SUMMARY SOD-123 Plastic-Encapsulate Diode SOD-123 + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. - Pb-free; RoHS-compliant MARKING: B5817W: SJ B5818W: SK B5819W: SL MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Single Diode @TA=25 oC Parameter Non-Repetitive Peak reverse voltage Peak repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Peak forward surge current @=8.3ms Repetitive Peak Forward Current Power Dissipation Thermal Ambient Resistance Junction to Symbol VRM VRRM VRWM VR VR(RMS) IO IFSM IFRM Pd RθJA TSTG B5817W 20 20 14 B5818W 30 30 21 1 25 625 250 500 -65~+150 B5819W 40 40 28 Unit V V V A A mA mW K/W ℃ Storage temperature 08/04/2007 Rev.1.00 www.SiliconStandard.com 1 B5817W-B5819W ELECTRICAL CHARACTERISTICS (Tamb=25 oC unless otherwise specified) Parameter Symbol V(BR) VR=20V VR=30V VR=40V B5817W B5818W B5819W CD Test IR= 1mA Reverse breakdown voltage conditions B5817W B5818W B5819W B5817W B5818W B5819W IF=1A IF=3A Forward voltage VF IF=1A IF=3A IF=1A IF=3A Diode capacitance VR=4V, f=1MHz MIN 20 30 40 1 0.45 0.75 0.55 0.875 0.6 0.9 120 MAX UNIT V Reverse voltage leakage current IR mA V V V pF 08/04/2007 Rev.1.00 www.SiliconStandard.com 2 B5817W-B5819W TYPICAL CHARACTERISTICS 08/04/2007 Rev.1.00 www.SiliconStandard.com 3 B5817W-B5819W Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 08/04/2007 Rev.1.00 www.SiliconStandard.com 4