BAV70

BAV70 SWITCHING DIODE PRODUCT SUMMARY SOD-23 Plastic-Encapsulate Diodes SOT-23 FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance BAW56 Marking: A1 BAV70 Marking: A4 BAV99 Marking: A7 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25°C Parameter Reverse voltage Forward Current Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Air Junction temperature Storage temperature range Symbol VR IF IFM(surge) PD RθJA TJ TSTG Limits 70 200 500 225 556 150 -55-150 Unit V mA mA mW ℃/W ℃ ℃ 01/17/2008 Rev.1.00 www.SiliconStandard.com 1 BAV70 ELECTRICAL CHARACTERISTICS @TA=25°C Parameter Reverse Breakdown Voltage Symbol VR VF1 Forward voltage VF2 VF3 VF4 Reverse current Capacitance between terminals Reverse recovery time IR CT t rr Min. 70 0.715 0.855 1 1.25 2.5 1.5 6 Typ. Max. Unit V V V V V μA pF ns IR=100μA IF=1mA IF=10mA IF=50mA IF=150mA VR=70V VR=0,f=1MHz IF = IR = 10mA, Irr= 0.1 x IR, RL = 100Ω Conditions 01/17/2008 Rev.1.00 www.SiliconStandard.com 2 BAV70 TYPICAL CHARACTERISTICS Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 01/17/2008 Rev.1.00 www.SiliconStandard.com 3