BAV99

BAV99 Surface-mount Dual Switching Diodes Voltage range 75 Volts Power Dissipation 350 mWatts FEATURES Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications High conductance SOT-23 0.020(0.51) 0.015(0.37) 0.055(1.40) 0.047(1.19) 0.098(2.50) 0.083(2.10) MECHANICAL DATA Case: SOT-23, Molded plastic Terminals: Matte tin plating Polarity: See diagram Marking: JE Weight: 0.008 gram (approx.) 0.080(2.05) 0.070(1.78) 0.024(0.61) 0.018(0.45) 0.120(3.05) 0.104(2.65) 0.041(1.05) 0.047(0.89) 0.043(1.10) 0.035(0.89) 0.006(0.15) 0.001(0.013) 0.024(0.61) 0.018(0.45) 0.007(0.178) 0.003(0.076) Dimensions in inches and (millimeters) Pb-free lead finish (second-level interconnect). MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol BAV99 Non-Repetitive Peak Reverse Voltage VRM 100 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Average Rectifier Output Current (Note 1) Non-Repetitive Peak Forward Surge Current @ t=1.0uS @ t=1.0S Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Units V V V mA mA A mW °C/W °C Max 0.715 0.855 1.0 1.25 2.5 50 30 25 VRRM VRWM VR 75 53 300 150 2.0 1.0 VR(RMS) IFM Io IFSM Pd Rthja TJ, TSTG Symbol 350 357 -65 to + 150 Min - Parameter Forward Voltage IF=1.0mA IF= 10mA IF = 50mA IF=150mA VR=75V VR=75V, Tj=150°C VR=25V, TJ=150°C VR=20V VR=0, f=1.0MHz Units V VF Peak Reverse Current IR - Junction Capacitance Cj 2.0 trr 4.0 Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Reverse recovery test conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω Reverse Recovery Time (Note 2) uA nA pF ns 8/26/2004 Rev.1.01 www.SiliconStandard.com 1 of 2 BAV99 RATINGS AND CHARACTERISTIC CURVES FIG.1- FORWARD CHARACTERISTICS FIG.2- LEAKAGE CURRENT VS JUNCTION TEMPERATURE 1000 IF, INSTANTANEOUS FORWARD CURRENT (mA) 10,000 IR, LEAKAGE CURRENT (nA) 100 1000 10 100 1.0 0.1 10 VR =20V 0.01 0 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 2 1 0 100 Tj, JUNCTION TEMPERATURE ( C) 200 In formation furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 8/26/2004 Rev.1.01 www.SiliconStandard.com 2 of 2