BAW56LT1

BAW56LT1 Switching Diode FEATURES Power dissipation, PD: 225 mW (TA=25℃) Forward Current, IF: 200 mA Reverse Voltage, VR: 70 V Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃ SOT-23 Plastic-Encapsulate package Device Making: A1 ELECTRICAL CHARACTERISTICS Note: Unless otherwise specified, these specifications apply over the operating ambient temperature of 25℃. 01/14/2007 Rev. 1.00 www.SiliconStandard.com 1 BAW56LT1 Disclaimer Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 01/14/2007 Rev. 1.00 www.SiliconStandard.com 2