ES1J

ES1M SUPER FAST SURFACE MOUNT RECTIFIERS PRODUCT SUMMARY Reverse Voltage 50 to 1000 Volts Forward current 1.0 Ampere FEATURES For surface mounted application Low profile package Built-in strain relief, Ideal for automated placement Easy pick and place Superfast recovery time for high efficiency Glass passivated chip junction High temperature soldering: o 250 C /10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-O MECHANICAL DATA Cases: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Weight: 0.002 ounce, 0.064 gram Pb-free; RoHS-compliant 07/04/2007 Rev.1.00 www.SiliconStandard.com 1 ES1M MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current S ee F i g. 1 Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage @ 1.0A Maximum DC reverse current at rated DC blocking voltage @ TA=25oC @ TA=100oC Symbols VRRM VRMS V DC I(AV) IFSM VF IR trr CJ RθJA RθJL TJ TSTG 10 85 35 -55 to +150 -55 to +150 0.95 5.0 100 35 8 o o ES 1A 50 35 50 ES 1B 100 70 100 ES 1C 150 105 150 ES 1D 200 140 200 ES 1F 300 210 300 1.0 ES 1G 400 280 400 ES 1J 600 420 600 ES 1K 800 560 800 ES 1M 1000 700 1000 Units Volts Volts Volts Amp 30.0 1.3 1.7 Amps Volts uA uA nS pF C/W o Maximum reverse recovery time (Note 1) Typical junction capacitance (Note 2) Typical thermal resistance (Note 3) Operating junction temperature range Storage temperature range Notes: C C o 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Area. 07/04/2007 Rev.1.00 www.SiliconStandard.com 2 ES1M RATINGS AND CHARACTERISTIC CURVES Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 07/04/2007 Rev.1.00 www.SiliconStandard.com 3