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MBR1050CT

MBR1050CT

  • 厂商:

    SSC

  • 封装:

  • 描述:

    MBR1050CT - Schottky Barrier Recitifier - Silicon Standard Corp.

  • 详情介绍
  • 数据手册
  • 价格&库存
MBR1050CT 数据手册
MBR1030CT-MBR1060CT Schottky Barrier Recitifier PRODUCT SUMMARY TO-220 TO-220 Plastic-Encapsulate Transistors FEATURES Scottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Very low forward voltage drop High Surge Capability High Current Capability and Low Forward Voltage Drop For use in low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications 1. ANODE 2. CATHODE 3. ANODE 123 1 Pb-free; RoHS-compliant ELECTRICAL CHARACTERISTICS ( Tamb = 25oC unless otherwise specified ) Characteristic Symbol 2 3 MBR MBR MBR MBR MBR MBR 1030CT 1035CT 1040CT 1045CT 1050CT 1060CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage PMS Reverse Voltage Average Rectified Output Current (Note 1) @ TC=105℃ Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load @ t≤ 2.0µs Forward Voltage Drop @ IF=5.0A, TC=125℃ @ IF=5.0A, TC= 25℃ @ IF=10A, TC= 25℃ Peak Reverse Current at Rated DC Blocking Voltage @ TC= 25℃ @ TC=125℃ (JEDEC Method) Repetitive Peak Reverse Surge Current VRRM VRWM VR VR(RMS) IO 21 24.5 28 10 31.5 35 42 V A 30 35 40 45 50 60 V IFSM 125 A IRRM 0.57 VFM 0.70 0.84 IRM Cj Tj, TSTG 1.0 0.70 0.80 0.95 0.1 15 150 -65 to +150 A V mA pF ℃ Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range Notes: 1. Thermal resistance junction to case mounted heat sink. 2. Measured at 1.OMHz and applied reverse voltage of 4.0V DC. 01/29/2007 Rev.1.00 www.SiliconStandard.com 1 MBR1030CT-MBR1060CT Schottky Barrier Recitifier Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 01/29/2007 Rev.1.00 www.SiliconStandard.com 2
MBR1050CT
1. 物料型号: - MBR1030CT - MBR1040CT - MBR1045CT - MBR1050CT - MBR1060CT

2. 器件简介: 该器件是肖特基势垒整流器,采用TO-220塑料封装晶体管。具有低功耗、高效率、极低的正向电压降、高浪涌能力和高电流能力,适用于低电压、高频逆变器、续流和极性保护应用。

3. 引脚分配: - 1. 阳极(ANODE) - 2. 阴极(CATHODE) - 3. 阳极(ANODE)

4. 参数特性: - 峰值重复反向电压(VRRM):30V至60V不等 - 工作峰值反向电压(VRWM):与VRRM相同 - 直流阻断电压(VR):与VRRM相同 - 正弦波均方根反向电压(VR(RMS)):21V至42V不等 - 平均整流输出电流(Io):在105°C时,部分型号为10A - 非重复峰值正向浪涌电流(IFSM):125A - 重复峰值反向浪涌电流(IRRM):1.0A - 正向电压(VFM):在5.0A和10A条件下,0.70V至0.95V不等 - 反向峰值电流(IRM):在25°C和125°C时,0.1mA至15mA不等 - 典型结电容(C1):150pF

5. 功能详解: - 器件采用肖特基势垒芯片和保护环结构,提供瞬态保护。 - 低正向电压降,高浪涌能力和高电流能力,适用于低电压、高频逆变器、续流和极性保护应用。

6. 应用信息: - 低电压、高频逆变器 - 续流应用 - 极性保护

7. 封装信息: - 采用TO-220塑料封装。
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