MMBT3904LT1

MMBT3904LT1 Transistors (NPN) FEATURES Power dissipation, PCM: 0.2W (Tamb=25℃) Collector current, ICM: 0.2A Collector-base voltage, V(BR)CBO: 60V Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃ SOT-23 plastic-encapsulate package Device Marking: AM1 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol V(BR)CBO V(BR)CEO Test Conditions Ic= 100 µA, IE=0 VIc= 1 mA, IB=0 Min 60 40 Max Unit V V Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain V(BR)EBO ICBO ICEO IEBO HFE(1) HFE(2) IE= 100µA, IC=0 VCB= 60V, IE=0 VCE= 40V, IB=0 VEB= 5V, IC=0 VCE=10V, IC= 1mA VCE= 1V, IC= 50mA IC=50mA, IB= 5mA IC= 50mA, IB= 5mA VCE= 20V, IC= 10mA f=100MHz 6 0.1 0.1 0.1 100 60 300 0.3 0.95 250 V µA µA µA Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT V V MHz Delay Time Rise Time Storage Time Fall Time td tr ts tf VCC=3.0Vdc,VBE=0.5Vdc IC=10mAdc,IB1=1.0mAdc VCC=3.0Vdc, IC=10mAdc IB1=IB2=1.0mAdc 35 35 200 50 nS nS nS nS Note: Unless otherwise specified, these specifications apply over the operating ambient temperature of 25℃. 12/16/2006 Rev. 1.00 www.SiliconStandard.com 1 MMBT3904LT1 Disclaimer Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 12/16/2006 Rev. 1.00 www.SiliconStandard.com 2