P4SMA33A

P4SMAX SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS PRODUCT SUMMARY Peak Pulse Power 400W Breakdown Voltage 6.8 to 550V FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Optimized for LAN protection applications Ideal for ESD protection of data lines in accordance with IEC 1000-4-2 (IEC801-2) Ideal for EFT protection of data lines in accordance with IEC1000-4-4 (IEC801-4) Low profile package with built-in strain relief for surface mounted applications Glass passivated junction Low incremental surge resistance, excellent clamping capability 400W peak pulse power capability with a 10/1000us waveform, repetition rate (duty cycle): 0.01% (300W above 91V) Very Fast response time High temperature soldering guaranteed: 250°C/10 seconds at terminals MECANICAL DATA Case: JEDEC DO-214AC molded plastic over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: 0.002 oz., 0.064 g Devices for Bidirectional Applications For bi-directional devices, use suffix CA (e.g. P4SMA10CA). Electrical characteristics apply in both directions. Pb-free; RoHS-compliant 04/13/2007 Rev.1.00 www.SiliconStandard.com 1 P4SMAX MAXIMUM RATINGS AND CHARACTERISTICS o (TA= 25 C unless otherwise noted.) Parameter Peak pulse power dissipation with a 10/1000us waveform (Fig. 1) Peak pulse current with a 10/1000us waveform Power dissipation on infinite heatsink, TA=50oC Peak forward surge current, 8.3ms single half sine-wave uni-directional only (2) Thermal resistance junction to ambient air (3) Thermal resistance junction to leads Operating junction and storage temperature range (1) (1)(2) Symbol P PPM IPPM PM(AV) IFSM RθJA RθJL TJ, TSTG o Value 400 See Next Table 1.0 40 120 30 -55 to +150 Unit W A W A o (Fig. 3) C/W C/W o o C Notes: 1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25 C per Fig. 2. Rating is 300W above 91V. 2. Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal 3. Mounted on minimum recommended pad layout 04/13/2007 Rev.1.00 www.SiliconStandard.com 2 P4SMAX ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only) o Device marking co d e Device type P4SMA6.8A P4SMA7.5A P4SMA8.2A P4SMA9.1A P4SMA10A P4SMA11A P4SMA12A P4SMA13A P4SMA15A P4SMA16A P4SMA18A P4SMA20A P4SMA22A P4SMA24A P4SMA27A P4SMA30A P4SMA33A P4SMA36A P4SMA39A P4SMA43A P4SMA47A P4SMA51A P4SMA56A P4SMA62A P4SMA68A P4SMA75A P4SMA82A P4SMA91A P4SMA100A P4SMA110A P4SMA120A P4SMA130A P4SMA150A P4SMA160A P4SMA170A P4SMA180A P4SMA200A P4SMA220A P4SMA250A P4SMA300A P4SMA350A P4SMA400A P4SMA440A P4SMA480A P4SMA510A P4SMA530A P4SMA540A P4SMA550A UNI 6V 8A 7V 5A 8V 2A 9V 1A 10A 11A 12A 13A 15A 16A 18A 20A 22A 24A 27A 30A 33A 36A 39A 43A 47A 51A 56A 62A 68A 75A 82A 91A 100A 110A 120A 130A 150A 160A 170A 180A 200A 220A 250A 300A 350A 400A 440A 480A 510A 530A 540A 550A BI 6V 8C 7V 5C 8V 2C 9V 1C 10C 11C 12C 13C 15C 16C 18C 20C 22C 24C 27C 30C 33C 36C 39C 43C 47C 51C 56C 62C 68C 75C 82C 91C 100C 110C 120C 130C 150C 160C 170C 180C 200C 220C 250C 300C 350C 400C 440C 480C 510C 530C 540C 550C Breakdow n voltage V(BR) (Volts) (1) Min. 6.45 7.13 7.79 8.65 9.50 10.5 11.4 12.4 14.3 15.2 17.1 19.0 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95.0 105 114 124 143 152 162 171 190 209 237 285 332 380 418 456 485 503.5 513 522.5 Max. 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 15.8 16.8 18.9 21.0 23.1 25.2 28.4 31.5 34.7 37.8 41.0 45.2 49.4 53.6 58.8 65.1 71.4 78.8 86.1 95.5 105 116 126 137 158 168 179 189 210 231 263 315 368 420 462 504 535 556.5 567 577.5 Test current at IT (mA) 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off voltage VWM (Volts) 5.80 6.40 7.02 7.78 8.55 9.40 10.2 11.1 12.8 13.6 15.3 17.1 18.8 20.5 23.1 25.6 28.2 30.8 33.3 36.8 40.2 43.6 47.8 53.0 58.1 64.1 70.1 77.8 85.5 94.0 102 111 128 136 145 154 171 185 214 256 300 342 376 408 434 477 459 495 Maximum reverse leakage at VWM ID(3) (uA) 1000 500 200 50 10 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum peak pulse current IPPM(2) (A) 38.1 35.4 33.1 29.9 27.6 25.6 24.0 22.0 18.9 17.8 15.9 14.4 13.1 12.0 10.7 9.7 8.8 8.0 7.4 6.7 6.2 5.7 5.2 4.7 4.3 3.9 3.5 3.2 2.2 2.0 1.8 1.7 1.4 1.4 1.3 1.2 1.1 0.9 1.2 1.0 0.9 0.8 0.7 0.6 0.6 0.6 0.5 0.5 Maximum clamping voltage at IPPM VC (Volts) 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77.0 85.0 92.0 104 113 125 137 152 165 179 207 219 234 246 274 328 344 414 482 548 602 658 698 725 740 760 Maximum temperature coefficient of V(BR) (% / oC) 0.057 0.061 0.065 0.068 0.073 0.075 0.078 0.081 0.084 0.086 0.088 0.090 0.092 0.094 0.096 0.097 0.098 0.099 0.100 0.101 0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.107 0.106 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 Notes: 1. V(BR) measured after IT applied for 300us, IT=square wave pulse or equivalent 2. Surge current waveform per Fig. 3 and derate per Fig. 2 3. All terms and symbols are consistent with ANSI/IEEE CA62.35 4. For bidirectional types with VR 10 Volts and less, the ID limit is doubled 04/13/2007 Rev.1.00 www.SiliconStandard.com 3 P4SMAX RATINGS AND CHARACTERISTIC CURVES o (TA=25 C unless otherwise noted) Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 04/13/2007 Rev.1.00 www.SiliconStandard.com 4