RB551V-30

RB551V-30 SOD-323 Plastic-Encapsulate Diode PRODUCT SUMMARY RB551V-30 Schottky Diodes SOD-323 FEATURES High current rectifier Schottky diode Low voltage, low inductance For power supply + MARKING: D Pb-free; RoHS-compliant MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Single Diode @ TA = 25oC Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 30 20 0.5 2 125 -40~+125 Unit V V A A ℃ ℃ ELECTRICAL RATINGS @ TA = 25oC Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.36 0.47 100 Unit V µA Conditions IF=100mA IF=500mA VR=20V 02/09/2007 Rev.1.00 www.SiliconStandard.com 1 RB551V-30 SOD-323 Plastic-Encapsulate Diode TYPICAL CHARACTERISTICS Electrical Characteristic curves (Ta = 25 C) o Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 02/09/2007 Rev.1.00 www.SiliconStandard.com 2