SMAJ9.0A

SMAJ Series Transient Voltage Suppressors PRODUCT SUMMARY Stand-off Voltage ratings from 5.0V to 440V Peak pulse power 400W in SMA surface-mount package FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Optimized for LAN protection applications Ideal for ESD protection of data lines in accordance with IEC 1000-4-2 (IEC801-2) Ideal for EFT protection of data lines in accordance with IEC 1000-4-4 (IEC801-4) Low profile package with built-in strain relief for surface-mount Glass passivated junction Low incremental surge resistance, excellent clamping capability Peak pulse power capability of 400W with a 10/1000us waveform, repetition rate (duty cycle): 0.01% (300W above 78V) Very fast response time High temperature soldering guaranteed: 260°C for 10 seconds at terminals MECHANICAL DATA Case: JEDEC DO-214AC (SMA) molded plastic over passivated chip Terminals: Matte-Sn plated, solderable per MIL-STD-750, Method 2026 Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation. Mounting position: Any Weight: 0.002oz., 0.064g Pb-free; RoHS-compliant Devices for Bidirectional Applications For bi-directional devices, use suffix CA (e.g. SMAJ10CA). Electrical characteristics apply in both directions. MAXIMUM RATINGS Rating at 25°C ambient temperature unless otherwise specified. Parameter Peak pulse power dissipation with a 10/1000us waveform (1,2) (see Fig. 1) Peak pulse current with a 10/1000us waveform (1) Symbol P PPM IPPM IFSM RθJA RθJL TJ, TSTG Value 400 See Next Table 40 120 30 -55 to +150 Unit W A A o Peak forward surge current, 8.3ms single half sine-wave uni-directional only (2) Typical thermal resistance, junction to ambient Typical thermal resistance, junction to lead Operating junction and storage temperature range (3) C/W C/W o o C Notes: 1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2. Rating is 300W above 78V 2. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal 3. Mounted on minimum recommended pad layout 9/21/2006 Rev.4.01 www.SiliconStandard.com 1 of 4 SMAJ Series ELECTRICAL PARAMETERS At 25°C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only) Device marking co d e Device type SMAJ5.0 SMAJ5.0A SMAJ6.0 SMAJ6.0A SMAJ6.5 SMAJ6.5A SMAJ7.0 SMAJ7.0A SMAJ7.5 SMAJ7.5A SMAJ8.0 SMAJ8.0A SMAJ8.5 SMAJ8.5A SMAJ9.0 SMAJ9.0A SMAJ10 SMAJ10A SMAJ11 SMAJ11A SMAJ12 SMAJ12A SMAJ13 SMAJ13A SMAJ14 SMAJ14A SMAJ15 SMAJ15A SMAJ16 SMAJ16A SMAJ17 SMAJ17A SMAJ18 SMAJ18A SMAJ20 SMAJ20A SMAJ22 SMAJ22A SMAJ24 SMAJ24A SMAJ26 SMAJ26A SMAJ28 SMAJ28A SMAJ30 SMAJ30A (5) Breakdow n voltage V(BR) (Volts) (1) Min. 6.40 6.40 6.67 6.67 7.22 7.22 7.78 7.78 8.33 8.33 8.89 8.89 9.44 9.44 10.0 10.0 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 33.3 33.3 Max. 7.82 7.07 8.15 7.37 8.82 7.98 9.51 8.60 10.2 9.21 10.9 9.83 11.5 10.4 12.2 11.1 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 38.0 34.4 40.7 36.8 UNI AD AE AF AG AH AK AL AM AN AP AQ AR AS AT AU AV AW AX AY AZ BD BE BF BG BH BK BL BM BN BP BQ BR BS BT BU BV BW BX BY BZ CD CE CF CG CH CK BI WD WE WF WG WH WK WL WM WN WP WQ WR WS WT WU WV WW WX WY WZ XD XE XF XG XH XK XL XM XN XP XQ XR XS XT XU XV XW XX XY XZ YD YE YF YG YH YK Test current at IT (mA) 10 10 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off voltage VWM (Volts) 5.0 5.0 6.0 6.0 6.5 6.5 7.0 7.0 7.5 7.5 8.0 8.0 8.5 8.5 9.0 9.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 26 26 28 28 30 30 Maximum reverse leakage at VWM ID(3) (uA) 800 800 800 800 500 500 200 200 100 100 50 50 10 10 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum peak pulse surge current IPPM(2) (A) 41.7 43.5 35.1 38.8 32.5 35.7 30.1 33.3 28.0 31.0 26.7 29.4 25.2 27.8 23.7 26.0 21.3 23.5 19.9 22.0 18.2 20.1 16.8 18.6 15.5 17.2 14.9 16.4 13.9 15.4 13.1 14.5 12.4 13.7 11.2 12.3 10.2 11.3 9.3 10.3 8.6 9.5 8.0 8.8 7.5 8.3 Maximum clamping voltage at IPPM VC (Volts) 9.6 9.2 11.4 10.3 12.3 11.2 13.3 12.0 14.3 12.9 15.0 13.6 15.9 14.4 16.9 15.4 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.0 45.4 53.5 48.4 Notes: 1. V(BR) measured after IT applied for 300us square wave pulse or equivalent 2. Surge current waveform per Fig. 3 and derate per Fig. 2 3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled 4. All terms and symbols are consistent with ANSI/IEEE C62.35 5. For the bidirectional SMAJ5.0CA, the maximum V(BR) is 7.25V. 9/21/2006 Rev.4.01 www.SiliconStandard.com 2 of 4 SMAJ Series ELECTRICAL PARAMETERS At 25°C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only) Device marking co d e Device type SMAJ33 SMAJ33A SMAJ36 SMAJ36A SMAJ40 SMAJ40A SMAJ43 SMAJ43A SMAJ45 SMAJ45A SMAJ48 SMAJ48A SMAJ51 SMAJ51A SMAJ54 SMAJ54A SMAJ58 SMAJ58A SMAJ60 SMAJ60A SMAJ64 SMAJ64A SMAJ70 SMAJ70A SMAJ75 SMAJ75A SMAJ78 SMAJ78A SMAJ85 SMAJ85A SMAJ90 SMAJ90A SMAJ100 SMAJ100A SMAJ110 SMAJ110A SMAJ120 SMAJ120A SMAJ130 SMAJ130A SMAJ150 SMAJ150A SMAJ160 SMAJ160A SMAJ170 SMAJ170A SMAJ180A SMAJ200A SMAJ220A SMAJ250A SMAJ300A SMAJ350A SMAJ400A SMAJ440A UNI CL CM CN CP CQ CR CS CT CU CV CW CX CY CZ RD RE RF RG RH RK RL RM RN RP RQ RR RS RT RU RV RW RX RY RZ SD SE SF SG SH SK SL SM SN SP SQ SR ST SV SX SZ TE TG TK TM BI YL YM YN YP YQ YR YS YT YU YV YW YX YY YZ ZD ZE ZF ZG ZH ZK ZL ZM ZN ZP ZQ ZR ZS ZT ZU ZV ZW ZX ZY ZZ VD VE VF VG VH VK VL VM VN VP VQ VR VT VV VX VZ UE UG UK UM Breakdow n voltage V(BR) (Volts) (1) Min. 36.7 36.7 40.0 40.0 44.4 44.4 47.8 47.8 50.0 50.0 53.3 53.3 56.7 56.7 60.0 60.0 64.4 64.4 66.7 66.7 71.1 71.1 77.8 77.8 83.3 83.3 86.7 86.7 94.4 94.4 100 100 111 111 122 122 133 133 144 144 167 167 178 178 189 189 201 224 246 279 335 391 447 492 Max. 44.9 40.6 48.9 44.2 54.3 49.1 58.4 52.8 61.1 55.3 65.1 58.9 69.3 62.7 73.3 66.3 78.7 71.2 81.5 73.7 86.9 78.6 95.1 86.0 102 92.1 106 95.8 115 104 122 111 136 123 149 135 163 147 176 159 204 185 218 197 231 209 222 247 272 309 371 432 494 543 Test current at IT (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off voltage VWM (Volts) 33 33 36 36 40 40 43 43 45 45 48 48 51 51 54 54 58 58 60 60 64 64 70 70 75 75 78 78 85 85 90 90 100 100 110 110 120 120 130 130 150 150 160 160 170 170 180 200 220 250 300 350 400 440 Maximum reverse leakage at VWM ID(3) (uA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum peak pulse surge current IPPM(2) (A) 6.8 7.5 6.2 6.9 5.6 6.2 5.2 5.8 5.0 5.5 4.7 5.2 4.4 4.9 4.2 4.6 3.9 4.3 3.7 4.1 3.5 3.9 3.2 3.5 3.0 3.3 2.9 3.2 2.0 2.2 1.9 2.1 1.7 1.9 1.5 1.7 1.4 1.6 1.3 1.4 1.1 1.2 1.0 1.2 0.99 1.09 1.4 1.2 1.1 1.0 0.8 0.7 0.6 0.6 Maximum clamping voltage at IPPM VC (Volts) 59.0 53.3 64.3 58.1 71.4 64.5 76.7 69.4 80.3 72.7 85.5 77.4 91.1 82.4 96.3 87.1 103 93.6 107 96.8 114 103 125 113 134 121 139 126 151 137 160 146 179 162 196 177 214 193 231 209 268 243 287 259 304 275 292 324 356 405 486 567 648 713 Notes: 1. V(BR) measured after IT applied for 300us square wave pulse or equivalent 2. Surge current waveform per Fig. 3 and derate per Fig. 2 3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled 4. All terms and symbols are consistent with ANSI/IEEE C62.35 5. For parts without A, the VBR is +10% 9/21/2006 Rev.4.01 www.SiliconStandard.com 3 of 4 SMAJ Series RATINGS AND CHARACTERISTIC CURVES Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 9/21/2006 Rev.4.01 www.SiliconStandard.com 4 of 4