SMBJ43A

厂商：
SSC
封装：
描述：
SMBJ43A - Transient Voltage Suppressors - Silicon Standard Corp.

数据手册：

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数据手册
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SMBJ43A 数据手册

SMBJ Series Transient Voltage Suppressors PRODUCT SUMMARY Stand-off Voltage ratings from 5.0V to 440V Peak pulse power 600W in SMB surface-mount package FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Low profile package with built-in strain relief for surface-mount Glass passivated junction Low incremental surge resistance, excellent clamping capability Peak pulse power capability of 600W with a 10/1000us waveform, repetition rate (duty cycle): 0.01% Very fast response time High temperature soldering guaranteed: 260°C for 10 seconds at terminals MECHANICAL DATA Case: JEDEC DO-214AA (SMB) molded plastic over passivated chip Terminals: Matte-Sn plated, solderable per MIL-STD-750, Method 2026 Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation. Mounting position: Any Weight: 0.003oz., 0.093g Pb-free; RoHS-compliant Devices for Bidirectional Applications For bi-directional devices, use suffix CA (e.g. SMBJ10CA). Electrical characteristics apply in both directions. MAXIMUM RATINGS Rating at 25°C ambient temperature unless otherwise specified. Parameter Peak pulse power dissipation with a 10/1000us waveform (1,2) (see Fig. 1) Peak pulse current with a 10/1000us waveform (1) Symbol P PPM IPPM IFSM RθJA RθJL TJ, TSTG Value Minimum 600 See Next Table 100 100 20 -55 to +150 Unit W A A °C/W °C/W °C Peak forward surge current, 8.3ms single half sine-wave uni-directional only (2) Typical thermal resistance, junction to ambient Typical thermal resistance, junction to lead Operating junction and storage temperature range (3) Notes: 1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2. 2. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal 3. Mounted on minimum recommended pad layout 9/21/2006 Rev.4.01 www.SiliconStandard.com 1 of 4 SMBJ Series ELECTRICAL PARAMETERS At 25°C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only) Device marking co d e Device Type SMBJ5.0 SMBJ5.0A SMBJ6.0 SMBJ6.0A SMBJ6.5 SMBJ6.5A SMBJ7.0 SMBJ7.0A SMBJ7.5 SMBJ7.5A SMBJ8.0 SMBJ8.0A SMBJ8.5 SMBJ8.5A SMBJ9.0 SMBJ9.0A SMBJ10 SMBJ10A SMBJ11 SMBJ11A SMBJ12 SMBJ12A SMBJ13 SMBJ13A SMBJ14 SMBJ14A SMBJ15 SMBJ15A SMBJ16 SMBJ16A SMBJ17 SMBJ17A SMBJ18 SMBJ18A SMBJ20 SMBJ20A SMBJ22 SMBJ22A SMBJ24 SMBJ24A SMBJ26 SMBJ26A SMBJ28 SMBJ28A SMBJ30 SMBJ30A (5) Breakdow n voltage V(BR) (Volts) (1) Min. 6.40 6.40 6.67 6.67 7.22 7.22 7.78 7.78 8.33 8.33 8.89 8.89 9.44 9.44 10.0 10.0 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 33.3 33.3 Max. 7.82 7.07 8.15 7.37 8.82 7.98 9.51 8.60 10.2 9.21 10.9 9.83 11.5 10.4 12.2 11.1 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 38.0 34.4 40.7 36.8 UNI KD KE KF KG KH KK KL KM KN KP KQ KR KS KT KU KV KW KX KY KZ LD LE LF LG LH LK LL LM LN LP LQ LR LS LT LU LV LW LX LY LZ MD ME MF MG MH MK BI AD AE AF AG AH AK AL AM AN AP AQ AR AS AT AU AV AW AX AY AZ BD BE BF BG BH BK BL BM BN BP BQ BR BS BT BU BV BW BX BY BZ CD CE CF CG CH CK Test current at IT (mA) 10 10 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off voltage VWM (Volts) 5.0 5.0 6.0 6.0 6.5 6.5 7.0 7.0 7.5 7.5 8.0 8.0 8.5 8.5 9.0 9.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 26 26 28 28 30 30 Maximum reverse leakage at VWM ID(3) (uA) 800 800 800 800 500 500 200 200 100 100 50 50 20 20 10 10 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum peak pulse surge current IPPM(2) (A) 62.5 65.2 52.6 58.3 48.8 53.6 45.1 50.0 42.0 46.5 40.0 44.1 37.7 41.7 35.5 39.0 31.9 35.3 29.9 33.0 27.3 30.2 25.2 27.9 23.3 25.9 22.3 24.6 20.8 23.1 19.7 21.7 18.6 20.5 16.8 18.5 15.2 16.9 14.0 15.4 12.9 14.3 12.0 13.2 11.2 12.4 Maximum clamping voltage at IPPM VC (Volts) 9.6 9.2 11.4 10.3 12.3 11.2 13.3 12.0 14.3 12.9 15.0 13.6 15.9 14.4 16.9 15.4 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.0 45.4 53.5 48.4 Notes: 1. V(BR) measured after IT applied for 300us square wave pulse or equivalent 2. Surge current waveform per Fig. 3 and derate per Fig. 2 3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled 4. All terms and symbols are consistent with ANSI/IEEE C62.35 5. For the bidirectional SMBJ5.0CA, the maximum V(BR) is 7.25V. 9/21/2006 Rev.4.01 www.SiliconStandard.com 2 of 4 SMBJ Series ELECTRICAL PARAMETERS At 25°C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only) Breakdow n voltage V(BR) (Volts) (1) Min. 36.7 36.7 40.0 40.0 44.4 44.4 47.8 47.8 50.0 50.0 53.3 53.3 56.7 56.7 60.0 60.0 64.4 64.4 66.7 66.7 71.1 71.1 77.8 77.8 83.3 83.3 86.7 86.7 94.4 94.4 100 100 111 111 122 122 133 133 144 144 167 167 178 178 189 189 201 224 246 279 335 391 447 492 Max. 44.9 40.6 48.9 44.2 54.3 49.1 58.4 52.8 61.1 55.3 65.1 58.9 69.3 62.7 73.3 66.3 78.7 71.2 81.5 73.7 86.9 78.6 95.1 86.0 102 92.1 106 95.8 115 104 122 111 136 123 149 135 163 147 176 159 204 185 218 197 231 209 222 247 272 309 371 432 494 543 Maximum reverse leakage at VWM ID(3) (uA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum peak pulse surge current IPPM(2) (A) 10.2 11.3 9.3 10.3 8.4 9.3 7.8 8.6 7.5 8.3 7.0 7.8 6.6 7.3 6.2 6.9 5.8 6.4 5.6 6.2 5.3 5.8 4.8 5.3 4.5 5.0 4.3 4.8 4.0 4.4 3.8 4.1 3.4 3.7 3.1 3.4 2.8 3.1 2.6 2.9 2.2 2.5 2.1 2.3 2.0 2.2 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.9 Maximum clamping voltage at IPPM VC (Volts) 59.0 53.3 64.3 58.1 71.4 64.5 76.7 69.4 80.3 72.7 85.5 77.4 91.1 82.4 96.3 87.1 103 93.6 107 96.8 114 103 125 113 134 121 139 126 151 137 160 146 179 162 196 177 214 193 231 209 268 243 287 259 304 275 292 324 356 405 486 567 648 713 Device marking co d e Device type SMBJ33 SMBJ33A SMBJ36 SMBJ36A SMBJ40 SMBJ40A SMBJ43 SMBJ43A SMBJ45 SMBJ45A SMBJ48 SMBJ48A SMBJ51 SMBJ51A SMBJ54 SMBJ54A SMBJ58 SMBJ58A SMBJ60 SMBJ60A SMBJ64 SMBJ64A SMBJ70 SMBJ70A SMBJ75 SMBJ75A SMBJ78 SMBJ78A SMBJ85 SMBJ85A SMBJ90 SMBJ90A SMBJ100 SMBJ100A SMBJ110 SMBJ110A SMBJ120 SMBJ120A SMBJ130 SMBJ130A SMBJ150 SMBJ150A SMBJ160 SMBJ160A SMBJ170 SMBJ170A SMBJ180A SMBJ200A SMBJ220A SMBJ250A SMBJ300A SMBJ350A SMBJ400A SMBJ440A UNI ML MM MN MP MQ MR MS MT MU MV MW MX MY MZ ND NE NF NG NH NK NL NM NN NP NQ NR NS NT NU NV NW NX NY NZ PD PE PF PG PH PK PL PM PN PP PQ PR PT PV PX PZ QE QG QK QM BI CL CM CN CP CQ CR CS CT CU CV CW CX CY CZ DD DE DF DG DH DK DL DM DN DP DQ DR DS DT DU DV DW DX DY DZ FD FE FF FG FH FK FL FM FN FP FQ FR FT FV FX FZ GE GG GK GM Test current at IT (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off voltage VWM (Volts) 33 33 36 36 40 40 43 43 45 45 48 48 51 51 54 54 58 58 60 60 64 64 70 70 75 75 78 78 85 85 90 90 100 100 110 110 120 120 130 130 150 150 160 160 170 170 180 200 220 250 300 350 400 440 Notes: 1. V(BR) measured after IT applied for 300us square wave pulse or equivalent 2. Surge current waveform per Fig. 3 and derate per Fig. 2 3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled 4. All terms and symbols are consistent with ANSI/IEEE C62.35 5. For parts without A, the VBR is +10% 9/21/2006 Rev.4.01 www.SiliconStandard.com 3 of 4 SMBJ Series RATINGS AND CHARACTERISTIC CURVES Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 9/21/2006 Rev.4.01 www.SiliconStandard.com 4 of 4

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SMBJ43A

物料型号： - SMBJ系列提供多种型号，如SMBJ5.0、SMBJ6.0、SMBJ7.0等，直到SMBJ440A。

器件简介： - SMBJ系列为瞬态电压抑制器，提供从5.0V到440V的独立电压等级。 - 峰值脉冲功率600W，SMB表面贴装封装。

引脚分配： - JEDEC DO-214AA (SMB)塑封芯片，终端为MATTE-SN镀层，符合MIL-STD-750方法2026的可焊性。 - 对于单向类型，带环端表示阴极，相对于阳极在正常TVS操作中为正。

参数特性： - 工作温度范围：-55至+150摄氏度。 - 典型热阻：结到环境100°C/W，结到引线20°C/W。 - 峰值脉冲功率：600W，10/1000us波形，重复率（占空比）0.01%。

功能详解： - 低轮廓封装，内置用于表面贴装的应变缓解。 - 玻璃钝化结，低增量浪涌电阻，优秀的钳位能力。 - 响应时间非常快，保证了260°C下10秒的高温焊接。

应用信息： - 用于单向和双向应用的瞬态电压抑制。 - 双向应用时，使用后缀CA（例如SMBJ10CA）。

封装信息： - 封装类型为DO-214AA(SMB)，符合JEDEC标准。 - 无铅，符合RoHS标准。

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