SS115L

SS12L thru SS115L Schottky Barrier Rectifiers PRODUCT SUMMARY 1.0 Amp. Surface Mount FEATURES For surface mounted application Low-Profile Package Ideal for automated pick & place Low power loss, high efficiency
High current capability, low VF
High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0
Epitaxial construction o High temperature soldering: 260 C / 10 seconds at terminals Sub SMA MECHANICAL DATA Cases: Sub SMA plastic case
Terminal : Pure tin plated, lead free.
Polarity: Color band denotes cathode end Packaging: 12mm tape per EIA STD RS-481 Weight approx. 15mg Dimensions in inches and (millimeters) Pb-free; RoHS-compliant 08/22/2007 Rev.1.00 www.SiliconStandard.com 1 SS12L thru SS115L MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, de-rate current by 20% Symbol SS 12L Maxim um Recurrent Peak Reverse Voltage V 20 RRM Maxim um RMS Voltage 14 VRMS Maxim um DC Blocking Voltage 20 VDC o Type Number SS 13L 30 21 30 SS 14L 40 28 40 SS 15L 50 35 50 SS 16L 60 42 60 SS SS SS Units 19L 110L 115L 90 100 150 V 63 70 105 V 90 100 150 V A A 0.65 0.80 0.75 0.90 Marking Code (Note 2) Maxim um Average Forward Rectified Current Peak Forward S urge Current, 8.3 m s Single Half Sine-wave S uperimposed on Rated Load (JEDEC method ) Maxim um Instantaneous Forward Voltage (Note 1) @ 0.5A @ 1.0A Maxim um DC Reverse Current @ TA =25 oC at Rated DC B locking Voltage @ TA=100 oC Maxim um Thermal Resistance (Note 3) 1 2LYM 1 3LYM 1 4LYM 15LYM 1 6LYM 19LYM 10LYM A5LY M I(AV) IFSM VF IR 0.385 0.43 0.45 0.50 0.51 0.55 1.0 30 0.58 0.70 V mA mA o 8. 0 0.4 6.0 0.05 0. 5 RθJA 100 45 RθJL Operating Temperature Range TJ -55 to +150 Storage Temperature Range TSTG -55 to + 150 Notes: 1. Pulse Test with PW =300 usec, 1% Duty Cycle. 2. 12LYM: 1-1A, 2-20V, L-Low Profile, Y-Year Code, M-Month Code. 3. Measured on P.C.Board with 0.2” x 0.2” (5.0mm x 5.0mm) Copper Pad Areas. C/W o o C C 08/22/2007 Rev.1.00 www.SiliconStandard.com 2 SS12L thru SS115L RATINGS AND CHARACTERISTIC CURVES FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1.2 100 FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 50 1.0 0.8 20 10 5 0.6 0.4 0.2 2 8.3ms Single Half Sine Wave Tj=Tj max 1 2 5 10 20 NUMBER OF CYCLES AT 60Hz 50 100 0 0 20 40 60 80 100 o 120 140 160 1 LEAD TEMPERATURE. ( C) FIG.3- TYPICAL FORWARD CHARACTERISTICS 100 50 SS15L-SS16L 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 SS19L-SS110L SS13L-SS14L 10,000 FIG.4- TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT. ( A) INSTANTANEOUS FORWARD CURRENT. (A) 1,000 T J = 10 0C O SS12L T J = 75 O C 100 SS115L 10 TJ = O 25 C 1 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 140 FORWARD VOLTAGE. (V) FIG.5- TYPICAL JUNCTION CAPACITANCE 100 FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 100 50 JUNCTION CAPACITANCE. (pF) Tj=25 C f=1.0MHz Vsig=50mVp-p 20 TRANSIENT THERMAL IMPEDANCE. (OC/W) 1000 O 10 10 5 1 2 1 0.1 1.0 10 REVERSE VOLTAGE. (V) 100 0.1 0.01 0.1 1 10 T, PULSE DURATION. (sec) 100 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 08/22/2007 Rev.1.00 www.SiliconStandard.com 3