SS6563-CSTR

SS6563 Versatile DC/DC Converter FEATURES Operates from 3V to 30V input voltage Internal 2A peak current switch. Continuous output current of 1.5A Bootstrapped driver. High-side current sense capability. High efficiency (up to 90%). Internal ±2% reference. Low quiescent current at 1.6mA. Operating frequency from 100Hz to 100KHz. DESCRIPTION The SS6563 is a monolithic control circuit that provides the primary functions required for DC to DC converters and high-side-sensed constant current sources. The device consists of an internal temperature compensated reference, comparator, controlled duty-cycle oscillator with an active current-sense circuit, bootstrapped driver, and high-current output switch. This device is specifically designed to construct a constant current source for battery chargers with a minimum number of external components. A bootstrapped driver can drive the NPN output switch to saturation for higher efficiency and less heat dissipation. The SS6563 can deliver 1.5A continuous current without requiring a heat sink. APPLICATIONS Constant Current Source for Battery Chargers. Saver for Cellular phones. Step-Down DC/DC Converter Module. TYPICAL APPLICATION CIRCUIT D3 R1 470 D2 1N4148 C3 1N4148 L1 300µH D1 1N5819 R2 390K C2 1000pF RB RA 1K 3K + C4 470µF 5V/1A When VIN>15V make R1=1K + 1µF 8 1 2 3 4 BOOST IS DC DE CF GND VIN 8V~25V + RS 0.22 7 6 VCC C1 100µF 5 FB SS6563 R3 2.2M Line Regulation Load Regulation Short Circuit Current VIN = 10V~20V @ IO=1A VIN = 15V, @ IO=100mA~1A VIN =15V, @ RL = 0.1Ω Step-Down Converter 40mV 20mV 1.3A Rev.2.02 4/06/2004 www.SiliconStandard.com 1 of 10 SS6563 ORDERING INFORMATION SS6563-CXXX Packing TR: Tape and reel TB: Tubes DC PIN CONFIGURATION PDIP-8, SO-8 TOP VIEW 1 2 3 4 8 7 6 5 BOOST IS VCC FB Package type DE N: PDIP-8 (only available in tubes) CF S: SO-8 GND Example: SS6563CSTR à in SO-8 package shipped in tape and reel ABSOLUTE MAXIMUM RATINGS Supply Voltage ..............................................................……………............................. 30V Comparator Input Voltage Range ............................................………….......... -0.3V~30V Switch Collector Voltage ....................................................……………......................... 30V Switch Emitter Voltage ......................................................……………......................... 30V Switch Collector to Emitter Voltage ..................................…………............................. 30V Driver Collector Voltage ....................................................…………….......................... 30V Switch Current ................................................………………......................................... 2A Power Dissipation and Thermal Characteristics DIP Package Ta= 25°C ............................…………................................ 1.0W Thermal Resistance .............…………......................... 100°C/W SO Package Ta= 25°C......................……………............................... 625mW Thermal Resistance ...................………...................... 160°C/W Operating Junction Temperature .....................................................………............. 125°C Operating Ambient Temperature Range .......................……………......................... 0~70°C Storage Temperature Range ...................................………….................... - 65°C ~ 150°C Rev.2.02 4/06/2004 www.SiliconStandard.com 2 of 10 SS6563 TEST CIRCUIT R1 VCC 1K 50mA Current Source 1A Current Source 4.55V @VCC=5V 1 2 DE 3 2V/0V IDISCHG/ ICHG 4 GND CF DC BOOST 8 IS VCC FB 7 6 VCC 5 1.275V 1.225V 4.75V SS6563 CT 1nF ELECTRICAL CHARACTERISTICS PARAMETER Oscillator Charging Current Discharge Current Voltage Swing Discharge to Charge Current Ratio 5.0V≤VCC≤30V 5.0V≤VCC≤30V PIN 3 VIS =VCC (VCC= 5V, T A=25° C, unless otherwise specified.) TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT ICHG IDISCHG VOSC IDISCHG / ICHG 10 100 25 150 0.6 6.0 40 200 µA µA V Current Limit Sense Voltage ICHG=IDISCHG Output Switch Saturation Voltage, Emitter Follower Connection Saturation Voltage DC Current Gain Collector Off-State Current IDE=1.0A; VBOOST =VDC = VCC IDC=1.0A; IBOOST =50mA, (Forced β≅20) ISC =1.0A; VCE=5.0V VCE=30V VCC – VIS 250 300 350 mV VCE(SAT) 1.5 1.8 V VCE (SAT) hFE IC(OFF) 35 0.4 120 10 0.7 V nA Rev.2.02 4/06/2004 www.SiliconStandard.com 3 of 10 SS6563 ELECTRICAL CHARACTERISTICS PARAMETER Comparator Threshold Voltage TA=25°C 0°C ≤ TA ≤ 70°C Threshold Voltage Line Regulation Input Bias Current 3.0V≤VCC≤30V VIN=0V VIS =VCC, pin 5>VFB 5.0V≤ VCC ≤30V CT=1nF PIN 2=GND Remaining pins open VFB 1.225 1.21 1.25 1.275 1.29 0.3 1 V V mV/V µA (VCC= 5V, TA=25°C, unless otherwise specified.) TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT REGLINE IIB 0.1 0.4 Supply Current ICC 1.6 3 mA TYPICAL PERFORMANCE CHARACTERISTICS tON-OFF, Output Switch ON-OFF Time (µS) 2 ICC, Supply Current (mA) VCC=5V VIS =VCC PIN 5=GND ON -TIME 1000 1.6 1.2 CT = 1nF VIS = VCC PIN 2 =GND 100 0.8 10 OFF-TIME 0.4 1 0.1 1 10 100 0 CT, Oscillator Timing Capacitor (nF) Fig. 1 Output Switch ON-OFF Time vs. Oscillator Timing Capacitor 0 5 10 15 20 25 30 VCC, Supply Voltage (V) Fig. 2 Standby Supply Current vs. Supply Voltage Rev.2.02 4/06/2004 www.SiliconStandard.com 4 of 10 SS6563 TYPICAL PERFORMANCE CHARACTERISTICS 1.3 (Continued) 350 VCC-VIS Threshold Voltage ( mV) 1.28 VFB, Threshold Voltage (V) VCC = 5V, CT = 1nF, PIN 2 = GND 340 330 320 310 300 290 280 270 260 250 0 VCC = 5V, CT = 1nF, PIN 2 = GND 1.26 1.24 1.22 1.2 0 10 20 Temperature (°C) 30 40 50 60 70 80 10 20 30 40 50 60 70 80 Fig. 3 VFB, Threshold Voltage vs. Temperature Fig. 4 Temperature (°C) IS Threshold Voltage vs. Temperature 1.8 0.8 VCE(SAT), Saturation Voltage (V) 1.7 VCC = 5V PIN 1, 7, 8 = VCC PIN 3, 5 = GND VCE(SAT), Saturation Voltage (V) 0.6 VCC = 5V PIN 7 = VCC PIN 2, 3, 5 = GND 1.6 1.5 1.4 0.4 0.2 Forced Beta = 20 1.3 1.2 0 0.5 1 1.5 0 0 0.5 1 1.5 IE, Emitter Current (A) Fig. 5 Emitter Follower Configuration Output Switch Saturation Voltage vs. Emitter Current IC, Collector Current (A) Fig. 6 Common Emitter Configuration Output Switch Saturation Voltage vs. Collector Current BLOCK DIAGRAM DC 1 Q2 Q1 80 DE 2 7 QS R 8 BOOST IS Is CT Oscillator CF 3 Comparator 1.25V Reference Voltage GND 4 + 6 VCC 5 FB Rev.2.02 4/06/2004 www.SiliconStandard.com 5 of 10 SS6563 PIN DESCRIPTIONS PIN 1: DC PIN 2: DE PIN 3: CF - The collector of the switch - 2A. - Darlington switch emitter. - Oscillator timing capacitor. PIN 5: FB - Feedback comparator inverting input. PIN 6: VCC - Power supply input. PIN 7: IS - Highside current sense input. VCC - VIS=300mV. PIN 4: GND - Power ground. PIN 8: BOOST - Bootstrapped driver collector. APPLICATION INFORMATION DESIGN FORMULA TABLE CALCULATION t ON t OFF STEP-DOWN VOUT + VF VIN(MIN) - VSAT - VOUT 1 FMIN STEP-UP VOUT + VF - VIN(MIN) VIN(MIN) - VSAT 1 FMIN (tON + tOFF) MAX CT IC (SWITCH) RS L(MIN) Co ( 4x10 tON 2IOUT(MAX) 0.3/IC(SWITCH) VIN(MIN) - VSAT - VOUT )tON(MAX) IC(SWITCH) IC( SWITCH) ( t ON + t OFF) 8V RIPPLE( P - P ) ( -5 4 x 10 tON 2IOUT(MAX) ( t ON + t OFF ) t OFF -5 0.3/ IC (SWITCH) VIN(MIN) - VSAT )tON(MAX) IC(SWITCH) IOUT tON VRIPPLE(P - P) VSAT = Saturation voltage of the output switch. VF = Forward voltage of the ringback rectifier The following power supply characteristics must be chosen: VIN VOUT IOUT FMIN - Minimum desired switching frequency at selected values for VIN and IOUT . - Nominal input voltage. - Desired output voltage, VOUT = 1.25 (1 + RB/RA) VRIPPLE (P-P) - Desired peak-to-peak output ripple voltage. In practice, the calculated value will need to be increased due to the capacitor equivalent series resistance and board layout. The ripple voltage should be kept to a low value since it will directly affect the line and load regulation. - Desired output current. Rev.2.02 4/06/2004 www.SiliconStandard.com 6 of 10 SS6563 APPLICATION EXAMPLES D1 R1 1K IN4148 C2 1µ F R5 120/0.5W U1 R4 390K 1 2 3 C1 470P SS6563 4 DC DE CF GND 8 BOOST 7 IS 6 VCC 5 FB + C3 D3 IN4148 RS 0.3/1W BAT1 **BATTERY RX THERMISTOR R3 R2 L1 220µH + C5 C4 220µ F D2 IN5819 20/5W LED1 R8 300K + R9 91K 5 VCC 6 R14 + C6 0.1 µF C11 200K C8 R6 50K R11 100K 7 8 ADJ SEL3 TMR C9 4.7µF C7 0.1 µF R10 100K YELLOW 1 PEAK 2 C10 47nF Q1 MPS2222A SW1 LED2 PB SW R12 100K DSW ICON LED2 LED1 GND SEL1 SEL2 MODE 16 15 14 13 12 11 10 9 R16 680 R17 680 GREEN RED LED3 270 U2 0.1µ F R15 680 VBT 3 DIS 4 VTS D4 1N5819 R7 220µ F RY 100 µF R13 470K 0.1µF SS6781 VIN 11~15V + U3 78L05 VOUT + VIN C12 1µF Q2 MMBT2222A C13 10µF GND **3~5 NiMH/NiCd cells. Note: Charge Current=0.3/RS Ampere Safety Timer: 80min Fig. 1 Battery Charger Circuit for Fluctuating Charging Current Applications R1 1K D2 1N4148 R2 120 C3 1µ F 220µH L D1 1N5821 D3 1N5819 (%) *RS 100 IO V IN = 16V, V O= 12V + + CO C5 10µF 90 220µF DC DE CF BOOST IS VCC FB RA 5.6K RB VIN + 220µF C1 V IN= 16V, V O= 8V 80 470pF CT GND 33K 70 0 *IO=300mV/RS SS6563 0 .5 1 1 .5 2 I o (A ) Efficiency vs Output Current Fig. 2 Battery Charge Circuit Rev.2.02 4/06/2004 www.SiliconStandard.com 7 of 10 SS6563 APPLICATION EXAMPLES (Continued) D1 5V 1N5819 + C3 1µF 8 BOOST 1 2 3 4 C2 470pF SS6563 L1 300µH D1 1N5819 + 12V/1A C4 470µF DC DE CF GND VIN 16V~25V + RS 0.22 7 IS 6 VCC 5 RB RA 1K 13K C1 100µF FB Fig. 3 Step-Down Converter with External 5V Bootstrap 200µH L1 R1 150 8 BOOST RS 0.22 VIN 8~16V C1 + 7 IS 6 VCC 100µF 5 FB DC 1 DE 2 CF 3 GND 4 CT SS6563 RA 2K2 RB 47K 680pF D1 VOUT 1N5819 + 220µF C0 28V/200mA Line Regulation Load Regulation VIN = 8V~16V @ IO=200mA VIN = 12V, @ IO=80mA~200mA Fig. 4 Step-Up Converter 100mV 40mV Rev.2.02 4/06/2004 www.SiliconStandard.com 8 of 10 SS6563 APPLICATION EXAMPLES (Continued) L D1 VOUT R1 8 BOOST RS VIN + C1 7 IS 6 VCC 5 FB DC DE CF GND 1 2 3 R2 4 CT Q1 C0 + SS6563 RA RB Fig. 5 Step-Up Converter with External NPN Switch 1 2 L1 D1 1N5819 100µH CT 560pF 3 DC DE CF BOOST IS VCC 8 7 6 5 + C1 100µF RS 0.26 VIN 4.5V~6V 4 GND FB SS6563 VOUT -12V/100mA C0 470µF 953 RB RA 8.2K + Line Regulation Load Regulation VIN = 4.5V~6V @ IO=100mA VIN = 5V, @ IO=10mA~100mA Fig. 6 Inverting Converter 20mV 100mV Rev.2.02 4/06/2004 www.SiliconStandard.com 9 of 10 SS6563 PHYSICAL DIMENSIONS 8 LEAD PLASTIC SO (unit: mm) D SYMBOL A A1 H E MIN 1.35 0.10 0.33 0.19 4.80 3.80 5.80 0.40 MAX 1.75 0.25 0.51 0.25 5.00 4.00 6.20 1.27 B C D E e A C A1 e H L L 1.27(TYP) B 8 LEAD PLASTIC DIP (unit: mm) D SYMBOL A1 E1 MIN 0.381 2.92 0.35 0.20 9.01 7.62 6.09 — 2.92 MAX — 4.96 0.56 0.36 10.16 8.26 7.12 10.92 3.81 A2 b C E D E E1 C A2 A1 L e eB 2.54 (TYP) b e eB L Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. Rev.2.02 4/06/2004 www.SiliconStandard.com 10 of 10