SS8000G

SS8000G GSM Power-Management System FEATURES Handles all GSM baseband power management Input range 2.8V to 5.5V Charger input up to 15V Seven LDOs optimized for specific GSM subsystems High operating efficiency and low stand-by current Li-Ion and NiMH battery charge function SIM card interface Three open-drain output switches to control the LED, alerter and vibrator Thermal overload protection Under-voltage lock-out protection Over-voltage protection Power-on reset and start-up timer QFN-48 package DESCRIPTION The SS8000 is a power-management system chip optimized for GSM handsets. It contains seven LDOs, one to power each of the critical GSM sub-blocks. Sophisticated controls are available for power-up during battery charging, keypad interface, and RTC alarm. The SS8000 is optimized for maximum battery life featuring a ground current of only 107µA in standby and 187µA when the phone is in operation. The SS8000 battery charger can be used with lithium ion (Li-Ion) and nickel metal hydride (NiMH) batteries. The SS8000 contains three open-drain output switches for LED, alerter and vibrator control. The SIM interface provides the level shift between SIM card and microprocessor. The SS8000 is available in a 48-pin QFN package. The operating temperature range is from -25°C to +85°C. APPLICATIONS GSM/GPRS Mobile Handsets Basic and High-end Phones This device is supplied with a Pb-free lead finish (second-level interconnect). 12/06/2004 Rev.2.10 www.SiliconStandard.com 1 of 14 SS8000G ORDERING INFORMATION SS8000GQXX Packing: TR: Tape and reel TY: Tray Package type GQ: QFN-48L, Pb-free lead finish BATUSE BATDET VIBRATOR 38 DGND ALERTER PIN CONFIGURATION VCORE VMSEL VASEL PGND VBAT LED 48 46 43 42 41 47 45 44 40 39 37 PGND CHRIN GATEDRV NC ISENSE CHRCNTL CHRDET BATSNS VSIM SIMIO SIMRST SIMCLK SIMVCC 1 2 3 4 5 6 7 8 9 10 11 12 22 13 14 17 15 16 18 19 23 24 20 21 36 35 34 33 32 LEDEN ALERTEREN VIBRATOREN PWRBB PWRKEY SRCLKEN VREF NC AGND VA AVBAT VTCXO SS8000 31 30 29 28 27 26 25 SIMSEL RSTCAP VM DGND DGND VRTC SRST SIO SCLK VBAT VIO ABSOLUTE MAXIMUM RATINGS CHRIN and GATEDRV relative to GND……………………………………………….-0.3V to 15V All other pins relative to GND………………………………………………….….……-0.3V to 7V Operating Temperature Ranges…………………………..………….……..………...-25°C to +85°C Maximum Junction Temperature……………………………………………………….+165°C Storage Temperature Range……………………………………………………….……-65°C to +165°C Thermal Impedance, θJA ……………………………………………………………………………………………………….23°C/W Lead Temperature (soldering, 10sec).……………………………………………......+260°C 12/06/2004 Rev.2.10 www.SiliconStandard.com RESET 2 of 14 SS8000G ELECTRICAL CHARACTERISTICS (Vbat = 3V-5.5V, CVa=10µF, CVcore =CVm=4.7µ F, CVrtc=0.22µF, CVref=CVtcxo=CVsim=CVio=1µF, minimum loads applied on all outputs, unless otherwise noted. Typical values are at T A=+25°C.) PARAMETER Main Controller Battery Input Voltage Range Charger Input Voltage Range Shutdown Supply Current CONDITIONS MIN 3 TYP MAX 5.5 15 UNITS V V µA Vbat