SSM03N70GH

SSM03N70GH/GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Repetitive Avalanche Rated Fast Switching Speed Simple Drive Requirement D BVDSS RDS(ON) ID 600V 3.6Ω 3.3A G S DESCRIPTION GD The TO-252 package is universally preferred for all commercialIndustrial surface mount applications and suited for AC/DC converters. The through-hole version (SSM03N70GH/GJ) is available for low-profile applications. G DS S TO-252(H) RoHS-compliant TO-251(J) ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Units V ±30 V A A 13.2 45 0.36 2 A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 85 3.3 3.3 -55 to 150 -55 to 150 THERMAL DATA Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 110 Units ℃/W ℃/W 09/06/2007 Rev.1.00 www.SiliconStandard.com 1 SSM03N70GH/GJ ELECTRICAL CHARACTERISTICS @ TJ=25oC ( unless otherwise specified ) Symbol BVDSS ∆BVDSS/∆Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 600 2 Typ. 0.6 2 11.4 3.1 4.2 8.4 6 17.7 5.9 600 45 4 Max. Units 3.6 4 10 100 ±100 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=1.6A VDS=VGS, ID=250uA VDS=10V, ID=1.6A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=3.3A VDS=480V VGS=10V VDD=300V ID=3.3A RG=10Ω,VGS=10V RD=91Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 SOURCE-DRAIN DIODE Symbol VSD trr Qrr Parameter Forward On Voltage 3 2 Test Conditions IS=3A, VGS=0V IS=3A, VGS=0V, dI/dt=100A/µs Min. - Typ. 422 2580 Max. Units 1.5 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25 C , VDD=50V , L=15mH , RG=25Ω , IAS=3A. 3.Pulse width