SSM09N90CGW

SSM09N90CGW N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM09N90CGW acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for h igh voltage applications such as A C/DC converters and offline power supplies. The SSM09N90CGW is in a TO-247 (TO-3P) package, which is widely used for commercial and industrial applications, where the greater pin spacing is needed to meet safety specifications. The through-hole package is suitable for vertical mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. 900V 1.4Ω 7.6A Pb-free; RoHS-compliant TO-247 G D S TO-247 (suffix W) ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD EAS IAS Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C TC = 100°C Pulsed drain current 1 Value 900 ±30 7.6 4.8 25 208 1.6 3 Units V V A A A W W/°C mJ A Total power dissipation, TC = 25°C Linear derating factor Single pulse avalanche energy Avalanche current 120 6 TSTG TJ Storage temperature range Operating junction temperature range -55 to 150 -55 to 150 °C °C THERMAL CHARACTERISTICS Symbol RΘ JC RΘ JA Parameter Maximum thermal resistance, junction-case Maximum thermal resistance, junction-ambient Value 0.6 40 Units °C/W °C/W Notes: 1. Pulse width must be limited to avoid exceeding the safe operating area. 2. Pulse width