SSM1333GU

SSM1333GU P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM1333GU acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as drivers, high-side line and general load-switching circuits. The SSM1333GU is supplied in an RoHS-compliant SOT-323/SC-70 package, which is widely used for low power commercial and industrial surface mount applications. -20V 600mΩ -550mA Pb-free; RoHS-compliant SOT-323/SC-70 D S SOT-323/SC-70 G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current 1,2 3 3 , Value -20 ± 12 T A = 25°C TA = 70°C -550 -440 -2.5 0.35 0.003 -55 to 150 -55 to 150 Units V V mA mA A W W/°C °C °C Total power dissipation , TA = 25°C Linear derating factor Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol RΘJA Parameter Maximum thermal resistance, junction-ambient 3 Value 360 Units °C/W Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width