SSM20G45EGJ

SSM20G45EGH/J N-channel Insulated-Gate Bipolar Transistor PRODUCT SUMMARY V CES V CE(sat) I CP DESCRIPTION The SSM20G45E acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for u se in short-duration, high-current strobe applications, such as still-camera flash. The SSM20G45EGH is in a TO-252 package, which is widely used for commercial and industrial surface-mount applications. The through-hole version, the SSM20G45EGJ in TO-251, is available for vertical mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. The gate has internal ESD protection. 450V 5V typ. 130A Pb-free; RoHS-compliant TO-251 (IPAK) and TO-252 (DPAK) G GD S D S TO-251 (suffix J) TO-252 (suffix H) ABSOLUTE MAXIMUM RATINGS Symbol VCES VGE V GEP ICP PD Parameter Collector-emitter voltage Gate-emitter voltage Pulsed gate-emitter voltage Pulsed collector current1 Total power dissipation, TC = 25°C Value 450 ±6 ±8 130 20 Units V V V A W TSTG TJ Storage temperature range Operating junction temperature range -55 to 150 -55 to 150 °C °C THERMAL CHARACTERISTICS Symbol RΘ JC Parameter Maximum thermal resistance, junction-case Value 6 Units °C/W Notes: 1.Pulse width must be limited to avoid exceeding the safe operating area. 2.Pulse width