SSM2301N

SSM2301N P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Small package outline Surface-mount device S D BV DSS R DS(ON) ID -20V 130mΩ -2.3A Description SOT-23 G D Power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-23 package is widely preferred for commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating - 20 ± 12 -2.3 -1.5 -10 1.25 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 100 Unit °C/W Rev.2.02 3/11/2004 www.SiliconStandard.com 1 of 6 SSM2301N Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS ∆ BV DSS/∆T j Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. Typ. Max. Units -20 -0.5 -0.1 - V V/°C Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-5V, ID=-2.8A VGS=-2.8V, ID=-2.0A 4.4 5.2 1.36 0.6 25 60 70 60 295 170 65 130 190 -1 -10 - mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-2.8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= ± 8V ID=-2.8A VDS=-6V VGS=-5V VDS=-6V ID=-1A RG=6Ω ,VGS=-5V RD=6Ω VGS=0V VDS=-6V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 ±100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=-1.2V 1 Min. Typ. Max. Units -1.6 -10 -1.2 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25°C, IS=-1.6A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width