SSM2304AGN

SSM2304AGN N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Lower gate charge Fast switching characteristics D BV DSS R DS(ON) S 30V 117mΩ 2.5A ID SOT-23-3 G Description Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM2304AGN is in the SOT-23-3 package, which is widely preferred for lower power commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters and switches. D G S RoHS compliant. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ± 20 2.5 2 10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit °C/W 3/21/2005 Rev.2.01 www.SiliconStandard.com 1 of 5 SSM2304AGN Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.1 2 3 0.8 1.8 5 9 11 2 120 62 24 1.67 Max. Units 117 190 3 1 10 ±100 5 190 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω ∆ BV DSS/∆ Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA VGS=10V, ID=2.5A VGS=4.5V, ID=2A VDS=VGS, ID=250uA VDS=10V, ID=2.5A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS=±20V ID=2.5A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3Ω , VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1.2A, VGS=0V IS=2A, VGS=0V, dI/dt=100A/µs Min. - Typ. 24 23 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse width