SSM2304N

SSM2304N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Small package outline Surface-mount package S D BV DSS R DS(ON) I D 25V 117mΩ 2.5A Description SOT-23 G Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 3 Rating 25 ±20 2.5 2 10 1.25 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 100 Unit °C/W Rev.2.02 3/11/2004 www.SiliconStandard.com 1 of 6 SSM2304N Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS ∆ BV DSS/ ∆Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 25 1 - Typ. 0.1 Max. Units 117 190 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25°C,ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.5A VGS=4.5V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 C) o o VDS=VGS, ID=250uA VDS=4.5V, ID=2.5A VDS=25V, VGS=0V VDS=25V ,VGS=0V VGS=20V ID=2.5A VDS=15V VGS=10V VDS=15V ID=1A RG=6Ω ,VGS=10V RD=15Ω VGS=0V VDS=15V f=1.0MHz 3.4 5.9 0.8 2.1 4.5 11.5 12 3 110 85 39 3 1 10 ±100 10 - Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V 1 Min. - Typ. - Max. Units 1.25 10 1.2 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 IS=1.25A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width