SSM2306N

SSM2306N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate-drive Lower on-resistance Surface-mount package S D BVDSS RDS(ON) ID 20V 32mΩ 5.3A Description SOT-23 G Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device. The SOT-23 package is widely used for commercial and industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 3 Rating 20 ± 12 5.3 4.3 10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit °C/W Rev.2.02 3/16/2004 www.SiliconStandard.com 1 of 4 SSM2306N Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS ∆BV DSS/∆ Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.1 13 8.7 1.5 3.6 6 14 18.4 2.8 575 120 92.3 Max. Units 27 32 50 1 10 ±100 V V/°C mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.5A VGS=4.5V, ID=5.3A VGS=2.5V, ID=2.6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=55 C) o VDS=VGS, ID=250uA VDS=5V, ID=5.3A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS= ± 12V ID=5.3A VDS=10V VGS=4.5V VDS=15V ID=1A RG=2Ω ,VGS=10V RD=15Ω VGS=0V VDS=10V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=1.2A, VGS=0V IS=5A, VGS=0V, dI/dt=100A/µs Min. - Typ. 16.8 11 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width