SSM2307N

SSM2307N P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple drive requirement Small package outline Surface-mount device S D BV DSS R DS(ON) ID -16V 60mΩ - 4A Description SOT-23 G D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-23 package is widely preferred for commercial and industrial surface mount applications and is well suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -16 ±8 -4 -3.3 -12 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit °C/W Rev.1.01 4/06/2004 www.SiliconStandard.com 1 of 4 SSM2307N Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min. -16 - Typ. -0.01 12 15 1.3 4 8 11 54 36 985 180 160 Max. Units 60 70 90 -1.0 -1 -25 ±100 24 1580 V V/°C mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA Static Drain-Source On-Resistance VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-3.0A VGS=-1.8V, ID=-2.0A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-4A VDS=-16V, VGS=0V VDS=-12V, VGS=0V VGS=±8V ID=-4A VDS=-12V VGS=-4.5V VDS=-10V ID=-1A RG=3.3Ω ,VGS=-10V RD=10Ω VGS=0V VDS=-15V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-1.2A, VGS=0V IS=-4A, VGS=0V, dI/dt=100A/µs Min. - Typ. 39 26 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width