SSM2312GN

SSM2312GN N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant. D BV DSS R DS(ON) ID 20V 50mΩ 4.3A G S DESCRIPTION The SSM2312GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is suitable for low-voltage applications such as DC/DC converters and and general switching applications. D S SOT-23-3 G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating 20 ± 12 4.3 3.4 10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol RΘJA Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit °C/W 4/16/2005 Rev.2.1 www.SiliconStandard.com 1 of 5 SSM2312GN ELECTRICAL CHARACTERISTICS (at Tj = 25°C unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 Typ. 0.02 16 5 1 2.3 8 9 11 2 360 75 60 1.5 Max. Units 36 50 75 1.2 1 10 ±100 8 580 V V/°C mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω ∆ BV DSS/∆Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance VGS=10V, ID=5A VGS=4.5V, ID=4A VGS=2.5V, ID=3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=5V, ID=4A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS=±12V ID=4A VDS=16V VGS=4.5V VDS=15V ID=1A RG=3.3Ω , VGS=5V RD=15Ω VGS=0V VDS=20V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=1.2A, VGS=0V IS=4A, VGS=0V, dI/dt=100A/µs Min. - Typ. 16 8 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width