SSM2316GN

SSM2316GN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM2316GN acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM2316GN is supplied in an RoHS-compliant SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. 30V 42mΩ 4.7A Pb-free; RoHS-compliant SOT-23-3 D S SOT-23-3 G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current 1,2 3 3 , Value 30 ± 20 T A = 25°C TA = 70°C 4.7 3.7 10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total power dissipation , TA = 25°C Linear derating factor Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol RΘJA Parameter Maximum thermal resistance, junction-ambient 3 Value 90 Units °C/W Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width