SSM2602GY

SSM2602GY N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Capable of 2.5V gate drive Lower on-resistance Surface mount package RoHS Compliant S D D G D D BVDSS RDS(ON) ID 20V 34mΩ 6.3A SOT-26 DESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial–industrial applications. D G S Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 3 Rating 20 ±12 6.3 5 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W 11/16/2007 Rev.1.00 www.SiliconStandard.com 1 SSM2602GY ELECTRICAL CHARACTERISTICS (TJ=25 C unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5.5A VGS=4.5V, ID=5.3A VGS=2.5V, ID=2.6A Min. 20 0.5 - Typ. 0.1 13 8.7 1.5 3.6 6 14 18.4 2.8 603 144 111 Max. Units 30 34 50 1 10 ±100 16 1085 V V/℃ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=55oC) VDS=VGS, ID=250uA VDS=5V, ID=5.3A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS= ± 12V ID=5.3A VDS=10V VGS=4.5V VDS=15V ID=1A RG=2Ω,VGS=10V RD=15Ω VGS=0V VDS=15V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 SOURCE-DRAIN DIODE Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1.2A, VGS=0V IS=5A, VGS=0V, dI/dt=100A/µs Min. - Typ. 16.8 11 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width