SSM2605GY

SSM2605GY P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Fast Switching Characteristic Lower Gate Charge Small Footprint & Low Profile Package S D D G D D BVDSS RDS(ON) ID -30V 80mΩ - 4A SOT-26 DESCRIPTION Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and ost-effectiveness device. The SOT-26 package is universally used for all commercial- industrial applications. D G S Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ±20 -4 -3.3 -20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W 11/16/2007 Rev.1.00 www.SiliconStandard.com 1 SSM2605GY ELECTRICAL CHARACTERISTICS (TJ=25 C unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -30 -1 - Typ. -0.02 6 5.5 1 2.6 7 6 18 4 400 90 30 Max. Units 80 120 -3 -1 -25 ±100 8.8 640 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-4A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= ±20V ID=-4A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3Ω,VGS=-10V RD=15Ω VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 SOURCE-DRAIN DIODE Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-1.6A, VGS=0V IS=-4A, VGS=0V, dI/dt=100A/µs Min. - Typ. 21 14 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width