SSM4228M

SSM4228M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance High Vgs rating Surface-mount package D1 D1 D2 D2 BV DSS R DS(ON) G2 S2 30V 25mΩ 6.8A ID SO-8 S1 G1 Description D1 D2 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 G2 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM4228GM. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,4 3 3 Rating 30 ± 25 6.8 5.5 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A A W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Max. Value 62.5 Unit °C/W 4/26/2004 Rev.2.10 www.SiliconStandard.com 1 of 6 SSM4228M/GM Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS ∆ BV DSS/∆ Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.03 15 22 15 17.5 4.7 8.5 10.6 12.4 26.2 12 1535 310 200 Max. Units 25 35 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance VGS=10V, ID=6A VGS=4.5V, ID=4A VDS=VGS, ID=250uA VDS=10V, ID=6A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= ± 25V ID=6A VDS=20V VGS=5V VDS=20V ID=2A RG=3.3Ω ,VGS=10V RD=10Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 1.7 30 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25°C,IS=1.7A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width