SSM4410M

SSM4410M N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low on-resistance Fast switching Simple drive requirement D D D D BV ID DSS 30V 13.5mΩ 10A R DS(ON) G S SO-8 S S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial and industrial surface mount applications and well suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating 30 ± 20 10 8 50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 50 Unit °C/W Rev.2.02 12/29/2003 www.SiliconStandard.com 1 of 6 SSM4410M Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS ∆ BV DSS/∆ Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.037 Max. Units 13.5 22 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A VGS=4.5V, ID=5A 20 16.6 2.7 10.6 9.6 12.4 25.4 33 745 510 210 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55oC) o VDS=VGS, ID=250uA VDS=15V, ID=10A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= ± 20V ID=10A VDS=15V VGS=5V VDS=25V ID=1A RG=3.3Ω , VGS=5V RD=25Ω VGS=0V VDS=15V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 2.3 50 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25°C, IS=2.3A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width