SSM4501GM

SSM4501GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Simple Drive Requirement Low On-resistance Fast Switching D2 D2 D1 D1 G2 S2 N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID 30V 28mΩ 7A -30V 50mΩ -5.3A SO-8 S1 G1 DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. D1 D2 Pb-free; RoHS-compliant G1 S1 G2 S2 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 7 5.8 20 2 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -5.3 -4.7 -20 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W 08/17/2007 Rev.1.00 www.SiliconStandard.com 1 SSM4501GM N-CH ELECTRICAL CHARACTERISTICS @Tj=25 C (unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 30 1 0.02 28 42 3 1 25 - V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7A VGS=4.5V, ID=5A 13 8.4 2.1 4.7 6 5.2 18.8 4.4 645 150 95 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=10V, ID=7A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=7A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3Ω,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 ±100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 SOURCE-DRAIN DIODE Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V Tj=25℃, IS=7A, VGS=0V Min. Typ. Max. Units 1.7 1.2 A V Forward On Voltage 2 08/17/2007 Rev.1.00 www.SiliconStandard.com 2 SSM4501GM P-CH ELECTRICAL CHARACTERISTICS @Tj=25 C (unless otherwise specified) o Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. Typ. Max. Units -30 -1 -0.03 50 90 -3 -1 -25 - V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A VDS=VGS, ID=-250uA VDS=-10V, ID=-5.3A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= ± 20V ID=-5.3A VDS=-15V VGS=-10V VDS=-15V ID=-1A RG=6Ω,VGS=-10V RD=15Ω VGS=0V VDS=-15V f=1.0MHz 8.5 20 3.5 2 12 20 45 27 790 440 120 Gate-Source Leakage Total Gate Charge 2 ±100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 SOURCE-DRAIN DIODE Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=-1.2V Tj=25℃, IS=-2.6A, VGS=0V Min. Typ. Max. Units -1.7 A -1.2 V Forward On Voltage2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width