SSM4532M

SSM4532M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 N-ch D2 D1 D1 G2 S2 BV ID DSS +30V 50mΩ +5A -30V 70mΩ -4A Low on-resistance Fast switching R DS(ON) P-ch BV DSS RDS(ON) ID SO-8 S1 G1 Description MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is widely preferred for commercial and industrial surface mount applications and is well suited for low-voltage applications such as DC/DC converters. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS I D @ TA=25°C I D @ TA=70°C I DM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltag Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,4 3 3 Rating N-channel +30 ±20 +5 +4 +20 2.0 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -4 -3.2 -20 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 62.5 Unit °C/W Rev.2.01 7/01/2004 www.SiliconStandard.com 1 of 11 SSM4532M N-channel Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.037 Max. Units 50 70 3 1 25 ±100 20 12 18 30 12 360 210 80 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance VGS=10V, ID=5A VGS=4.5V, ID=4.2A 8 10.2 1.2 3.4 6 9 15 5.5 240 145 55 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55oC) o VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=5A VDS=10V VGS=10V VDS=10V ID=1A RG=6Ω,VGS=10V RD=10Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V 1 Min. - Typ. 0.8 Max. Units 1.7 20 1.2 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25°C, IS=1.7A, VGS=0V Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse width