SSM4800M

SSM4800M N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance Fast Switching Simple Drive Requirement G D D D D BV DSS R DS(ON) ID S 25V 18mΩ 9A SO-8 S S Description DD Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G G The SSM4800M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low-voltage applications such as DC/DC converters. SS Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 25 ± 20 9 7 40 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 50 Unit ℃/W Rev.2.01 6/26/2003 www.SiliconStandard.com 1 of 6 SSM4800M Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 25 1 - Typ. 0.037 Max. Units 18 33 3 1 25 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance VGS=10V, ID=9A VGS=4.5V, ID=7A VDS=VGS, ID=250uA VDS=15V, ID=10A 20 - Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=55 C) o o VDS=25V, VGS=0V VDS=20V, VGS=0V VGS= ± 20V ID=9A VDS=15V VGS=5V VDS=15V ID=1A RG=6.2Ω,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 ±100 10.9 1.9 7.4 7 10.5 20 17.5 390 245 100 - Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 2.3 40 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25℃, IS=2.3A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width