SSM4816SM

SSM4816SM DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE Simple drive requirement Suitable for DC-DC Converters Fast switching performance S1/D2 S1/D2 S1/D2 D1 G2 S2/A S2/A G1 MOSFET-1 BV DSS 30V 22mΩ 6.7A 30V 13mΩ 11.5A R DS(ON) ID MOSFET-2 BV DSS R DS(ON) ID D1 SO-8 Description Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G1 The SO-8 package is widely preferred for commercial and industrial surface mount applications and is well suited for low voltage applications such as DC/DC converters. N-channel MOSFET 1 S1/D2 G2 N-channel MOSFET 2 Schottky Diode Absolute Maximum Ratings Symbol VDS VGS I D @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 S2/A Rating MOSFET-1 30 ±20 6.7 5.3 30 1.4 0.01 -55 to 150 -55 to 150 MOSFET-2 30 ±20 11.5 9.2 40 2.4 0.02 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a (MOSFET-1) Rthj-a (MOSFET-2) Rthj-a (Schottky) Parameter Typ. Thermal Resistance Junction-ambient Thermal Resistance Junction-ambient Thermal Resistance Junction-ambient 3 3 3 Value Max. 90 53 60 70 42 52 Units °C/W °C/W °C/W Rev.1.01 4/16/2004 www.SiliconStandard.com 1 of 9 SSM4816SM MOSFET-1 Electrical Characteristics @ Tj=25 C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 o Min. 30 1 - Typ. 0.03 10 11 3 7 9 7 22 7 780 180 50 1.25 Max. Units 22 30 3 1 25 ±100 18 1250 V V/ °C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω ∆ BV DSS/∆ Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance VGS=10V, ID=6A VGS=4.5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=6A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=6A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3Ω , VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1.2A, VGS=0V IS=6A, VGS=0V dI/dt=100A/µs Min. - Typ. 21 15 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Rev.1.01 4/16/2004 www.SiliconStandard.com 2 of 9 SSM4816SM MOSFET-2 Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS ∆ BV DSS/∆ Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o Test Conditions VGS=0V, ID=250uA 2 Min. 30 1 - Typ. 0.03 15 20 5 12 12 8 31 12 320 230 1.5 Max. Units 13 18.5 3 100 1 ±100 30 V V/°C mΩ mΩ V S uA mA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25°C,ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=10V, ID=11A VGS=4.5V, ID=8A VDS=VGS, ID=250uA VDS=10V, ID=11A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=8A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3Ω , VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1450 2320 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1A, VGS=0V IS=8A, VGS=0V dI/dt=100A/µs Min. - Typ. 27 18 Max. Units 0.5 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width