SSM4835M

SSM4835M P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple drive requirement Low on-resistance Fast switching G D D D D BV DSS R DS(ON) ID S -30V 20mΩ -8A SO-8 S S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating -30 ±25 -8 -6 -50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 50 Unit ℃/W Rev.2.01 6/26/2003 www.SiliconStandard.com 1 of 6 SSM4835M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. Typ. Max. Units -30 -1 -0.037 20 35 -3 -1 -25 ±100 - V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-8A VGS=-4.5V, ID=-5A 20 36 5.5 3.5 12 8 75 40 1530 900 280 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=-250uA VDS=-15V, ID=-8A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=±25 ID=-4.6A VDS=-15V VGS=-10V VDS=-15V ID=-1A RG=6Ω,VGS=-10V RD=15Ω VGS=0V VDS=-15V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=-1.2V Tj=25℃, IS=-2.1A, VGS=0V Min. Typ. Max. Units -2.1 -50 A A V Pulsed Source Current ( Body Diode ) 1 Forward On Voltage 2 -0.75 -1.2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width