SSM4957M

SSM4957(G)M DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics D1 D2 D1 D2 BV DSS R DS(ON) ID G2 S2 -30V 24mΩ -7.7A SO-8 G1 S1 Description Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM4957M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low-voltage applications. G1 D1 D2 G2 S1 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM4957GM. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ± 20 -7.7 -6.1 -30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit °C/W 10/21/2004 Rev.1.01 www.SiliconStandard.com 1 of 5 SSM4957(G)M Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -30 -1 - Typ. -0.02 12 27 5 18 14 11 38 25 530 435 Max. Units 24 36 -3 -1 -25 ±100 45 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA Static Drain-Source On-Resistance VGS=-10V, ID=-7A VGS=-4.5V, ID=-5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-7A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=±20V ID=-7A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3Ω , VGS=-10V RD=15Ω VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1670 2670 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=-1.7A, VGS=0V IS=-7A, VGS=0V, dI/dt=100A/µs Min. - Typ. 35 34 Max. Units -1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse width