SSM60T03GH,J
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
DESCRIPTION
The SSM60T03 acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM60T03GH is in a TO-252 package, which is widely used for commercial and industrial surface-mount applications. The through-hole version, the SSM60T03GJ in TO-251, is available for vertical mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. The devices have a maximum junction temperature rating of 175°C for improved thermal margin and reliability.
30V 12mΩ 45A
Pb-free; RoHS-compliant TO-251 (IPAK) and TO-252 (DPAK)
G
GD S D S
TO-251 (suffix J)
TO-252 (suffix H)
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID IDM PD EAS TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C TC = 100°C Pulsed drain current
1
Value 30 ±20 45 32 120 44 0.352
3
Units V V A A A W W/°C mJ °C °C
Total power dissipation, TC = 25°C Linear derating factor Single pulse avalanche energy Storage temperature range Operating junction temperature range
29 -55 to 175 -55 to 175
THERMAL CHARACTERISTICS
Symbol
RΘ JC RΘ JA
Parameter
Maximum thermal resistance, junction-case Maximum thermal resistance, junction-ambient
Value
3.4 110
Units
°C/W °C/W
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area. 2.Pulse width
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