SSM60T03GP

SSM60T03GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free, RoHS compliant. D BV DSS R DS(ON) ID 30V 12mΩ 45A G S DESCRIPTION The SSM60T03GS is in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. This device is suitable for low-voltage applications such as DC/DC converters. The through-hole version, the SSM60T03GP in TO-220, is available for vertical-mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, permitting operation up to a maximum junction temperature of 175°C. G DS TO-263 (S) G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 D TO-220(P) S Units V V A A A W W/°C Rating 30 ±20 45 32 120 44 0.352 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 175 -55 to 175 °C °C THERMAL DATA Symbol RΘJC RΘJA Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance Junction-ambient Value 3.4 62 Units °C/W °C/W 9/16/2005 Rev.3.1 www.SiliconStandard.com 1 of 5 SSM60T03GP,S ELECTRICAL CHARACTERISTICS (at Tj=25°C, unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.03 25 11.6 3.9 7 8.8 57.5 18.5 6.4 200 135 Max. Units 12 25 3 1 250 ±100 19 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=20A VGS=4.5V, ID=15A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance 2 o VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= ±20V ID=20A VDS=24V VGS=4.5V VDS=15V ID=20A RG=3.3Ω , VGS=10V RD=0.75Ω VGS=0V VDS=25V f=1.0MHz o Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=175 C) Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1135 1816 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/µs Min. - Typ. 23.3 16 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width