SSM7002DGU

SSM7002DGU Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM7002DG acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM7002DGU is supplied in a RoHS-compliant SOT-363 package, which is widely used where board space is critical and a small footprint is required. 50V 3Ω 250mA Pb-free; RoHS-compliant SOT-363 G1 S1 D2 D1 SOT-363 S2 G2 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current 1,2 3 3 , Value 50 ± 20 T A = 25°C 250 Units V V mA ISD IDM PD TSTG TJ Source-drain diode current Total power dissipation , TA = 25°C TA = 75°C Storage temperature range Operating junction temperature range 115 1.0 200 120 -55 to 150 -55 to 150 mA A mW mW °C °C THERMAL CHARACTERISTICS Symbol RΘJA Parameter Maximum thermal resistance, junction-ambient 3 Value 625 Units °C/W Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width