SSM85T08GP

SSM85T08GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Simple Drive Requirement Low On-resistance Fast Switching Characteristic D BVDSS RDS(ON) ID 80V 13mΩ 75A G S DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (SSM85T08GP) are available for low-profile applications. GD S TO-263(S) Pb-free; RoHS-compliant G D S TO-220(P) ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 80 ±20 75 48 260 138 1.11 3 Units V V A A A W W/℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 450 30 -55 to 150 -55 to 150 THERMAL DATA Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.9 62 Units ℃/W ℃/W 08/06/2007 Rev.1.00 www.SiliconStandard.com 1 SSM85T08GP ELECTRICAL CHARACTERISTICS @TJ=25 C (unless otherwise specified ) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA 2 Min. 80 1 Min. - Typ. 0.09 70 63 23 38 30 100 144 173 6300 670 350 1.1 Typ. 47 86 Max. 13 18 3 10 100 ±100 100 10080 1.7 Max. 1.3 - Units V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Units V ns nC Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=45A VGS=4.5V, ID=25A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Symbol VSD trr Qrr Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25oC) Drain-Source Leakage Current (T j=150oC) VDS=VGS, ID=250uA VDS=10V, ID=45A VDS=80V, VGS=0V VDS=64V ,VGS=0V VGS= ±20V ID=45A VDS=64V VGS=4.5V VDS=40V ID=45A RG=10Ω,VGS=10V RD=0.89Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V dI/dt=100A/µs Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Parameter Forward On Voltage 2 2 2 Source-Drain Diode Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width