SSM9410M

SSM9410M N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Low on-resistance Fast switching D D D G D BVDSS RDS(ON) ID SS S 30V 6mΩ 18A SO-8 Description Advanced power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial and industrial surface-mount applications and is well suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ± 12 18 15 80 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit °C/W Rev.2.02 4/06/2004 www.SiliconStandard.com 1 of 4 SSM9410M Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=10V, ID=18A VGS=4.5V, ID=12A VGS=2.5V, ID=6A Min. 30 1 - Typ. 0.01 47 59 10 23 16 12 96 30 660 400 Max. Units 5 6 8 3 1 25 ±100 95 V V/°C mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=12A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= ± 12V ID=18A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3Ω ,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 5080 8100 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=18A, VGS=0V IS=18A, VGS=0V, dI/dt=100A/µs Min. - Typ. 43 39 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width