SSM9475M

SSM9475M N-channel Enhancement-mode Power MOSFET D Simple drive requirement Lower gate charge Fast switching characteristics G S BVDSS R DS(ON) ID 60V 40mΩ 6.9A DESCRIPTION D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM9475M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. D D D G SO-8 S S S ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 60 ± 25 6.9 5.5 30 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit °C/W 3/21/2005 Rev.2.01 www.SiliconStandard.com 1 of 5 SSM9475M ELECTRICAL CHARACTERISTICS @ Tj = 25 C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=1mA Min. 60 1 Typ. 0.073 10 19 5 10 11 6 35 10 160 116 1.58 Max. Units 40 50 3 1 25 ±100 30 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω o ∆ BV DSS/∆ Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA VGS=10V, ID=6A VGS=4.5V, ID=4A VDS=VGS, ID=250uA VDS=10V, ID=6A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=60V, VGS=0V VDS=48V, VGS=0V VGS=±25V ID=6A VDS=48V VGS=4.5V VDS=30V ID=1A RG=3.3Ω ,VGS=10V RD=30Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1670 2670 SOURCE-DRAIN DIODE Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=2A, VGS=0V IS=6A, VGS=0V, dI/dt=100A/µs Min. - Typ. 34 50 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse width